WO2015151918A1 - Light-emitting diode module - Google Patents
Light-emitting diode module Download PDFInfo
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- WO2015151918A1 WO2015151918A1 PCT/JP2015/058843 JP2015058843W WO2015151918A1 WO 2015151918 A1 WO2015151918 A1 WO 2015151918A1 JP 2015058843 W JP2015058843 W JP 2015058843W WO 2015151918 A1 WO2015151918 A1 WO 2015151918A1
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Abstract
In a light-emitting diode module (1), a plurality of light-emitting diode elements (2) are disposed atop a copper substrate (3). A reflective plate (5) is attached to a predetermined region α on top of the copper substrate (3) so as to adhere entirely thereto. On the reflective plate (5), the light-emitting diode elements (2) are mounted in an electrically insulated state. A titanium oxide thin film (7) is formed by means of vacuum deposition onto the entire surface of the side of the reflective plate (5) onto which the plurality of light-emitting diode elements (2) are secured. Atop the copper substrate (3), the plurality of light-emitting diode elements (2) are enclosed along with the reflective plate (5) by a light transmission resin that includes a fluorescent material.
Description
本発明は、複数の発光ダイオード素子を１枚の基板上に集積するように近接して所定の位置に設置してなる、発光ダイオードモジュールに関する。特に、本発明は、比較的出力電力の大きい大光量の発光ダイオード式照明器具の光源に適する発光ダイオードモジュールに関する。
The present invention relates to a light-emitting diode module in which a plurality of light-emitting diode elements are disposed in close proximity to each other so as to be integrated on a single substrate. In particular, the present invention relates to a light emitting diode module suitable for a light source of a light emitting diode type lighting apparatus having a relatively large output power and a large light amount.
発光ダイオードの技術の進歩に伴い、より高い照度が要求される照明の光源に発光ダイオードが利用されるようになってきている。しかしながら、より大光量の発光ダイオード式投光器を実現するためには、これまでのようなヒートシンクによる放熱効率の向上と反射板による光の取出し効率の向上、および発光ダイオード素子自体の発光効率の向上だけでは十分ではない。
With the advancement of light emitting diode technology, light emitting diodes have come to be used as illumination light sources that require higher illuminance. However, in order to realize a light emitting diode type projector with a larger amount of light, only the improvement of the heat dissipation efficiency by the heat sink and the improvement of the light extraction efficiency by the reflector and the improvement of the light emission efficiency of the light emitting diode element itself are achieved. Is not enough.
反射する特性を有する材料でなる微粉末を混入した光の拡散層、または光を反射する反射層を設けることで、発光効率を向上させることができる。
Luminous efficiency can be improved by providing a light diffusing layer mixed with fine powder made of a material having a reflecting property or a reflecting layer that reflects light.
特許文献１および特許文献２は、発光ダイオードを取り付ける基板に光の反射層を形成する方法を開示している。特許文献３は、半導体パッケージの側壁の内面に光の反射皮膜を形成する方法を開示している。特許文献４は、半導体パッケージの透光部位に光拡散材を適量混入する方法を開示している。
Patent Document 1 and Patent Document 2 disclose a method of forming a light reflection layer on a substrate to which a light emitting diode is attached. Patent Document 3 discloses a method of forming a light reflecting film on the inner surface of the side wall of a semiconductor package. Patent Document 4 discloses a method of mixing an appropriate amount of a light diffusing material into a light transmitting part of a semiconductor package.
本発明の目的は、放熱効果と耐久性能の低下を十分に抑えて、光の取出し効率をより高くすることができる改良された発光ダイオードモジュールを提供することである。他の目的や本発明の利点は、後に続く説明において述べられている。
An object of the present invention is to provide an improved light-emitting diode module that can sufficiently suppress a decrease in heat dissipation effect and durability and can increase the light extraction efficiency. Other objects and advantages of the present invention are set forth in the description that follows.
