TW201123407A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- TW201123407A TW201123407A TW099130023A TW99130023A TW201123407A TW 201123407 A TW201123407 A TW 201123407A TW 099130023 A TW099130023 A TW 099130023A TW 99130023 A TW99130023 A TW 99130023A TW 201123407 A TW201123407 A TW 201123407A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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Landscapes
- Engineering & Computer Science (AREA)
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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- Wire Bonding (AREA)
Description
201123407 六、發明說明: 【發明所屬之技術領域】 本發明係關於半導體裝置。 【先前技術】 由於電子機器之小型化、輕量化、高性能化之要求而開發 了多晶片技術。將複數之半導體元件料單—封伽態的半 導體裝置,使其對電子顧祕__小,並縮短各半導 體元件之料㈣,藉此讀雜_如參㈣射 2、3)。 服1示 /知,半導體裝置與引線框架之⑽端子的接合, 猎金線所接合(例如參照專利文獻3之段^ 〇015)。 $ 4以來’積體電路、二極體、電晶體等之半導體 =置主要藉由半導體密封㈣氧樹脂組成物之硬化物所密 封。尤其在積體電路中,係 u 你使用凋配了環氧樹脂、酚樹脂系 更化诏及無機填充材,且耐埶 田卢备了…〖生耐濕性優越的半導體密封 用衣氧树月曰組成物。近年來 、隹麻y 干术在+導體元件之高積體化逐年 進展,且促進半導體裴置 密封t表面*裝化中,料導體元件之 吏用的+導體密封用環氧樹腊組成物的要求變得曰 對於使用了多晶片拮 嚴苛要求的對應之〜^日料置的應用亦為對此種 件者的流路狹窄而複雜=片型中尤其是積層了半導體元 ”成形時之半導體密封用環氧樹脂組 099130023 201123407 環氧樹脂組 成物的流動限制大。因此,有發生半導體密封用 成物之未填充的問題。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2005_340766號公報 [專利文獻2]日本專利特開2〇〇6_〇19531號公報 [專利文獻3]曰本專利特開2〇〇7_134486號公報 [專利文獻4]日本專利特開2〇〇1 151866號公報 【發明内容】 (發明所欲解決之問題) 本發明提供一種半導體裝置,其係半導體密封用環氧±匕 組成物之未填充的發生較少、可靠性優越。 —十月g (解決問題之手段) 本發明係如以下所述。 [1] 一種半導體裝置,係於引線框架上積層搭戴2個以上之一 導體元件’將上述引線框架與上述半導體元 之半 τ ^導線予以雷 性接合,將上述半導體元件與上述導線與電性接合部藉半導 體密封用環氧樹脂組成物之硬化物密封而成者; 上述半導體密封用環氧樹脂組成物係含有(Α)環氧樹脂、 (Β)硬化劑、(C)無機填充材; 上述(C)無機填充材係含有最薄填充厚度之2/3以下之粒 099130023 5 201123407 徑的粒子99.9質量%以上。 [2] 如[1]之半導體裝置,其中,藉由積層上述半導體元件以 設置空隙部,於上述空隙部中填充上述半導體密封用環氧樹 脂組成物之硬化物,構成具有最薄之上述填充厚度的填充 部。 [3] 如[2]之半導體裝置,其中,上述半導體元件與上述半導 體元件之間的上述空隙部、或上述半導體元件與上述引線框 架之間的上述空隙部中,積層方向上最薄厚度係相當於最薄 之上述填充厚度。 [4] 如[1]至[3]項中任一項之半導體裝置,其中,上述導線為 銅製導線。 [5] 如[1]至[4]項中任一項之半導體裝置,其係於上述引線框 架經由間隔件積層搭載上述半導體元件者,上述(C)無機填 充材係含有上述間隔件厚度之2/3以下之粒徑的粒子99.9 質量%以上。 [6] 如[1]至[5]項中任一項之半導體裝置,其中,上述(C)無機 填充材含有二氧化矽。 099130023 6 201123407 m 如[1]至[6]項中任一項之半導體裝置,其中,將上述引線 框架與上述半導體元件藉上述導線之反向焊接進行電性接 合。 [8] 如[4]之半導體裝置,其中,上述銅製導線之銅純度為99.99 質量%以上。 [9] 如[4]或[8]之半導體裝置,其中,上述銅製導線係於其表 面具有由含把之金屬材料所構成的被覆層。 [10] 如[9]之半導體裝置,其中,上述被覆層之厚度為0.001/mi 以上且0.02μιη以下。 [11] 如[5]之半導體裝置,其中,上述間隔件之厚度為0.01mm 以上且0.2mm以下。 (發明效果) 依照本發明,可得到半導體密封用環氧樹脂組成物之未填 充發生較少、可靠性優越的半導體裝置。 【實施方式】 上述目的及其他目的、特徵以及優點,將藉由以下所述之 較佳實施形態、及隨附的以下圖式進一步闡明。 099130023 7 201123407 以下,詳細說明本發明之半導體裝置。本發明之半導體裝 置係於引線框架上積層搭載2個以上半導體元件,將引線框 架與半導體元件藉導線予以電性接合,將半導體元件與導線 與電性接合部藉本發明之半導體密封用環氧樹脂組成物的 硬化物㈣而成者,半導體密封料氧樹餘成㈣含有(A) 環氧樹脂、⑻硬化劑、(C)無機填充材,(C)無機填充材係含 有最薄填充厚度之2/3以下之粒徑的粒子99 9質量%以上, 屬於半導體密封用環氧樹脂組成物之未填充發生較° 少的可 靠性優越的半導體裝置。 以下,針對各構成進行詳細說明。 首先,說明本發明之半導體裝置所使用的導線。導線係用 於將引線框架、與搭載於引線㈣上之半導體元件進行電性 連結。於半導料狀賴巾,偶了提升频以要求狹 窄之焊塾間距、較小導線徑,具體而言,係要求3〇脚以下、 更佳25卿以下之導線徑。導線並無特別限定 ::金導=、銅合金等。又,特性、低成本= 而&,導線較佳係以銅作為主成分。 本發明之半導體裝置中可使用的銅製導線,係%卿以 :以下之導線徑,且較佳為—乂上的導線 P右為此_,則銅製導線前端的球形狀技,可 合,分之連接可靠性。又’藉由使用铜製導線作為導線 可精銅製導線本身的硬度減低導線流動。 099130023 201123407 本發明之銅製導線並無特別限定,較佳係銅純度"%質 里/〇以上更佳99.999質量%以上。—般藉由對銅添加各種 元素(摻雜物)’可達到接合時之銅製導線前端的球側形狀安 定化’但若添加大於〇〇1質量%的大量摻雜物,則於導線 接合時因球部分變硬而對半導體元件之電極墊側造成損 傷,而發生起因於接合;^足以愧可#性降低、高溫保管特 性降低、電阻值增大等不良情況。