TWI525789B - 發光二極體 - Google Patents
發光二極體 Download PDFInfo
- Publication number
- TWI525789B TWI525789B TW100122157A TW100122157A TWI525789B TW I525789 B TWI525789 B TW I525789B TW 100122157 A TW100122157 A TW 100122157A TW 100122157 A TW100122157 A TW 100122157A TW I525789 B TWI525789 B TW I525789B
- Authority
- TW
- Taiwan
- Prior art keywords
- emitting diode
- light
- carrier
- electrically insulating
- insulating layer
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 239000011248 coating agent Substances 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 35
- 239000012777 electrically insulating material Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims 2
- 210000004508 polar body Anatomy 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 40
- 238000010292 electrical insulation Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 ruthenium epoxide Chemical class 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
- H05K3/445—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits having insulated holes or insulated via connections through the metal core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10409—Screws
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
本發明係關於一種發光二極體。
本發明之相關技術可參閱文件WO 2006/012842,其係描述一種發光模組。
當將發光二極體用於機動車輛前照燈中時,在操作期間要讓由發光二極體產生的熱消散通常是困難的問題。
設法解決的一個問題在於提供一種特別適用於例如機動車輛前照燈中的發光二極體。
根據發光二極體的至少一實施例,發光二極體包含載體。載體係為例如平板的形式。也就是說,載體的橫向延伸程度係大於其厚度。載體具有安裝面,其提供用於發光二極體之固定元件。
根據發光二極體的至少一實施例,發光二極體包含至少二個發光二極體晶片。發光二極體較佳地包含大量的發光二極體晶片,例如四或多個發光二極體晶片。發光二極體的發光二極體晶片係提供在操作期間,產生頻帶為紅外線輻射至紫外線輻射之電磁輻射。發光二極體晶片在此例子中表示發光二極體的光源。較佳地,發光二極體本身發射白光。
根據發光二極體的至少一實施例,至少二個發光二極體晶片(較佳地為發光二極體的所有發光二極體晶片)係至少間接於該安裝面固定至該載體上。至少間接的意思表示係有可能於發光二極體晶片與安裝面之間有另一材料,例如中間載體或例如黏著劑或銲料的連接裝置。
根據發光二極體的至少一實施例,載體具有金屬基本體。較佳地,金屬基本體接著形成載體之主要部分。例如,金屬基本體佔據載體至少90%的體積及重量。金屬基本體係以具有良好電傳導性以及熱傳導性的金屬形成,例如銅。
金屬基本體包含外部表面,其包含載體的安裝面。也就是說,載體之金屬基本體之外部表面的至少一些點形成安裝面,而至少二個發光二極體晶片係至少間接地於該安裝面固定於載體。
根據發光二極體的至少一實施例,至少二個發光二極體晶片(較佳地為發光二極體的所有發光二極體晶片)係以並聯的方式彼此電性連接。
根據發光二極體的至少一實施例,發光二極體包含具有安裝面以及至少二個發光二極體晶片的載體,發光二極體晶片係至少間接於安裝面處固定至載體。在此例子中,載體包含金屬基本體,其具有包含載體之安裝面的外部表面。發光二極體的至少二個發光二極體晶片於此例子中係以並聯的方式彼此連接。
除了其它事物之外,此處所述之發光二極體係以下列構想為基礎:將發光二極體的發光二極體晶片設置成盡可能靠近金屬基本體,能使在操作發光二極體期間,由發光二極體晶片產生特別有效的散熱。換句話說,發光二極體晶片所產生的熱係在熱產生之後能盡快地分佈於金屬基本體的整個體積上,而金屬基本體係形成載體的主要部分。
根據發光二極體的至少一實施例,發光二極體於載體中包含至少一開口。在此例子中的開口自載體上側延伸至載體下側,下側係面向遠離上側。例如,開口自載體頂面延伸至載體底面。開口較佳地完全通過載體。開口可為載體中例如鑽孔的形式,或者開口已於載體製造期間提供。開口具有內表面,載體材料在該內表面鄰接開口。在此例子中,內表面係被電性絕緣材料覆蓋。例如,開口的整個內表面係以電性絕緣材料塗佈,結果是載體材料之開口內沒有點是暴露的。
例如,開口係用以容納用來安裝發光二極體之固定裝置。例如,固定裝置可為用以壓合(press fit)的螺絲或者定位銷。
用以覆蓋開口之內表面之電性絕緣材料係為例如電性絕緣塑膠或者藉由例如二氧化矽或氮化矽之電性絕緣材料形成的層。此外,電性絕緣材料可為陶瓷。電性絕緣材料可含有氮化硼或由例如氮化硼所組成。電性絕緣材料可以層的形式完全地覆蓋開口之側面。電性絕緣材料可以例如介於至少30μm且至多100μm的厚度鋪設。
發光二極體可包含複數個開口於載體中,例如二或多個開口。每一開口係以所述方式組構而成,且用以容納用以安裝發光二極體於欲使用位置的固定裝置。
根據至少一實施例,開口完全地通過金屬基本體。也就是說,至少一開口係形成於金屬基本體區域的載體中。至少於金屬基本體區域中,開口的內表面接著較佳地以電性絕緣材料完全覆蓋。換句話說,金屬基本體在開口的任何一點並未被暴露出來,並可因此在發光二極體之操作期間以簡化方式維持無電位的狀態。
根據發光二極體的至少一實施例,載體的安裝面係設置於載體上側,且發光二極體晶片係直接於安裝面固定至載體。例如,發光二極體晶片在此例子中係於安裝面處銲接至載體。換句話說,除了例如銲料的連接裝置以外,發光二極體晶片係直接鋪設於載體的金屬基本體,並直接與其接觸。接著,電性絕緣層係在載體下側固定至載體,亦即,在載體中面向遠離安裝面的一側上。電性絕緣層較佳地直接與金屬基本體接觸。電性絕緣層較佳地係於載體下側完全覆蓋,除了開口以外。換句話說,金屬基本體接著亦藉由電性絕緣層完全地覆蓋於金屬基本體中面向遠離安裝面的一側上。