本発明は、銅基板（３）と、銅基板（３）の上の所定の領域（α）の所定の位置に設置される複数の発光ダイオード素子（２）と、発光ダイオード素子（２）の光のうち銅基板（３）の方向に向かう光を反射させる反射板（５）と、反射板（５）の反射面側の表面全面に設けられる真空蒸着によって形成される酸化チタン薄膜（７）と、蛍光体を含む光透過性樹脂によって反射板（５）と共に複数の発光ダイオード素子（２）を銅基板（３）の上で封入するパッケージ（１１）とを含むことを特徴とする。
The present invention includes a copper substrate (3), a plurality of light emitting diode elements (2) installed at predetermined positions in a predetermined region (α) on the copper substrate (3), and a light emitting diode element (2). A reflecting plate (5) that reflects light traveling in the direction of the copper substrate (3) of the light, and a titanium oxide thin film (7) formed by vacuum deposition provided on the entire surface of the reflecting plate (5) on the reflecting surface side. And a package (11) in which a plurality of light-emitting diode elements (2) are encapsulated on a copper substrate (3) together with a reflector (5) by a light-transmitting resin containing a phosphor.
本発明の発光ダイオードモジュールは、基板側に向かう可視光の反射率をより高くして光の取出し効率を向上させ、また光源の周囲の温度の上昇が抑制させることができる。その結果、本発明の発光ダイオードモジュールは、多くの発光ダイオード素子を１枚の基板上に集積するように近接して配置し１つの光源を形成することができ、照度を向上させることができる。
The light emitting diode module of the present invention can increase the reflectance of visible light toward the substrate side to improve the light extraction efficiency, and can suppress an increase in the temperature around the light source. As a result, the light emitting diode module of the present invention can arrange many light emitting diode elements close to each other so as to be integrated on one substrate to form one light source, and can improve illuminance.
図１は、本発明の発光ダイオードモジュールの適する実施の形態を示す。図１は、実施の形態の発光ダイオードモジュールの縦断面を模式的に示す。図１は、基本的に全ての重要な部位を図面に示すために、各部位の大きさを正確に反映していない。図２は、図１に示す実施の形態の発光ダイオードモジュールの外観を示す。図２は、光源の出力電力が３６０Ｗの発光ダイオード式投光器に適用することを想定して設計されている実施の形態の発光ダイオードモジュールを示す。以下に、図に示される実施の形態のモジュールの構成を具体的に説明する。
FIG. 1 shows a suitable embodiment of the light emitting diode module of the present invention. FIG. 1 schematically shows a longitudinal section of a light emitting diode module according to an embodiment. FIG. 1 does not accurately reflect the size of each part in order to show basically all important parts in the drawing. FIG. 2 shows an appearance of the light emitting diode module according to the embodiment shown in FIG. FIG. 2 shows a light-emitting diode module according to an embodiment designed to be applied to a light-emitting diode projector having an output power of a light source of 360 W. The configuration of the module according to the embodiment shown in the drawings will be specifically described below.
実施の形態の発光ダイオードモジュール１では、複数の発光ダイオード素子２（２Ａ，２Ｂ，２Ｃ）が銅基板３の上の所定の領域αに所定の間隔Ｌで並べて配置されている。図１に示される発光ダイオード素子２は、サファイアの絶縁基板の上に各半導体層と電極を積層したよく知られている一般的な構成を有する。したがって、実施の形態の発光ダイオードモジュール１は、チップオンボード（ＣＯＢ，Ｃｈｉｐ Ｏｎ Ｂｏａｒｄ）の構造を有する。
In the light emitting diode module 1 according to the embodiment, a plurality of light emitting diode elements 2 (2A, 2B, 2C) are arranged in a predetermined region α on the copper substrate 3 at a predetermined interval L. The light-emitting diode element 2 shown in FIG. 1 has a well-known general configuration in which each semiconductor layer and an electrode are stacked on a sapphire insulating substrate. Therefore, the light emitting diode module 1 according to the embodiment has a chip-on-board (COB, Chip | On Board) structure.
複数の発光ダイオード素子２（２Ａ，２Ｂ，２Ｃ）は、見掛け上、１つの光源１０になるような長さＬの間隔で配置される。図１に示される実施の形態の発光ダイオードモジュール１では、全ての発光ダイオード素子２が等間隔で所定の位置に設置されている。発光ダイオード素子２の平面形状によって、各発光ダイオード素子２の縦方向の配列における間隔と、横方向の配列における間隔が異なることがある。
The plurality of light emitting diode elements 2 (2A, 2B, 2C) are arranged at intervals of a length L so as to become one light source 10 in appearance. In the light emitting diode module 1 of the embodiment shown in FIG. 1, all the light emitting diode elements 2 are installed at predetermined positions at equal intervals. Depending on the planar shape of the light emitting diode elements 2, the interval in the vertical arrangement of the light emitting diode elements 2 and the interval in the horizontal arrangement may be different.
