CN103026488A - 发光二极管 - Google Patents
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Abstract
本发明提出一种发光二极管,包括:具有安装面(11)的支架(1),和至少两个发光二极管芯片(2),这些发光二极管芯片(2)至少间接地固定在支架(1)上的安装面(11)上,其中,支架(1)包括金属基体(12),金属基体(12)的外表面(121)包括安装面(11),并且所述至少两个发光二极管芯片(2)相互并联。
Description
技术领域
本发明提出了一种发光二极管。
背景技术
文献WO 2006/012842描述了一种发光模块。
在汽车大灯中采用发光二极管时,由发光二极管在工作中所生成的热量的散出常常是成问题的。
本发明要解决的技术问题在于:提出一种例如特别良好地适合于应用在汽车大灯中的发光二极管。
根据发光二极管的至少一种实施形式,发光二极管包括一个支架。例如按照板的方式来构成支架。亦即:支架的横向长度与其厚度相比是大的。支架具有设置用于接纳发光二极管的元件的安装面。
根据发光二极管的至少一种实施形式,发光二极管包括至少两个发光二极管芯片。发光二极管优选包括多个发光二极管芯片,例如四个或更多的发光二极管芯片。将发光二极管的发光二极管芯片规定用于,在工作中生成在从红外辐射至UV辐射的频段中的电磁辐射。发光二极管芯片此时是发光二极管的光源。发光二极管本身优选辐射白色光。
根据发光二极管的至少一种实施形式,至少两个发光二极管芯片,优选发光二极管的所有的发光二极管芯片,至少间接地固定在支架上的安装面上。至少间接地亦即其它的材料,诸如中间支架或连接剂(例如粘合剂或钎焊料)可以位于发光二极管芯片和安装面之间。
根据发光二极管的至少一种实施形式,支架具有一个金属基体。于是金属基体优选形成支架的主要组成部分。例如金属基体占支架的至少90%的体积和至少90%的重量。例如用良好导电流的和导热的金属(诸如铜)来形成金属基体。
金属基体包括一个包括支架的安装面的外表面。亦即:至少支架的金属基体的外表面的位置形成了安装面,在该安装面上,至少两个发光二极管芯片是至少间接地固定在支架上的。
根据发光二极管的至少一种实施形式,至少两个发光二极管芯片,优选发光二极管的所有的发光二极管芯片在电气上相互并联。
根据发光二极管的至少一种实施形式,发光二极管包括一个具有安装面的支架,和至少两个发光二极管芯片,这些发光二极管芯片至少间接地固定在支架上的安装面上。支架此时包括一个具有外表面的金属基体,该外表面包括支架的安装面。发光二极管的至少两个发光二极管芯片此时相互并联。
这里所描述的发光二极管此时还基于以下构思:发光二极管的发光二极管芯片的尽可能靠近金属基体的布置,允许特别有效地热扩张由发光二极管芯片在发光二极管工作中所生成的热量。亦即:由发光二极管芯片所生成的热量,在其生成之后尽可能快地,经过形成支架主要组成部分的金属基体的整个体积分散。
根据发光二极管的至少一种实施形式,发光二极管包括至少一个在支架中的开口。开口此时从支架的上侧面向支架的背向上侧面的下侧面延伸。开口例如从支架的顶板面向支架的底板面延伸。开口此时优选完全贯穿支架。开口例如可以实施为支架中的钻孔,或已经在制造支架时设置了开口。开口具有一个在其中支架的材料与开口相毗邻的内表面。此时用电绝缘的材料覆盖内表面。例如用电绝缘的材料来对开口的整个内表面进行涂层,使得在开口之内无处显露出支架的材料。
开口例如用来接纳为了安装发光二极管的固定装置。例如在固定装置中可以涉及螺钉或用于压配合的配合销。
在用其覆盖开口的内表面的电绝缘材料中,例如涉及一种电绝缘的塑料,或涉及一种用像二氧化硅或氮化硅那样的电绝缘材料所形成的层。电绝缘的材料还可以是陶瓷的。电绝缘的材料例如可以含有氮化硼,或由氮化硼制成。电绝缘的材料可以作为层来完全覆盖开口的一个侧面或各侧面。例如可以用在至少30 μm和最高100 μm之间的厚度来涂敷电绝缘的材料。
发光二极管在支架中可以包括多个开口,例如两个或更多的开口。于是以所描述的方式来设计开口中的每一个的形状,并且用来接纳为了将发光二极管安装在预先规定的使用场合上的固定装置。
