TW201205771A - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- TW201205771A TW201205771A TW100122157A TW100122157A TW201205771A TW 201205771 A TW201205771 A TW 201205771A TW 100122157 A TW100122157 A TW 100122157A TW 100122157 A TW100122157 A TW 100122157A TW 201205771 A TW201205771 A TW 201205771A
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Description
201205771 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種發光二極體。 【先前技術】 本發明之相關技術可參閱文件W0 2006/012842,其係 描述一種發光模組。 當將發光二極體用於機動車輛前照燈中時,在操作期 間要讓由發光二極體產生的熱消散通常是困難的問題。 設法解決的一個問題在於提供一種特別適用於例如機 動車輛前照燈中的發光二極體。 【發明内容】 根據發光二極體的至少一實施例,發光二極體包含載 體。載體係為例如平板的形式。也就是說,載體的橫向延 伸程度係大於其厚度。載體具有安裝面,其提供用於發光 二極體之固定元件。 根據發光二極體的至少一實施例,發光二極體包含至 少二個發光二極體晶片。發光二極體較佳地包含大量的發 光二極體晶片,例如四或多個發光二極體晶片。發光二極 體的發光二極體晶片係提供在操作期間,產生頻帶為紅外 線輻射至紫外線輻射之電磁輻射。發光二極體晶片在此例 子中表示發光二極體的光源。較佳地,發光二極體本身發 射白光。 根據發光二極體的至少一實施例,至少二個發光二極 體晶片(較佳地為發光二極體的所有發光二極體晶片)係至 3 95252 201205771 ==該縣:面固定至該載體上。至少間接的意思表系 如中;光一極體晶片與安裴面之間有另-材料,例 如中間载體或例如黏著劑或鋅料的連接裝置。 辦」艮光二極體的至少一實施例,载體具有金屬基本 一乂 ^益屬基本體接著形成载體之主要部分 。例如, ^屬^體佔據倾至少9Q%的體積及重量。金屬基本體 、、良好I傳導性以及熱傳導性的金屬形成,例如銅。 4 ”體包含外部表面,其包含載體的安裝面。也 體之金屬基本體之外部表面的至少-些點形成 _ ^π +而至夕一個發光二極體晶片係至少間接地於該安 裝面固定於載體。 根據發光一極體的至少一實施例,二個二 地為發光二極體的所有發光二極體晶片)係以 並聯的方式彼此電性連接。 :據發光二極體的至少—實施例,發光二極體包含具 面以及至少二個發光二極體晶片的載體,發光二極 載體包含金屬基本體ϊΐί岐至載體。在此例子中, 面。發光二極體的至少錢之絲面的外部表 以並聯的方式彼此連接發光二極體晶片於此例子中係 構相::礎匕:::外’此處所述之發光二極體係以下列 此二ϋ凰装士x光一極體的發光二極體晶片設置成盡可 二ίί 能使在操作發光二極體期間,由發光 -玉日日>i產生特別有效的散熱 。換句話說,發光二極體 95252 4 201205771 晶片所產生的熱係在熱產生之後能盡快地分佈於金屬基本 體的整個體積上,而金屬基本體係形成載體的主要部分。 根據發光二極體的至少一實施例,發光二極體於載體 中包含至少一開口。在此例子中的開口自載體上侧延伸至 載體下側,下侧係面向遠離上側。例如,開口自載體頂面 延伸至載體底面。開口較佳地完全通過載體。開口可為載 體中例如鑽孔的形式,或者開口已於載體製造期間提供。 開口具有内表面,載體材料在該内表面鄰接開口。在此例 子中,内表面係被電性絕緣材料覆蓋。例如,開口的整個 内表面係以電性絕緣材料塗佈,結果是載體材料之開口内 沒有點是暴露的。 例如,開口係用以容納用來安裝發光二極體之固定裝 置。例如,固定裝置可為用以壓合(press f i t)的螺絲或者 定位銷。 