TW201233261A - Light emitting module and lighting equipment - Google Patents

Light emitting module and lighting equipment Download PDF

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Publication number
TW201233261A
TW201233261A TW100139111A TW100139111A TW201233261A TW 201233261 A TW201233261 A TW 201233261A TW 100139111 A TW100139111 A TW 100139111A TW 100139111 A TW100139111 A TW 100139111A TW 201233261 A TW201233261 A TW 201233261A
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Taiwan
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light
layer
power supply
module
emitting
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TW100139111A
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Chinese (zh)
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TWI445465B (en
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Tomohiro Sanpei
Erika Takenaka
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Toshiba Lighting & Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

An embodiment of a light emitting module is formed by laminating a reflective layer made of a metal on a substrate including a polyimide layer, and mounting a light emitting element on the reflective layer by an eutectic solder.

Description

201233261 * ▽ if 六、發明說明： 【發明所屬之技術領域】 本發明的實施形態關於一種在基板上排列安裝有多個 發光元件的發光模組（module)以及裝入有該發光模組的 照明設備。 【先前技術】 近年來，開發有將多個發光元件（例如發光二極體 (Light Emitting Diode ’ LED))排列安裝在基板上的發光 模組，裝入有此種發光模組的照明設備逐漸得到普及。 發光模組例如包括：基板’於表面具有絕緣層；金屬 製的反射層’部分積層於該基板的表面（即絕緣層的表 面）；多個LED晶片’安裝在該反射層上；以及密封構件， 將該些反射層以及多個LED晶片密封於基板表面且具有 透光性。 例如，基板表面的絕緣層是使環氧（ep〇xy)樹脂與硬 化劑反應而形成。反射層是對應於每個LED晶片而個別地 設有多個，或者針對多個LED晶片的整個安裝區域而設有 1個，且於表面具有鍍銀層。多個LED為發出藍色光的藍 色LED。密封構件是於具有透氣性的聚魏（灿_)樹 脂中混入榮光體㈣成’該螢紐錢色光激發而放射出 存在補色關係的黃色光。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開2008-277561號公報 20123326lf 於上述先前的發光模組中，自led晶片放出的藍色光 的卩分會入射至未設有反射層的絕緣層的表面。並且， 環氧樹脂的硬化劑在藍色光的作用下分解而氣化。進而， 該有機氣體透過密封構件而與反射層表面的銀發生反應。 由此，反射層的表面會隨時間變黑，光的反射率隨時 間下降。此種現象將持續至不再自絕緣層放出氣體為止。 因而，期望開發出一種可長期維持發光強度的發光模 組以及裝入有此種發光模組的照明設備。 【發明内容】 實施形態的發光模組是在包含聚醯亞胺（p〇lyimide ) 層的基板上積層金屬製的反射層，並在該反射層上經由共 晶焊料來安裝發光元件而形成。 【實施方式】 以下，參照圖面來詳細說明實施形態。 圖1中’作為裝入有實施形態的發光模組的照明設備 的一例’示出了 LED燈1〇〇的外觀圖。而且，於圖2中， 表示沿軸線將圖1的LED燈1〇〇切斷的剖面圖。 LED燈100具備本體1〇2、絕緣構件111、燈頭115、 點燈裝置121、發光模組1及照明罩（cover) 161。 該LED燈100例如是將燈頭115螺合於未圖示的燈座 (socket)且使照明罩161以朝下的姿勢而安裝，所述燈 座安裝於天花板。即，於圖1 '圖2中，是以與安裝狀態 為上下反轉的狀態來圖示LED燈100。 本體102包含導熱率相對較高的鋁。如圖2所示，於 4 201233261 本體102的圖示上端，設有用於安裝發光模組丨的模組固 定台103。而且’於該模組固定台103的周圍，自本體上 端一體地突出設置有圓環狀的罩安裝凸部1〇4。 而且，於本體102的圖示下端側，設有朝向圖示上方 而凹陷的凹部105。進而’於本體102的内部，形成有沿 其軸向延伸的穿線孔1〇6。穿線孔1〇6的圖示上端於本體 1〇2的上端面開口，穿線孔106的圖示下端於凹部1〇5的 底面開口。而且’連續於穿線孔6的上端且沿著模組固定 台1〇3的背面’設有以橫向彎曲的方式形成的溝部1〇6a。 進而，於本體102的外周，一體地具有多個散熱鰭片 (fin) 1〇7。該些多個散熱鰭片ι〇7如圖1所示，以朝向 本體102的上端向外侧展開的方式而彎曲地延伸設置。該 些多個散熱鰭片107是為了使自發光模組1產生的熱散發 至LED燈1()〇的外部而設。 絕緣構件111如圖2中的剖面所示，形成為有底圓筒 狀。而且，絕緣構件111於其高度方向中間部一體地具有 自其外周面而突出設置的圓環狀的絕緣凸部112。並且， 該絕緣構件111以使其底壁llla接觸凹部1〇5的底面並且 使絕緣凸部112卡合於凹部1〇5的開口的邊緣的方式，而 收容配置於凹部105内。即，絕緣構件1U的外面緊貼並 接觸凹部105的内面。 絕緣構件111的比絕緣凸部112更靠近圖示下側的部 分比本體102的圖示下端更向圖示下側突出。換言之，僅 絕緣構件111的比絕緣凸部112更靠近圖示上方的部分插 201233261201233261 * ▽ if 6. Description of the Invention: TECHNICAL FIELD Embodiments of the present invention relate to a light-emitting module in which a plurality of light-emitting elements are arranged on a substrate, and illumination in which the light-emitting module is incorporated device. [Prior Art] In recent years, a light-emitting module in which a plurality of light-emitting elements (for example, Light Emitting Diodes (LEDs)) are arranged and mounted on a substrate has been developed, and an illumination device incorporating such a light-emitting module is gradually developed. Get popular. The light emitting module includes, for example, a substrate having an insulating layer on the surface, a metal reflective layer partially laminated on a surface of the substrate (ie, a surface of the insulating layer); a plurality of LED wafers 'mounted on the reflective layer; and a sealing member The reflective layer and the plurality of LED chips are sealed on the surface of the substrate and have light transmissivity. For example, the insulating layer on the surface of the substrate is formed by reacting an epoxy (ep〇xy) resin with a hardener. The reflective layer is provided individually for each LED wafer, or one for the entire mounting area of the plurality of LED chips, and has a silver plating layer on the surface. The plurality of LEDs are blue LEDs that emit blue light. The sealing member is mixed with the glare body in the gas permeable poly (Wa) resin to emit yellow light which is excited by the flash light and emits a complementary color relationship. [Prior Art Document] [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2008-277561 No. 20123326. In the above-mentioned prior art light-emitting module, the splitting of the blue light emitted from the LED chip is incident on the non-reflection The surface of the insulating layer of the layer. Further, the hardener of the epoxy resin is decomposed and vaporized by the action of blue light. Further, the organic gas passes through the sealing member to react with the silver on the surface of the reflective layer. Thereby, the surface of the reflective layer becomes black with time, and the reflectance of light decreases at any time. This phenomenon will continue until no more gas is evolved from the insulating layer. Therefore, it has been desired to develop an illumination module capable of maintaining luminous intensity for a long period of time and an illumination device incorporating such a light-emitting module. SUMMARY OF THE INVENTION In a light-emitting module according to an embodiment, a reflective layer made of a metal is laminated on a substrate including a polyimide layer, and a light-emitting element is mounted on the reflective layer via a eutectic