電性絕緣層在此例子中具有至少2W/(mk)的熱傳導性。
換句話說,在此具體實施例中,發光二極體晶片係直接安裝於金屬基本體上,其能使發光二極體晶片與載體具有最佳的熱耦合。載體的整個金屬基本體作為散熱元件。在此例子中,發光二極體晶片可電性導電連接至金屬基本體,且經由金屬基本體以並聯的方式彼此連接。金屬基本體的電性絕緣係以電性絕緣層形成於面向遠離安裝面的一側上,其特徵係在於特別高的熱傳導性。此種設計的發光二極體能使發熱源(亦即,發光二極體晶片)提早直接散熱,以及因此讓整個發光二極體有特別低的熱阻抗。
根據發光二極體之至少一實施例,電性絕緣層係為陶瓷層。這表示電性絕緣層具有陶瓷特性。電性絕緣層可包括陶瓷材料或由陶瓷材料組成。電性絕緣層在此例子中具有至少2W/(mk)的熱傳導性。
根據發光二極體之至少一實施例,電性絕緣層具有至少30μm且至多100μm的厚度。例如,電性絕緣層具有介於至少50μm且至多70μm之間的厚度。
根據發光二極體之至少一實施例,電性絕緣層含有氮化硼或由氮化硼所組成。在此例子中,電性絕緣層可具有至少30μm且至多100μm、例如介於至少50μm且至多70μm之間的厚度。電性絕緣層在此例子中具有至少2W/(mk)的熱傳導性。
根據發光二極體之至少一實施例,發光二極體晶片係電性導電連接至金屬基本體,且經由金屬基本體以並聯的方式彼此連接。也就是說,發光二極體晶片係具有相同於發光二極體晶片中面向金屬基本體的一側上的金屬基本體的電位。
根據發光二極體之至少一實施例,開口完全通過載體下側上的電性絕緣層。換句話說,電性絕緣層亦被開口中斷。在此例子中,開口可於電性絕緣層鋪設於金屬基本體之前或之後產生。開口中電性絕緣層的側面較佳地係被電性絕緣材料覆蓋,且內表面亦於金屬基本體之區域中以電性絕緣材料覆蓋。例如,為此目的,一旦電性絕緣層被鋪設於載體下側時,開口之內表面係僅以電性絕緣材料塗佈。在此例子中,亦有可能讓載體下側上之電性絕緣層以相同材料(亦即電性絕緣材料)形成。
根據發光二極體之至少一實施例,供發光二極體晶片固定的中間載體係設置於發光二極體晶片與安裝面之間。中間載體可包含陶瓷材料或由陶瓷材料組成。換句話說,中間載體表示發光二極體晶片與載體的電性絕緣,特別是與金屬基本體的電性絕緣。在此例子中,亦能免除載體下側的電性絕緣層。
根據發光二極體之至少一實施例,載體包含另一電性絕緣層,其係固定至金屬基本體中面向發光二極體晶片的一側上。供發光二極體晶片電性導電連接的電性導電層係接著設置於該另一電性絕緣層中面向遠離金屬基本體的一側上。電性導電層可於此例子中建構以形成導體軌跡,其產生發光二極體之發光二極體晶片之間的接觸。
根據發光二極體之至少一實施例,開口完全地通過另一電性絕緣層以及電性導電層。在此例子中,開口中之另一電性絕緣層以及電性導電層的側面係被電性絕緣材料覆蓋。換句話說,在此具體實施例中,較佳地,開口之整個內表面係被電性絕緣材料覆蓋。除了金屬基本體之外,另一電性絕緣層以及電性導電層亦被電性絕緣材料覆蓋,且因而與開口中的固定裝置電性絕緣。
根據發光二極體之至少一實施例,發光二極體的至少二個發光二極體晶片係埋入於反射塗層中。較佳地,發光二極體的所有發光二極體晶片係埋入於反射塗層中。
「埋入」的意思於此處表示反射塗層覆蓋發光二極體晶片的至少一些點,且與發光二極體晶片於覆蓋位置直接接觸。例如,能夠讓反射塗層與發光二極體晶片中面向遠離載體的輻射離開表面齊平。橫向於安裝面之發光二極體晶片的那些側面接著完全地被例如反射塗層覆蓋。
此外,能讓反射塗層覆蓋發光二極體晶片中面向遠離安裝面的的輻射離開表面。然後,反射塗層於該處具有微小厚度,使得發光二極體晶片在操作期間產生的光可穿過反射塗層通至外部。於發光二極體晶片的輻射離開表面上,反射塗層接著作為擴散層,其擴散通過擴散層的光線。
除了發光二極體晶片以外,反射塗層較佳地亦覆蓋至少部分安裝面。例如,安裝面係被反射塗層材料完全地覆蓋於完全暴露的點,亦即,特別是無發光二極體晶片之處。特別是,亦能讓整個載體在其面向發光二極體晶片之表面被反射塗層覆蓋。換句話說,載體在此表面的所有暴露區域係接著被反射塗層覆蓋。
在此例子中,當以例如日光照射時,對於觀察者而言,係能讓反射塗層以白色呈現。換句話說,當發光二極體藉由反射塗層以適當方式覆蓋時,亦即,例如,當面向發光二極體晶片之表面上載體的所有暴露表面係藉由反射塗層覆蓋時,發光二極體本身可呈現白色。
在此例子中,反射塗層係以例如擴散的方式反射。反射塗層可藉由基質材料形成。基質材料可含有例如矽,或者由矽組成。此外,基質材料係有可能為具有環氧化物之矽混合物(亦即,所謂的矽環氧化物混合材料)。反射粒子可被導入反射塗層之基質材料中。反射粒子係藉由例如下列材料之一形成,亦即反射粒子可由下列材料之一組成:TiO 2 、BaSO 4 、ZnO、AlxOy、ZrO 2。特別是,以ZrO 2形成的輻射反射粒子係特別適用於反射藍光或紫外光。
特別是,係能讓基質材料中的反射塗層含有由上述不同材料所形成之不同反射粒子的混合物。以此方式,反射塗層的反射頻譜可特別符合發光二極體的需求。
此處所述之發光二極體將以下列具體實施例及相關圖式詳細說明。
相同、相似或功能相同之元件係於圖式中設為相同元件符號。圖式以及圖式中所示元件之尺寸關係與另一者不應被視為實際尺寸。相反地,為求增進表述及/或清楚理解,個別元件可以誇大尺寸說明。
第1圖顯示此處所述之發光二極體之第一具體實施例之示意剖面圖。發光二極體包含載體1。載體1包含金屬基本體12,金屬基本體12形成載體之主要部分。在此例子中,金屬基本體12佔據載體至少95%的體積及重量。金屬基本體係以例如銅形成,亦即,金屬基本體包含銅或由銅組成。
再者,載體1包含另外的電性絕緣層13,其係舖設於載體之上側1a之金屬基本體12的外部表面121的點上。於此例子中,另外的電性絕緣層13可與金屬基本體12直接接觸。電性導電層14(其係建構以形成例如導線軌跡(conductor track))係舖設於另外的電性絕緣層13中面向遠離金屬基本體12的一側上。
載體1具有開口3,其自載體1之上側1a到載體1之下側1b完全地通過載體,亦即,通過金屬基本體12、電性絕緣層13、以及電性導電層14。
於此例中,每一開口3之內表面31係被電性絕緣材料4完全地覆蓋。也就是說,電性絕緣材料4覆蓋金屬基本體12的側面、另外的電性絕緣層之側面131以及電性導電層之側面141。
每一開口係用以容納固定裝置8,例如螺絲。固定裝置8在此例子中係提供用以安裝發光二極體(可參見第3圖之固定裝置8)。
在第1圖所示之具體實施例中,發光二極體晶片2係以例如銲接的方式於載體1之安裝面11處直接鋪設至金屬基本體12。發光二極體晶片2於此例子中係以並聯方式彼此連接,並且在發光二極體晶片中面向金屬基本體12之一側上具有與金屬基本體12相同的電位。