図２に示される実施の形態の発光ダイオードモジュール１では、７０ｍｍ×１００ｍｍの銅基板３の上の所定の領域αに４００個のチップ型発光ダイオード素子２が所定の位置に設置されている。電気的には、数個の発光ダイオード素子２を直列に接続した直列回路がそれぞれ並列に接続されている。
In the light emitting diode module 1 of the embodiment shown in FIG. 2, 400 chip light emitting diode elements 2 are installed at predetermined positions in a predetermined area α on a 70 mm × 100 mm copper substrate 3. Electrically, series circuits in which several light emitting diode elements 2 are connected in series are connected in parallel.
銅基板３の発光面側の表面には、銅基板３を腐蝕から保護するための金属鍍金が施されている。以下の説明では、銅基板３の発光ダイオード素子２が取り付けられる側の面を発光面として、発光面の反対側の面を非発光面という。金属鍍金で形成される鍍金層４は、銅基板３の発光面における少なくとも所定の領域α以外の表面に均一に設けられる。実施の形態の発光ダイオードモジュール１では、銅基板３の発光面側の表面全面に鍍金層４が設けられている。
A metal plating for protecting the copper substrate 3 from corrosion is applied to the surface on the light emitting surface side of the copper substrate 3. In the following description, the surface of the copper substrate 3 on which the light emitting diode element 2 is attached is referred to as a light emitting surface, and the surface opposite to the light emitting surface is referred to as a non-light emitting surface. The plating layer 4 formed by metal plating is provided uniformly on at least a surface other than the predetermined region α on the light emitting surface of the copper substrate 3. In the light emitting diode module 1 of the embodiment, the plating layer 4 is provided on the entire surface of the copper substrate 3 on the light emitting surface side.
鍍金層４の鍍金材料は、ニッケルである。鍍金層４は、電気鍍金法によって形成されている。実施の形態のニッケル鍍金層４の鍍金厚は、約２０μｍである。鍍金層４の鍍金材料は、ニッケル以外に銅基板３の保護に有効である銅に対する鍍金性能が高い金属が適用できるが、発光ダイオードモジュール１が比較的光量の大きい光源１０を形成することを想定しているので、熱伝導性が良好な金属が選択される。
The plating material of the plating layer 4 is nickel. The plating layer 4 is formed by an electric plating method. The plating thickness of the nickel plating layer 4 of the embodiment is about 20 μm. As the plating material for the plating layer 4, a metal having high plating performance against copper, which is effective for protecting the copper substrate 3, can be used in addition to nickel, but it is assumed that the light emitting diode module 1 forms the light source 10 having a relatively large light amount. Therefore, a metal with good thermal conductivity is selected.
反射板５は、発光ダイオード素子２の光のうち銅基板２の方向に向かう光を正規の照射方向に反射させる。以下の説明では、反射板５の発光ダイオード素子２が取り付けられる側の面を反射面として、反射面の反対側の面を非反射面という。反射板５は、銅基板３の発光面側の所定の領域αに全面が密着するように取り付けられて固着される。反射板５の反射面側の表面上には、複数の発光ダイオード素子２が設置され、電気絶縁状態で取り付けられる。
The reflecting plate 5 reflects light traveling in the direction of the copper substrate 2 out of the light emitted from the light emitting diode element 2 in the normal irradiation direction. In the following description, the surface of the reflecting plate 5 on which the light emitting diode element 2 is attached is referred to as a reflecting surface, and the surface opposite to the reflecting surface is referred to as a non-reflecting surface. The reflecting plate 5 is attached and fixed so that the entire surface is in close contact with a predetermined region α on the light emitting surface side of the copper substrate 3. A plurality of light emitting diode elements 2 are installed on the reflecting surface side surface of the reflecting plate 5 and are attached in an electrically insulated state.
反射板５の材質は、９０％以上の反射率を達成できる材料が選択される。また、発光ダイオードモジュール１が比較的光量の大きい光源１０を形成し得ることを想定しているので、反射板５の材質は、熱伝導性が比較的良好である材料が選択される。
As the material of the reflector 5, a material that can achieve a reflectance of 90% or more is selected. In addition, since it is assumed that the light emitting diode module 1 can form the light source 10 having a relatively large amount of light, a material having relatively good thermal conductivity is selected as the material of the reflecting plate 5.