solder. [Embodiment] Hereinafter, embodiments will be described in detail with reference to the drawings. In Fig. 1, 'as an example of an illumination device incorporating the light-emitting module of the embodiment' shows an external view of the LED lamp 1A. Further, in Fig. 2, a cross-sectional view showing the LED lamp 1A of Fig. 1 cut along the axis is shown. The LED lamp 100 includes a main body 1 2, an insulating member 111, a base 115, a lighting device 121, a light-emitting module 1, and a cover 161. In the LED lamp 100, for example, the base 115 is screwed to a socket (not shown), and the illuminating cover 161 is attached in a downward posture, and the socket is attached to the ceiling. That is, in Fig. 1 'Fig. 2, the LED lamp 100 is illustrated in a state in which the mounting state is reversed up and down. The body 102 contains aluminum having a relatively high thermal conductivity. As shown in Fig. 2, at the upper end of the figure of the 201232261 body 102, a module fixing table 103 for mounting the light-emitting module 设有 is provided. Further, around the module fixing base 103, an annular cover attaching convex portion 1〇4 is integrally protruded from the upper end of the main body. Further, on the lower end side of the body 102, a concave portion 105 which is recessed toward the upper side of the figure is provided. Further, inside the body 102, a threading hole 1〇6 extending in the axial direction thereof is formed. The upper end of the threaded hole 1〇6 is opened at the upper end surface of the body 1〇2, and the lower end of the threaded hole 106 is opened at the bottom surface of the recess 1〇5. Further, a groove portion 1? 6a formed in a laterally curved manner is provided "continuously at the upper end of the threading hole 6 and along the back surface of the module fixing table 1"3. Further, on the outer circumference of the body 102, a plurality of fins 1〇7 are integrally provided. As shown in Fig. 1, the plurality of heat radiating fins 〇7 are bent and extended so as to expand outward toward the upper end of the body 102. The plurality of heat dissipation fins 107 are provided to dissipate heat generated from the light-emitting module 1 to the outside of the LED lamp 1 (). The insulating member 111 is formed in a bottomed cylindrical shape as shown in the cross section of Fig. 2 . Further, the insulating member 111 integrally has an annular insulating convex portion 112 projecting from the outer peripheral surface thereof in the intermediate portion in the height direction. Further, the insulating member 111 is housed and disposed in the recess 105 so that the bottom wall 111a contacts the bottom surface of the recess 1〇5 and the insulating projection 112 is engaged with the edge of the opening of the recess 1〇5. That is, the outer surface of the insulating member 1U is in close contact with and contacts the inner surface of the recess 105. The portion of the insulating member 111 that is closer to the lower side than the insulating convex portion 112 protrudes toward the lower side of the figure than the lower end of the body of the figure 102. In other words, only the portion of the insulating member 111 that is closer to the upper portion of the figure than the insulating convex portion 112 is inserted 201233261

入本體102的凹部105内。而且，於絕緣構件⑴的底壁 Ilia上，設有通孔114 ’該通孔114胁將上述穿線孔6 的圖示下端連通於絕緣構件U1的内部。 燈頭115如圖2所*，具有在包含絕緣材料的大致圓 板狀的基底（base) 116上安裝有燈頭本體117以及孔眼 (eyelet)端子118的構造。本實施形態的燈頭115為腿 型的燈頭。燈頭115為以基底116塞住絕緣構件！n的開 口之方式，覆蓋於絕緣構件U1的上述下側部分而安裝。 於燈頭本體m上縣有螺麟，賴麟螺合於未圖示 的電源侧的燈座。 點燈裝置121如圖2所示，收容配置於絕緣構件⑴ 的内侧。赌錢121是於電路基板122上安裝變壓器 (transformer)^ ( condenser) . t 3¾ ^ (transistor) 的電路零件123而形成。該點燈裝置121電性連接於燈 頭115。用於該電性連接的連接構件124如圖2所例示。 該連接構件！24電性連接孔眼端子118與電路基板122。 而且’點燈裝置121經由穿過穿線孔6 (溝部购） 的^圖不的絕緣包覆電線而電性連接於後賴發光模組 :’點燈裝置121經由燈頭115來對發光模組i供給 1 罩161如圖1所形成為大致半球形狀。照日> v萤- ：3透光性的合成樹脂。如圖2所示，該照明罩16 =覆盍I光模組i的發光側的方式，嵌合於自本體ι〇2白 圖不上端突出設置的罩安裝凸部⑽而安裝著。即，自辱 6 201233261t 光模，i發㈣光經由該卿罩16l而被麟照明光。 邻位ίϊΓ觸罩安裝凸部刚於沿著其周方向的多個 雜/、有未圖示的L字狀的安裝溝。另—方面，於昭明罩 =i合t外1 ’於與罩安褒凸部1〇4的多個安裝溝對 心，置，分別設有未圖示的多個卡止凸部。 即，照明罩161藉由將其卡止凸部扣掛於罩安裝凸部 104的各安裝溝而安裝於本體102。再者，於照明罩161 的緣部，如圖1以及圖2所示，設有用於遮蓋上述安裝溝 及卡止凸部的遮蓋環162。 一以下’參照圖3至圖5來詳細說明第i實施形態的發 光模組1。 於圖3中表示自光的導出側（以下，稱作表面側）來 觀察發光模組1的平關，於圖4巾表示該發賴組i的 模組基板3的平面圖，於圖5中表示以圖3的線朽-朽將 該發光模組1切斷的剖面圖。該發光模組丨具有板上晶片 (chip on board，COB )型的構造。 本實施形態的發光模組1包括：模組基板5 (圖4)、 發光元件21、接合線（bonding Wire) 23、端部接合線24、 框構件25以及密封構件28。於模組基板5表面具有金屬 製的反射層U、正極側的供電導體12以及負極側的供電 導體13;多個（於本實施形態中為12個）發光元件u排 列配置於反射層U的表面；接合線23用於在每列來串聯 連接該些多個發光元件21 ;端部接合線24用於對各列= 多個發光元件21進行供電；框構件25包圍密封區域；密 201233261 tv 封構件28填充於該框構件25的密封用孔25a内。 模組基板5例如圖4所示，形成為大致四邊形。該模 組基板5例如較佳為具有金屬基底基板，以提高各發光元 件21的散熱性。本實施形態的模組基板5如圖5所示，於 金屬製的基底板6的表面具有積層有比該基底板6薄的絕 緣層7的構造。 基底板6例如包含紹或銘合金。絕緣層7包含電絕緣 性的聚醯亞胺。作為聚醯亞胺製的絕緣層7，例如可使用 UPILEX-S (商品名）、Kapton (商品名）或Apical (商品 名）等。 該聚醯亞胺製的絕緣層7不含如環氧樹脂的硬化劑中 所έ的本盼（phenol)系樹脂或胺（amjne )系樹脂，因此 即使有來自發光元件21的光入射，亦幾乎不存在因光解而 氣化的分解成分。而且，聚醯亞胺製的絕緣層7的耐熱性 (500°C以上）亦優異。再者，該絕緣層7構成模組基板5 的安裝面。 作為模組基板5，除此以外，例如還可使用包含聚醯 亞胺的單層的聚醯亞胺基板、於鋁以外的金屬板上積層有 聚醯亞胺層的金屬基底基板等。無論如何，只要構成發光 元件21的安裝面的模組基板5的表層包含聚醯亞胺即可。 s亥模組基板5如圖5所示，緊貼於上述模組固定台 的表面103a而固定。因此，模組基板5具有用於安裝於模 組固定台103的4個切口部5a。即，模組基板5藉由將未 圖不的4根螺絲穿過4個切口部5a並螺合於模組固定台 201233261 103的未圖示的螺絲孔，從而緊貼於本體1〇2而安裝。 模組固定台103為金屬製，且如上所述般緊貼於本體 1〇2的上表面而固定。因此’當發光模組i的多個發光元 件21點燈而發光模組1發熱時，該熱將經由模組固 103而傳遞至本體1〇2。 σ 反射層11以及供電導體12、供電導體13均於模組其 板5的絕緣層7的表面被圖案化（patterning)。如圖4 ς 不，反射層11佔據絕緣層7的中央部而設置成四邊形， 電導體12、供電導體13於反射層U _近，例如以夾著 反射層11的方式而分別配設於反射層u的長度方向兩 側。換言之，在反射層11與其兩侧的供電導體12、供 導體13之間’分別形成有使絕緣層7的表面露田長 間隙（gap)。 '' ^ 如此’供電導體12、供電導體13在反射層u為單一 的情況下，以夾著該反射層U的方式而設於其兩側。而 且，在反射層η為多個的情況下，供電導體12、供 體η以爽著該些反射層群的方式而設於其兩侧。即'反 層η亦可對應於每健光元件21而分锻置。該些反射 層η或供電導體12、供電導體13較佳為具有金屬製的表 層部位’該金屬製的表層部位財比絕緣層7高的反 藉此，可與反射層11同_成供電導體12、供電導 體13，並且該供電導體12、供電導體13亦與反射層u 射光，因此可雜相對於密封構件以的密封面 積的金屬製的反射部位（即，反射層u及供電導體u、 201233261 • V ^ ^ ^ 供電導體13)的佔有面積為更大，從而可進—步提高光束 維持率。 