發光二極體晶片2係電性導電連接至電性導電層14,電性導電層14係建構成藉由銲線21形成導體軌跡。此處係有可能讓其中一條銲線21直接電性導電連接至金屬基本體12。例如,發光二極體包含四個發光二極體晶片,其係提供用以在操作期間產生藍光及/或UV輻射。發光轉換材料係接著順著設置於每一發光二極體晶片2或一起設置於所有發光二極體晶片2,發光轉換材料以全程白光係藉由發光二極體發射的方式,在操作期間轉換藉由發光二極體晶片2產生的至少某些電磁輻射。
第1圖所示具體實施例中,蓋體7(其機械連接固定至載體1)係順著設置於所有發光二極體晶片2。蓋體7可以是由例如玻璃組成的蓋體。此外,係有可能讓蓋體7含有陶瓷發光轉換材料的粒子或者讓蓋體7由陶瓷發光轉換材料組成。
在載體1中面向遠離發光二極體晶片2之下側,電性絕緣層5較佳地係直接鋪設於金屬基本體2上,該電性絕緣層將載體1予以電性絕緣。電性絕緣層的側面51可被完全地通過電性絕緣層5之開口3的區域中的電性絕緣材料4所覆蓋。在此例子中,也有可能以相同材料形成電性絕緣材料4以及電性絕緣層5。
關於第2圖,此處所述之發光二極體之第二具體實施例將參考示意剖面圖而更詳細解釋。相較於第1圖所示之具體實施例,在此具體實施例中,係經由電性導電層14而與發光二極體晶片2產生接觸,電性導電層14係建構成形成導體軌跡。為此目的,電性導電層14係與發光二極體晶片2的連接點(未圖示)直接接觸。在第2圖所示之具體實施例中,為此目的,另外的電性絕緣層13係於特定點至少覆蓋發光二極體之某些發光二極體晶片的側面。電性導電層14係沿著這些發光二極體晶片2之側面上的電性絕緣層13通到發光二極體晶片2的電性連接點。
關於第3圖,此處所述之發光二極體之第三具體實施例係參考示意剖面圖而詳細解釋。在此具體實施例中,相較於第1圖,並無電性絕緣層5。發光二極體晶片2係經由電性絕緣中間載體6而與載體1的金屬基本體12電性絕緣,電性絕緣中間載體6係設置於金屬基本體12與發光二極體晶片2之間。中間載體6係由例如陶瓷材料組成。於中間載體6中面向遠離金屬基本體12的一側上,可建構金屬導體軌跡,發光二極體晶片2係經由金屬導體軌跡而平行連接於中間載體6上。第3圖中所示的發光二極體的特徵係在於簡化第1圖及第2圖所示具體實施例的製造程序,因為不需鋪設電性絕緣層5。相較於第1圖及第2圖所說明的具體實施例,其優點係在於沒有熱直接自發光二極體晶片2散發至金屬基本體12內,而是藉由中間載體6降低熱傳導率。
在所有具體實施例中,係能夠提供或免除蓋體7。蓋體7可形成發光二極體晶片2的機械保護,並且進一步展現例如輻射轉換及/或輻射擴散的光學特性。
此處所述之發光二極體之另一具體實施例係參考第4圖所示之示意剖面圖說明。相較於先前具體實施例,此例中的發光二極體包含埋入發光二極體晶片2之反射塗層151。在此例子中的反射塗層151完全地覆蓋載體1的安裝面11。在第4圖所示之具體實施例中,發光二極體晶片2從反射塗層151突出其面向遠離載體1的表面,這些表面代表發光二極體晶片2的輻射離開表面。例如,反射塗層151與這些表面齊平。在此例子中,反射塗層係以例如矽的基質材料形成,例如,以被導入至該基質材料中的輻射反射粒子形成,例如,由二氧化鈦組成。
於此例中,反射塗層151可使用於此處所述之發光二極體的所有具體實施例。例如,在第3圖所示之具體實施例中,反射塗層151亦可完全地覆蓋中間載體6之暴露的外部表面。
本發明並不受限於具體實施例所述內容。相反地,本發明包含任何新穎特徵且同時包含任何結合之特徵,其中,特別是包括申請專利範圍中任何結合的特徵,即使特徵或結合的特徵本身並未明確地指定於專利申請範圍或具體實施例中。
1...載體
1a...載體上側
1b...載體下側
2...發光二極體晶片
3...開口
4...電性絕緣材料
5‧‧‧電性絕緣層
6‧‧‧中間載體
7‧‧‧蓋體
8‧‧‧固定裝置
11‧‧‧安裝面
12‧‧‧金屬基本體
13‧‧‧另一電性絕緣層
14‧‧‧電性導電層
21‧‧‧銲線
31‧‧‧開口內表面
51‧‧‧電性絕緣層之側面
121‧‧‧金屬基本體之外部表面
131‧‧‧另一電性絕緣層之側面
141‧‧‧電性導電層之側面
151‧‧‧反射塗層
第1、2、3及4圖顯示此處使用示意剖示圖所描述之發光二極體的具體實施例。
1...載體
1a...載體上側
1b...載體下側
2...發光二極體晶片
3...開口
4...電性絕緣材料
5...電性絕緣層
7...蓋體
11...安裝面
12...金屬基本體
13...另一電性絕緣層
14...電性導電層
21...銲線
31...開口內表面
51...電性絕緣層之側面
121...金屬基本體之外部表面
131...另一電性絕緣層之側面
141...電性導電層之側面
Claims (17)
- 一種發光二極體,包含:載體(1),係具有安裝面(11),以及至少二個發光二極體晶片(2),係至少於該安裝面(11)間接固定至該載體(1)上;該載體(1)包含金屬基本體(12);該金屬基本體(12)之外部表面(121)包含該安裝面(11);該至少二個發光二極體晶片(2)係以彼此並聯的方式連接;該至少二個發光二極體晶片(2)係埋入於反射塗層(151)中,其中,該反射塗層(151)覆蓋該安裝面(11)以及該發光二極體晶片(2)之側面;以及該發光二極體晶片(2)以其遠離該載體(1)的輻射離開表面突出於該反射塗層(151)或該反射塗層(151)與該輻射離開表面齊平。
- 如申請專利範圍第1項所述之發光二極體,其中:該安裝面(11)係設置於該載體(1)的上側(1a);該發光二極體晶片(2)係直接於該安裝面處(11)固定至該載體(1);以及電性絕緣層(5)係在該載體(1)之下側(1b)固定至該載體(1);該電性絕緣層(5)具有至少2W/(mk)的熱傳導率。
- 如申請專利範圍第2項所述之發光二極體,其中: 該電性絕緣層(5)係陶瓷層;以及該電性絕緣層(5)係具有至少30μm和至多100μm的厚度。
- 如申請專利範圍第2項所述之發光二極體,其中,該電性絕緣層(5)係由陶瓷材料組成。
- 如申請專利範圍第2項所述之發光二極體,其中,該電性絕緣層(5)包括氮化硼或由氮化硼所組成。
- 如申請專利範圍第1項所述之發光二極體,包含:至少一個開口(3),係位於該載體(1)中,該開口自該載體(1)之上側(1a)延伸至該載體(1)之下側(1b),且該下側面向遠離該上側(1a);該至少一個開口(3)完全通過該載體(1);該至少一個開口(3)的內表面(31)係被電性絕緣材料(4)覆蓋,以及該至少一個開口(3)係提供用以容納安裝該發光二極體之固定裝置(8)。
- 如申請專利範圍第6項所述之發光二極體,其中,該至少一個開口(3)完全通過該金屬基本體(12)。
- 如申請專利範圍第6項所述之發光二極體,其中:該至少一個開口(3)完全通過該電性絕緣層(5)。
- 如申請專利範圍第6項所述之發光二極體,其中,該至少一個開口(3)中之該電性絕緣層(5)之側面(51)係被該電性絕緣材料(4)覆蓋。
- 如申請專利範圍第1項至第9項中任一項所述之發光二 極體,其中,該發光二極體晶片(2)係電性導電連接至該金屬基本體(12),且經由該金屬基本體(12)以並聯的方式彼此連接。
- 如申請專利範圍第1項至第9項中任一項所述之發光二極體,其中,供該發光二極體晶片(2)固定的中間載體(6)係設置於該發光二極體晶片(2)以及該安裝面(11)之間。