用以覆蓋開口之内表面之電性絕緣材料係為例如電性 絕緣塑膠或者藉由例如二氧化矽或氮化矽之電性絕緣材料 形成的層。此外,電性絕緣材料可為陶莞。電性絕緣材料 可含有氮化硼或由例如氮化硼所組成。電性絕緣材料可以 層的形式完全地覆蓋開口之側面。電性絕緣材料可以例如 介於至少30//m且至多100//m的厚度鋪設。 發光二極體可包含複數個開口於載體中,例如二或多 個開口。每一開口係以所述方式組構而成,且用以容納用 以安裝發光二極體於欲使用位置的固定裝置。 根據至少一實施例,開口完全地通過金屬基本體。也 5 95252 201205771 就疋忒,至少一開口係形成於金屬基本體區域的載體中 至少於金屬基本體區域中,開口的内表面接著較佳地以。 性絕緣材料完全覆蓋。換句話說,金屬基本體在開口 何一點並未被暴露出來,並可因此在發光二極體之操壬 間以簡化方式維持無電位的狀態。 ^ 根據發光二極體的至少一實施例,载體的安農面係μ 置於載體上側,且發光二極體晶片係直接於安褒面固二至 載體。例如’發光二極體晶片在此例子中係於安裳面_ i 接至載體。換句話說,除了例如銲料的連接裝置以外,^ 光二極體晶片係直接鋪設於載體的金屬基本體,並直接^ 其接觸。接著,電性絕緣層係在載體下側固定至載體,亦 即’在載體中面向遠離安裝面的一侧上。電性絕緣層較佳 地直接與金屬基本體接觸。電性絕緣層較佳地係於載體τ 側完全覆蓋,除了開口以外。換句話說,金屬基本體接著 亦藉由電性絕緣層完全地覆蓋於金屬基本體中面向遠離安 裝面的一側上。 電性絕緣層在此例子中具有至少2 W /( m k )的熱傳導性。 換句話說,在此具體實施例中’發光二極體晶片係直 接安裝於金屬基本體上’其能使發光二極體晶片與载體具 有最佳的熱耦合。載體的整個金屬基本體作為散熱元件。 在此例子中,發光二極體晶片可電性導電連接至金屬基本 體,且經由金屬基本體以並聯的方式彼此連接。金屬基本 體的電性絕緣係以電性絕緣層形成於面向遠離安裝面的一 侧上,其特徵係在於特別高的熱傳導性。此種設計的發光 95252 6 201205771 二極體能使發熱源(亦即,發光二極體晶片)提早直接散 熱,以及因此讓整個發光二極體有特別低的熱阻抗。 根據發光二極體之至少一實施例,電性絕緣層係為陶 曼層。這表示電性絕緣層具有陶究特性。電性絕緣層可包 括陶莞材料或由陶莞材料組成。電性絕緣層在此例子中具 有至少2W/(mk)的熱傳導性。 根據發光二極體之至少一實施例,電性絕緣層具有至 少3 0 // m且至多10 0 /z m的厚度。例如,電性絕緣層具有介 於至少50#111且至多70#111之間的厚度。 根據發光二極體之至少一實施例,電性絕緣層含有氮 化硼或由氮化硼所組成。在此例子中,電性絕緣層可具有 至少30/zm且至多ΙΟΟ/zm、例如介於至少50/zm且至多 70//Π1之間的厚度。電性絕緣層在此例子中具有至少2W/ (mk)的熱傳導性。 根據發光二極體之至少一實施例,發光二極體晶片係 電性導電連接至金屬基本體,且經由金屬基本體以並聯的 方式彼此連接。也就是說,發光二極體晶片係具有相同於 發光二極體晶片中面向金屬基本體的一侧上的金屬基本體 的電位。 根據發光二極體之至少一實施例,開口完全通過載體 下側上的電性絕緣層。換句話說,電性絕緣層亦被開口中 斷。在此例子中,開口可於電性絕緣層鋪設於金屬基本體 之前或之後產生。開口中電性絕緣層的側面較佳地係被電 性絕緣材料覆蓋,且内表面亦於金屬基本體之區域中以電 7 95252 201205771 性絕緣材料覆蓋。例如,為此目的,一旦電性絕緣層被鋪 設於載體下側時,開口之内表面係僅以電性絕緣材料塗 佈。在此例子中,亦有可能讓載體下側上之電性絕緣層以 相同材料(亦即電性絕緣材料)形成。 根據發光二極體之至少一實施例,供發光二極體晶片 固定的中間載體係設置於發光二極體晶片與安裝面之間。 中間載體可包含陶瓷材料或由陶瓷材料組成。換句話說, 中間載體表示發光二極體晶片與載體的電性絕緣,特別是 與金屬基本體的電性絕緣。在此例子中,亦能免除載體下 側的電性絕緣層。 