実施の形態の発光ダイオードモジュール１における反射板５は、アルミニウム板である。後記の酸化チタン薄膜７との関係で、アルミニウム反射板５が適当である。反射板５の可視光の反射率を向上させるために、アルミニウム反射板５の反射面側の表面全面に真空蒸着によってアルミニウムまたは銀の粒子を均一に付着させるようにすることができる。
The reflecting plate 5 in the light emitting diode module 1 of the embodiment is an aluminum plate. The aluminum reflector 5 is appropriate in relation to the titanium oxide thin film 7 described later. In order to improve the reflectivity of visible light of the reflecting plate 5, aluminum or silver particles can be uniformly adhered to the entire surface of the reflecting surface of the aluminum reflecting plate 5 by vacuum deposition.
アルミニウム反射板５は、銅基板３の表面に形成されているニッケル鍍金層４を介在させて、比較的高い熱伝導率を有するアルミニウムの微粉末を適量混入したシリコンペースト６によって接着されている。銅基板３と反射板５の間が、アルミニウムの微粉末を含む柔軟なシリコンペースト６によって隙間なく密着されていることは、銅基板３と反射板５との間の接触面積を最大にして、可能な限り高い熱伝導性を付与する。
The aluminum reflector 5 is bonded by a silicon paste 6 mixed with an appropriate amount of fine aluminum powder having a relatively high thermal conductivity with a nickel plating layer 4 formed on the surface of the copper substrate 3 interposed therebetween. The fact that the copper substrate 3 and the reflector 5 are in close contact with the flexible silicon paste 6 containing fine aluminum powder maximizes the contact area between the copper substrate 3 and the reflector 5. Provide as high a thermal conductivity as possible.
ニッケル鍍金層４は、熱伝導率がそれほど高くはない。しかしながら、ニッケルは、少なくとも熱絶縁性の材料ではなく、鍍金厚が十数μｍ程度であることから、光源１０の放熱効果にそれほど重要な影響を与えない。ただし、鍍金層４は、銅基板３の発光面側で、シリコンペースト６を介在させて反射板５と密接する所定の領域αにおいては、限定的に取り除かれることができる。銅基板３がアルミニウム反射板５と直接接触することによって、僅かであっても熱伝導率をより高くすることが期待できる。
The nickel plating layer 4 is not so high in thermal conductivity. However, since nickel is not at least a heat insulating material and has a plating thickness of about several tens of μm, it does not significantly affect the heat dissipation effect of the light source 10. However, the plating layer 4 can be removed in a limited manner in a predetermined region α on the light emitting surface side of the copper substrate 3 and in close contact with the reflecting plate 5 with the silicon paste 6 interposed therebetween. When the copper substrate 3 is in direct contact with the aluminum reflecting plate 5, it can be expected that the thermal conductivity is further increased even if it is slight.
柔軟なシリコンペースト６は、銅基板３とアルミニウム反射板５との間の熱膨張差を吸収する。比較的基板の表面積が大きい実施の形態の発光ダイオードモジュール１において、柔軟なシリコンペースト６は、７０℃に達する可能性がある銅基板３とアルミニウム反射板５の熱変位にともなう銅基板３との間の接着の崩壊、あるいは発光ダイオードモジュール１の変形を防ぐことができる。
The flexible silicon paste 6 absorbs the difference in thermal expansion between the copper substrate 3 and the aluminum reflector 5. In the light emitting diode module 1 of the embodiment having a relatively large surface area of the substrate, the flexible silicon paste 6 is formed between the copper substrate 3 that can reach 70 ° C. and the copper substrate 3 due to the thermal displacement of the aluminum reflector 5. It is possible to prevent the adhesion between them from being broken or the light emitting diode module 1 from being deformed.
