US20150041834A1 - Light-emitting diodes - Google Patents

Light-emitting diodes Download PDF

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Publication number
US20150041834A1
US20150041834A1 US14/515,802 US201414515802A US2015041834A1 US 20150041834 A1 US20150041834 A1 US 20150041834A1 US 201414515802 A US201414515802 A US 201414515802A US 2015041834 A1 US2015041834 A1 US 2015041834A1
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Prior art keywords
light
emitting diode
carrier
diode chips
reflective coating
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US14/515,802
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US9431378B2 (en
Inventor
Joachim Reill
Georg Bogner
Stefan Grötsch
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Osram Oled GmbH
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Osram Opto Semiconductors GmbH
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Publication of US9431378B2 publication Critical patent/US9431378B2/en
Assigned to OSRAM OLED GMBH reassignment OSRAM OLED GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OSRAM OPTO SEMICONDUCTORS GMBH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
    • H05K3/445—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits having insulated holes or insulated via connections through the metal core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10409—Screws

Definitions

  • This disclosure relates to light-emitting diodes.
  • WO 2006/012842 describes a light-emitting module.
  • light-emitting diodes including a carrier with a mounting face and including a metallic basic body and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips connect in parallel with one another, the at least two light-emitting diode chips are embedded in a reflective coating, the reflective coating covering the mounting face and side faces of the light-emitting diode chips, and the light-emitting diode chips protrude with their radiation exit surfaces out of the reflective coating and the radiation exit surfaces face away from the carrier.
  • light-emitting diodes including a carrier with a mounting face and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein the carrier includes a metallic basic body, an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips are connected in parallel with one another, the at least two light-emitting diode chips are embedded in a reflective coating, the reflective coating covers the mounting face and side faces of the light-emitting diode chips, and the reflective coating terminates flush with radiation exit surfaces of the light-emitting diode chips facing away from the carrier.
  • the carrier includes a metallic basic body, an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips are connected in parallel with one another, the at least two light-emitting diode chips are embedded in a reflective coating, the reflective coating covers the mounting face and side faces of the light-emitting diode chips, and the reflective coating terminate
  • light-emitting diodes including a carrier with a mounting face and at least two light-emitting diode chips affixed to the carrier at the mounting face
  • the carrier includes a metallic basic body
  • an outer face of the metallic basic body includes the mounting face
  • the at least two light-emitting diode chips are connected in parallel with one another
  • the mounting face is arranged on an upper side of the carrier
  • the light-emitting diode chips are directly affixed to the carrier at the mounting face
  • the light-emitting diode chips electrically conductively connect to the metallic basic body
  • the light-emitting diode chips connect in parallel with one another via the metallic basic body
  • an electrically insulating layer is affixed to the carrier on a lower side of the carrier, and the electrically insulating layer has a thermal conductivity of at least 2 W/(mK).
  • FIGS. 1 , 2 , 3 and 4 are schematic sectional illustrations showing examples of light-emitting diodes.
  • the light-emitting diodes may comprise a carrier.
  • the carrier may be in the form of a plate, for example. That is to say that the lateral extent of the carrier is great in comparison with its thickness.
  • the carrier has a mounting face provided to accommodate components of the light-emitting diode.
  • the light-emitting diode may comprise at least two light-emitting diode chips.
  • the light-emitting diode preferably comprises a large number of light-emitting diode chips, for example, four or more light-emitting diode chips.
  • the light-emitting diode chips of the light-emitting diode are provided for the purpose of generating electromagnetic radiation in the frequency band of infrared radiation to UV radiation during operation.
  • the light-emitting diode chips in this case represent the light sources of the light-emitting diode.
  • the light-emitting diode itself emits white light.
  • the at least two light-emitting diode chips may be affixed to the carrier at least indirectly at the mounting face. “At least indirectly” means that it is possible for there to be further material such as an intermediate carrier or a connector, for example, an adhesive or solder between the light-emitting diode chips and the mounting face.
  • the carrier may have a metallic basic body.
  • the metallic basic body then forms the main part of the carrier.
  • the metallic basic body accounts for at least 90% of the volume and at least 90% of the weight of the carrier.
  • the metallic basic body is formed with a metal with good electrical and thermal conductivity such as copper, for example.
  • the metallic basic body comprises an outer face comprising the mounting face of the carrier. That is to say that at least points of the outer face of the metallic basic body of the carrier form the mounting face, at which the at least two light-emitting diode chips are affixed at least indirectly to the carrier.
  • the at least two light-emitting diode chips preferably all of the light-emitting diode chips of the light-emitting diode, connect electrically in parallel with one another.
  • the light-emitting diode may comprise a carrier with a mounting face and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face.
  • the carrier comprises a metallic basic body which has an outer face which comprises the mounting face of the carrier.
  • the at least two light-emitting diode chips of the light-emitting diode are in this case connected in parallel with one another.
  • the light-emitting diode described here is based on the idea, inter alia, that the arrangement of the light-emitting diode chips of the light-emitting diode as close as possible to a metallic basic body enables particularly efficient spreading of the heat generated by the light-emitting diode chips during operation of the light-emitting diodes. That is to say that the heat generated by the light-emitting diode chips is distributed over the entire volume of the metallic basic body which forms a main part of the carrier as soon as possible after the generation of the heat.
  • the light-emitting diode may comprise at least one opening in the carrier.
  • the opening in this case extends from an upper side of the carrier to a lower side of the carrier, the lower side facing away from the upper side.
  • the opening extends from a top face of the carrier to a bottom face of the carrier.
  • the opening passes through the carrier preferably completely.
  • the opening can be in the form of a bore in the carrier, for example, or the opening is already provided during manufacture of the carrier.
  • the opening has an inner face in which the material of the carrier adjoins the opening. In this case, the inner face is covered by an electrically insulating material.
  • the entire inner face of the opening is coated with the electrically insulating material, with the result that there is no point within the opening at which material of the carrier is exposed.
  • the opening is used to accommodate a fixing device to mount the light-emitting diode.
  • the fixing device may be a screw or a locating pin for a press fit.
  • the electrically insulating material used to cover the inner face of the opening is, for example, an electrically insulating plastic or a layer formed by an electrically insulating material such as silicon dioxide or silicon nitride.
  • the electrically insulating material can be ceramic.
  • the electrically insulating material can contain a boron nitride or consist of a boron nitride, for example.
  • the electrically insulating material can cover the side face or the side faces of the opening completely in the form of a layer.
  • the electrically insulating material can be applied with a thickness of 30 gm to 100 gm, for example.
  • the light-emitting diode can comprise a plurality of openings, for example, two or more openings in the carrier. Each of the openings is then configured in the described manner and is used to accommodate a fixing device to mount the light-emitting diode at the intended use location.
  • the opening may pass through the metallic basic body completely. That is to say that the at least one opening is formed in the carrier in the region of the metallic basic body.
  • the inner face of the opening is then preferably covered completely by the electrically insulating material at least in the region of the metallic basic body. That is to say that the metallic basic body is not exposed at any point of the opening and can therefore be kept free of potential in a simple manner during operation of the light-emitting diode.
  • the mounting face of the carrier may be arranged on the upper side of the carrier and the light-emitting diode chips are affixed to the carrier directly at the mounting face.
  • the light-emitting diode chips are in this case soldered onto the carrier at the mounting face.
  • the light-emitting diode chips are applied directly to the metallic basic body of the carrier and in direct contact therewith, apart from a connector such as the solder, for example.
  • an electrically insulating layer is affixed to the carrier on the lower side of the carrier, i.e., on the side of the carrier which faces away from the mounting face.
  • the electrically insulating layer is preferably in direct contact with the metallic basic body.
  • the electrically insulating layer covers the carrier on its lower side preferably completely, apart from the openings. That is to say that the metallic basic body is then also covered completely by the electrically insulating layer on its side facing away from the mounting face.
  • the electrically insulating layer in this case has a thermal conductivity of at least 2 W/(mK).
  • the light-emitting diode chips are mounted directly on the metallic basic body which enables optimum thermal coupling of the light-emitting diode chips to the carrier.
  • the entire metallic basic body of the carrier acts as a heat-spreading element.
  • the light-emitting diode chips can be electrically conductively connected to the metallic basic body and connected in parallel with one another via the metallic basic body.
  • the electrical insulation of the metallic basic body is formed on the side facing away from the mounting face by the electrically insulating layer which is characterized by particularly high thermal conductivity.
  • the electrically insulating layer may be a ceramic layer. This means that the electrically insulating layer may have ceramic properties.
  • the electrically insulating layer can then contain a ceramic material or consist of a ceramic material.
  • the electrically insulating layer in this case has a thermal conductivity of at least 2 W/(mK).
  • the electrically insulating layer may have a thickness of 30 ⁇ m to 100 ⁇ m.
  • the electrically insulating layer has a thickness of 50 ⁇ m to 70 ⁇ m.
  • the electrically insulating layer may contain boron nitride or consist of boron nitride.
  • the electrically insulating layer can have a thickness of 30 ⁇ m to 100 ⁇ m, for example, of 50 ⁇ m to 70 ⁇ m.
  • the electrically insulating layer in this case has a thermal conductivity of at least 2 W/(mK).
  • the light-emitting diode chips may be electrically conductively connected to the metallic basic body and connected in parallel with one another via the metallic basic body. That is to say that the light-emitting diode chips may then be at the same electrical potential as the metallic basic body on that side of the light-emitting diode chips which faces the metallic basic body.