根据至少一种实施形式,开口完全贯穿金属基体。亦即:至少一个开口构成在支架中的金属基体的范围中。于是至少在金属基体的范围中,优选用电绝缘的材料完全覆盖了开口的内表面。亦即:金属基体没有在开口任何位置上显露出来,可以因此在发光二极管的工作中以简单的方式免受电势影响。
根据发光二极管的至少一种实施形式,将支架的安装面布置在支架的上侧面上,并且发光二极管芯片直接固定在支架上的安装面上。例如发光二极管芯片在此情况下在安装面上是钎焊到支架上的。换言之,发光二极管芯片直接安放到支架的金属基体上,并且不考虑诸如钎焊料的粘合剂,是与该金属基体处于直接的接触中。于是支架上的电绝缘层固定在支架的下侧面上,亦即在支架的背向安装面的侧面上。电绝缘层优选与金属基体处于直接的接触中。电绝缘层在支架的下侧面上(不考虑开口)优选完全覆盖了支架。亦即:金属基体在其背向安装面的侧面上,于是也完全由电绝缘层所覆盖。
此时电绝缘层具有至少2 W/(mK)的热导率。
换言之,在该实施例中,发光二极管芯片直接安装到金属基体上,这允许发光二极管芯片最佳地热耦合到支架上。支架的整个的金属基体用作为用于热扩展的元件。发光二极管芯片在此情况下可以与金属基体导电连接,并且经过金属基体相互并联。在背向安装面的侧面上,借助其特点在于特别高的热导率的电绝缘层来实现金属基体的电绝缘。发光二极管的该构造实现了直接在热源上的,也就是在发光二极管芯片上的及早的热扩张,并且因此实现了整个发光二极管的特别低的热阻抗。
根据发光二极管的至少一种实施形式,电绝缘层是一种陶瓷的层。亦即:电绝缘层具有陶瓷的特性。于是电绝缘层可以含有陶瓷材料或由陶瓷材料制成。此时电绝缘层具有至少2 W/(mK)的热导率。
根据发光二极管的至少一种实施形式,电绝缘层具有至少30 μm和最高100 μm的厚度。例如电绝缘层具有在至少50 μm和最高70 μm之间的厚度。
根据发光二极管的至少一种实施形式,电绝缘层含有氮化硼或由氮化硼制成。此时电绝缘层可以具有至少30 μm和最高100 μm的,例如在至少50 μm和最高70 μm之间的厚度。此时电绝缘层具有至少2 W/(mK)的热导率。
根据发光二极管的至少一种实施形式,发光二极管芯片与金属基体导电连接,并且经过金属基体相互并联。亦即:发光二极管芯片于是在其朝向金属基体的侧面上,位于像金属基体的同一个电位上。
根据发光二极管的至少一种实施形式,开口完全贯穿在支架的下侧面上的电绝缘层。亦即:电绝缘层也由开口穿透。此时可以在电绝缘层安放到金属基体上之前或之后,生成开口。优选用电绝缘的材料覆盖开口中的电绝缘层的侧面,用该电绝缘的材料覆盖了也在金属基体的范围中的内表面。为此,例如在支架的下侧面上安放了电绝缘层之后,才用电绝缘的材料涂敷开口的内表面。此时也可以用相同的材料,亦即用电绝缘的材料来形成在支架的下侧面上的电绝缘层。
根据发光二极管的至少一种实施形式,在发光二极管芯片和安装面之间,布置了一个在其上固定了发光二极管芯片的中间支架。中间支架可以包括陶瓷的材料或由陶瓷的材料制成。亦即:于是中间支架是发光二极管芯片对于支架的和因此尤其是对于金属基体的电绝缘。在此情况下,在支架的下侧面上的电绝缘层也可以取消。
根据发光二极管的至少一种实施形式,支架包括另一电绝缘层,该另一电绝缘层固定在金属基体上的朝向发光二极管芯片的侧面上。在另一电绝缘层的背向金属基体的侧面上,于是布置了发光二极管芯片导电地连接到其上的导电层。此时导电层可以结构化为接点接通发光二极管的发光二极管芯片的印制导线。
根据发光二极管的至少一种实施形式,开口在完全贯穿另一电绝缘层和导电层。此时用电绝缘的材料来覆盖开口中的另一电绝缘层的和导电层的侧面。亦即:在该实施例中,由电绝缘的材料优选覆盖开口的整个内表面。不考虑金属基体,也由电绝缘的材料覆盖另一电绝缘层和导电层,并且因此朝向开口中的固定装置进行电绝缘。
根据发光二极管的至少一种实施形式,将发光二极管的至少两个发光二极管芯片埋入反射包封(Umhüllung)中。优选将发光二极管的所有的发光二极管芯片埋入反射包封中。
“埋入”在此意味着,反射包封至少部分地覆盖了发光二极管芯片,并且在覆盖的地方与发光二极管芯片处于直接的接触中。例如反射包封可以与发光二极管芯片的背向支架的辐射输出面齐平地终了(abschließt)。于是例如可以由反射包封完全覆盖发光二极管芯片的垂直于安装面分布的侧面。