相對於此,若為銅純度 99.99質量%以上之銅製導線,則由於球部分具有充分的柔 軟性,故沒有於接合時對墊側造成損傷之虞。又,本發明之 半導體裝置中可使用_製導線,係藉由於芯線之銅中摻雜 例如 0.001 〜0.003 質晋 c _ , 負里/〇之Ba、Ca、Sr、Be、A1或稀土族 金屬等摻雜物,而進―步改树形狀與接合強度。 本發明之銅製導線並麟縣定’較佳係於其表面具有由 3把之金屬材料所構成的被覆層^此被覆層較佳係至少被覆 接口 4刀之銅製導線前端的整面,更佳係被覆銅製導線整體 的整面。藉此’可使崎導線前端的球形狀安定,提升接合 部分之連接可靠性。又,亦可得到防止芯線之銅之氧化劣化 的效果’可提升接合部分之高溫保管特性。 :為本發明之銅製導線中由含纪之金屬材料所構成的被 覆層的厚度,較佳為咖〜叫m、更佳議5〜_5帅(以 下’在未特別明示下,「〜」表示包括上限值與下限值)。若 超過上述上限值’則導料接時,騎摘與被覆材中含免 099130023 201123407 之金屬㈣未充紐合而使球形狀衫定,有接合部分之耐 濕性、高溫保管特性降低之虞。又,若低於上述下限值,則 無法充諸m之鋪氧化魏,同樣地有接合部分之财 濕性、尚溫保管特性降低之虞。 本發明之銅料、㈣於轉料魏合金,料鑄塊進行 幸把軋再使用模具進行拉線加工,一邊連續地對導線進行掃 動拉引]—邊實施加熱之後熱處理則可獲得。又,本發明之 被覆層係事先準備所需導線徑之線’將其浸潰於含纪之電解 液或,,.、電解/合液中,予以連續掃動拉引並鑛敷,藉此可形 成。此時’本發明之被覆層厚度可藉由掃動㈣速度進行調 ,村採取準備較所絲之線,將其浸潰於電解溶液 或…、電解溶液中並予以連續掃動拉引而形成被覆層,再進行 拉線至既定直徑為止的手法。 接著,說明本發明之半導體裝置中所使用之半導體密封用 環氧樹脂組成物。本發明之半導體密封用環氧樹脂組成物係 含有⑷環氧樹脂、⑼硬化劑、(C)無機填充材,(〇無機填 充材係含有最薄填充厚度之2/3以下之粒徑的粒子99 9質 量如上者。以下,針對本制之半物密制環氧樹脂組 成物之各構成成分進行說明。 本發明之半導難封用縣樹職成財,可使用⑷環 氧樹脂。⑷環氧樹脂係於1分子内具有2個以上環氧基之 所有單體、寡聚物、聚合物,其分子量、分子構造並無特別 099130023 10 201123407 =定’可舉例如:聯笨型環氧樹脂、雙紛型環氧樹脂、装型 %氧樹脂等之結晶性環氧樹脂;酚酚醛清漆型 盼祕清漆型環氧樹脂等之祕清漆型環氧樹脂;三紛甲燒 型環氧樹脂、烷基改質三酚曱烷型環氧樹脂等之多官能環^ 樹脂;具有伸苯基骨架之盼芳院基型環氧樹脂、具有伸聯笨 2架=純基型環氧樹脂等之雜基型環氧樹脂;二趣 土奈型氧樹脂、使二㈣萘之二聚體、經環氧丙基醚化而得 =氧^旨等之⑽型環氧樹脂;三環氧丙基三聚異氛賤 r .早二基一%乳丙基三聚異氰酸酯等之含三啩核環氧樹 二::氣7文質_氧樹脂等之有橋環狀煙· 二細脂;此等可單獨使用1種,亦可併用2種以上。 ()衣氧樹月曰整體之調配比例的下限值並無特別限定,係 ^。本1明之半導體密封用環氣樹脂組成物整體,較佳為 μ二Γ上、更佳5質量7❶以上。若(A)環氧樹脂整體之調 Π、上述乾圍内’則因黏度上升而引起導線斷裂的疑慮 二。又’(Α)環氧樹脂整體之調配比例之上限值並無特別 =二係相對於本發明之半導體密環氧_組成物整 樹_之調配::之= 上丨民值為上述範圍内,則因吸水率增 加而引起耐濕可靠性之降低等的疑慮較少。 月之半導體密封用環氧樹脂組成物中,可使用⑼硬 化劑。作為(Β)硬化劑’可大致分為例如聚加成型之硬化劑、 099130023 201123407 觸媒型之硬化劑、縮合型之硬化劑等3類型。 