  • the opening may pass through the electrically insulating layer on the lower side of the carrier completely. That is to say that the electrically insulating layer is also interrupted by the opening.
  • the opening can be produced before or after the electrically insulating layer is applied to the metallic basic body.
  • a side face of the electrically insulating layer in the opening is preferably covered by the electrically insulating material with which the inner face is also covered in the region of the metallic basic body.
  • the inner face of the opening is only coated with the electrically insulating material once the electrically insulating layer has been applied on the lower side of the carrier.
  • the electrically insulating layer on the lower side of the carrier it is also possible for the electrically insulating layer on the lower side of the carrier to be formed with the same material, i.e., the electrically insulating material.
  • An intermediate carrier to which the light-emitting diode chips are affixed may be arranged between the light-emitting diode chips and the mounting face.
  • the intermediate carrier can comprise a ceramic material or consist of a ceramic material. That is to say that the intermediate carrier then represents electrical insulation of the light-emitting diode chips with respect to the carrier and therefore in particular with respect to the metallic basic body. In this case, the electrically insulating layer on the lower side of the carrier can also be dispensed with.
  • the carrier may comprise a further electrically insulating layer affixed to the metallic basic body on the side facing the light-emitting diode chips.
  • An electrically conductive layer to which the light-emitting diode chips are electrically conductively connected is then arranged on that side of the further electrically insulating layer which faces away from the metallic basic body.
  • the electrically conductive layer can in this case be structured to form conductor tracks which make contact between the light-emitting diode chips of the light-emitting diode.
  • the opening may pass through the further electrically insulating layer and the electrically conductive layer completely.
  • side faces of the further electrically insulating layer and the electrically conductive layer in the opening are covered by the electrically insulating material. That is to say that, in this example, preferably the entire inner face of the opening is covered by the electrically insulating material.
  • the further electrically insulating layer and the electrically conductive layer are also covered by the electrically insulating material and thus electrically insulated with respect to the fixing device in the opening.
  • the at least two light-emitting diode chips of the light-emitting diode may be embedded in a reflective coating.
  • all of the light-emitting diode chips of the light-emitting diode are embedded in the reflective coating.
  • “Embedded” means that the reflective coating covers at least points of the light-emitting diode chips and is in direct contact with the light-emitting diode chips at the covering locations. For example, it is possible for the reflective coating to terminate flush with a radiation exit surface of the light-emitting diode chips which faces away from the carrier. Those side faces of the light-emitting diode chips which run transversely with respect to the mounting face can then be covered completely, for example, by the reflective coating.
  • the reflective coating may cover the radiation exit surface of the light-emitting diode chips facing away from the mounting face.
  • the reflective coating then has a small thickness there such that light generated in the light-emitting diode chips during operation can pass to the outside through the reflective coating.
  • the reflective coating then acts as a diffusing layer which diffuses the light passing through.
  • the reflective coating preferably also covers at least parts of the mounting face in addition to the light-emitting diode chips.
  • the mounting face is covered completely by the material of the reflective coating completely at exposed points, i.e., in particular where there is no light-emitting diode chip.
  • the entire carrier it is also possible for the entire carrier to be covered by the reflective coating on its surface facing the light-emitting diode chips. That is to say that all of the exposed regions of the carrier at this surface are then covered by the reflective coating.
  • the reflective coating it is in particular possible for the reflective coating to appear to be white to a viewer when illuminated with daylight, for example. That is to say that the light-emitting diode itself can appear to be white when covered in a suitable manner by the reflective coating, i.e., when, for example, all of the exposed faces of the carrier at the surface facing the light-emitting diode chips are covered by the reflective coating.
  • the reflective coating is diffusely reflective, for example.
  • the reflective coating can be formed by a matrix material.
  • the matrix material can contain a silicone, for example, or consist of a silicone.
  • the matrix material it is possible for the matrix material to be a mixture of a silicone with an epoxide, i.e., a so-called “silicone-epoxide hybrid” material.
  • Reflective particles can be introduced into the matrix material of the reflective coating.
  • the reflective particles are formed, for example, by one of the following materials, i.e., they can consist of one of the following materials: TiO2, BaSO4, ZnO, AlxOy, ZrO2.
  • radiation-reflecting particles formed with ZrO2 are particularly well suited to reflect blue or ultraviolet light.
  • the reflective coating in the matrix material may contain a mixture of different reflective particles formed by different materials from among those mentioned. In this way, the reflection spectrum of the reflective coating can be matched particularly well to the requirements of the light-emitting diode.
  • FIG. 1 shows a schematic sectional illustration of a first example of a light-emitting diode.
  • the light-emitting diode comprises a carrier 1 .
  • the carrier 1 comprises a metallic basic body 12 forming the main part of the carrier.
  • the metallic basic body 12 accounts for at least 95% of the volume and the weight of the carrier.
  • the metallic basic body is formed with copper, for example, i.e., it contains copper or consists of copper.
  • the carrier 1 comprises a further electrically insulating layer 13 applied to points of the outer face 121 of the metallic basic body 12 on the upper side 1 a of the carrier.
  • the further electrically insulating layer 13 can in this case be in direct contact with the metallic basic body 12 .
  • the carrier 1 has openings 3 passing through the carrier, i.e., the metallic basic body 12 , the further electrically insulating layer 13 and the electrically conductive layer 14 , completely from the upper side 1 a of the carrier 1 to the lower side 1 b of the carrier 1 .
  • Inner faces 31 of each opening 3 are in this case covered completely by the electrically insulating material 4 . That is to say that the electrically insulating material 4 covers side faces of the metallic basic body 12 , side faces 131 of the further electrically insulating layer and side faces 141 of the electrically conductive layer.
  • Each opening is used to accommodate a fixing device 8 , for example, a screw.
  • the fixing device 8 is in this case provided to mount the light-emitting diode (see also FIG. 3 for the fixing device 8 ).
  • light-emitting diode chips 2 are applied, for example, soldered, directly to the metallic basic body 12 at the mounting face 11 of the carrier 1 .
  • the light-emitting diode chips 2 in this case connect in parallel with one another and are at the same electrical potential as the metallic basic body 12 on that side of the light-emitting diode chips facing the metallic basic body 12 .
  • the light-emitting diode chips 2 electrically conductively connect to the electrically conductive layer 14 structured to form conductor tracks by bonding wires 21 . It is possible here for one of the bonding wires 21 to electrically conductively connect directly to the metallic basic body 12 .
  • the light-emitting diode comprises four light-emitting diode chips provided to generate blue light and/or UV radiation during operation.
  • a luminescence conversion material is then arranged downstream of each light-emitting diode chip 2 or all of the light-emitting diode chips 2 together, the luminescence conversion material converting at least some of the electromagnetic radiation generated by the light-emitting diode chips 2 during operation such that, overall, white light is emitted by the light-emitting diode.
  • a cover 7 mechanically fixedly connected to the carrier 1 is arranged downstream of all of the light-emitting diode chips 2 .
  • the cover 7 may be a cover consisting of glass, for example.
  • the electrically insulating layer 5 is preferably applied directly to the metallic basic body 12 , the electrically insulating layer electrically insulating the carrier 1 .
  • Side faces 51 of the electrically insulating layer can be covered by the electrically insulating material 4 in the region of the openings 3 which pass through the electrically insulating layer 5 completely.
  • the electrically insulating material 4 and the electrically insulating layer 5 it is also possible for the electrically insulating material 4 and the electrically insulating layer 5 to be formed with the same material.
  • FIG. 2 a second example of a light-emitting diode will be explained in more detail with reference to a schematic sectional illustration.
  • contact is made with the light-emitting diode chips 2 via the electrically conductive layer 14 structured to form conductor tracks.
  • the electrically conductive layer 14 directly contacts with connection points (not shown) of the light-emitting diode chips 2 .
  • the further electrically insulating layer 13 for this purpose covers at least the side faces of some light-emitting diode chips of the light-emitting diode at certain points.
  • the electrically conductive layer 14 passes along the electrically insulating layer 13 at side faces of these light-emitting diode chips 2 to the electrical connection points of the light-emitting diode chips 2 .
  • FIG. 3 a third example of a light-emitting diode is explained in more detail with reference to a schematic sectional illustration.
  • the light-emitting diode chips 2 are electrically insulated from the metallic basic body 12 of the carrier 1 via an electrically insulating intermediate carrier 6 arranged between the metallic basic body 12 and the light-emitting diode chips 2 .
  • the intermediate carrier 6 consists of a ceramic material, for example. On that side of the intermediate carrier 6 facing away from the metallic basic body 12 , metallic conductor tracks can be structured via which the light-emitting diode chips 2 connect in parallel on the intermediate carrier 6 .
  • the light-emitting diode shown in FIG. 3 is characterized by a simplified manufacturing procedure over the examples shown in FIGS. 1 and 2 since there is no need for application of the electrically insulating layer 5 .
  • cover 7 it is possible for the cover 7 to be provided or dispensed with.
  • the cover 7 can form mechanical protection for the light-emitting diode chips 2 and furthermore exhibit optical properties such as radiation conversion and/or radiation diffusion.
  • the light-emitting diode in this case comprises a reflective coating 151 in which the light-emitting diode chips 2 are embedded.
  • the reflective coating 151 in this case covers the mounting face 11 of the carrier 1 completely.
  • the light-emitting diode chips 2 protrude with their surfaces facing away from the carrier 1 , which represent the radiation exit surfaces of the light-emitting diode chips 2 , out of the reflective coating 151 .
  • the reflective coating 151 terminates flush with these surfaces.
  • the reflective coating is formed with a matrix material such as silicone, for example, with radiation-reflecting particles, for example, consisting of titanium dioxide, being introduced into the matrix material.
  • a reflective coating 151 can be used in this case in all of the examples of the light-emitting diode. For example, in the example shown in FIG. 3 , the reflective coating 151 would then also cover the exposed outer face of the intermediate carrier 6 completely.