除此之外,反射包封也可以覆盖发光二极管芯片的背向安装面的辐射输出面。反射包封于是在那里具有如此微小的厚度,以至于在工作中,在发光二极管芯片中所生成的光可以通过反射包封向外射出。反射包封在发光二极管芯片的辐射输出面上,于是作为将穿透的光进行散射的散射光层来起作用。
反射包封优选除了发光二极管芯片之外也至少覆盖了安装面的部分。例如在显露出的位置上,也就是尤其是在没有布置发光二极管芯片的地方,完全用反射包封的材料完整地覆盖了安装面。尤其是也可以由反射包封覆盖了在其朝向发光二极管芯片的表面上的整个支架。亦即:于是由反射包封覆盖了在该表面上的支架的所有显露出的范围。
此时尤其可能的是,通过例如用日光的照明,反射包封对于观察者显现为白色。亦即:在用反射包封合适地覆盖时,如果因此例如用反射包封覆盖了朝向发光二极管芯片的表面上的支架的所有显露出的面,发光二极管本身则可以显现为白色。
此时例如漫射反射地形成反射包封。可以用基质材料来形成反射包封。基质材料例如可以含有硅树脂或由硅树脂制成。在基质材料中还可以涉及由硅树脂与环氧树脂制成的混合物,也就是涉及所谓的硅树脂-环氧树脂混合材料。可将反射的颗粒放入反射包封的基质材料中。例如用以下材料之一来形成反射的颗粒,亦即:它们可以由以下材料之一制成:TiO2,BaSO4,ZnO,AlxOy,ZrO2。尤其是用ZrO2所形成的反射辐射的颗粒,特别良好地适用于反射蓝色光或紫外光。
尤其是在基质材料中的反射包封,也可以含有用不同的所述材料形成的不同的反射颗粒的混合物。以此方式可将反射包封的反射谱,特别良好地与发光二极管的要求相匹配。
附图说明
以下借助实施例和所属的附图来详细阐述这里所描述的发光二极管。
附图1、2、3和4借助示意的剖视图展示了这里所描述的发光二极管的实施例。
相同的,相同类型的或相同作用的元件在附图中配备了同样的附图标记。附图中所示出元件的附图和尺寸比例在相互之间不应看作为按尺寸比例的。更确切地说,为了更好的可示出性和/或为了更好的理解,夸张地示出了各个元件。
具体实施方式
附图1展示了这里所描述的发光二极管的第一实施例的示意的剖视图。发光二极管包括一个支架1。支架1包括一个形成支架的主要组成部分的金属基体12。金属基体12占支架的至少95%的体积和重量。金属基体例如用铜形成,亦即:它含有铜或它由铜制成。
支架1还包括另一电绝缘层13,该另一电绝缘层13部分地安放到了支架上侧面1a上的金属基体12的外表面121上。另一电绝缘层13此时可以与金属基体12处于直接的接触中。在另一电绝缘层13的背向金属基体12的侧面上,例如安放了结构化为印制导线的导电层14。
支架1具有开口3,这些开口3从支架1的上侧面1a到支架1的下侧面1b,完全贯穿了支架,亦即贯穿了金属基体12、另一电绝缘层13和导电层14。
每一个开口3的内表面31,当前完全由电绝缘的材料4所覆盖。亦即:电绝缘的材料4覆盖了金属基体12的侧面、另一电绝缘层的侧面131和导电层的侧面141。
每一个开口用来接纳例如螺钉的固定装置8。固定装置8此时设置用于安装发光二极管(请参阅固定装置8和附图3)。
在附图1的实施例中,在支架1的安装面11上的发光二极管芯片2直接安放在,例如钎焊在金属基体12上。发光二极管芯片2此时相互并联,并且在其朝向金属基体12的侧面上,位于像金属基体12那样的同一个电位上。
发光二极管芯片2借助焊丝(Bonddrähte)21,与结构化为印制导线的导电层14导电连接。此时可将焊丝21之一直接与金属基体12导电连接。发光二极管例如包括四个在工作中设置用于生成蓝色光和/或UV辐射的发光二极管芯片。于是在每一个发光二极管芯片2或所有的发光二极管芯片2之后,共同布置了一种荧光转换材料,该荧光转换材料将由发光二极管芯片2在工作中所生成的电磁辐射的至少一部分如此进行转换,使得总共由发光二极管辐射出白色光。
在附图1的实施例中,在所有的发光二极管芯片2之后布置了机械式固定地与支架1相连接的覆盖物7。在覆盖物7中可以例如涉及一种由玻璃制成的覆盖物。覆盖物7还可以含有陶瓷的荧光转换材料的颗粒,或由陶瓷的荧光转换材料所制成。