アルミニウム反射板５の反射面側の表面全面に、真空蒸着によって形成される酸化チタン薄膜７が設けられる。真空蒸着による酸化チタン薄膜７の膜厚は、基本的に粒子レベルに近い薄さであって、数百ｎｍから数μｍである。したがって、酸化チタン薄膜７は、微視的にアルミニウム反射板５を被覆しておらず、アルミニウム反射板５の反射面側の表面を実質的に透過させる。したがって、真空蒸着による酸化チタン薄膜７は、アルミニウム反射板５の可視光を反射させる作用を失わせない。
A titanium oxide thin film 7 formed by vacuum deposition is provided on the entire surface of the aluminum reflecting plate 5 on the reflecting surface side. The film thickness of the titanium oxide thin film 7 by vacuum deposition is basically a thinness close to the particle level, and is several hundred nm to several μm. Accordingly, the titanium oxide thin film 7 does not microscopically cover the aluminum reflecting plate 5 and substantially transmits the surface on the reflecting surface side of the aluminum reflecting plate 5. Therefore, the titanium oxide thin film 7 formed by vacuum deposition does not lose the function of reflecting the visible light of the aluminum reflector 5.
真空蒸着による酸化チタン薄膜７を有するアルミニウム反射板５は、高い反射率で銅基板３の方向に進行する可視光を正規の照射方向に反射させる。発光ダイオード素子２が発する光の波長は、約４００ｎｍ－８００ｎｍであるが、アルミニウム反射板５は、約７００ｎｍ－８００ｎｍの特定の波長の光を高い反射率で反射させることができない。酸化チタン薄膜７は、アルミニウム反射板５で十分に反射させることができない特定の波長の光を散乱させる。その結果、反射板５の全体としては、最大９７％の高い反射率を得ることができる。
The aluminum reflector 5 having the titanium oxide thin film 7 formed by vacuum deposition reflects visible light traveling in the direction of the copper substrate 3 with high reflectivity in the normal irradiation direction. The wavelength of light emitted from the light-emitting diode element 2 is about 400 nm to 800 nm, but the aluminum reflector 5 cannot reflect light having a specific wavelength of about 700 nm to 800 nm with high reflectance. The titanium oxide thin film 7 scatters light of a specific wavelength that cannot be sufficiently reflected by the aluminum reflector 5. As a result, the reflection plate 5 as a whole can obtain a high reflectance of 97% at the maximum.
図１に示されるように、複数の発光ダイオード素子２（２Ａ，２Ｂ，２Ｃ）は、アルミニウム反射板５を介在させて銅基板３の上の所定の領域αに設置されている。各発光ダイオード素子２は、アルミニウム反射板５の上にダイボンディングによって固着される。ボンディング材８を被覆層と見做すと、ボンディング材８は、銅基板３および反射板５に対して電気的に絶縁する材料であることが望ましい。ボンディング材８は、例えば、エポキシ樹脂のような熱絶縁性の熱硬化樹脂を適用することができる。
As shown in FIG. 1, the plurality of light emitting diode elements 2 (2 </ b> A, 2 </ b> B, 2 </ b> C) are installed in a predetermined region α on the copper substrate 3 with an aluminum reflecting plate 5 interposed therebetween. Each light emitting diode element 2 is fixed on the aluminum reflector 5 by die bonding. When the bonding material 8 is regarded as a coating layer, the bonding material 8 is preferably a material that is electrically insulated from the copper substrate 3 and the reflection plate 5. For the bonding material 8, for example, a heat insulating thermosetting resin such as an epoxy resin can be applied.
すでに説明されているように、発光ダイオード素子２は、チップ型の構成を有し、絶縁性のサファイア基板の上に各層と電極が積層されている。そのため、仮にボンディング材８が導線性を有していたとしても、発光ダイオード素子２と銅基板３および反射板５との間は、電気的に絶縁されている。
As already described, the light-emitting diode element 2 has a chip-type configuration, and each layer and an electrode are stacked on an insulating sapphire substrate. Therefore, even if the bonding material 8 has a conductive property, the light emitting diode element 2 and the copper substrate 3 and the reflection plate 5 are electrically insulated.
そのため、ボンディング材８は、電気的絶縁性を有する材料であることがより安全であるものの、厳密に電気的絶縁性が求められるものではない。ゆえに、ボンディング材８に熱伝導性を有する微粉末を混入したり、熱伝導性を優先する物質を選択することができる。とりわけ、より発熱量が多い大光量の光源１０を形成する場合には、同時に可能な限り高い放熱効果を得るために、可能な範囲で熱伝導性を有する接着剤で発光ダイオード素子２をアルミニウム反射板５に固定することが望ましい。
Therefore, although it is safer that the bonding material 8 is a material having electrical insulation, the electrical insulation is not strictly required. Therefore, a fine powder having thermal conductivity can be mixed in the bonding material 8 or a material giving priority to thermal conductivity can be selected. In particular, when forming the light source 10 with a large amount of heat and a large amount of heat generation, the light-emitting diode element 2 is reflected on the aluminum with an adhesive having thermal conductivity as much as possible in order to obtain the highest possible heat dissipation effect. It is desirable to fix to the plate 5.