- 如申請專利範圍第11項所述之發光二極體,其中,該中間載體(6)係由陶瓷材料組成。
- 如申請專利範圍第1項至第9項中任一項所述之發光二極體,其中,該載體(1)包含另外的電性絕緣層(13),該電性絕緣層(13)係固定至該金屬基本體(12)中面向該發光二極體晶片(2)的一側上;以及該載體(1)包含電性導電層(14),該電性導電層(14)係固定至該另外的電性絕緣層(13)中面向遠離該金屬基本體(12)的一側上;該發光二極體晶片(2)係電性導電連接至該電性導電層(14)。
- 如申請專利範圍第13項所述之發光二極體,其中,該至少一個開口(3)完全通過該另外的電性絕緣層(13)以及該電性導電層(14),以及該至少一個開口(3)中之該另外的電性絕緣層(13)之側面(131)以及該至少一個開口(3)中之該電性導電層(14)之側面(141)係被該電性絕緣材料(4)覆蓋。
- 如申請專利範圍第1項至第9項中任一項所述之發光二極體,其中,該反射塗層(151)於日光下顯示為白色。
- 如申請專利範圍第1項至第9項中任一項所述之發光二極體,其中,該金屬基本體(12)佔據該載體(1)至少90%的體積及至少90%的重量。
- 如申請專利範圍第1項至第9項中任一項所述之發光二極體,其中,該反射塗層(151)係於該發光二極體晶片(2)被覆蓋的側面直接與該發光二極體晶片(2)接觸。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010026344A DE102010026344A1 (de) | 2010-07-07 | 2010-07-07 | Leuchtdiode |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201205771A TW201205771A (en) | 2012-02-01 |
TWI525789B true TWI525789B (zh) | 2016-03-11 |
Family
ID=44510883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100122157A TWI525789B (zh) | 2010-07-07 | 2011-06-24 | 發光二極體 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8890306B2 (zh) |
EP (1) | EP2591502B1 (zh) |
JP (1) | JP5955318B2 (zh) |
KR (1) | KR101783755B1 (zh) |
CN (1) | CN103026488B (zh) |
DE (1) | DE102010026344A1 (zh) |
TW (1) | TWI525789B (zh) |
WO (1) | WO2012004049A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009054519A1 (de) * | 2009-12-10 | 2011-06-16 | Osram Gesellschaft mit beschränkter Haftung | Led-Lampe |
DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
KR101922528B1 (ko) * | 2012-07-06 | 2018-11-28 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US10591124B2 (en) | 2012-08-30 | 2020-03-17 | Sabic Global Technologies B.V. | Heat dissipating system for a light, headlamp assembly comprising the same, and method of dissipating heat |
GB201216024D0 (en) * | 2012-09-07 | 2012-10-24 | Litecool Ltd | LED thermal management |
DE102012112988A1 (de) * | 2012-12-21 | 2014-07-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Scheinwerfer |
DE102013103409A1 (de) * | 2013-04-05 | 2014-10-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Modul |
JP2015109337A (ja) * | 2013-12-04 | 2015-06-11 | 日東電工株式会社 | 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置 |
DE102015107591B4 (de) * | 2015-05-13 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
CN211045429U (zh) * | 2016-07-15 | 2020-07-17 | 3M创新有限公司 | 柔性多层构造以及lesd封装 |
Family Cites Families (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5213716B2 (zh) * | 1971-12-22 | 1977-04-16 | ||
US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
US6586835B1 (en) * | 1998-08-31 | 2003-07-01 | Micron Technology, Inc. | Compact system module with built-in thermoelectric cooling |
JP2000150969A (ja) * | 1998-11-16 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体発光装置 |
DE10034865B4 (de) * | 2000-07-18 | 2006-06-01 | Infineon Technologies Ag | Optoelektronisches oberflächenmontierbares Modul |
DE10051159C2 (de) * | 2000-10-16 | 2002-09-19 | Osram Opto Semiconductors Gmbh | LED-Modul, z.B. Weißlichtquelle |
AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