而且，於絕緣層7的表面，亦圖案化有2個供電端子 14、供電端子15。—個供電端子14經由未圖示的導電構 件而連接於正極側的供電導體12，另一個供電端子15經 由未圖示的導電構件而連接於負極侧的供電導體丨3。並 且供電化子14、供電端子15經由未圖示的絕緣包覆電 線而連接於點燈裝置121的電路基板122。 即，將發光模組1與點燈裝置121予以連接的未圖示 的絕緣包覆電線自發光模組1的供電端子14、供電端子15 開始延伸，經由溝部l〇6a穿過穿線孔106，並連接於點燈 裳置121的電路基板122。再者，該些反射層a、供電導 體12、供電導體13以及供電端子14、供電端子15是同時 形成。 於絕緣層7的表面所設的反射層11、供電導體12、供 電導體13以及供電端子14、供電端子15均形成為基底層 A、中間層B、表層C的三層構造。基底層a是藉由將Cu (銅）貼合於模組基板5的絕緣層7的整個面並接合之後， 藉由蝕刻（etching)去除多餘部分而設置。而且，中間層 B是藉由將Ni (錄）鏟敷於基底層A的表面上而設置。進 而，表層C是藉由將Ag (銀）無電解鍍敷於中間層b的 表面上而設置。 如此，藉由無電解鐘敷來形成表層C，從而可簡化發 光模組1的製造步驟，並可降低製造成本（cost)。與此相 201233261^ 麻田曰由f錢來形成表層C時，必須於反射層u的表 曰ί、電辜體12、供電導體13的表層c以及供電端子 叙図=電端子15的表層c分別設置鍍敷引線。因此，鍍 敷圖案將變得複雜，並且需要在鍍敷後去除引線的步驟， ，：步驟變得複雜化。於無電解鍍敷時，不需要此種鍍敷 引線。 道触如此’由於表層C包含Ag，因此反射層11以及供電 -12、供t導體13的反料將高於絕緣層7的反光率。 包含銀的表層C的全光線反射率例如為90.0%。作為反光 率比絕f層7高的表層C的材料，除了 Ag以外，有金、 鎳銘等2者，反射層^並不限於上述的三層構造，亦 可包含反光率比絕緣層7高的金屬的單層。 而且，較佳為，反射層U、供電導體12、 辭14、供輯子15巾的至少反射㈣的表 == 造度Ra為〇.2以下。如此，藉由使反射層㈣ 表面的線姆度Ra小’可減少表面的凸凹，從而可減小 曝露於後述的有機氣體中的反射層丨丨的表面積。藉此，可 抑制反射層Η的表面變黑的現象，從而可抑制反射日 降。 多個發光元件21排列配置於反射層u的表面 ^形態的發光元件21為LED(發光二極體）的裸晶片（_ c ip)。S亥裸晶片例如是利用小塊切割機（出u 切割半導體晶圓（wafer)而形成為大致長方體的晶片，上 述半導體晶®是在藍寳石（sap_e) f的半導體基板上形 11 201233261.f 成有氮化物系化合物半導體（例如氮化鎵系化合物半導 體）。 而且’該裸晶片是於其上表面如圖3所示般具有2個 元件電極21a的單面電極型的晶片。如此所形成的發光元 件21的各元件電極21a的大小為縱〇·5 mm、橫 0.25 mm。 對於各發光元件21 ’例如使用包含發出藍色光的LED的 發光元件21，以使發光部發出白色系的光。 該發光元件21是藉由使順向的電流流經半導體的p_n 接面部分而發光。即，該發光元件21將電能直接轉換為 光因而，與藉由通電來使燈絲（fiiament)高溫白熾，並 利用其熱輻射來放射出可見光的白熾燈泡相比，該發光元 件21具有節能效果。 一如圖5所示，各發光元件21使用共晶焊料22，將; 半導體基板的背面麟JU定於反射層u的表層c上。$ 共晶焊料22而言’代紐的是Au基焊料，例如亦可使;It enters the recess 105 of the body 102. Further, a through hole 114' is formed in the bottom wall Ilia of the insulating member (1). The through hole 114 communicates the lower end of the threaded hole 6 with the inside of the insulating member U1. As shown in Fig. 2, the base 115 has a structure in which a base body 117 and an eyelet terminal 118 are attached to a substantially disk-shaped base 116 including an insulating material. The base 115 of the present embodiment is a leg-shaped base. The base 115 is for blocking the insulating member with the base 116! The opening of n is attached to the lower side portion of the insulating member U1 and mounted. On the main body of the lamp cap, there is a snail in the county, and the lyon is screwed to a lamp holder on the power supply side not shown. As shown in FIG. 2, the lighting device 121 is housed and disposed inside the insulating member (1). The gambling money 121 is formed by mounting a circuit component 123 of a transformer (converter) t 33⁄4 ^ (transistor) on the circuit board 122. The lighting device 121 is electrically connected to the lamp cap 115. The connecting member 124 for this electrical connection is illustrated in FIG. The connecting member! 24 is electrically connected to the eyelet terminal 118 and the circuit board 122. Further, the 'lighting device 121 is electrically connected to the rear lighting module via the insulated covered electric wire that passes through the threading hole 6 (purchase portion): the lighting device 121 passes the lamp cap 115 to the light emitting module i. The supply 1 cover 161 is formed in a substantially hemispherical shape as shown in Fig. 1 . Photo by day > v firefly - : 3 light transmissive synthetic resin. As shown in Fig. 2, the illuminating cover 16 is attached to the illuminating side of the I-light module i, and is fitted to the hood mounting convex portion (10) which is protruded from the upper end of the main body 白2 white drawing. That is, insulting 6 201233261t light mode, i hair (four) light is illuminated by the lining through the hood 16l. The adjacent ϊΓ ϊΓ 安装 安装 安装 凸 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 On the other hand, a plurality of locking projections (not shown) are provided in the center of the plurality of mounting grooves of the cover projections 1 and 4, respectively. That is, the illumination cover 161 is attached to the main body 102 by hooking the locking projections to the respective attachment grooves of the cover attachment convex portion 104. Further, as shown in Figs. 1 and 2, a cover ring 162 for covering the mounting groove and the locking projection is provided at the edge of the illumination cover 161. The light-emitting module 1 of the i-th embodiment will be described in detail with reference to Figs. 3 to 5 . FIG. 3 shows a view of the light-emitting module 1 from the light-extracting side (hereinafter referred to as the front side), and FIG. 4 shows a plan view of the module substrate 3 of the set i, in FIG. A cross-sectional view in which the light-emitting module 1 is cut by the line of FIG. 3 is shown. The light emitting module has a chip on board (COB) type configuration. The light-emitting module 1 of the present embodiment includes a module substrate 5 (FIG. 4), a light-emitting element 21, a bonding wire 23, an end bonding wire 24, a frame member 25, and a sealing member 28. On the surface of the module substrate 5, there are a metal reflective layer U, a positive electrode side power supply conductor 12, and a negative electrode side power supply conductor 13; and a plurality of (12 in the present embodiment) light emitting elements u are arranged in the reflective layer U. a surface; a bonding wire 23 for connecting the plurality of light-emitting elements 21 in series in each column; an end bonding wire 24 for supplying power to each column = a plurality of light-emitting elements 21; a frame member 25 surrounding the sealing region; and a dense 201233261 tv The sealing member 28 is filled in the sealing hole 25a of the frame member 25. The module substrate 5 is formed in a substantially quadrangular shape as shown, for example, in FIG. The mold substrate 5 preferably has, for example, a metal base substrate to improve heat dissipation of each of