TW201237968A - Production method for semiconductor device - Google Patents

Production method for semiconductor device Download PDF

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Publication number
TW201237968A
TW201237968A TW100143597A TW100143597A TW201237968A TW 201237968 A TW201237968 A TW 201237968A TW 100143597 A TW100143597 A TW 100143597A TW 100143597 A TW100143597 A TW 100143597A TW 201237968 A TW201237968 A TW 201237968A
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor device
protective film
manufacturing
region
Prior art date
Application number
TW100143597A
Other languages
English (en)
Chinese (zh)
Inventor
Takeyoshi Masuda
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW201237968A publication Critical patent/TW201237968A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
TW100143597A 2011-03-09 2011-11-28 Production method for semiconductor device TW201237968A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011050928A JP5659882B2 (ja) 2011-03-09 2011-03-09 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW201237968A true TW201237968A (en) 2012-09-16

Family

ID=46795959

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100143597A TW201237968A (en) 2011-03-09 2011-11-28 Production method for semiconductor device

Country Status (7)

Country Link
US (1) US8524585B2 (OSRAM)
EP (1) EP2685488A4 (OSRAM)
JP (1) JP5659882B2 (OSRAM)
KR (1) KR20140031846A (OSRAM)
CN (1) CN103548118A (OSRAM)
TW (1) TW201237968A (OSRAM)
WO (1) WO2012120731A1 (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104143503A (zh) * 2013-05-07 2014-11-12 上海凯世通半导体有限公司 掺杂方法
JP6376729B2 (ja) * 2013-05-21 2018-08-22 ローム株式会社 半導体装置の製造方法
CN105161416A (zh) * 2015-09-24 2015-12-16 株洲南车时代电气股份有限公司 一种半导体结构的掺杂方法
JP6314965B2 (ja) * 2015-12-11 2018-04-25 トヨタ自動車株式会社 半導体装置の製造方法
JP6853621B2 (ja) * 2016-03-17 2021-03-31 国立大学法人大阪大学 炭化珪素半導体装置の製造方法
KR102427555B1 (ko) * 2017-01-17 2022-08-01 젯트에프 프리드리히스하펜 아게 규소 탄화물 상에 절연 층을 제조하는 방법
CN110391317B (zh) * 2019-07-29 2021-03-09 通威太阳能（成都）有限公司 一种单晶硅片的绒面制备方法
JP7697313B2 (ja) * 2021-08-17 2025-06-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411907A (en) * 1992-09-01 1995-05-02 Taiwan Semiconductor Manufacturing Company Capping free metal silicide integrated process
JPH0786199A (ja) 1993-09-16 1995-03-31 Fuji Electric Co Ltd 炭化けい素半導体装置の製造方法
CN1269196C (zh) * 1994-06-15 2006-08-09 精工爱普生株式会社 薄膜半导体器件的制造方法
JP3580052B2 (ja) * 1996-10-17 2004-10-20 株式会社デンソー 炭化珪素半導体装置の製造方法
US5952679A (en) 1996-10-17 1999-09-14 Denso Corporation Semiconductor substrate and method for straightening warp of semiconductor substrate
JP3760688B2 (ja) * 1999-08-26 2006-03-29 富士電機ホールディングス株式会社 炭化けい素半導体素子の製造方法
JP4961633B2 (ja) * 2001-04-18 2012-06-27 株式会社デンソー 炭化珪素半導体装置の製造方法
JP4134575B2 (ja) * 2002-02-28 2008-08-20 松下電器産業株式会社 半導体装置およびその製造方法
US7572741B2 (en) * 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
JP5509520B2 (ja) * 2006-12-21 2014-06-04 富士電機株式会社 炭化珪素半導体装置の製造方法
US7820534B2 (en) * 2007-08-10 2010-10-26 Mitsubishi Electric Corporation Method of manufacturing silicon carbide semiconductor device
JP5266996B2 (ja) * 2008-09-12 2013-08-21 住友電気工業株式会社 半導体装置の製造方法および半導体装置
JP2010262952A (ja) * 2009-04-29 2010-11-18 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
KR20140031846A (ko) 2014-03-13
EP2685488A1 (en) 2014-01-15
EP2685488A4 (en) 2014-10-22
US8524585B2 (en) 2013-09-03
CN103548118A (zh) 2014-01-29
WO2012120731A1 (ja) 2012-09-13
JP5659882B2 (ja) 2015-01-28
JP2012190865A (ja) 2012-10-04
US20120231617A1 (en) 2012-09-13

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