作為聚加成型之(B)硬化劑’可舉例如:二乙三胺 (DETA)、三乙四胺(TETA)、間二甲苯二胺(MXDA)等之脂肪 族多胺’二胺基二苯基曱烷(DDM)、間苯二胺(]^[1>1)入)、二 胺基二苯基礙(DDS)等之芳香族多胺,含有二氰二醯胺 (DICY)、有機酸二醯肼等之多胺化合物;包括六氫酞酸酐 (HHPA)、曱基四氫酞酸酐(MTHPA)等之脂環族酸酐、 苯二曱酸酐(TMA)、1,2,4,5-苯四甲酸酐(PMDA)、二苯基酮 四羧酸(BTDA)等之芳香族酸酐等之酸酐;酚醛清漆型酚樹 脂、酚聚合物等之多酚化合物;多硫化物、硫酯、硫醚等之 多硫醇化合物;異氰酸酯預聚物、嵌段化異氰酸酯等之異氰 酸酯化合物;含羧酸之聚酯樹脂等之有機酸類等。 作為觸媒型之(B)硬化劑,可舉例如苄基二曱基胺 (BDMA)、2,4,6-參(二曱基胺基甲基)酚(DMp_3〇)等之3級胺 化s物,2-曱基咪嗤、2-乙基-4·甲基σ米嗤(EMI24)等之味嗅 化合物;BF3錯合物等之路易斯酸等。 作為縮a型之(Β)硬化劑,可舉例如盼越清漆型紛樹脂、 聽樹脂等之_料、硬化劑;含經曱基之展素樹 月曰般之尿素樹脂;錢曱基之三聚氰胺麟般之三聚氣胺樹 脂等。 此等之中,由财燃性、耐濕性、電特性、硬化性、保存安 定性等之均衡的觀點而言’較佳為盼樹脂系硬化劑。紛樹脂 099130023 12 201123407 系硬化劑係於一分子内具有2個以上酚性羥基之所有單 體、寡聚物、聚合物’其分子量、分子構造並無特別限定, 可舉例如:酚酚醛清漆樹脂、甲酚酚醛清漆樹脂等之酚醛清 漆型樹脂;踢曱烧型_脂等之多官能型㈣脂;結稀改 質紛樹脂、二環戊二烯改質齡樹脂等之改質紛樹脂;具有伸 苯基骨架及/或伸聯笨基骨架之酚芳烷基樹脂、具有伸苯基 及/或伸聯苯基骨架之萘酚芳烷基樹脂等之芳烷基型樹脂; 雙酚A、雙酚F等之雙酚化合物;此等可單獨使用丨種,亦 可併用2種以上。 關於(B)硬化劑整體之調配比例的下限值並無特別限定, 相對於本發明之半導體密封用環氧樹脂組成物整體,較佳為 〇·8 i里/〇以上、更佳ι·5質量%以上。若調配比例之下限值 為上述範圍内,可得到充分的流動性。又,關於(Β)硬化劑 整體之調配比例的上限值,並無特別限定,係相對於本發明 之半導體密封用環氧樹脂組成物整體,較佳為16質量%以 下、更佳14質量%以下。若調配比例之上限值為上述範圍 内,則因吸水率增加而引起耐濕可靠性降低等的疑虞較少。 另外,在使用酚樹脂系硬化劑作為硬化劑(Β)的情況,作 為%氧樹脂與酚樹脂系硬化劑之調配比例,較佳係總環氧樹 脂之裱氧基數(ΕΡ)與總酚樹脂系硬化劑之酚性羥基數(〇Η) 的當量比(ΕΡ)/(0Η)為0.8以上且! .3以下。若當量比為此範 圍,則發生本發明之半導體密封用環氧樹脂組成物之硬化性 099130023 13 201123407 降低、或本發明之半導體密封用環氧樹脂組成物之硬化物物 性降低等的疑虞較少。 本杳明之半導體密封用環氧樹脂組成物係含有(c)無機填 充材,(c)無機填充材可使用含有最薄填充厚度之2/3以下 之粒t的粒子99.9質量%以上者。藉由使用此範圍者,則 亦可應用至積層了半導體元件之半導體裝置、導線間距狹窄 的半導體裝置中。藉由成為此範圍,可抑制半導體密封用環 氧樹脂組成物之未填充或粗大粒子炎在導線間而推擠的導 線抓動。此種無機填充材係將市售之無機填充材直接、或混 合複數種,予以筛分等,藉此進行調整而獲得。又,本發明 所使用之無機填充材之粒度分佈,可使用市售之雷射式粒度 刀佈计(例如,島孝製作所(股)製sald_7⑼〇等)而測定。