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Abstract

A light-emitting diode includes a carrier including a metallic basic body having an outer face including a mounting face; and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein the at least two light-emitting diode chips are embedded in a reflective coating covering the mounting face and side faces of the at least two light-emitting diode chips, the at least two light-emitting diode chips have radiation exit surfaces facing away from the carrier, and the at least two light-emitting diode chips protrude with radiation exit surfaces out of the reflective coating, or the reflective coating terminates flush with the radiation exit surfaces of the at least two light-emitting diode chips.

Description

    TECHNICAL FIELD
  • This disclosure relates to light-emitting diodes.
    • BACKGROUND
  • WO 2006/012842 describes a light-emitting module.
  • When using light-emitting diodes in motor vehicle headlamps, dissipation of heat generated by the light-emitting diodes during operation is often problematic. Accordingly, it could be helpful to provide a light-emitting diode which is particularly well suited for use in a motor vehicle headlamp.
    • SUMMARY
  • We provide light-emitting diodes including a carrier with a mounting face and including a metallic basic body and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips connect in parallel with one another, the at least two light-emitting diode chips are embedded in a reflective coating, the reflective coating covering the mounting face and side faces of the light-emitting diode chips, and the light-emitting diode chips protrude with their radiation exit surfaces out of the reflective coating and the radiation exit surfaces face away from the carrier.
  • We also provide light-emitting diodes including a carrier with a mounting face and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein the carrier includes a metallic basic body, an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips are connected in parallel with one another, the at least two light-emitting diode chips are embedded in a reflective coating, the reflective coating covers the mounting face and side faces of the light-emitting diode chips, and the reflective coating terminates flush with radiation exit surfaces of the light-emitting diode chips facing away from the carrier.
  • We further provide light-emitting diodes including a carrier with a mounting face and at least two light-emitting diode chips affixed to the carrier at the mounting face, wherein the carrier includes a metallic basic body, an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips are connected in parallel with one another, the mounting face is arranged on an upper side of the carrier, the light-emitting diode chips are directly affixed to the carrier at the mounting face, the light-emitting diode chips electrically conductively connect to the metallic basic body, the light-emitting diode chips connect in parallel with one another via the metallic basic body, an electrically insulating layer is affixed to the carrier on a lower side of the carrier, and the electrically insulating layer has a thermal conductivity of at least 2 W/(mK).
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIGS. 1, 2, 3 and 4 are schematic sectional illustrations showing examples of light-emitting diodes.
    •  DETAILED DESCRIPTION
  • The light-emitting diodes may comprise a carrier. The carrier may be in the form of a plate, for example. That is to say that the lateral extent of the carrier is great in comparison with its thickness. The carrier has a mounting face provided to accommodate components of the light-emitting diode.
  • The light-emitting diode may comprise at least two light-emitting diode chips. The light-emitting diode preferably comprises a large number of light-emitting diode chips, for example, four or more light-emitting diode chips. The light-emitting diode chips of the light-emitting diode are provided for the purpose of generating electromagnetic radiation in the frequency band of infrared radiation to UV radiation during operation. The light-emitting diode chips in this case represent the light sources of the light-emitting diode. Preferably, the light-emitting diode itself emits white light.
  • The at least two light-emitting diode chips, preferably all of the light-emitting diode chips of the light-emitting diode, may be affixed to the carrier at least indirectly at the mounting face. “At least indirectly” means that it is possible for there to be further material such as an intermediate carrier or a connector, for example, an adhesive or solder between the light-emitting diode chips and the mounting face.
  • The carrier may have a metallic basic body. Preferably, the metallic basic body then forms the main part of the carrier. For example, the metallic basic body accounts for at least 90% of the volume and at least 90% of the weight of the carrier. The metallic basic body is formed with a metal with good electrical and thermal conductivity such as copper, for example.
  • The metallic basic body comprises an outer face comprising the mounting face of the carrier. That is to say that at least points of the outer face of the metallic basic body of the carrier form the mounting face, at which the at least two light-emitting diode chips are affixed at least indirectly to the carrier.
  • The at least two light-emitting diode chips, preferably all of the light-emitting diode chips of the light-emitting diode, connect electrically in parallel with one another.
  • The light-emitting diode may comprise a carrier with a mounting face and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face. In this case, the carrier comprises a metallic basic body which has an outer face which comprises the mounting face of the carrier. The at least two light-emitting diode chips of the light-emitting diode are in this case connected in parallel with one another.
  • The light-emitting diode described here is based on the idea, inter alia, that the arrangement of the light-emitting diode chips of the light-emitting diode as close as possible to a metallic basic body enables particularly efficient spreading of the heat generated by the light-emitting diode chips during operation of the light-emitting diodes. That is to say that the heat generated by the light-emitting diode chips is distributed over the entire volume of the metallic basic body which forms a main part of the carrier as soon as possible after the generation of the heat.
  • The light-emitting diode may comprise at least one opening in the carrier. The opening in this case extends from an upper side of the carrier to a lower side of the carrier, the lower side facing away from the upper side. For example, the opening extends from a top face of the carrier to a bottom face of the carrier. The opening passes through the carrier preferably completely. The opening can be in the form of a bore in the carrier, for example, or the opening is already provided during manufacture of the carrier. The opening has an inner face in which the material of the carrier adjoins the opening. In this case, the inner face is covered by an electrically insulating material. For example, the entire inner face of the opening is coated with the electrically insulating material, with the result that there is no point within the opening at which material of the carrier is exposed.
  • For example, the opening is used to accommodate a fixing device to mount the light-emitting diode. For example, the fixing device may be a screw or a locating pin for a press fit.
  • The electrically insulating material used to cover the inner face of the opening is, for example, an electrically insulating plastic or a layer formed by an electrically insulating material such as silicon dioxide or silicon nitride. In addition, the electrically insulating material can be ceramic. The electrically insulating material can contain a boron nitride or consist of a boron nitride, for example. The electrically insulating material can cover the side face or the side faces of the opening completely in the form of a layer. The electrically insulating material can be applied with a thickness of 30 gm to 100 gm, for example.
  • The light-emitting diode can comprise a plurality of openings, for example, two or more openings in the carrier. Each of the openings is then configured in the described manner and is used to accommodate a fixing device to mount the light-emitting diode at the intended use location.
  • The opening may pass through the metallic basic body completely. That is to say that the at least one opening is formed in the carrier in the region of the metallic basic body. The inner face of the opening is then preferably covered completely by the electrically insulating material at least in the region of the metallic basic body. That is to say that the metallic basic body is not exposed at any point of the opening and can therefore be kept free of potential in a simple manner during operation of the light-emitting diode.
  • The mounting face of the carrier may be arranged on the upper side of the carrier and the light-emitting diode chips are affixed to the carrier directly at the mounting face. For example, the light-emitting diode chips are in this case soldered onto the carrier at the mounting face. In other words, the light-emitting diode chips are applied directly to the metallic basic body of the carrier and in direct contact therewith, apart from a connector such as the solder, for example. Then, an electrically insulating layer is affixed to the carrier on the lower side of the carrier, i.e., on the side of the carrier which faces away from the mounting face. The electrically insulating layer is preferably in direct contact with the metallic basic body. The electrically insulating layer covers the carrier on its lower side preferably completely, apart from the openings. That is to say that the metallic basic body is then also covered completely by the electrically insulating layer on its side facing away from the mounting face.
  • The electrically insulating layer in this case has a thermal conductivity of at least 2 W/(mK).
  • In other words, in this example, the light-emitting diode chips are mounted directly on the metallic basic body which enables optimum thermal coupling of the light-emitting diode chips to the carrier. The entire metallic basic body of the carrier acts as a heat-spreading element. In this case, the light-emitting diode chips can be electrically conductively connected to the metallic basic body and connected in parallel with one another via the metallic basic body. The electrical insulation of the metallic basic body is formed on the side facing away from the mounting face by the electrically insulating layer which is characterized by particularly high thermal conductivity. This design of the light-emitting diode enables early spreading of heat directly at the heat source, i.e., the light-emitting diode chips and, thus, a particularly low thermal resistivity of the entire light-emitting diode.
  • The electrically insulating layer may be a ceramic layer. This means that the electrically insulating layer may have ceramic properties. The electrically insulating layer can then contain a ceramic material or consist of a ceramic material. The electrically insulating layer in this case has a thermal conductivity of at least 2 W/(mK).
  • The electrically insulating layer may have a thickness of 30 μm to 100 μm. For example, the electrically insulating layer has a thickness of 50 μm to 70 μm.
  • The electrically insulating layer may contain boron nitride or consist of boron nitride. In this case, the electrically insulating layer can have a thickness of 30 μm to 100 μm, for example, of 50 μm to 70 μm. The electrically insulating layer in this case has a thermal conductivity of at least 2 W/(mK).
  • The light-emitting diode chips may be electrically conductively connected to the metallic basic body and connected in parallel with one another via the metallic basic body. That is to say that the light-emitting diode chips may then be at the same electrical potential as the metallic basic body on that side of the light-emitting diode chips which faces the metallic basic body.
  • The opening may pass through the electrically insulating layer on the lower side of the carrier completely. That is to say that the electrically insulating layer is also interrupted by the opening. In this case, the opening can be produced before or after the electrically insulating layer is applied to the metallic basic body. A side face of the electrically insulating layer in the opening is preferably covered by the electrically insulating material with which the inner face is also covered in the region of the metallic basic body. For example, for this purpose, the inner face of the opening is only coated with the electrically insulating material once the electrically insulating layer has been applied on the lower side of the carrier. In this case, it is also possible for the electrically insulating layer on the lower side of the carrier to be formed with the same material, i.e., the electrically insulating material.
  • An intermediate carrier to which the light-emitting diode chips are affixed may be arranged between the light-emitting diode chips and the mounting face. The intermediate carrier can comprise a ceramic material or consist of a ceramic material. That is to say that the intermediate carrier then represents electrical insulation of the light-emitting diode chips with respect to the carrier and therefore in particular with respect to the metallic basic body. In this case, the electrically insulating layer on the lower side of the carrier can also be dispensed with.