the light-emitting elements 21. As shown in Fig. 5, the module substrate 5 of the present embodiment has a structure in which an insulating layer 7 which is thinner than the base plate 6 is laminated on the surface of the base plate 6 made of metal. The base plate 6 contains, for example, a sinter alloy. The insulating layer 7 contains an electrically insulating polyimide. As the insulating layer 7 made of polyimide, for example, UPILEX-S (trade name), Kapton (trade name), or Apical (trade name) can be used. The insulating layer 7 made of the polyimide does not contain a phenol resin or an amjne resin as a hardener in an epoxy resin, and therefore even if light from the light-emitting element 21 is incident, There is almost no decomposition component that is vaporized by photolysis. Further, the insulating layer 7 made of polyimide is also excellent in heat resistance (500 ° C or higher). Furthermore, the insulating layer 7 constitutes a mounting surface of the module substrate 5. As the module substrate 5, for example, a single-layer polyimide substrate comprising polyimine, a metal base substrate having a polyimide layer laminated on a metal plate other than aluminum, or the like can be used. In any case, the surface layer of the module substrate 5 constituting the mounting surface of the light-emitting element 21 may contain polyimine. As shown in Fig. 5, the s-chip module substrate 5 is fixed to the surface 103a of the module fixing table. Therefore, the module substrate 5 has four slit portions 5a for attachment to the mold set fixing table 103. In other words, the module substrate 5 is closely attached to the main body 1〇2 by passing four unillustrated screws through the four cutout portions 5a and screwing them to screw holes (not shown) of the module fixing base 201233261 103. installation. The module fixing base 103 is made of metal and is fixed to the upper surface of the main body 1〇2 as described above. Therefore, when the plurality of light-emitting elements 21 of the light-emitting module i are lit and the light-emitting module 1 is heated, the heat is transmitted to the body 1〇2 via the module 103. The σ reflective layer 11, the power supply conductor 12, and the power supply conductor 13 are all patterned on the surface of the insulating layer 7 of the module 5 of the module. 4, the reflective layer 11 occupies a central portion of the insulating layer 7 and is provided in a quadrangular shape, and the electrical conductor 12 and the power supply conductor 13 are disposed adjacent to the reflective layer U_, for example, so as to sandwich the reflective layer 11 respectively. The length of the layer u is on both sides. In other words, a surface gap is formed between the reflective layer 11 and the power supply conductor 12 and the supply conductor 13 on both sides thereof so that the surface of the insulating layer 7 is exposed. When the reflection layer u is single, the power supply conductor 12 and the power supply conductor 13 are provided on both sides thereof so as to sandwich the reflection layer U. Further, when there are a plurality of reflective layers η, the power supply conductor 12 and the donor η are provided on both sides of the reflective layer group so as to be cool. That is, the 'reverse layer η can also be divided and forged corresponding to each of the light-guiding elements 21. Preferably, the reflective layer η, the power supply conductor 12, and the power supply conductor 13 have a surface portion of the metal portion. The surface portion of the metal layer is higher than the insulating layer 7 and can be formed as a power supply conductor with the reflective layer 11. 12. The power supply conductor 13 is provided, and the power supply conductor 12 and the power supply conductor 13 are also incident on the reflective layer u. Therefore, the reflective portion of the metal (ie, the reflective layer u and the power supply conductor u, which can be sealed with respect to the sealing area of the sealing member) 201233261 • V ^ ^ ^ The power supply conductor 13) has a larger occupied area, so that the beam maintenance rate can be further improved. Further, on the surface of the insulating layer 7, two power supply terminals 14 and power supply terminals 15 are also patterned. One of the power supply terminals 14 is connected to the power supply conductor 12 on the positive electrode side via a conductive member (not shown), and the other power supply terminal 15 is connected to the power supply conductor 3 on the negative electrode side via a conductive member (not shown). Further, the power supply unit 14 and the power supply terminal 15 are connected to the circuit board 122 of the lighting device 121 via an insulating coated wire (not shown). In other words, the insulated covered electric wire (not shown) that connects the light-emitting module 1 and the lighting device 121 extends from the power supply terminal 14 and the power supply terminal 15 of the light-emitting module 1, and passes through the threading hole 106 via the groove portion 16a. And connected to the circuit board 122 of the lighting device 121. Further, the reflection layer a, the power supply conductor 12, the power supply conductor 13, the power supply terminal 14, and the power supply terminal 15 are simultaneously formed. The reflective layer 11, the power supply conductor 12, the power supply conductor 13, the power supply terminal 14, and the power supply terminal 15 provided on the surface of the insulating layer 7 are each formed in a three-layer structure of the base layer A, the intermediate layer B, and the surface layer C. The base layer a is provided by bonding Cu (copper) to the entire surface of the insulating layer 7 of the module substrate 5 and