銅基板３の発光面側において、アルミニウム反射板５が設けられる所定の領域αの外側の表面上には、ポリイミドやポリエステルでなるフレキシブル配線基板９が貼り付けられる。フレキシブル配線基板９には、予め複数の発光ダイオード素子２にそれぞれ電流を供給するのに適する配線がプリントされている。
On the light emitting surface side of the copper substrate 3, a flexible wiring substrate 9 made of polyimide or polyester is attached on the outer surface of the predetermined region α where the aluminum reflector 5 is provided. Wiring suitable for supplying current to the plurality of light emitting diode elements 2 is printed on the flexible wiring board 9 in advance.
実施の形態の発光ダイオードモジュール１では、図２に示されるように、図示しないアルミニウムのヒートシンクに銅基板３を取り付ける基板取付部位の周辺において、鍍金層４が設けられている銅基板３の発光面側の表面が部分的に露出されている。銅基板３の発光面側の表面が部分的に露出されているのは、投光器の本体器具に光源１０として発光ダイオードモジュール１をより簡単に取付固定するためである。ただし、発光ダイオードモジュール１における発光面は、太陽光を直接受ける可能性があるので、銅基板３を敢えて露出させなくてもよい。
In the light emitting diode module 1 according to the embodiment, as shown in FIG. 2, the light emitting surface of the copper substrate 3 provided with the plating layer 4 around the substrate mounting portion where the copper substrate 3 is attached to an aluminum heat sink (not shown). The side surface is partially exposed. The surface on the light emitting surface side of the copper substrate 3 is partially exposed in order to more easily attach and fix the light emitting diode module 1 as the light source 10 to the main body of the projector. However, since the light emitting surface of the light emitting diode module 1 may receive sunlight directly, the copper substrate 3 does not have to be exposed.
図２に示されるように、銅基板３の発光面側の表面における所定の領域αの上に設置される全ての発光ダイオード素子２は、ベースに相当するアルミニウム反射板５と共に蛍光体を含む光透過性樹脂からなる透過部位１３によって１個のパッケージ１１の中に封入される。全ての発光ダイオード素子２を収容するパッケージ１１は、本質的に外枠のみで構成される。外枠は、フレキシブル配線基板９の上に設けられる。見掛け上、発光ダイオードモジュール１は、１つの光源１０を形成する。
As shown in FIG. 2, all the light emitting diode elements 2 installed on a predetermined region α on the surface of the copper substrate 3 on the light emitting surface side, together with the aluminum reflecting plate 5 corresponding to the base, include light containing a phosphor. It is enclosed in one package 11 by a permeable portion 13 made of a permeable resin. The package 11 that accommodates all the light emitting diode elements 2 is essentially composed only of the outer frame. The outer frame is provided on the flexible wiring board 9. Apparently, the light emitting diode module 1 forms one light source 10.
各発光ダイオード素子２では、ワイヤボンディングによって金線または銅線でなる導線１２による配線が施される。導線１２は、パッケージ１１の中においてフレキシブル配線基板９のプリント配線と接続する。導線１２は、アルミニウム反射板５と複数の発光ダイオード素子２（２Ａ，２Ｂ，２Ｃ）と共にパッケージ１１に収容される。
In each light emitting diode element 2, wiring by the conducting wire 12 made of gold wire or copper wire is performed by wire bonding. The conducting wire 12 is connected to the printed wiring of the flexible wiring board 9 in the package 11. The conducting wire 12 is accommodated in the package 11 together with the aluminum reflector 5 and the plurality of light emitting diode elements 2 (2A, 2B, 2C).