  • The carrier may comprise a further electrically insulating layer affixed to the metallic basic body on the side facing the light-emitting diode chips. An electrically conductive layer to which the light-emitting diode chips are electrically conductively connected is then arranged on that side of the further electrically insulating layer which faces away from the metallic basic body. The electrically conductive layer can in this case be structured to form conductor tracks which make contact between the light-emitting diode chips of the light-emitting diode.
  • The opening may pass through the further electrically insulating layer and the electrically conductive layer completely. In this case, side faces of the further electrically insulating layer and the electrically conductive layer in the opening are covered by the electrically insulating material. That is to say that, in this example, preferably the entire inner face of the opening is covered by the electrically insulating material. With the exception of the metallic basic body, the further electrically insulating layer and the electrically conductive layer are also covered by the electrically insulating material and thus electrically insulated with respect to the fixing device in the opening.
  • The at least two light-emitting diode chips of the light-emitting diode may be embedded in a reflective coating. Preferably, all of the light-emitting diode chips of the light-emitting diode are embedded in the reflective coating.
  • “Embedded” means that the reflective coating covers at least points of the light-emitting diode chips and is in direct contact with the light-emitting diode chips at the covering locations. For example, it is possible for the reflective coating to terminate flush with a radiation exit surface of the light-emitting diode chips which faces away from the carrier. Those side faces of the light-emitting diode chips which run transversely with respect to the mounting face can then be covered completely, for example, by the reflective coating.
  • Furthermore, it is also possible for the reflective coating to cover the radiation exit surface of the light-emitting diode chips facing away from the mounting face. The reflective coating then has a small thickness there such that light generated in the light-emitting diode chips during operation can pass to the outside through the reflective coating. At the radiation exit surfaces of the light-emitting diode chips, the reflective coating then acts as a diffusing layer which diffuses the light passing through.
  • The reflective coating preferably also covers at least parts of the mounting face in addition to the light-emitting diode chips. For example, the mounting face is covered completely by the material of the reflective coating completely at exposed points, i.e., in particular where there is no light-emitting diode chip. In particular, it is also possible for the entire carrier to be covered by the reflective coating on its surface facing the light-emitting diode chips. That is to say that all of the exposed regions of the carrier at this surface are then covered by the reflective coating.
  • In this case, it is in particular possible for the reflective coating to appear to be white to a viewer when illuminated with daylight, for example. That is to say that the light-emitting diode itself can appear to be white when covered in a suitable manner by the reflective coating, i.e., when, for example, all of the exposed faces of the carrier at the surface facing the light-emitting diode chips are covered by the reflective coating.
  • In this case, the reflective coating is diffusely reflective, for example. The reflective coating can be formed by a matrix material. The matrix material can contain a silicone, for example, or consist of a silicone. In addition, it is possible for the matrix material to be a mixture of a silicone with an epoxide, i.e., a so-called “silicone-epoxide hybrid” material. Reflective particles can be introduced into the matrix material of the reflective coating. The reflective particles are formed, for example, by one of the following materials, i.e., they can consist of one of the following materials: TiO2, BaSO4, ZnO, AlxOy, ZrO2. In particular, radiation-reflecting particles formed with ZrO2 are particularly well suited to reflect blue or ultraviolet light.
  • In particular, it is also possible for the reflective coating in the matrix material to contain a mixture of different reflective particles formed by different materials from among those mentioned. In this way, the reflection spectrum of the reflective coating can be matched particularly well to the requirements of the light-emitting diode.
  • The light-emitting diode described here will be explained in more detail below with reference to examples and the associated Drawings.
  • Identical, similar or functionally identical elements have been provided with the same reference symbols in the Drawings. The Drawings and the size ratios of the elements illustrated therein with respect to one another should not be considered as being to scale. Instead, individual elements may be illustrated as being excessively large for reasons of improved representation and/or better understanding.
  • FIG. 1 shows a schematic sectional illustration of a first example of a light-emitting diode. The light-emitting diode comprises a carrier 1. The carrier 1 comprises a metallic basic body 12 forming the main part of the carrier. In this case, the metallic basic body 12 accounts for at least 95% of the volume and the weight of the carrier. The metallic basic body is formed with copper, for example, i.e., it contains copper or consists of copper.
  • The carrier 1 comprises a further electrically insulating layer 13 applied to points of the outer face 121 of the metallic basic body 12 on the upper side 1 a of the carrier. The further electrically insulating layer 13 can in this case be in direct contact with the metallic basic body 12. An electrically conductive layer 14 structured to form conductor tracks, for example, is applied to that side of the further electrically insulating layer 13 facing away from the metallic basic body 12.
  • The carrier 1 has openings 3 passing through the carrier, i.e., the metallic basic body 12, the further electrically insulating layer 13 and the electrically conductive layer 14, completely from the upper side 1 a of the carrier 1 to the lower side 1 b of the carrier 1.
  • Inner faces 31 of each opening 3 are in this case covered completely by the electrically insulating material 4. That is to say that the electrically insulating material 4 covers side faces of the metallic basic body 12, side faces 131 of the further electrically insulating layer and side faces 141 of the electrically conductive layer.
  • Each opening is used to accommodate a fixing device 8, for example, a screw. The fixing device 8 is in this case provided to mount the light-emitting diode (see also FIG. 3 for the fixing device 8).
  • In the example shown in FIG. 1, light-emitting diode chips 2 are applied, for example, soldered, directly to the metallic basic body 12 at the mounting face 11 of the carrier 1. The light-emitting diode chips 2 in this case connect in parallel with one another and are at the same electrical potential as the metallic basic body 12 on that side of the light-emitting diode chips facing the metallic basic body 12.
  • The light-emitting diode chips 2 electrically conductively connect to the electrically conductive layer 14 structured to form conductor tracks by bonding wires 21. It is possible here for one of the bonding wires 21 to electrically conductively connect directly to the metallic basic body 12. For example, the light-emitting diode comprises four light-emitting diode chips provided to generate blue light and/or UV radiation during operation. A luminescence conversion material is then arranged downstream of each light-emitting diode chip 2 or all of the light-emitting diode chips 2 together, the luminescence conversion material converting at least some of the electromagnetic radiation generated by the light-emitting diode chips 2 during operation such that, overall, white light is emitted by the light-emitting diode.
  • In the example shown in FIG. 1, a cover 7 mechanically fixedly connected to the carrier 1, is arranged downstream of all of the light-emitting diode chips 2. The cover 7 may be a cover consisting of glass, for example. In addition, it is possible for the cover 7 to contain particles of a ceramic luminescence conversion material or to consist of a ceramic luminescence conversion material.
  • On the lower side of the carrier 1 facing away from the light-emitting diode chips 2, the electrically insulating layer 5 is preferably applied directly to the metallic basic body 12, the electrically insulating layer electrically insulating the carrier 1. Side faces 51 of the electrically insulating layer can be covered by the electrically insulating material 4 in the region of the openings 3 which pass through the electrically insulating layer 5 completely. In this case, it is also possible for the electrically insulating material 4 and the electrically insulating layer 5 to be formed with the same material.
  • In connection with FIG. 2, a second example of a light-emitting diode will be explained in more detail with reference to a schematic sectional illustration. In contrast to the example shown in FIG. 1, in this example contact is made with the light-emitting diode chips 2 via the electrically conductive layer 14 structured to form conductor tracks. For this purpose, the electrically conductive layer 14 directly contacts with connection points (not shown) of the light-emitting diode chips 2. In the example shown in FIG. 2, the further electrically insulating layer 13 for this purpose covers at least the side faces of some light-emitting diode chips of the light-emitting diode at certain points. The electrically conductive layer 14 passes along the electrically insulating layer 13 at side faces of these light-emitting diode chips 2 to the electrical connection points of the light-emitting diode chips 2.
  • In connection with FIG. 3, a third example of a light-emitting diode is explained in more detail with reference to a schematic sectional illustration. In this example, in contrast to FIG. 1, there is no electrically insulating layer 5. The light-emitting diode chips 2 are electrically insulated from the metallic basic body 12 of the carrier 1 via an electrically insulating intermediate carrier 6 arranged between the metallic basic body 12 and the light-emitting diode chips 2. The intermediate carrier 6 consists of a ceramic material, for example. On that side of the intermediate carrier 6 facing away from the metallic basic body 12, metallic conductor tracks can be structured via which the light-emitting diode chips 2 connect in parallel on the intermediate carrier 6. The light-emitting diode shown in FIG. 3 is characterized by a simplified manufacturing procedure over the examples shown in FIGS. 1 and 2 since there is no need for application of the electrically insulating layer 5. There is the disadvantage, in contrast to the examples explained in connection with FIGS. 1 and 2, that there is no direct spreading of heat from the light-emitting diode chips 2 into the metallic basic body 12, but the thermal conductivity is reduced by the intermediate carrier 6.
  • In all of the examples, it is possible for the cover 7 to be provided or dispensed with. The cover 7 can form mechanical protection for the light-emitting diode chips 2 and furthermore exhibit optical properties such as radiation conversion and/or radiation diffusion.
  • A further example of a light-emitting diode is explained with reference to the schematic sectional illustration shown in FIG. 4. In contrast to the previous examples, the light-emitting diode in this case comprises a reflective coating 151 in which the light-emitting diode chips 2 are embedded. The reflective coating 151 in this case covers the mounting face 11 of the carrier 1 completely. In the example shown in FIG. 4, the light-emitting diode chips 2 protrude with their surfaces facing away from the carrier 1, which represent the radiation exit surfaces of the light-emitting diode chips 2, out of the reflective coating 151. For example, the reflective coating 151 terminates flush with these surfaces. In this case, the reflective coating is formed with a matrix material such as silicone, for example, with radiation-reflecting particles, for example, consisting of titanium dioxide, being introduced into the matrix material.
  • A reflective coating 151 can be used in this case in all of the examples of the light-emitting diode. For example, in the example shown in FIG. 3, the reflective coating 151 would then also cover the exposed outer face of the intermediate carrier 6 completely.
  • Our light-emitting diodes are not restricted to the examples by the description relating thereto. Instead, this disclosure includes any novel feature and combination of features which includes in particular any combination of features in the appended claims, even if the feature or combination has not itself been explicitly specified in the claims or examples.