根據發光二極體之至少一實施例,載體包含另一電性 絕緣層,其係固定至金屬基本體中面向發光二極體晶片的 一側上。供發光二極體晶片電性導電連接的電性導電層係 接著設置於該另一電性絕緣層中面向遠離金屬基本體的一 側上。電性導電層可於此例子中建構以形成導體執跡,其 產生發光二極體之發光二極體晶片之間的接觸。 根據發光二極體之至少一實施例,開口完全地通過另 一電性絕緣層以及電性導電層。在此例子中,開口中之另 一電性絕緣層以及電性導電層的側面係被電性絕緣材料覆 蓋。換句話說,在此具體實施例中,較佳地,開口之整個 内表面係被電性絕緣材料覆蓋。除了金屬基本體之外,另 一電性絕緣層以及電性導電層亦被電性絕緣材料覆蓋,且 因而與開口中的固定裝置電性絕緣。 根據發光二極體之至少一實施例,發光二極體的至少 8 95252 201205771 二個發光二極體晶片係埋入於反射塗層中。較佳地,發光 二極體的所有發光二極體晶片係埋入於反射塗層中。 「埋入」的意思於此處表示反射塗層覆蓋發光二極體 晶片的至少一些點,且與發光二極體晶片於覆蓋位置直接 接觸。例如,能夠讓反射塗層與發光二極體晶片中面向遠 離載體的輻射離開表面齊平。橫向於安裝面之發光二極體 晶片的那些側面接著完全地被例如反射塗層覆蓋。 此外,能讓反射塗層覆蓋發光二極體晶片中面向遠離 安裝面的的輻射離開表面。然後,反射塗層於該處具有微 小厚度,使得發光二極體晶片在操作期間產生的光可穿過 反射塗層通至外部。於發光二極體晶片的輻射離開表面 上,反射塗層接著作為擴散層,其擴散通過擴散層的光線。 除了發光二極體晶片以外,反射塗層較佳地亦覆蓋至 少部分安裝面。例如,安裝面係被反射塗層材料完全地覆 蓋於完全暴露的點,亦即,特別是無發光二極體晶片之處。 特別是,亦能讓整個載體在其面向發光二極體晶片之表面 被反射塗層覆蓋。換句話說,載體在此表面的所有暴露區 域係接著被反射塗層覆蓋。 在此例子中,當以例如日光照射時,對於觀察者而言, 係能讓反射塗層以白色呈現。換句話說,當發光二極體藉 由反射塗層以適當方式覆蓋時,亦即,例如,當面向發光 二極體晶片之表面上載體的所有暴露表面係藉由反射塗層 覆蓋時,發光二極體本身可呈現白色。 在此例子中,反射塗層係以例如擴散的方式反射。反 9 95252 201205771 射塗層可藉域質材卿成。基料財含有例㈣,或 者由石夕組成。此外,基質材料係有可能為 石夕混合物(亦即,所謂㈣環氧化物混合材料),=射粒子 可被導入反射塗層之基質材料中。反射 ^ ^ ^ T汉耵极子係藉由例如下 列材料之-城,转反子可由下叫: 肌、BaS04、Zn〇、Alx〇y、Zr〇i。特別良,以z咖形成 的輻射反射粒子係特別適用於反射藍光或紫外光。 特別是,係能讓基質材料中的反射塗層含有由上述不 同材料所形成之不同反射粒子的混合物。以此方式,反射 塗層的反射頻譜可特別符合發光二極體的需求。 此處所述之發光一極體將以下列具體實施例及相關圖· 式詳細說明。 [實施方式】 相同、相似或功能相同之元件係於圖式中設為相同元 件符號。圖式以及圖式中所示元件之尺寸關係與另一者不 應被視為實際尺寸。相反地,為求增進表述及/或清楚理 解,個別元件可以誇大尺寸說明。 第1圖顯示此處所述之發光二極體之第一具體實施例 之示意剖面圖。發光二極體包含載體1。载體1包含金屬 基本體12,金屬基本體12形成载體之主要部分。在此例 子中,金屬基本體12佔據載體至少95%的體積及重量。 金屬基本體係以例如銅形成,亦即,金屬基本體包含銅或 由銅組成。 再者,載體1包含另外的電性絕緣層13,其係舖設於 10 95252 201205771 載體之上側la之金屬基本體12的外部表面121的點上。 於此例子中,另外的電性絕緣層13可與金屬基本體12直 接接觸。電性導電層14(其係建構以形成例如導線軌跡 (conductor track))係舖設於另外的電性絕緣層13中面向 运離金屬基本體12的—側上。 載體1具有開^ ώ ^ _ 下侧lb完全地其自载體1之上側la到載體1之 性絕緣層13、體,亦即’通過金屬基本體12、電 及電性導電層14。 於此例中,每— 4完全地覆蓋。