bonding them, and then removing the excess portion by etching. Further, the intermediate layer B is provided by applying a Ni (recording) to the surface of the base layer A. Further, the surface layer C is provided by electroless plating of Ag (silver) on the surface of the intermediate layer b. Thus, the surface layer C is formed by the electroless clock, so that the manufacturing steps of the light-emitting module 1 can be simplified, and the manufacturing cost can be reduced. In the case of the formation of the surface layer C, the surface layer C of the reflection layer u, the surface layer c of the power supply conductor 13, and the surface layer c of the power supply terminal = the electrical terminal 15 respectively Set the plating leads. Therefore, the plating pattern will become complicated, and the step of removing the leads after plating is required, the steps become complicated. This plating lead is not required for electroless plating. Since the surface layer C contains Ag, the reflection layer 11 and the power supply -12, the counter material for the t conductor 13 will be higher than the light reflection rate of the insulating layer 7. The total light reflectance of the surface layer C containing silver is, for example, 90.0%. The material of the surface layer C having a higher light reflectance than the insulating layer 7 includes gold, nickel, and the like in addition to Ag. The reflective layer is not limited to the above-described three-layer structure, and may include a higher reflectance than the insulating layer 7. Single layer of metal. Further, it is preferable that the reflectance layer U of the reflection layer U, the power supply conductor 12, the word 14 and the cover 15 is at least 2 degrees. Thus, by making the surface roughness Ra of the surface of the reflective layer (4) small, the surface unevenness can be reduced, whereby the surface area of the reflective layer 曝 exposed to the organic gas to be described later can be reduced. Thereby, the phenomenon that the surface of the reflective layer 变 is blackened can be suppressed, and the reflection fall can be suppressed. The plurality of light-emitting elements 21 are arranged side by side on the surface of the reflective layer u. The light-emitting element 21 in the form of a light-emitting element 21 is an LED (light-emitting diode) bare chip (_c ip). The S-ray bare wafer is, for example, a wafer formed into a substantially rectangular parallelepiped by a small-cutting machine that cuts a semiconductor wafer, and the above-mentioned semiconductor crystal® is formed on a semiconductor substrate of sapphire (sap_e) f. 201233261.f A nitride-based compound semiconductor (for example, a gallium nitride-based compound semiconductor) is formed. Further, the bare wafer is a one-sided electrode type wafer having two element electrodes 21a on its upper surface as shown in Fig. 3. The size of each element electrode 21a of the light-emitting element 21 is 〇5 mm and 0.25 mm horizontal. For each light-emitting element 21', for example, a light-emitting element 21 including an LED that emits blue light is used, so that the light-emitting portion emits white light. The light-emitting element 21 emits light by flowing a forward current through a p_n junction portion of the semiconductor. That is, the light-emitting element 21 directly converts electrical energy into light, thereby making the filament high-temperature incandescent by energization. And using the thermal radiation to emit visible light, the light-emitting element 21 has an energy-saving effect. As shown in FIG. 5, each of the light-emitting elements 21 uses a eutectic solder 22; Lin back surface of the conductor substrate JU scheduled on the reflective layer of the surface layer c $ u eutectic solder 22 in terms of 'New Generation of an Au-based solder, for example, can make.;

Au (金）-Sn (錫）系的共晶焊料。該Au_Sn系共晶焊与 22的共晶溫度為約32〇。(：。 .忒些發光元#21如圖3所示，縱橫排列地安裝於模矣 jit °即’由以沿反射層11的長度方向延伸的方式17 個發光元件21來形成第1發光元件列〜第 接的里在該列所延伸的方向上_ 發先7L件21的異極的元件電極彼此，即，一個 疋21的正極側的元件電極叫與另一個發光元件2 12 201233261 ^Fif 而元件電極仏利用包含Au製的細線的接合線 而連，者。藉此’各個發光树列所具有的多個（ 電性:聯連接。因此，該些1列發光元件21 在逋電狀態下一齊發光。 ，於將各列的兩端的發光元件21連接於供電導體 ㈣1電導體13的端部接合線24亦為Au製的金屬細線， …難以傳遞。因此’各列的兩端的發光元件η的熱 以順著端部接合線24而移動（逃逸）至供電導體12:、佴 ，導體13。藉此，可使反射層u的各部分的溫度分布變 付均勻’㈣可抑制反㈣U上搭載❹個發統件Μ 的溫度差。 而且，如上所述，各列的發光元件21分別經由端部接 合線24而相對於供電導體12、供電導體13並聯連接著。 因此，即使第1發光元件列〜第3發光元件列中的任一列 發光元件21有時因接合不良等原因而無法再發光，亦不會 出現發光模組1整體無法發光的情況。 曰 框構件25例如是將合成樹脂形成為矩形框狀的構 件，且黏結於模組基板5的表面而固定。該框構件25具有 包圍所有發光元件21的大小的矩形的密封用孔25a。該密 封用孔25a包圍整個反射層η以及供電導體I?、供電導 體13的一部分。即，該密封用孔25a對填充後述的密封構 件28的密封區域的大小進行規定。 更詳細而言，如圖3所示，密封用孔25a具有包圍所 有發光元件2卜所有接合線23以及所有端部接合線24的 13 201233261 大小 如圃5所示，框構件25的厚度， 定Γ藉由密封構件28來埋設該些所42la 域，小相當於密封耗25_# =于區 積稱作密封面積）。 卜將該面 =所示’於在圖中上下夾著反射層11的位晉，八 別覆蓋模組基板5的表面的光_ (resist)’ Ϊ 阻=26。該些光阻劑層％分別具有例如用於二2 電^ 14、供電端子15等露出至外部的孔。 返ί、 也封構件28被填充在密封用孔25 二'供_13、多個發光元件== 3 «及多根端部接合線24。該密封構件μ是由^ ϋ 的透紐合賴脂製作，例如由透日錄魏樹月: 2 =:規密4軸^ 内左入規疋量’隨後被加熱硬化。 ㈣構件28中’適量混合有未圖示的螢統。該榮 又X、，元件21發出的光激發，而放射出與發光元件 21毛出的光的顏色為不同色的光。於本實施形態中，發光 =件21為發出藍色光的LED晶>|，因此對於螢光體使用 黃色榮光體’以可作為發光模組1而出射白色光，所述黃 色^光體放射出與藍色光存在補色關係的黃色系的光。如 此混合有螢光體的密封構件28的螢光體會發光，因此填 埋密封用孔25a的密封構件28整體作為發光模組丨的發光 部而發揮功能。 201233261 當將上述構造的發光模組1裝入LED燈loo内並經由 點燈裝置121而通電時，由密封構件28覆蓋的多個發光元 件21齊發出藍色光，混入密封構件28中的黃色螢光體 受到激發而發出黃色光。即，密封構件28作為出射白色光 的面狀光源來發揮功能，所述白色光是將藍色光及黃色光 混合而成。 、 ^此時，反射層11作為對多個發光元件21發出的熱進 行擴散的散熱片（heatspreader;>來發揮功能，並且作為對 各發光元件21放射出的光中的朝向模組基板5的光進行反 射的反射鏡來發揮功能。而且，位於密封區域内的供電導 體12、供電導體13亦與反射層U同樣地，作為散熱片來 發揮功能，並且亦作為反射鏡來發揮功能。 即，來自各發光元件21的熱經由反射層u、模組基 板5、模組固定台1〇3、本體1〇2的上表面以及散熱轉片 1〇7而散發至LED燈100的外部。而且，被反射層u反 射的光以及經密封構件28擴散後被供電導體ΐ2、θ供電導 體13反射的光是與自密封構件28直接放出的主要的光一 同’經由照明罩161而被用作照明光。 