Claims (20)

1. A light-emitting diode comprising:
a carrier comprising a metallic basic body having an outer face comprising a mounting face; and
at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face,
wherein the at least two light-emitting diode chips are embedded in a reflective coating covering the mounting face and side faces of the at least two light-emitting diode chips,
the at least two light-emitting diode chips have radiation exit surfaces facing away from the carrier, and
the at least two light-emitting diode chips protrude with radiation exit surfaces out of the reflective coating, or the reflective coating terminates flush with the radiation exit surfaces of the at least two light-emitting diode chips.
2. The light-emitting diode according to claim 1, wherein the reflective coating completely covers the mounting face at its exposed regions.
3. The light-emitting diode according to claim 1, wherein all exposed regions of the carrier on its surface facing the light-emitting diode chips are covered by the reflective coating.
4. The light-emitting diode according to claim 1, wherein the side faces of the at least two light-emitting diode chips are covered completely by the reflective coating.
5. The light-emitting diode according to claim 1, wherein the reflective coating is formed as one-piece.
6. The light-emitting diode according to claim 1, comprising a plurality of light-emitting diode chips spaced apart from each other on the mounting face, wherein spaces between the light-emitting diode chips are filled by the reflective coating.
7. The light-emitting diode according to claim 1, further comprising an electrically insulating intermediate carrier, wherein
the intermediate carrier is arranged between the light-emitting diode chips and the mounting face,
the light-emitting diode chips are affixed to the intermediate carrier, and
the reflective coating covers an exposed outer face of the intermediate carrier completely.
8. The light-emitting diode according to claim 1, wherein the light-emitting diode chips are directly affixed to the carrier at an upper side of the carrier and electrically connect in parallel with one another.
9. The light-emitting diode according to claim 1, wherein the light-emitting diode chips electrically connect to the metallic basic body and connect in parallel with one another via the metallic basic body.
10. The light-emitting diode according to claim 1, wherein
the carrier comprises a further electrically insulating layer affixed to the metallic basic body on the side facing the light-emitting diode chips,
the carrier comprises an electrically conductive layer affixed to the further electrically insulating layer on a side facing away from the metallic basic body,
the electrically conductive layer comprises a first conductor track electrically connected to the at least two light-emitting diode chips and a further conductor track electrically connected to the metallic basic body, and
the light-emitting diode chips electrically connect in parallel with one another via the metallic basic body.
11. The light-emitting diode according to claim 1, further comprising an electrically insulating layer affixed to the carrier on a lower side of the carrier facing away from the mounting face.
12. The light-emitting diode according to claim 11, wherein the electrically insulating layer
has a thermal conductivity of at least 2 W/(mK),
contains a ceramic material or boron nitride or consists of born nitride, and
has a thickness of 30 μm to 100 μm.
13. The light-emitting diode according to claim 1, comprising at least one opening in the carrier, said opening extending from an upper side of the carrier to a lower side of the carrier, said lower side facing away from the upper side, wherein
the at least one opening completely passes through the metallic basic body,
an inner face of the at least one opening is covered by an electrically insulating material, and
the at least one opening accommodates a fixing device that mounts the light-emitting diode.
14. The light-emitting diode according to claim 10, comprising at least one opening in the carrier, wherein
the at least one opening completely passes through the further electrically insulating layer and the electrically conductive layer, and
a side face of the further electrically insulating layer in the at least one opening and a side face of the electrically conductive layer in the at least one opening are covered by an electrically insulating material.
15. The light-emitting diode according to claim 1, wherein the metallic basic body accounts for at least 90% of the volume or at least 90% of the weight of the carrier.
16. A light-emitting diode comprising:
a carrier comprising a metallic basic body having an outer face comprising a mounting face; and
a plurality light-emitting diode chips affixed to the carrier at least indirectly at the mounting face,
wherein the light-emitting diode chips are embedded in a reflective coating, wherein side faces of the light-emitting diode chips are in direct contact with the reflective coating,
the light-emitting diode chips have radiation exit surfaces facing away from the carrier, wherein the light-emitting diode chips protrude with the radiation exit surfaces out of the reflective coating, or the reflective coating terminates flush with the radiation exit surfaces of the light-emitting diode chips,
the reflective coating completely covers the mounting face at its exposed regions, and
the light-emitting diode chips are spaced apart from each other on the mounting face, wherein spaces between the light-emitting diode chips are filled by the reflective coating.
17. The light-emitting diode according to claim 16, wherein the radiation exit surfaces of the light-emitting diode chips are free of the reflective coating and all the side faces of the light-emitting diode chips are covered by the reflective coating.
18. The light-emitting diode according to claim 16, wherein the reflective coating is diffusely reflective and formed by a matrix material and reflective particles introduced into the matrix material.
19. The light-emitting diode according to claim 18, further comprising a cover, wherein the cover
contains particles of a luminescence conversion material,
is mechanically fixed to the carrier, and
is arranged downstream of the light-emitting diode chips.
20. A light-emitting diode comprising a carrier with a mounting face and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein
the carrier comprises a metallic basic body,
an outer face of the metallic basic body comprises the mounting face,
the at least two light-emitting diode chips connect in parallel with one another,
the mounting face is arranged on an upper side of the carrier,
the light-emitting diode chips are directly affixed to the carrier at the mounting face,
the light-emitting diode chips electrically conductively connect to the metallic basic body,
the light-emitting diode chips connect in parallel with one another via the metallic basic body,
an electrically insulating layer is affixed to the carrier on a lower side of the carrier, and
the electrically insulating layer has a thermal conductivity of at least 2 W/(mK).
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431378B2 (en) * 2010-07-07 2016-08-30 Osram Opto Semiconductors Gmbh Light-emitting diodes
US10381391B2 (en) * 2015-05-13 2019-08-13 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009054519A1 (en) * 2009-12-10 2011-06-16 Osram Gesellschaft mit beschränkter Haftung Led lamp
KR101922528B1 (en) * 2012-07-06 2018-11-28 엘지이노텍 주식회사 Light emitting device package
US10591124B2 (en) 2012-08-30 2020-03-17 Sabic Global Technologies B.V. Heat dissipating system for a light, headlamp assembly comprising the same, and method of dissipating heat
GB201216024D0 (en) * 2012-09-07 2012-10-24 Litecool Ltd LED thermal management
DE102012112988A1 (en) 2012-12-21 2014-07-10 Osram Opto Semiconductors Gmbh Optoelectronic component, method for producing an optoelectronic component and headlight
DE102013103409A1 (en) * 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and optoelectronic module
JP2015109337A (en) * 2013-12-04 2015-06-11 日東電工株式会社 Thermosetting resin composition for optical semiconductor devices, lead frame for optical semiconductor devices obtained by using the same, and optical semiconductor device
CN211045429U (en) * 2016-07-15 2020-07-17 3M创新有限公司 Flexible multilayer construction and L ESD package