CN1212676C (zh) * | 2001-04-12 | 2005-07-27 | 松下电工株式会社 | 使用led的光源装置及其制造方法 |
US6625027B2 (en) * | 2001-10-31 | 2003-09-23 | Baker Hughes Incorporated | Method for increasing the dielectric strength of isolated base integrated circuits used with variable frequency drives |
US7141310B2 (en) * | 2002-04-17 | 2006-11-28 | Ceramics Process Systems Corporation | Metal matrix composite structure and method |
DE10229067B4 (de) * | 2002-06-28 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
DE10245946C1 (de) | 2002-09-30 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Lichtquellenmoduls |
JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
WO2004068596A1 (en) * | 2003-01-25 | 2004-08-12 | Nam-Young Kim | Lamp module with light emitting diode |
EP1644991A2 (en) * | 2003-07-16 | 2006-04-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same |
JPWO2005052666A1 (ja) * | 2003-11-27 | 2008-03-06 | イビデン株式会社 | Icチップ実装用基板、マザーボード用基板、光通信用デバイス、icチップ実装用基板の製造方法、および、マザーボード用基板の製造方法 |
WO2005091388A1 (en) * | 2004-03-18 | 2005-09-29 | Matsushita Electric Industrial Co., Ltd. | Nitride based led with a p-type injection region |
DE102004021233A1 (de) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
DE102004036157B4 (de) | 2004-07-26 | 2023-03-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Leuchtmodul |
US7745832B2 (en) * | 2004-09-24 | 2010-06-29 | Epistar Corporation | Semiconductor light-emitting element assembly with a composite substrate |
DE102004050371A1 (de) * | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung |
US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
US7821023B2 (en) * | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
DE102005009060A1 (de) * | 2005-02-28 | 2006-09-07 | Osram Opto Semiconductors Gmbh | Modul mit strahlungsemittierenden Halbleiterkörpern |
WO2006114745A2 (en) | 2005-04-28 | 2006-11-02 | Koninklijke Philips Electronics N.V. | Light source comprising led arranged in recess |
JP4791462B2 (ja) | 2005-05-30 | 2011-10-12 | 京セラ株式会社 | 液晶表示装置 |
EP1890341B1 (en) * | 2005-06-07 | 2012-07-11 | Fujikura Ltd. | Porcelain enameled substrate for light-emitting device mounting, light-emitting device module, illuminating device, display and traffic signal device |
EP1897146A2 (en) * | 2005-06-27 | 2008-03-12 | Lamina Lighting, Inc. | Light emitting diode package and method for making same |
JP2007067216A (ja) | 2005-08-31 | 2007-03-15 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法、回路基板およびその製造方法 |
KR100616695B1 (ko) * | 2005-10-04 | 2006-08-28 | 삼성전기주식회사 | 고출력 발광 다이오드 패키지 |
JP2007165507A (ja) * | 2005-12-13 | 2007-06-28 | Fujikura Ltd | 発光素子実装用基板およびその製造方法、並びに、発光素子モジュール、表示装置、照明装置、交通信号機 |
US20070228386A1 (en) * | 2006-03-30 | 2007-10-04 | Jin-Shown Shie | Wire-bonding free packaging structure of light emitted diode |
DE102006015335B4 (de) * | 2006-04-03 | 2013-05-02 | Ivoclar Vivadent Ag | Halbleiter-Strahlungsquelle sowie Lichthärtgerät |
US20090279300A1 (en) * | 2006-05-31 | 2009-11-12 | Denki Kagaku Kogyo Kabushiki Kaisha | Led light source unit |