也、之内表面31係被電性絕緣材料 體12的竊、另/1是說’電性絕緣材料4覆蓋金屬基本 層之側面H1。電㈣緣層之勤131以及電性導電 每一開口係用、 置8在此例子中絲X容_定1置8,紗襲。固定裝 之固定裝置8)。、饫供用以安裝發光二極體(可參見第3圖 斤示之具體實施例中,發光極體晶片 以例如銲接的方汰认i ^位股日曰係 基本體12。發亦一巧體1之安震面11處直接鋪設至金屬 此連接,並且X在發^體晶片2於此例子中係以並聯方式彼 側上具有與金屬基以極體晶片中面向金屬基本體12之一 一 土本體12相同的電位。 體晶片2係電性導電連接至電性導電層14, ' 丄^ 4係建構成藉由銲線21形成導體軌跡。此處 係有可i讓其中〜條銲線21直接電性導電連接至金屬基 本體12。例如,欲, 、光二極體包含四個發光二極體晶片,其 11 95252 201205771 係提供用以在操作期間產生藍光及/或uv輻射。發光轉換 材料係接著順著設置於每一發光二極體晶片2或一起設置 於所有發光二極體晶片2,發光轉換材料以全程白光係藉 由發光二極體發射的方式,在操作期間轉換藉由發光二極 體晶片2產生的至少某些電磁輻射。 第1圖所示具體實施例中,蓋體7(其機械連接固定至 載體1)係順著設置於所有發光二極體晶片2。蓋體7可以 是由例如玻璃組成的蓋體。此外,係有可能讓蓋體7含有 陶究發光轉換材料的粒子或者讓蓋體7由喊發光轉換材 料組成。 在載體1中面向遠離發光二極體晶片2之下側,電性 絕緣層5較佳地係直接鋪設於金屬基本體2上,該電性絕 緣層將載體1予以電性絕緣。電性絕緣層的側面可被完 全地通過電性絕緣層5之開口 3的區域中的電性絕緣材= 4所覆蓋。在此例子中,也有可能以相同材_成電性絕 緣材料4以及電性絕緣層5。 ' 關於第2圖,此處所述之發光二極體之第二具體每施 例將參考示意剖面圖而更詳細解釋。相較於八 ^ ^ ^ 、弟1圖所示之 具體實施例,在此具體實施例令,係經由電 Λ _ , Λ 等電層14而 ”發光二極體晶片2產生接觸,電性導電層14係建
成導體軌跡。為此目的,電性導電層14係與發光二極體I 片2的連接點(未圖不)直接接觸.。在第2圖戶斤_ , 施例中,為此S的,另外的電性絕緣層13係於= = : = = 覆蓋發光二極體之某些發光二極體晶片的側面^性導^ 95252 12 201205771 層14係沿著這些發光二極體晶片2之側面上的電性絕緣層 13通到發光二極體晶片2的電性連接點。 關於第3圖,此處所述之發光二極體之第三具體實施 例係參考示意剖面圖而詳細解釋。在此具體實施例中,相 較於第1圖,並無電性絕緣層5。發光二極體晶片2係經 由電性絕緣中間載體6而與載體1的金屬基本體12電性絕 緣,電性絕緣中間載體6係設置於金屬基本體12與發光二 極體晶片2之間。中間載體6係由例如陶瓷材料組成。於 中間載體6中面向遠離金屬基本體12的一側上,可建構金 屬導體執跡,發光二極體晶片2係經由金屬導體執跡而平 行連接於中間載體6上。第3圖中所示的發光二極體的特 徵係在於簡化第1圖及第2圖所示具體實施例的製造程 序,因為不需鋪設電性絕緣層5。相較於第1圖及第2圖 所說明的具體實施例,其優點係在於沒有熱直接自發光二 極體晶片2散發至金屬基本體12内,而是藉由中間載體6 降低熱傳導率。 在所有具體實施例中,係能夠提供或免除蓋體7。蓋 體7可形成發光二極體晶片2的機械保護,並且進一步展 現例如輕射轉換及/或輻射擴散的光學特性。 此處所述之發光二極體之另一具體實施例係參考第4 圖所示之示意剖面圖說明。相較於先前具體實施例,此例 中的發光二極體包含埋入發光二極體晶片2之反射塗層 151。在此例子中的反射塗層151完全地覆蓋載體1的安裝 面11。在第4圖所示之具體實施例中,發光二極體晶片2 13 95252 201205771 從反射塗層151突出其面向遠離載體1的表面,這些表面 代表發光二極體晶片2的輻射離開表面。例如,反射塗層 151與這些表面齊平。在此例子中,反射塗層係以例如矽 的基質材料形成,例如,以被導入至該基質材料中的輻射 反射粒子形成,例如,由二氧化鈦組成。 於此例中,反射塗層151可使用於此處所述之發光二 極體的所有具體實施例。