Citations (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938178A (en) * 1971-12-22 1976-02-10 Origin Electric Co., Ltd. Process for treatment of semiconductor
US20020021871A1 (en) * 2000-07-18 2002-02-21 Albert Auburger Optoelectronic surface-mountable module and optoelectronic coupling unit
US20020079506A1 (en) * 1997-09-01 2002-06-27 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US20030081384A1 (en) * 2001-10-31 2003-05-01 Rider Jerald Ray Method for increasing the dielectric strength of isolated base integrated circuits used with variable frequency drives
US20040079941A1 (en) * 2002-10-18 2004-04-29 Shunpei Yamazaki Semiconductor apparatus and fabrication method of the same
US20050218531A1 (en) * 2002-06-28 2005-10-06 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing it
US20060000591A1 (en) * 2002-04-17 2006-01-05 Adams Richard W Metal matrix composite structure and method
US20060128059A1 (en) * 1998-08-31 2006-06-15 Micron Technology, Inc. Compact system module with built-in thermoelectric cooling
US20060263003A1 (en) * 2003-11-27 2006-11-23 Ibiden Co., Ltd. Substrate for mounting IC chip, substrate for motherboard, device for optical communication, manufacturing method of substrate for mounting IC chip, and manufacturing method of substrate for motherboard
US20070075325A1 (en) * 2005-10-04 2007-04-05 Samsung Electro-Mechanics Co., Ltd. High power light emitting diode package
US20070090383A1 (en) * 2000-12-28 2007-04-26 Toyoda Gosei Co., Ltd. Light emitting device
US20070228386A1 (en) * 2006-03-30 2007-10-04 Jin-Shown Shie Wire-bonding free packaging structure of light emitted diode
US7420218B2 (en) * 2004-03-18 2008-09-02 Matsushita Electric Industrial Co., Ltd. Nitride based LED with a p-type injection region
US20080231169A1 (en) * 2007-03-23 2008-09-25 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same
US20080247703A1 (en) * 2007-04-04 2008-10-09 Ibiden Co., Ltd Substrate for mounting ic chip and device for optical communication
US20080303038A1 (en) * 2005-02-28 2008-12-11 Stefan Grotsch Module Comprising Radiation-Emitting Semiconductor Bodies
US20090050907A1 (en) * 2005-01-10 2009-02-26 Cree, Inc. Solid state lighting component
US20090179207A1 (en) * 2008-01-11 2009-07-16 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US20090279300A1 (en) * 2006-05-31 2009-11-12 Denki Kagaku Kogyo Kabushiki Kaisha Led light source unit
US20100027261A1 (en) * 2007-01-30 2010-02-04 Denki Kagaku Kogyo Kabushiki Kaisha Led light source unit
US20100044746A1 (en) * 2006-12-21 2010-02-25 Koninklijke Philips Electronics N.V. Carrier and optical semiconductor device based on such a carrier
US20100060157A1 (en) * 2008-09-10 2010-03-11 Wei Shi Phosphor layer arrangement for use with light emitting diodes
US20100140780A1 (en) * 2008-12-10 2010-06-10 Stats Chippac, Ltd. Semiconductor Device and Method of Forming an IPD Beneath a Semiconductor Die with Direct Connection to External Devices
US7745832B2 (en) * 2004-09-24 2010-06-29 Epistar Corporation Semiconductor light-emitting element assembly with a composite substrate
US20100181589A1 (en) * 2008-12-11 2010-07-22 Huang Tien-Hao Chip package structure and method for fabricating the same
US20100213479A1 (en) * 2009-02-24 2010-08-26 Industrial Technology Research Institute Light emitting diode package structure
US20100224858A1 (en) * 2009-03-06 2010-09-09 Advanced Optoelectronic Technology Inc. Lateral thermal dissipation led and fabrication method thereof
US20100258827A1 (en) * 2009-04-09 2010-10-14 Lextar Electronics Corp. Light-emitting diode package and wafer-level packaging process of light-emitting diode
US20100283064A1 (en) * 2006-12-22 2010-11-11 Qunano Ab Nanostructured led array with collimating reflectors
US20110001148A1 (en) * 2009-07-06 2011-01-06 Zhuo Sun Thin flat solid state light source module
US20110042699A1 (en) * 2009-08-24 2011-02-24 Samsung Electro-Mechanics Co., Ltd, Substrate for light emitting diode package and light emitting diode package having the same
US20110057205A1 (en) * 2004-11-15 2011-03-10 Koninklijke Philips Electronics N.V. Led with phosphor tile and overmolded phosphor in lens
US20110090691A1 (en) * 2009-10-15 2011-04-21 Joshua Josiah Markle Lamp assemblies and methods of making the same
US20110132644A1 (en) * 2008-05-29 2011-06-09 Taiki Nishi Metal base circuit board
US20110170303A1 (en) * 2010-01-14 2011-07-14 Shang-Yi Wu Chip package and fabrication method thereof
US20110220955A1 (en) * 2010-03-09 2011-09-15 Kyung Wook Park Light emitting device
US20110254039A1 (en) * 2010-04-15 2011-10-20 Kyu Sang Kim Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package
US20110267557A1 (en) * 2010-01-29 2011-11-03 Nitto Denko Corporation Back light and liquid crystal display device
US8053787B2 (en) * 2007-06-28 2011-11-08 Wen-Chin Shiau Lamp seat for a light emitting diode and capable of heat dissipation, and method of manufacturing the same
US20110278627A1 (en) * 2006-12-21 2011-11-17 Geun-Ho Kim Light emitting device package and method for manufacturing the same
US20110278624A1 (en) * 2009-02-17 2011-11-17 Ki Myung Nam Substrate for an optical device, an optical device package comprising the same and a production method for the same
US20110284887A1 (en) * 2010-05-21 2011-11-24 Shang-Yi Wu Light emitting chip package and method for forming the same
US20110298110A1 (en) * 2010-06-04 2011-12-08 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Thermally Conductive Layer Between Semiconductor Die and Build-Up Interconnect Structure
US20110303945A1 (en) * 2009-02-12 2011-12-15 Osram Opto Semiconductors Gmbh Semiconductor arrangement and method of producing a semiconductor arrangement
US20120104618A1 (en) * 2006-12-28 2012-05-03 Yusuke Yasuda Low temperature bonding material and bonding method
US20120110842A1 (en) * 2005-06-27 2012-05-10 Mazzochette Joseph B Led package with stepped aperture
US20120132947A1 (en) * 2009-07-15 2012-05-31 Osram Opto Semiconductors Gmbh Light-emitting diode and method for producing a light-emitting diode
US20120153316A1 (en) * 2008-06-30 2012-06-21 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
US20120164767A1 (en) * 2009-08-18 2012-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of manufacturing a light emission device based on light emitting diodes
US20120199843A1 (en) * 2010-04-09 2012-08-09 Cree, Inc. High reflective board or substrate for leds
US20120223416A1 (en) * 2009-11-13 2012-09-06 Osram Opto Semiconductors Gmbh Thin-film semiconductor component with protection diode structure and method for producing a thin-film semiconductor component
US20120322178A1 (en) * 2004-09-13 2012-12-20 Osram Opto Semiconductors Gmbh Method of Producing a Radiation-Emitting Optoelectronic Component
US20130069089A1 (en) * 2008-11-18 2013-03-21 Cree, Inc High Efficacy Semiconductor Light Emitting Devices Employing Remote Phosphor Configurations
US8409930B2 (en) * 2007-03-27 2013-04-02 Oki Semiconductor Co., Ltd. Semiconductor device manufacturing method
US20130126928A1 (en) * 2009-02-19 2013-05-23 Lite-On Technology Corp. Light emitting diode chip, and methods for manufacturing and packaging the same
US20130207247A1 (en) * 2008-12-10 2013-08-15 Stats Chippac, Ltd. Semiconductor Device and Method of Forming a Shielding Layer Over a Semiconductor Die After Forming a Build-up Interconnect Structure
US8513682B2 (en) * 2007-12-21 2013-08-20 Osram Opto Semiconductors Gmbh Optoelectronic component and production method for an optoelectronic component
US20130215613A1 (en) * 2012-02-17 2013-08-22 Tsmc Solid State Lighting Ltd. Led packaging structure having improved thermal dissipation and mechanical strength
US8535985B2 (en) * 2008-03-25 2013-09-17 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a bump/base heat spreader and an inverted cavity in the bump
US20130241040A1 (en) * 2012-03-14 2013-09-19 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20130252357A1 (en) * 2009-06-10 2013-09-26 Bridgelux, Inc. Thin-film led with p and n contacts electrically isolated from the substrate
US20130299982A1 (en) * 2009-09-23 2013-11-14 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Interposer with Opening to Contain Semiconductor Die
US8723192B2 (en) * 2009-08-07 2014-05-13 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component
US8890306B2 (en) * 2010-07-07 2014-11-18 Osram Opto Semiconductor Gmbh Light-emitting diode
US20140369045A1 (en) * 2012-01-03 2014-12-18 Koninklijke Philips N.V. Lighting Assembly, a Light Source and a Luminaire
US20150108531A1 (en) * 2012-05-07 2015-04-23 Osram Optp Semiconductors Gmbh Method of producing a component carrier, an electronic arrangement and a radiation arrangement, and component carrier, electronic arrangement and radiation arrangement
US9190394B2 (en) * 2011-09-29 2015-11-17 Osram Opto Semiconductors Gmbh LED module
US9362335B2 (en) * 2011-12-22 2016-06-07 Osram Opto Semiconductors Gmbh Display device and method for producing a display device
US9379161B2 (en) * 2013-02-12 2016-06-28 Osram Opto Semiconductors Gmbh Monolithic semiconductor chip array