光透過性樹脂で形成される透光部位１３には、所望の光の色具合を考慮して適当な量の黄色の蛍光体が混合されている。実施の形態の発光ダイオードモジュールの透光部位１３は、シリコン樹脂にサイアロン系の蛍光体を混合してなる。そのため、図２に示される発光ダイオードモジュール１では、発光ダイオード素子２を発光させていないとき、外見上、光源１０の全体が黄色のように見える。
An appropriate amount of yellow phosphor is mixed in the light-transmitting portion 13 formed of the light-transmitting resin in consideration of the desired color of light. The light-transmitting portion 13 of the light-emitting diode module according to the embodiment is formed by mixing a sialon-based phosphor with silicon resin. Therefore, in the light emitting diode module 1 shown in FIG. 2, when the light emitting diode element 2 is not emitting light, the light source 10 as a whole looks yellow.
銅基板３は、例えば、図示しない多数の大きなフィンを有するアルミニウムのヒートシンクに取り付けられる。銅基板３とヒートシンクとの間にグラファイトシートのような高い熱伝導性を有する薄い弾性体を介在させて、銅基板３をヒートシンクに対して隙間なく密着させている。したがって、発光ダイオード素子２が発する光源１０の熱は、比較的短時間にヒートシンクに伝わって大気中に放熱される。
The copper substrate 3 is attached to, for example, an aluminum heat sink having a large number of large fins (not shown). A thin elastic body having high thermal conductivity such as a graphite sheet is interposed between the copper substrate 3 and the heat sink, and the copper substrate 3 is closely attached to the heat sink without any gap. Therefore, the heat of the light source 10 emitted from the light emitting diode element 2 is transmitted to the heat sink in a relatively short time and is radiated to the atmosphere.
本発明の発光ダイオードモジュールは、本発明の技術思想に反しない限り、実施の形態の発光ダイオードモジュールと同じ構成に限定されない。すでにいくつかの例が示されているが、変形したり、置換したり、あるいは他の発明と組み合わせて実施することが可能である。
The light emitting diode module of the present invention is not limited to the same configuration as the light emitting diode module of the embodiment unless it is contrary to the technical idea of the present invention. Some examples have already been shown, but can be modified, replaced, or implemented in combination with other inventions.
本発明は、発光ダイオード式照明器具、特に、大光量の発光ダイオード式照明器具に適用できる。本発明は、水銀灯式照明器具と同等の性能を発光ダイオード式照明器具に与えることが期待できる。本発明は、水銀灯照明器具に比べて消費電力が少なく有害物質を使用しない発光ダイオード式照明器具の普及を促進し、社会の発展に貢献する。
The present invention can be applied to a light-emitting diode type lighting fixture, in particular, a light-emitting diode type lighting fixture with a large light amount. The present invention can be expected to give a light emitting diode type lighting fixture the same performance as a mercury lamp type lighting fixture. The present invention promotes the spread of light-emitting diode type lighting fixtures that consume less power and do not use harmful substances compared to mercury lamp lighting fixtures, and contribute to the development of society.
１ 発光ダイオードモジュール
２ 発光ダイオード素子
３ 銅基板
４ 鍍金層
５ 反射板
６ シリコンペースト
７ 酸化チタン薄膜（真空蒸着膜）
８ ボンディング材
９ フレキシブル配線基板
１０ 光源
１１ パッケージ
１２ 導線
１３ 透過部位 DESCRIPTION OFSYMBOLS 1 Light emitting diode module 2 Light emitting diode element 3 Copper substrate 4 Metal plating layer 5 Reflecting plate 6 Silicon paste 7 Titanium oxide thin film (vacuum deposition film)
8Bonding material 9 Flexible wiring board 10 Light source 11 Package 12 Conductor 13 Transmission part
２ 発光ダイオード素子
３ 銅基板
４ 鍍金層
５ 反射板
６ シリコンペースト
７ 酸化チタン薄膜（真空蒸着膜）
８ ボンディング材
９ フレキシブル配線基板
１０ 光源
１１ パッケージ
１２ 導線
１３ 透過部位 DESCRIPTION OF
8
Claims (7)
- 銅基板と、前記銅基板の上の所定の領域に配設される複数の発光ダイオード素子と、前記銅基板の前記所定の領域に全面が密着するように取り付けられ前記複数の発光ダイオード素子を電気絶縁状態で固着し前記発光ダイオード素子の光のうち銅基板の方向に向かう光を反射させる反射板と、前記反射板の反射面側の表面全面に設けられる真空蒸着によって形成される酸化チタン薄膜と、を含んでなる発光ダイオードモジュール。 A copper substrate, a plurality of light emitting diode elements disposed in a predetermined region on the copper substrate, and the plurality of light emitting diode elements attached to the predetermined region of the copper substrate so as to be in close contact with each other. A reflective plate that is fixed in an insulating state and reflects light directed toward the copper substrate out of the light from the light-emitting diode element; and a titanium oxide thin film formed by vacuum deposition provided on the entire surface of the reflective surface of the reflective plate; A light emitting diode module comprising:
- 蛍光体を含む光透過性樹脂によって前記反射板と共に前記複数の発光ダイオード素子を前記銅基板の上で封入するパッケージを含んでなる請求項１に記載の発光ダイオードモジュール。 The light emitting diode module according to claim 1, further comprising a package that encloses the plurality of light emitting diode elements together with the reflecting plate on the copper substrate with a light transmissive resin including a phosphor.