反射層11以及供電導體12、供電導體13如圖3所示， ，覆蓋密封區域25a (密封面積）的大致整個面的面積而Au (gold)-Sn (tin) eutectic solder. The Eu_Sn-based eutectic solder has a eutectic temperature of about 32 Å. (1: The illuminating elements #21 are mounted on the mold jit °, that is, 'the light-emitting elements 21 extending in the longitudinal direction of the reflective layer 11 to form the first light-emitting elements, as shown in FIG. In the direction in which the column extends, the element electrodes of the different poles of the first 7L piece 21 are mutually mutually, that is, the element electrode of the positive electrode side of one turn 21 is called another light emitting element 2 12 201233261 ^Fif Further, the element electrodes are connected by a bonding wire including a thin wire made of Au, whereby a plurality of the respective light-emitting tree rows are provided (electrical: connected in series. Therefore, the one-column light-emitting elements 21 are in a power-on state. The next light-emitting element is connected to the light-emitting element 21 at each end of each column. The end bonding wire 24 of the first electrical conductor 13 is also a thin metal wire made of Au, which is difficult to transmit. Therefore, the light-emitting elements at both ends of each column The heat of η moves (escapes) along the end bonding wires 24 to the power supply conductors 12:, 佴, and the conductors 13. Thereby, the temperature distribution of the respective portions of the reflective layer u can be made uniform. (4) The anti-(four) U can be suppressed. It is equipped with a temperature difference of one hair piece 。. As described above, the light-emitting elements 21 of the respective rows are connected in parallel to the power supply conductor 12 and the power supply conductor 13 via the end bonding wires 24. Therefore, even one of the first to third light-emitting element columns is illuminated. The element 21 may not be able to emit light due to poor bonding or the like, and the entire light-emitting module 1 may not emit light. The frame member 25 is, for example, a member in which a synthetic resin is formed into a rectangular frame shape, and is bonded to the module. The frame member 25 has a rectangular sealing hole 25a surrounding the size of all the light-emitting elements 21. The sealing hole 25a surrounds the entire reflective layer η, the power supply conductor I, and a part of the power supply conductor 13. The sealing hole 25a defines the size of the sealing region filling the sealing member 28 to be described later. More specifically, as shown in FIG. 3, the sealing hole 25a has all the bonding wires 23 and all the ends surrounding all the light-emitting elements 2 13 201233261 of the part bonding wire 24 is as shown in FIG. 5, and the thickness of the frame member 25 is fixed by the sealing member 28 to embed the 42a domain, which is equivalent to the sealing cost 25_# = The product is referred to as the sealing area. The surface of the module substrate 5 is covered with light _(resist) 26 resistance = 26 in the figure. Each of the photoresist layers % has a hole exposed to the outside, for example, for the two-electrode terminal 14, the power supply terminal 15, and the like. The sealing member 28 is also filled in the sealing hole 25 for ''13, a plurality of Light-emitting element == 3 «and a plurality of end joint wires 24. The sealing member μ is made of 透 透 纽 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The amount 'cured' is then hardened by heat. (4) In the member 28, an appropriate amount of the fluorescing system (not shown) is mixed. This radiance X is excited by the light emitted from the element 21, and emits light of a different color from the light emitted from the light-emitting element 21. In the present embodiment, the light-emitting element 21 is an LED crystal that emits blue light. Therefore, a yellow luminescent body is used for the phosphor to emit white light as the light-emitting module 1, and the yellow light is emitted. A yellow light with a complementary color to the blue light. Since the phosphor of the sealing member 28 in which the phosphor is mixed emits light, the entire sealing member 28 that fills the sealing hole 25a functions as a light-emitting portion of the light-emitting module. 201233261 When the light-emitting module 1 of the above configuration is incorporated in the LED lamp loo and energized via the lighting device 121, the plurality of light-emitting elements 21 covered by the sealing member 28 emit blue light, and the yellow fluorescent light mixed in the sealing member 28 The light body is excited to emit yellow light. That is, the sealing member 28 functions as a planar light source that emits white light by mixing blue light and yellow light. At this time, the reflective layer 11 functions as a heat sink for diffusing heat generated by the plurality of light-emitting elements 21, and serves as a module substrate 5 as light emitted from each of the light-emitting elements 21. The light-conducting reflector 12 functions in the same manner as the reflective layer U, and also functions as a heat sink, and also functions as a mirror. The heat from each of the light-emitting elements 21 is radiated to the outside of the LED lamp 100 via the reflective layer u, the module substrate 5, the module fixing table 1〇3, the upper surface of the body 1〇2, and the heat-dissipating fins 1〇7. The light reflected by the reflection layer u and the light reflected by the supply member conductor 2 and the θ power supply conductor 13 after being diffused by the sealing member 28 are used together with the main light directly discharged from the sealing member 28 to be used as illumination through the illumination cover 161. As shown in FIG. 3, the reflective layer 11, the power supply conductor 12, and the power supply conductor 13 cover the area of substantially the entire surface of the sealing region 25a (sealing area).