例如,在第3圖所示之具體實施 例中,反射塗層151亦可完全地覆蓋中間載體6之暴露的 外部表面。 本發明並不受限於具體實施例所述内容。相反地,本 發明包含任何新穎特徵且同時包含任何結合之特徵,其 中,特別是包括申請專利範圍中任何結合的特徵,即使特 徵或結合的特徵本身並未明確地指定於專利申請範圍或具 體實施例中。 【圖式簡單說明】 第1、2、3及4圖顯示此處使用示意剖示圖所描述之 發光二極體的具體實施例。 【主要元件符號說明】 1 載體 la 截體上側 lb 載體下側 2 發光二極體晶片 3 開口 4 電性絕緣材料 14 95252 201205771 5 電性絕緣層 6 中間載體 7 蓋體 8 固定裝置 11 安裝面 12 •金屬基本體 13 另一電性絕緣層 14 電性導電層 21 銲線 31 開口内表面 51 電性絕緣層之側面 121 金屬基本體之外部表面 131 另一電性絕緣層之侧面 141 電性導電層之側面 151 反射塗層 S- 15 95252
Claims (1)
- 201205771 七、申請專利範圍: 1. 一種發光二極體,包含: 載體(1),係具有安裝面(11),以及 至少二個發光二極體晶片(2),係至少於該安裝面 (11)間接固定至該載體(1)上; 該載體(1)包含金屬基本體(12); 該金屬基本體(12)之外部表面(121)包含該安裝面 (11);以及 該至少二個發光二極體晶片(2 )係以彼此並聯的方 式連接。 2·如申請專利範圍第1項所述之發光二極體,其中: 該安裝面(11)係設置於該載體(1)的上側(la); 該發光二極體晶片(2)係直接於該安裝面處(11)固 定至該載體(1);以及 電性絕緣層(5)係在該載體(1)之下侧(lb)固定至 該載體(1); 該電性絕緣層(5)具有至少2W/(mk)的熱傳導率。 3·如申請專利範圍第1項或第2項所述之發光二極體,包 含: 至少一個開口(3),係位於該載體(1)中,該開口自 5亥载體(1)之上側(la)延伸至該載體(i)之下側(lb),且 —-.. 該下侧面向遠離該上側(la); 該至少一個開口(3)完全通過該載體(1); 該至少一個開口(3)的内表面(31)係被電性絕緣材 95252 1 201205771 料(4 )覆蓋,以及 以容納安裝該發光二 3亥至少一個開口(3)係提供用 極體之固定裝置(8)。 4·如申請專利範圍第3項所述之發光二極體,其中,該至 少一個開口(3)完全通過該金屬基本體(12)。 5. 如申請專利範圍第4項所述之發光二極體,其中: "亥至少一個開口(3)完全.通過該電性絕緣層(5);以 及 该至少一個開口(3)中之該電性絕緣層(5)之侧面 (51)係被該電性絕緣材料(4)覆蓋。 6. 如申請專利範圍第丨項至第5項中任一項所述之發光二 極體,其中,該發光二極體晶片(2)係電性導電連接至 該金屬基本體(12),且經由該金屬基本體(12)以並聯的 方式彼此連接。 7 •如申請專利範圍第1項至第6項中任一項所述之發光二 極體’其中’供該發光二極體晶片(2)固定的中間載體 (6)係設置於該發光二極體晶片(2)以及該安裝面(11) 之間。 *如申請專利範圍第7項所述之發光二極體,其中,該中 9間载體(6)係由陶瓷材料組成。 •如申請專利範圍第1項至第8項中任一項所述之發、光二 槐體,其中,該載體(1)包含另外的電性絕緣層(13), δ亥電性絕緣層(丨3)係固定至該金屬基本體(12)中面向 5亥發光二極體晶片(2)的一側上;以及 2 95252 201205771 該載體(1)包含電性導電層(14),該電性導電層(14) 係固定至該另外的電性絕緣層(13)中面向遠離該θ金屬 基本體(12)的一侧上; 該發光二極體晶片(2)係電性導電連接至該電性導 電層(14)。 10.如申請專利範圍第9項所述之發光二極體,其中, 該至少一個開口(3)完全通過該另外的電性絕緣層 (13)以及該電性導電層(14),以及 該至少一個開口(3)中之該另外的電性絕緣層(13) 之側面(131)以及該至少一個開口(3)中之該電性導電 層(14 )之侧面(141)係被該電性絕緣材料(4 )覆蓋。 