KR100854328B1 (ko) | 2006-07-07 | 2008-08-28 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
KR100845856B1 (ko) * | 2006-12-21 | 2008-07-14 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
US8664683B2 (en) * | 2006-12-21 | 2014-03-04 | Koninklijke Philips N.V. | Carrier and optical semiconductor device based on such a carrier |
CN101669219B (zh) * | 2006-12-22 | 2011-10-05 | 昆南诺股份有限公司 | 带有直立式纳米线结构的led及其制作方法 |
JP4872663B2 (ja) * | 2006-12-28 | 2012-02-08 | 株式会社日立製作所 | 接合用材料及び接合方法 |
JP5102051B2 (ja) | 2007-01-18 | 2012-12-19 | シチズン電子株式会社 | 半導体発光装置 |
JP5410098B2 (ja) * | 2007-01-30 | 2014-02-05 | 電気化学工業株式会社 | Led光源ユニット |
JP5089212B2 (ja) * | 2007-03-23 | 2012-12-05 | シャープ株式会社 | 発光装置およびそれを用いたledランプ、発光装置の製造方法 |
JP4332567B2 (ja) * | 2007-03-27 | 2009-09-16 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法及び実装方法 |
US7783141B2 (en) * | 2007-04-04 | 2010-08-24 | Ibiden Co., Ltd. | Substrate for mounting IC chip and device for optical communication |
TW200900628A (en) * | 2007-06-28 | 2009-01-01 | Wen-Chin Shiau | Manufacturing method of heat-dissipating structure of high-power LED lamp seat and product thereof |
TW200924218A (en) * | 2007-11-16 | 2009-06-01 | Bright Led Electronics Corp | Packaging device of series- and parallel-connected LED and a light emitting device therewith |
US9024340B2 (en) * | 2007-11-29 | 2015-05-05 | Nichia Corporation | Light emitting apparatus and method for producing the same |
WO2009075530A2 (en) | 2007-12-13 | 2009-06-18 | Amoleds Co., Ltd. | Semiconductor and manufacturing method thereof |
DE102008019902A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement |
US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
US20110163348A1 (en) * | 2008-03-25 | 2011-07-07 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bump/base heat spreader and inverted cavity in bump |
US8067777B2 (en) * | 2008-05-12 | 2011-11-29 | Occam Portfolio Llc | Light emitting diode package assembly |
JP5236070B2 (ja) | 2008-05-13 | 2013-07-17 | シーメンス アクチエンゲゼルシヤフト | Ledアレイ |
CN102047772B (zh) * | 2008-05-29 | 2012-12-26 | 电气化学工业株式会社 | 金属基电路板 |
US8159131B2 (en) * | 2008-06-30 | 2012-04-17 | Bridgelux, Inc. | Light emitting device having a transparent thermally conductive layer |
US7859190B2 (en) * | 2008-09-10 | 2010-12-28 | Bridgelux, Inc. | Phosphor layer arrangement for use with light emitting diodes |
US8853712B2 (en) * | 2008-11-18 | 2014-10-07 | Cree, Inc. | High efficacy semiconductor light emitting devices employing remote phosphor configurations |
JP4544361B2 (ja) * | 2008-11-26 | 2010-09-15 | 日亜化学工業株式会社 | 発光装置 |
JP4808244B2 (ja) * | 2008-12-09 | 2011-11-02 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
US7799602B2 (en) * | 2008-12-10 | 2010-09-21 | Stats Chippac, Ltd. | Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure |
US9257356B2 (en) * | 2008-12-10 | 2016-02-09 | Stats Chippac, Ltd. | Semiconductor device and method of forming an IPD beneath a semiconductor die with direct connection to external devices |