认置如此，藉由增大對光進行反射的金屬層11、Η、U 所佔的比例，可提高光的反射率，從而可提高發光模組i 的發光效率。 相反地，未設有反射層U以及供電導體12、供電導 201233261f 體13的絕緣層7的表面所露出的部位與該些金屬層^、 n、i3相比，糾反射率較低。換言之，自㈣元件21 放射的光的-部分人射至該絕緣層7露出的部位。本實施 形態的發光元件2!為發域色光的LED晶片，因此 色光主要入射至絕緣層7露出的部位。 μ 在使模組基板5的絕緣層7如先前般包含環氧樹脂的 情況下’硬化劑中所含的苯紛系樹脂將在藍色光的作用下 分解而氣化。然而，本實施形態的絕緣層7包含聚醯亞胺， 因此即使錢色光人射’錢料存在因鑛^產生的有 機氣體。 因此，根據本實施形態，幾乎不存在自絕緣層7產生 的有機氣體透過密封構件28而與反射層u或供電導 12、供電導體13的表層C的銀發生反應的情二= 擔心該些金屬層U、丨2、Π的表面隨時間變黑。因而，根 據本實施形態，可提供-種能夠長期維持充分的發光強度 的發光模組1。 而且，聚醯亞胺製的絕緣層7為耐熱性優異的有機材 料，因此可使用共晶焊料22來將多個發光元件21連接於 反射層11上。如上所述，聚醯亞胺製的絕緣層7具有超過 500°C的耐熱溫度。而且’共晶焊料22的共晶溫度為32(η： 左右。因此，即便使用共晶焊料22來將發光元件21安裝 於模組基板5，絕緣層7的特性亦不會發生變化。 如此’當使用共晶焊料22來安裝多個發光元件21時， 可將自發光元件21產生的熱良好地傳遞至模組基板5，從 201233261.By recognizing this, by increasing the ratio of the metal layers 11, Η, and U reflecting light, the reflectance of light can be increased, and the luminous efficiency of the light-emitting module i can be improved. On the contrary, the portion where the surface of the insulating layer 7 which is not provided with the reflection layer U and the power supply conductor 12 and the power supply conductor 1313 is exposed is lower than the metal layers ^, n, i3. In other words, a portion of the light emitted from the (four) element 21 is incident on the exposed portion of the insulating layer 7. Since the light-emitting element 2 of the present embodiment is an LED chip having a color-emitting color, the color light is mainly incident on a portion where the insulating layer 7 is exposed. μ When the insulating layer 7 of the module substrate 5 contains an epoxy resin as before, the benzene-based resin contained in the curing agent is decomposed and vaporized by the action of blue light. However, since the insulating layer 7 of the present embodiment contains polyimine, even if there is an organic gas generated by the minerals, there is a money. Therefore, according to the present embodiment, almost no organic gas generated from the insulating layer 7 passes through the sealing member 28 and reacts with the silver of the reflective layer u or the power supply conductor 12 and the surface layer C of the power supply conductor 13 = fear of the metal The surfaces of layers U, 丨2, Π blacken over time. Therefore, according to the present embodiment, it is possible to provide the light-emitting module 1 capable of maintaining sufficient luminous intensity for a long period of time. Further, since the insulating layer 7 made of polyimide is an organic material excellent in heat resistance, the eutectic solder 22 can be used to connect the plurality of light-emitting elements 21 to the reflective layer 11. As described above, the insulating layer 7 made of polyimide has a heat-resistant temperature exceeding 500 °C. Further, the eutectic temperature of the eutectic solder 22 is 32 (n: about. Therefore, even if the eutectic solder 22 is used to mount the light-emitting element 21 on the module substrate 5, the characteristics of the insulating layer 7 do not change. When the eutectic solder 22 is used to mount the plurality of light-emitting elements 21, the heat generated by the self-luminous elements 21 can be well transferred to the module substrate 5, from 201233261.