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150969A (en) * 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp Semiconductor light emitting device
DE10051159C2 (en) * 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED module, e.g. White light source
ATE425556T1 (en) 2001-04-12 2009-03-15 Matsushita Electric Works Ltd LIGHT SOURCE COMPONENT WITH LED AND METHOD FOR PRODUCING IT
DE10245946C1 (en) * 2002-09-30 2003-10-23 Osram Opto Semiconductors Gmbh Production of a light source module comprises arranging light emitting diodes in a recess of a casting frame, casting the recesses and removing the casting frame
WO2004068596A1 (en) * 2003-01-25 2004-08-12 Nam-Young Kim Lamp module with light emitting diode
JP2007529105A (en) * 2003-07-16 2007-10-18 松下電器産業株式会社 Semiconductor light emitting device, method of manufacturing the same, lighting device and display device
DE102004021233A1 (en) 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh LED array
DE102004036157B4 (en) 2004-07-26 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Electromagnetic radiation emitting optoelectronic component and light module
EP1878062A2 (en) 2005-04-28 2008-01-16 Koninklijke Philips Electronics N.V. Light source comprising led arranged in recess
JP4791462B2 (en) 2005-05-30 2011-10-12 京セラ株式会社 Liquid crystal display
WO2006132148A1 (en) * 2005-06-07 2006-12-14 Fujikura Ltd. Porcelain enameled substrate for light-emitting device mounting, light-emitting device module, illuminating device, display and traffic signal device
JP2007067216A (en) 2005-08-31 2007-03-15 Sanyo Electric Co Ltd Semiconductor device and manufacturing method thereof, and circuit board and manufacturing method thereof
JP2007165507A (en) * 2005-12-13 2007-06-28 Fujikura Ltd Substrate for mounting light emitting element and its manufacturing method, and light emitting element module, display device, lighting device, and traffic signal
DE102006015335B4 (en) 2006-04-03 2013-05-02 Ivoclar Vivadent Ag Semiconductor radiation source and light curing device
KR100854328B1 (en) * 2006-07-07 2008-08-28 엘지전자 주식회사 LED package and method for making the same
JP5102051B2 (en) * 2007-01-18 2012-12-19 シチズン電子株式会社 Semiconductor light emitting device
TW200924218A (en) 2007-11-16 2009-06-01 Bright Led Electronics Corp Packaging device of series- and parallel-connected LED and a light emitting device therewith
WO2009069671A1 (en) * 2007-11-29 2009-06-04 Nichia Corporation Light-emitting device and its manufacturing method
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof
US8067777B2 (en) 2008-05-12 2011-11-29 Occam Portfolio Llc Light emitting diode package assembly
JP5236070B2 (en) 2008-05-13 2013-07-17 シーメンス アクチエンゲゼルシヤフト LED array
JP4544361B2 (en) * 2008-11-26 2010-09-15 日亜化学工業株式会社 Light emitting device
JP4808244B2 (en) * 2008-12-09 2011-11-02 スタンレー電気株式会社 Semiconductor light emitting device and manufacturing method thereof