11·如申請專利範圍第1項至第1〇項中任一項所述之發光 二極體,其中: 該電性絕緣層(5)係陶瓷層;以及 該電性絕緣層(5)係具有至少30/zm和至多1〇〇 的厚度。 12·如申請專利範圍第11項所述之發光二極體,其中,該 電性絕緣層(5)係由陶瓷材料組成。 13·如申請專利範圍第1項至第12項中任一項所述之發光 二極體’其中,該電性絕緣層(5)包括氮化硼或由氮化 侧所組成。 14.如申請專利範圍第1項至第a項中任一項所述之發光 二極體,其中: 該至少二個發光二極體晶片(2)係埋入於反射塗層 3 95252 201205771 (151)中; 該反射塗層(151)覆蓋該安裝面(11)以及該發光二 極體晶片(2)之側面。 15.如申請專利範圍第14項所述之發光二極體,其中,該 反射塗層(151)於日光下顯示為白色。 4 95252
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-
2010
- 2010-07-07 DE DE102010026344A patent/DE102010026344A1/de not_active Withdrawn
-
2011
- 2011-05-24 JP JP2013517126A patent/JP5955318B2/ja active Active
- 2011-05-24 EP EP11726076.0A patent/EP2591502B1/de active Active
- 2011-05-24 US US13/808,300 patent/US8890306B2/en active Active
- 2011-05-24 WO PCT/EP2011/058494 patent/WO2012004049A1/de active Application Filing
- 2011-05-24 KR KR1020137003132A patent/KR101783755B1/ko active IP Right Grant
- 2011-05-24 CN CN201180033633.7A patent/CN103026488B/zh active Active
- 2011-06-24 TW TW100122157A patent/TWI525789B/zh active
-
2014
- 2014-10-16 US US14/515,802 patent/US9431378B2/en active Active
Also Published As
Publication number | Publication date |
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US20150041834A1 (en) | 2015-02-12 |
WO2012004049A1 (de) | 2012-01-12 |
TWI525789B (zh) | 2016-03-11 |
CN103026488A (zh) | 2013-04-03 |
KR20130119908A (ko) | 2013-11-01 |
JP2013530541A (ja) | 2013-07-25 |
CN103026488B (zh) | 2016-07-06 |
US20130207133A1 (en) | 2013-08-15 |
KR101783755B1 (ko) | 2017-10-10 |
US9431378B2 (en) | 2016-08-30 |
JP5955318B2 (ja) | 2016-07-20 |
DE102010026344A1 (de) | 2012-01-12 |
EP2591502B1 (de) | 2017-10-11 |
EP2591502A1 (de) | 2013-05-15 |
US8890306B2 (en) | 2014-11-18 |
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