的發光元件21的散熱性°藉此，可使發光模組1 加從而可提供高輸出的發光模組卜 沾接、Α、中表示對第2實施形態的發光模組30的主要部分 曰片^進订局部放大的剖面圖。該發光模組30除了將LED 射層11 (發光元件）以覆晶（flip chip)的方式安裝於反 女以外具有與上述的第1實施形態的發光模組1 倾，?的構造。因而，此處，對於與第1實施形態的發 其，:說=樣地發揮功能的構成元件標註相同符號並省略 #田Ϊ該發光模組3〇的製造過程甲，多個LED晶片32 f二曰曰曰焊料22而安裝於模組基板5。此時，將塗佈有共 、；斗2並載置有晶片的模組基板5配置於未圖示的爐 抬^熱至共晶溫度為止。藉此，共晶焊料22熔融而將凸 鬼（bump) 34黏結於反射層n。 此處省略圖示的模組基板5的配線圖案例如是對且有 聚酿=胺層的DCB基板_層騎_㈣成。並且， Z晶片32的凸塊34經由共晶焊料22而連接於該配線 圖案。 如上所述，根據本實施形態，除了可起到與上述的第 1 態同樣的效果以外，藉由使用表面具；聚醯亞胺 層7的模組基板5，可借助共晶焊料22來實現LED曰 32的倒裝晶片安裝，可進—步提高LED晶片u相對=模 組基板5的導熱性，從而可提高安裝的可靠性。 上述的實施方式僅為麻，並不意_限定發明的範 17 201233261 圍。該實施形態能以其他的各種形態來實施， 明的主旨的範圍内，可進行各種省略、替換j在不脫離發 施形態或其變形包含在發明的範圍或主旨内1變更。該實 申請專利範圍所揭示的發明及其均等的範園内同樣包含在 【圖式簡單說明】 内。 圖1是表示實施形態的LED燈的外觀立體 圖2是沿著軸線將圖1的LED燈切斷 _ ° 圖3疋從光的導出側來觀察裝入圖1的Led 光模組的平面圖。 且中的發 圖4疋表不圖3的發光模組的模組基板的平面圖。 圖5疋以線F5-F5將圖3的發光模組切斷的剖面圖。 圖6是對另一實施形態的發光模組的主要部分進行局 部放大的剖面圖。 【主要元件符號說明】 1 :發光模組 5:模組基板 5a :切口部 6 : 基底板 7 ： 絕緣層 11 .反射層 12 、U :供電導體 14 、15 :供電端子 21 :發光元件 21a :元件電極 18 201233261 22 :共晶焊料 23 :接合線 24 :端部接合線 25 :框構件 25a :密封用孔 26 :光阻劑層 28 :密封構件 30 :發光模組 32 : LED晶片 34 :凸塊 100 : LED 燈 102 :本體 103 :模組固定台 103a :表面 104 :罩安裝凸部 105 :凹部 106 :穿線孔 106a :溝部 107 :散熱鰭片 111 :絕緣構件 111a :絕緣構件的底壁 112 :絕緣凸部 114 :通孔 115 :燈頭 19 201233261^ 116 :基底 117 :燈頭本體 118 :孔眼端子 121 :點燈裝置 122 :電路基板 123 :電路零件 124 :連接構件 161 :照明罩 162 :遮蓋環 A :基底層 B :中間層 C :表層 F5 :線 20The heat dissipation property of the light-emitting element 21 is such that the light-emitting module 1 can be added to provide a high-output light-emitting module, and the main portion of the light-emitting module 30 of the second embodiment is shown. ^Submit a partially enlarged cross-sectional view. The light-emitting module 30 has a structure in which the LED radiation layer 11 (light-emitting element) is attached to the light-emitting module 1 of the above-described first embodiment in a flip chip manner. Therefore, in the first embodiment, the constituent elements that function as the same are denoted by the same reference numerals, and the manufacturing process of the light-emitting module 3A is omitted. The plurality of LED chips 32 f The solder 22 is mounted on the module substrate 5. At this time, the module substrate 5 coated with the hopper 2 and placed on the wafer is placed in a furnace (not shown) to heat up to the eutectic temperature. Thereby, the eutectic solder 22 is melted to bond the bump 34 to the reflective layer n. The wiring pattern of the module substrate 5, which is omitted here, is, for example, a DCB substrate_layer riding of the poly-aluminum layer. Further, the bump 34 of the Z wafer 32 is connected to the wiring pattern via the eutectic solder 22. As described above, according to the present embodiment, the module substrate 5 of the polyimide layer 7 can be realized by the eutectic solder 22 by using the surface tool and the same effect as the first aspect described above. The flip chip mounting of the LED 曰32 can further improve the thermal conductivity of the LED wafer u relative to the module substrate 5, thereby improving the reliability of the mounting. The above-described embodiment is only hemp, and is not intended to limit the scope of the invention. The embodiment can be implemented in various other forms, and various modifications and changes may be made without departing from the scope of the invention or the scope of the invention. The invention disclosed in the scope of the patent application and the scope of the same are also included in the description of the drawings. Fig. 1 is a perspective view showing the appearance of an LED lamp according to an embodiment. Fig. 2 is a plan view showing the LED lamp of Fig. 1 taken along the axis from the direction on which the LED lamp of Fig. 1 is cut. Figure 4 is a plan view showing the module substrate of the light-emitting module of Figure 3. Figure 5 is a cross-sectional view showing the light-emitting module of Figure 3 cut along line F5-F5. Fig. 6 is a partially enlarged cross-sectional view showing a main portion of a light-emitting module according to another embodiment. [Description of main component symbols] 1 : Light-emitting module 5: Module substrate 5a: Notched portion 6: Base plate 7: Insulating layer 11. Reflecting layer 12, U: Power supply conductors 14, 15: Power supply terminal 21: Light-emitting element 21a: Element electrode 18 201233261 22 : eutectic solder 23 : bonding wire 24 : end bonding wire 25 : frame member 25 a : sealing hole 26 : photoresist layer 28 : sealing member 30 : light emitting module 32 : LED wafer 34 : convex Block 100: LED lamp 102: body 103: module fixing table 103a: surface 104: cover mounting protrusion 105: recess 106: threading hole 106a: groove portion 107: heat dissipation fin 111: insulating member 111a: bottom wall 112 of insulating member : Insulation convex portion 114 : through hole 115 : lamp cap 19 201233261 ^ 116 : base 117 : base body 118 : eyelet terminal 121 : lighting device 122 : circuit substrate 123 : circuit component 124 : connecting member 161 : lighting cover 162 : cover ring A: base layer B: intermediate layer C: surface layer F5: line 20

Claims (1)

201233261 七、申請專利範圍： ι·—種發光模組，包括： 基板，包含聚醯亞胺層； 金屬製的反射層，積層於上述基板上 ;以及 心光元件，經由共晶焊料而安裝於上述反射層上。 2’如申印專利範圍第丨項所述之發光模組，其中 上述反射層包含銀。 3. 如申請專利範圍第丨項或第2項所述之發光模組， 其中上述發光元件經由上述共晶焊料而以覆晶方式安裝於 上述反射層上。 4. 一種照明設備，包括如申請專利範圍第丨項至第3 項中任一項所述之發光模組。 21201233261 VII. Patent application scope: ι·—Light-emitting module, comprising: a substrate comprising a polyimide layer; a reflective layer made of metal laminated on the substrate; and a cardiac component mounted on the eutectic solder Above the reflective layer. The light-emitting module of claim 2, wherein the reflective layer comprises silver. 3. The light-emitting module according to claim 2, wherein the light-emitting element is flip-chip mounted on the reflective layer via the eutectic solder. A lighting device comprising the lighting module according to any one of the preceding claims. twenty one
TW100139111A 2010-10-29 2011-10-27 Light emitting module and lighting equipment TWI445465B (en)

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JP6332933B2 (en) * 2013-10-01 2018-05-30 三菱電機株式会社 Manufacturing method of light emitting unit
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