- 前記反射板がアルミニウムでなる請求項１に記載の発光ダイオードモジュール。 The light emitting diode module according to claim 1, wherein the reflector is made of aluminum.
- アルミニウムでなる前記反射板の反射面側の表面全面に真空蒸着によってアルミニウム薄膜を形成したことを特徴とする請求項３に記載の発光ダイオードモジュール。 4. The light emitting diode module according to claim 3, wherein an aluminum thin film is formed by vacuum deposition on the entire surface of the reflecting plate made of aluminum on the reflecting surface side.
- 適量のアルミニウムの微粉末を混入したシリコンペーストによって前記反射板を前記銅基板に接着してなる請求項１に記載の発光ダイオードモジュール。 2. The light emitting diode module according to claim 1, wherein the reflector is adhered to the copper substrate with a silicon paste mixed with an appropriate amount of aluminum fine powder.
- 前記銅基板の少なくとも前記所定の領域以外に鍍金層を有する請求項１に記載の発光ダイオードモジュール。 The light emitting diode module according to claim 1, further comprising a plating layer other than at least the predetermined region of the copper substrate.
- 前記鍍金層は、ニッケル鍍金層である請求項６に記載の発光ダイオードモジュール。 The light emitting diode module according to claim 6, wherein the plating layer is a nickel plating layer.
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| JP2014-072970 | 2014-03-31 | ||
| JP2014072970A JP5859050B2 (en) | 2014-03-31 | 2014-03-31 | Light emitting diode module |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009119461A1 (en) * | 2008-03-26 | 2009-10-01 | 島根県 | Semiconductor light emitting module and method for manufacturing the same |
| WO2010113852A1 (en) * | 2009-03-31 | 2010-10-07 | 東芝ライテック株式会社 | Light-emitting device and illumination device |
| JP2011014890A (en) * | 2009-06-02 | 2011-01-20 | Mitsubishi Chemicals Corp | Metal substrate and light source device |
| JP2011044593A (en) * | 2009-08-21 | 2011-03-03 | Hitachi Chem Co Ltd | Led substrate and led package |
| JP2012109529A (en) * | 2010-09-16 | 2012-06-07 | Hitachi Cable Ltd | Substrate for mounting semiconductor light-emitting element, and semiconductor light-emitting device using the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4844506B2 (en) * | 2007-08-28 | 2011-12-28 | パナソニック電工株式会社 | Light emitting device |
| JP2013149683A (en) * | 2012-01-17 | 2013-08-01 | Nisshinbo Mechatronics Inc | Led light-emitting device and its manufacturing method, and led illumination device |
| JP2014033027A (en) * | 2012-08-01 | 2014-02-20 | Tss Kk | Chip-on-board substrate and method of manufacturing the same |
-
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009119461A1 (en) * | 2008-03-26 | 2009-10-01 | 島根県 | Semiconductor light emitting module and method for manufacturing the same |
| WO2010113852A1 (en) * | 2009-03-31 | 2010-10-07 | 東芝ライテック株式会社 | Light-emitting device and illumination device |
| JP2011014890A (en) * | 2009-06-02 | 2011-01-20 | Mitsubishi Chemicals Corp | Metal substrate and light source device |
| JP2011044593A (en) * | 2009-08-21 | 2011-03-03 | Hitachi Chem Co Ltd | Led substrate and led package |
| JP2012109529A (en) * | 2010-09-16 | 2012-06-07 | Hitachi Cable Ltd | Substrate for mounting semiconductor light-emitting element, and semiconductor light-emitting device using the same |
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| JP5859050B2 (en) | 2016-02-10 |
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