在支架1的背向发光二极管芯片2的下侧面上,优选将在电气上使支架1绝缘了的电绝缘层5,直接安放到金属基体12上。电绝缘层的侧面51可以在完全贯穿电绝缘层5的开口3的范围中,用电绝缘的材料4来覆盖。此时也可以用相同的材料来形成电绝缘的材料4和电绝缘层5。
结合附图2,借助示意的剖视图来详细阐述这里所描述的发光二极管的第二实施例。不同于附图1的实施例,在该实施例中,经过结构化为印制导线的导电层14发生了发光二极管芯片2的接点接通。导电层14为此与发光二极管芯片2的没有展示的连接点是在直接的接触中的。在附图2的实施例中,另一电绝缘层13为此至少部分地覆盖了发光二极管的某些发光二极管芯片的侧面。将导电层14沿着电绝缘层13,在该发光二极管芯片2的侧面上引向发光二极管芯片2的电连接点。
结合附图3,借助示意的剖视图来详细阐述这里所描述的发光二极管的第三实施例。在该实施例中,不同于附图1,舍弃了电绝缘层5。发光二极管芯片2经过布置在金属基体12和发光二极管芯片2之间的电绝缘的中间支架6,在电气上与支架1的金属基体12绝缘。中间支架6例如由陶瓷的材料制成。在中间支架6的背向金属基体12的侧面上,结构化了经过其并联了在中间支架6上的发光二极管芯片2的金属印制导线。根据附图3的发光二极管的特点在于根据附图1和2的实施例所简化的制造,因为可以舍弃安放电绝缘层5。不利之处在于:不同于在结合附图1和2所阐述的实施例中,没有发生发光二极管芯片2的进入金属基体12中的直接的热扩张,而是由于中间支架6而使热导率降低。
在所有的实施例中可以存在或取消覆盖物7。覆盖物7可以形成发光二极管芯片2的机械式保护,并且除此之外,可以承担像辐射转换和/或辐射散射的光学特性。
借助附图4的示意的剖视图,阐述了这里所描述的发光二极管的一个其它的实施例。不同于上述的实施例,发光二极管当前包括一个将发光二极管芯片2埋入其中的反射包封151。反射包封151此时完全覆盖了支架1的安装面11。在附图4的实施例中,发光二极管芯片2以其背向支架1的,表现为发光二极管芯片2的辐射输出面的表面,从反射包封151中探出。反射包封151例如与这些表面齐平地终了。此时例如用像硅树脂那样的基质材料形成了反射包封,将由例如二氧化钛制的反射辐射的颗粒放入该基质材料中。
反射包封151此时可以在这里所描述的发光二极管的所有的实施例中得到采用。例如在附图3的实施例中,反射包封151于是也会完全覆盖中间支架6的显露出的外表面。
本发明并不局限于借助实施例的描述的这些实施例。更确切地说:本发明包括任何新的特征以及特征的任何组合,这尤其是包含在权利要求中的特征的任何组合,即使该特征或该组合本身在权利要求或实施例中不曾明显地说明。
本专利申请要求德国专利申请102010026344.3的优先权,以此通过引用而接纳了该专利申请102010026344.3的公开内容。
Claims (15)
1.一种发光二极管,包括:
– 具有安装面(11)的支架(1),和
– 至少两个发光二极管芯片(2),这些发光二极管芯片(2)至少间接地固定在支架(1)上的安装面(11)上,其中,
–支架(1)包括金属基体(12),
–金属基体(12)的外表面(121)包括安装面(11),和
– 至少两个发光二极管芯片(2)相互并联。
2.按照上一权利要求所述的发光二极管,在该发光二极管中,
- 安装面(11)布置在支架(1)的上侧面(1a)上,
- 发光二极管芯片(2)直接固定在支架(1)上的安装面(11)上,和
- 在支架(1)的下侧面(1b)上固定了在支架(1)上的电绝缘层(5),其中,
- 电绝缘层(5)具有至少2 W/(mK)的热导率。
3.按照以上权利要求之一所述的发光二极管,包括:
- 至少一个在支架(1)中的开口(3),该开口(3)从支架(1)的上侧面(1a)向支架(1)的背向上侧面(1a)的下侧面(1b)延伸,其中,
- 至少一个开口(3)完全贯穿支架(1),
- 用电绝缘材料(4)覆盖至少一个开口(3)的内表面(31),和
- 设置至少一个开口(3)用于接纳用来安装发光二极管的固定装置(8)。
4.按照上一权利要求所述的发光二极管,在该发光二极管中,至少一个开口(3)完全贯穿金属基体(12)。