Patent Citations (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938178A (en) * 1971-12-22 1976-02-10 Origin Electric Co., Ltd. Process for treatment of semiconductor
US20020079506A1 (en) * 1997-09-01 2002-06-27 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6674097B2 (en) * 1997-09-01 2004-01-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US20060128059A1 (en) * 1998-08-31 2006-06-15 Micron Technology, Inc. Compact system module with built-in thermoelectric cooling
US20020021871A1 (en) * 2000-07-18 2002-02-21 Albert Auburger Optoelectronic surface-mountable module and optoelectronic coupling unit
US20070090383A1 (en) * 2000-12-28 2007-04-26 Toyoda Gosei Co., Ltd. Light emitting device
US20030081384A1 (en) * 2001-10-31 2003-05-01 Rider Jerald Ray Method for increasing the dielectric strength of isolated base integrated circuits used with variable frequency drives
US20060000591A1 (en) * 2002-04-17 2006-01-05 Adams Richard W Metal matrix composite structure and method
US20050218531A1 (en) * 2002-06-28 2005-10-06 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing it
US20140001626A1 (en) * 2002-10-18 2014-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor apparatus and fabrication method of the same
US20040079941A1 (en) * 2002-10-18 2004-04-29 Shunpei Yamazaki Semiconductor apparatus and fabrication method of the same
US20060263003A1 (en) * 2003-11-27 2006-11-23 Ibiden Co., Ltd. Substrate for mounting IC chip, substrate for motherboard, device for optical communication, manufacturing method of substrate for mounting IC chip, and manufacturing method of substrate for motherboard
US7420218B2 (en) * 2004-03-18 2008-09-02 Matsushita Electric Industrial Co., Ltd. Nitride based LED with a p-type injection region
US20120322178A1 (en) * 2004-09-13 2012-12-20 Osram Opto Semiconductors Gmbh Method of Producing a Radiation-Emitting Optoelectronic Component
US7745832B2 (en) * 2004-09-24 2010-06-29 Epistar Corporation Semiconductor light-emitting element assembly with a composite substrate
US20110057205A1 (en) * 2004-11-15 2011-03-10 Koninklijke Philips Electronics N.V. Led with phosphor tile and overmolded phosphor in lens
US20090050907A1 (en) * 2005-01-10 2009-02-26 Cree, Inc. Solid state lighting component
US20120241781A1 (en) * 2005-01-10 2012-09-27 Cree, Inc. Solid state lighting component
US20080303038A1 (en) * 2005-02-28 2008-12-11 Stefan Grotsch Module Comprising Radiation-Emitting Semiconductor Bodies
US20120110842A1 (en) * 2005-06-27 2012-05-10 Mazzochette Joseph B Led package with stepped aperture
US20070075325A1 (en) * 2005-10-04 2007-04-05 Samsung Electro-Mechanics Co., Ltd. High power light emitting diode package
US20070228386A1 (en) * 2006-03-30 2007-10-04 Jin-Shown Shie Wire-bonding free packaging structure of light emitted diode
US20090279300A1 (en) * 2006-05-31 2009-11-12 Denki Kagaku Kogyo Kabushiki Kaisha Led light source unit
US20100044746A1 (en) * 2006-12-21 2010-02-25 Koninklijke Philips Electronics N.V. Carrier and optical semiconductor device based on such a carrier
US20110278627A1 (en) * 2006-12-21 2011-11-17 Geun-Ho Kim Light emitting device package and method for manufacturing the same
US20100283064A1 (en) * 2006-12-22 2010-11-11 Qunano Ab Nanostructured led array with collimating reflectors
US20120104618A1 (en) * 2006-12-28 2012-05-03 Yusuke Yasuda Low temperature bonding material and bonding method
US20100027261A1 (en) * 2007-01-30 2010-02-04 Denki Kagaku Kogyo Kabushiki Kaisha Led light source unit
US20080231169A1 (en) * 2007-03-23 2008-09-25 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same
US8409930B2 (en) * 2007-03-27 2013-04-02 Oki Semiconductor Co., Ltd. Semiconductor device manufacturing method
US20080247703A1 (en) * 2007-04-04 2008-10-09 Ibiden Co., Ltd Substrate for mounting ic chip and device for optical communication
US8053787B2 (en) * 2007-06-28 2011-11-08 Wen-Chin Shiau Lamp seat for a light emitting diode and capable of heat dissipation, and method of manufacturing the same
US8513682B2 (en) * 2007-12-21 2013-08-20 Osram Opto Semiconductors Gmbh Optoelectronic component and production method for an optoelectronic component
US20090179207A1 (en) * 2008-01-11 2009-07-16 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8535985B2 (en) * 2008-03-25 2013-09-17 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a bump/base heat spreader and an inverted cavity in the bump
US20110132644A1 (en) * 2008-05-29 2011-06-09 Taiki Nishi Metal base circuit board
US20120153316A1 (en) * 2008-06-30 2012-06-21 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
US20100060157A1 (en) * 2008-09-10 2010-03-11 Wei Shi Phosphor layer arrangement for use with light emitting diodes
US20130069089A1 (en) * 2008-11-18 2013-03-21 Cree, Inc High Efficacy Semiconductor Light Emitting Devices Employing Remote Phosphor Configurations
US20100140780A1 (en) * 2008-12-10 2010-06-10 Stats Chippac, Ltd. Semiconductor Device and Method of Forming an IPD Beneath a Semiconductor Die with Direct Connection to External Devices
US20130207247A1 (en) * 2008-12-10 2013-08-15 Stats Chippac, Ltd. Semiconductor Device and Method of Forming a Shielding Layer Over a Semiconductor Die After Forming a Build-up Interconnect Structure
US20100181589A1 (en) * 2008-12-11 2010-07-22 Huang Tien-Hao Chip package structure and method for fabricating the same
US20110303945A1 (en) * 2009-02-12 2011-12-15 Osram Opto Semiconductors Gmbh Semiconductor arrangement and method of producing a semiconductor arrangement
US20110278624A1 (en) * 2009-02-17 2011-11-17 Ki Myung Nam Substrate for an optical device, an optical device package comprising the same and a production method for the same
US20130126928A1 (en) * 2009-02-19 2013-05-23 Lite-On Technology Corp. Light emitting diode chip, and methods for manufacturing and packaging the same
US20100213479A1 (en) * 2009-02-24 2010-08-26 Industrial Technology Research Institute Light emitting diode package structure
US20100224858A1 (en) * 2009-03-06 2010-09-09 Advanced Optoelectronic Technology Inc. Lateral thermal dissipation led and fabrication method thereof
US8278681B2 (en) * 2009-04-09 2012-10-02 Lextar Electronics Corp. Light-emitting diode package and wafer-level packaging process of light-emitting diode
US20100258827A1 (en) * 2009-04-09 2010-10-14 Lextar Electronics Corp. Light-emitting diode package and wafer-level packaging process of light-emitting diode
US20130252357A1 (en) * 2009-06-10 2013-09-26 Bridgelux, Inc. Thin-film led with p and n contacts electrically isolated from the substrate
US20110001148A1 (en) * 2009-07-06 2011-01-06 Zhuo Sun Thin flat solid state light source module
US20120132947A1 (en) * 2009-07-15 2012-05-31 Osram Opto Semiconductors Gmbh Light-emitting diode and method for producing a light-emitting diode
US8723192B2 (en) * 2009-08-07 2014-05-13 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component
US20120164767A1 (en) * 2009-08-18 2012-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of manufacturing a light emission device based on light emitting diodes
US20110042699A1 (en) * 2009-08-24 2011-02-24 Samsung Electro-Mechanics Co., Ltd, Substrate for light emitting diode package and light emitting diode package having the same
US20130299982A1 (en) * 2009-09-23 2013-11-14 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Interposer with Opening to Contain Semiconductor Die
US20110090691A1 (en) * 2009-10-15 2011-04-21 Joshua Josiah Markle Lamp assemblies and methods of making the same
US20120223416A1 (en) * 2009-11-13 2012-09-06 Osram Opto Semiconductors Gmbh Thin-film semiconductor component with protection diode structure and method for producing a thin-film semiconductor component
US20110170303A1 (en) * 2010-01-14 2011-07-14 Shang-Yi Wu Chip package and fabrication method thereof
US20110267557A1 (en) * 2010-01-29 2011-11-03 Nitto Denko Corporation Back light and liquid crystal display device
US20110220955A1 (en) * 2010-03-09 2011-09-15 Kyung Wook Park Light emitting device
US20120199843A1 (en) * 2010-04-09 2012-08-09 Cree, Inc. High reflective board or substrate for leds
US20110254039A1 (en) * 2010-04-15 2011-10-20 Kyu Sang Kim Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package
US20110284887A1 (en) * 2010-05-21 2011-11-24 Shang-Yi Wu Light emitting chip package and method for forming the same
US20110298110A1 (en) * 2010-06-04 2011-12-08 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Thermally Conductive Layer Between Semiconductor Die and Build-Up Interconnect Structure
US8890306B2 (en) * 2010-07-07 2014-11-18 Osram Opto Semiconductor Gmbh Light-emitting diode
US9190394B2 (en) * 2011-09-29 2015-11-17 Osram Opto Semiconductors Gmbh LED module
US9362335B2 (en) * 2011-12-22 2016-06-07 Osram Opto Semiconductors Gmbh Display device and method for producing a display device
US20140369045A1 (en) * 2012-01-03 2014-12-18 Koninklijke Philips N.V. Lighting Assembly, a Light Source and a Luminaire
US20130215613A1 (en) * 2012-02-17 2013-08-22 Tsmc Solid State Lighting Ltd. Led packaging structure having improved thermal dissipation and mechanical strength
US20130241040A1 (en) * 2012-03-14 2013-09-19 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20150108531A1 (en) * 2012-05-07 2015-04-23 Osram Optp Semiconductors Gmbh Method of producing a component carrier, an electronic arrangement and a radiation arrangement, and component carrier, electronic arrangement and radiation arrangement
US9379161B2 (en) * 2013-02-12 2016-06-28 Osram Opto Semiconductors Gmbh Monolithic semiconductor chip array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431378B2 (en) * 2010-07-07 2016-08-30 Osram Opto Semiconductors Gmbh Light-emitting diodes
US10381391B2 (en) * 2015-05-13 2019-08-13 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

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DE102010026344A1 (en) 2012-01-12
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KR20130119908A (en) 2013-11-01
US20130207133A1 (en) 2013-08-15
JP2013530541A (en) 2013-07-25
TW201205771A (en) 2012-02-01
WO2012004049A1 (en) 2012-01-12
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CN103026488A (en) 2013-04-03
TWI525789B (en) 2016-03-11

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