TW201114003A (en) * | 2008-12-11 | 2011-04-16 | Xintec Inc | Chip package structure and method for fabricating the same |
DE102009008738A1 (de) * | 2009-02-12 | 2010-08-19 | Osram Opto Semiconductors Gmbh | Halbleiteranordnung und Verfahren zum Herstellen einer Halbleiteranordnung |
KR101077264B1 (ko) * | 2009-02-17 | 2011-10-27 | (주)포인트엔지니어링 | 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법 |
CN101515621B (zh) * | 2009-02-19 | 2011-03-30 | 旭丽电子(广州)有限公司 | 发光二极管芯片、制法及封装方法 |
TWI413284B (zh) * | 2009-02-24 | 2013-10-21 | Ind Tech Res Inst | 發光二極體封裝結構 |
TWI407596B (zh) * | 2009-03-06 | 2013-09-01 | Advanced Optoelectronic Tech | 側邊散熱型發光二極體及其製程 |
TWI480962B (zh) * | 2009-04-09 | 2015-04-11 | Lextar Electronics Corp | 發光二極體封裝以及發光二極體晶圓級封裝製程 |
US8207547B2 (en) * | 2009-06-10 | 2012-06-26 | Brudgelux, Inc. | Thin-film LED with P and N contacts electrically isolated from the substrate |
US9048404B2 (en) * | 2009-07-06 | 2015-06-02 | Zhuo Sun | Thin flat solid state light source module |
DE102009033287A1 (de) * | 2009-07-15 | 2011-01-20 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
DE102009036621B4 (de) * | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
FR2949278B1 (fr) * | 2009-08-18 | 2012-11-02 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif d'emission de lumiere a base de diodes electroluminescentes |
KR101124102B1 (ko) * | 2009-08-24 | 2012-03-21 | 삼성전기주식회사 | 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지 |
US9875911B2 (en) * | 2009-09-23 | 2018-01-23 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming interposer with opening to contain semiconductor die |
US8602593B2 (en) * | 2009-10-15 | 2013-12-10 | Cree, Inc. | Lamp assemblies and methods of making the same |
DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
US20110170303A1 (en) * | 2010-01-14 | 2011-07-14 | Shang-Yi Wu | Chip package and fabrication method thereof |
TW201213972A (en) * | 2010-01-29 | 2012-04-01 | Nitto Denko Corp | Backlighting assembly and liquid crystal display device |
KR101055095B1 (ko) * | 2010-03-09 | 2011-08-08 | 엘지이노텍 주식회사 | 발광장치 |
US9105824B2 (en) * | 2010-04-09 | 2015-08-11 | Cree, Inc. | High reflective board or substrate for LEDs |
EP2378576A2 (en) * | 2010-04-15 | 2011-10-19 | Samsung LED Co., Ltd. | Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package |
US20110284887A1 (en) * | 2010-05-21 | 2011-11-24 | Shang-Yi Wu | Light emitting chip package and method for forming the same |
US8236617B2 (en) * | 2010-06-04 | 2012-08-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming thermally conductive layer between semiconductor die and build-up interconnect structure |
DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
DE102011115314B4 (de) * | 2011-09-29 | 2019-04-25 | Osram Opto Semiconductors Gmbh | LED-Modul |
DE102011056888A1 (de) * | 2011-12-22 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
US9874316B2 (en) * | 2012-01-03 | 2018-01-23 | Philips Lighting Holding B.V. | Lighting assembly, a light source and a luminaire |