5.按照上一权利要求所述的发光二极管,在该发光二极管中,
- 至少一个开口(3)完全贯穿电绝缘层(5),和
- 用电绝缘的材料(4)覆盖在至少一个开口(3)中的电绝缘层(5)的一个侧面(51)。
6.按照以上权利要求之一所述的发光二极管,在该发光二极管中,发光二极管芯片(2)与金属基体(12)导电连接,并且经过金属基体(12)相互并联。
7.按照以上权利要求之一所述的发光二极管,在该发光二极管中,在发光二极管芯片(2)和安装面(11)之间,布置了在其上固定了发光二极管芯片(2)的中间支架(6)。
8.按照上一权利要求所述的发光二极管,在该发光二极管中,中间支架(6)由陶瓷的材料制成。
9.按照以上权利要求之一所述的发光二极管,在该发光二极管中,
- 支架(1)包括另一电绝缘层(13),该另一电绝缘层(13)被固定在金属基体(12)上的朝向发光二极管芯片(2)的侧面上,和
- 支架(1)包括固定在另一电绝缘层(13)上的背向金属基体(12)的侧面上的导电层(14),其中,
- 发光二极管芯片(2)与导电层(14)导电连接。
10.按照上一权利要求所述的发光二极管,在该发光二极管中,
- 至少一个开口(3)完全贯穿该另一电绝缘层(13)和导电层(14),和
- 用电绝缘的材料(4)覆盖至少一个开口(3)中的该另一电绝缘层(13)的侧面(131),和至少一个开口(3)中的导电层(14)的一个侧面(141)。
11.按照以上权利要求之一的发光二极管,在该发光二极管中,
- 电绝缘层(5)是陶瓷的层,和
- 电绝缘层(5)具有至少30 μm和最高100 μm的厚度。
12.按照上一权利要求所述的发光二极管,在该发光二极管中,
- 电绝缘层(5)由陶瓷的材料制成。
13.按照以上权利要求之一所述的发光二极管,在该发光二极管中,
- 电绝缘层(5)含有氮化硼,或由氮化硼制成。
14.按照以上权利要求之一所述的发光二极管,在该发光二极管中,
- 将至少两个发光二极管芯片(2)埋入反射包封(151)中,其中,
- 反射包封(151)覆盖了发光二极管芯片(2)的安装面(11)和侧面。
15.按照上一权利要求所述的发光二极管,在该发光二极管中,
- 反射包封(151)在日光下显现为白色。
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PCT/EP2011/058494 WO2012004049A1 (de) | 2010-07-07 | 2011-05-24 | Leuchtdiode |
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Publication number | Publication date |
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JP5955318B2 (ja) | 2016-07-20 |
KR101783755B1 (ko) | 2017-10-10 |
US8890306B2 (en) | 2014-11-18 |
EP2591502B1 (de) | 2017-10-11 |
US9431378B2 (en) | 2016-08-30 |
DE102010026344A1 (de) | 2012-01-12 |
WO2012004049A1 (de) | 2012-01-12 |
US20130207133A1 (en) | 2013-08-15 |
TWI525789B (zh) | 2016-03-11 |
US20150041834A1 (en) | 2015-02-12 |
CN103026488B (zh) | 2016-07-06 |
KR20130119908A (ko) | 2013-11-01 |
EP2591502A1 (de) | 2013-05-15 |
JP2013530541A (ja) | 2013-07-25 |
TW201205771A (en) | 2012-02-01 |
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