US8783911B2 (en) * | 2012-02-17 | 2014-07-22 | Tsmc Solid State Lighting Ltd. | LED packaging structure having improved thermal dissipation and mechanical strength |
JP5558595B2 (ja) * | 2012-03-14 | 2014-07-23 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
DE102012207519A1 (de) * | 2012-05-07 | 2013-11-07 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines bauelementträgers, einer elektronischen anordnung und einer strahlungsanordnung und bauelementträger, elektronische anordnung und strahlungsanordnung |
DE102013101367A1 (de) * | 2013-02-12 | 2014-08-14 | Osram Opto Semiconductors Gmbh | Halbleiterchip |
-
2010
- 2010-07-07 DE DE102010026344A patent/DE102010026344A1/de not_active Withdrawn
-
2011
- 2011-05-24 JP JP2013517126A patent/JP5955318B2/ja active Active
- 2011-05-24 CN CN201180033633.7A patent/CN103026488B/zh active Active
- 2011-05-24 WO PCT/EP2011/058494 patent/WO2012004049A1/de active Application Filing
- 2011-05-24 EP EP11726076.0A patent/EP2591502B1/de active Active
- 2011-05-24 US US13/808,300 patent/US8890306B2/en active Active
- 2011-05-24 KR KR1020137003132A patent/KR101783755B1/ko active IP Right Grant
- 2011-06-24 TW TW100122157A patent/TWI525789B/zh active
-
2014
- 2014-10-16 US US14/515,802 patent/US9431378B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP5955318B2 (ja) | 2016-07-20 |
KR20130119908A (ko) | 2013-11-01 |
CN103026488A (zh) | 2013-04-03 |
EP2591502A1 (de) | 2013-05-15 |
WO2012004049A1 (de) | 2012-01-12 |
US20130207133A1 (en) | 2013-08-15 |
JP2013530541A (ja) | 2013-07-25 |
DE102010026344A1 (de) | 2012-01-12 |
EP2591502B1 (de) | 2017-10-11 |
US8890306B2 (en) | 2014-11-18 |
US9431378B2 (en) | 2016-08-30 |
CN103026488B (zh) | 2016-07-06 |
KR101783755B1 (ko) | 2017-10-10 |
US20150041834A1 (en) | 2015-02-12 |
TW201205771A (en) | 2012-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI525789B (zh) | 發光二極體 | |
US7868345B2 (en) | Light emitting device mounting substrate, light emitting device housing package, light emitting apparatus, and illuminating apparatus | |
RU2473152C1 (ru) | Полупроводниковое светоизлучающее устройство | |
KR100620844B1 (ko) | 발광장치 및 조명장치 | |
US8106584B2 (en) | Light emitting device and illumination apparatus | |
US9420642B2 (en) | Light emitting apparatus and lighting apparatus | |
JP5908673B2 (ja) | Led電球 | |
US10393320B2 (en) | Method of forming a component module | |
TW200423431A (en) | Semiconductor light-emitting device | |
TWI606616B (zh) | 發光裝置封裝件 | |
JP2010003674A (ja) | 光源ユニット及び照明装置 | |
JP2007142173A (ja) | 照明装置 | |
JP2018120959A (ja) | 発光装置及び照明装置 | |
TWI496323B (zh) | 發光模組 | |
JP2012015330A (ja) | 発光モジュールおよび照明装置 | |
JP2015082550A (ja) | 発光モジュール、照明装置および照明器具 | |
JP2005039194A (ja) | 発光素子収納用パッケージおよび発光装置ならびに照明装置 | |
JP5530321B2 (ja) | ランプ及び照明装置 | |
JP2014135437A (ja) | 発光モジュール、照明装置および照明器具 | |
TW201233261A (en) | Light emitting module and lighting equipment | |
KR102142718B1 (ko) | 발광 소자 및 이를 구비한 조명 장치 | |
JP2010238971A (ja) | 発光体および照明器具 | |
JP7037044B2 (ja) | 発光装置及びその製造方法 | |
JP2017162941A (ja) | 発光装置、及び、照明装置 | |
KR101433734B1 (ko) | 엘이디 패키지 |