於 此最4填充厚度仙當於積層半導體元件賴形成之空隙 部之積層方向之厚度中最薄的厚度,例如,較佳係相當於經 由間隙件所積層之2個半導體元件間之空隙部之積層方向 之厚度中最’#的厚度’或經積層之半導體元件與引線框架間 之空隙部之積層方向之厚度中最薄的厚度。 於此’專利文獻4中記載有_種密封用環氧樹脂成形材 料’係於-般的半導财置中,無機填充劑為粒徑1〇_ 以上之成分為ο·1重量%以下的熔融二氧化矽。 相對於此’經本發明者檢討的結果,判明了在積層半導體 元件時所形成的空隙部(例如,經由間隔件所積層之2個半 099130023 201123407 導體元件之間的空隙部,或於半導體元件與引線框架之間的 空隙部)中,上述專利文獻4記載之無機填充劑將有填充性 不足的情形。因此,相對於該空隙部之積層方向之厚度中最 薄的厚度(最薄填充厚度)’將較最薄填充厚度之2/3大之粒 徑的(c)無機填充材設為未滿〇丨質量%,則可得到未填充之 發生較少且可靠性優越的半導體裝置。 於此,專利文獻3中係使用強度較銅線低之金線作為導 線。一般而言,若減小無機填充劑之粒徑,則密封樹脂的黏 度變高。因此,於專利文獻3,在以含無機填充劑之密封樹 月曰進仃密封時,若減小無機填充劑之粒徑,财導線流動率 降低之虞。 十於此,本發明中’(C)無機填充材為使用含有最薄填 充厚度之2/3以下之粒徑的粒子99 9質量%以上者,並適當 選擇導線之材料體或導線徑’藉此可提升填充性,亦得到: 線流動率優越料賴裝置。又,尤其枝由❹強度較金 製導線高之哺導線作為導線,料得科線流動率更優 越、狹間距性更優越的半導體裝置。 作為⑹無機填充材,可使用一般之半導體 =物所使用者。可舉例如溶融球狀二氧切、二 2切、結晶二氧切、滑石、氧她、鈦白、氮切等。 特佳為_球狀二氧切。作桃)無機填充材,可 早用此等之1種或併用2種以上。又,作為(C)無機填 099130023 15 201123407 充材之形狀’為了抑制本發明之半導體密封用環氧樹脂組成 物之熔融黏度上升,並提高(c)無機填充材之含量,較佳係 儘可能為真球狀,且粒度分佈寬廣。χ,亦可藉偶合劑對J) 無機填充材進行表面處理。再者,視需要亦可事先對(〇無 機填充材藉環氧樹脂或酚樹脂進行處理。作為處理之方法, 有如使用溶媒予以混合後再去除溶媒的方法,或直接添加至 無機填充材,使用混合機進行混合處理的方法等。 則相對於本發明之半導體㈣用環氧樹脂組成 、更佳65質量%以上。若為
099130023 (C)無機填充材之含有比例並無限定,若考慮到本發明之 半導體密封用環氧樹餘成物m本發明之半導體裝 物整體,較佳為60質量%以上 不小於上述下限值之範圍,則d 脹性,故射湛^蚩丁 D,, . 體雄、封用環氧樹脂組成物所使用者。 16 201123407 Z舉彳Η 1,1一吖雙環(5,4,〇)十一烯_7等之二吖雙環烯及其 何,物’二笨基膦、甲基二苯基膦等之有機膦類;2-甲基咪 °坐等之味旬b合物;四苯基鱗·四苯基硼酸S旨等之四取代 釦四取代娜酸酷;膦化合物與酿化合物之加成物等;此等 可單獨使用1種,亦可併用2種以上。 作為硬化促進狀職比例的下限值並無㈣限定,相對 ^本發明之半導體密封料氧樹脂組成物整體,較佳為〇.〇5 質罝%以上、更佳質量%以上。若硬化促進劑之調配比 例之下限料上述範_ ’則引起硬錄降低岐虞較少。 又,作為硬化促進劑之調配比例的上限值並無特別限定,相 對於半導體密封用環氧樹脂組成物整體,較佳為!質量%以 下、更佳G.5質量%以下。若硬化促進劑之調配比例之上限 值為上述範圍内,則引起流動性降低之疑慮較少。 本發明之半導體密封用環氧樹脂纽成物中,視需要可進一 步適當調配氫氧化錯等之銘防腐劑;氧化叙水合物等之無機 離子交換體;γ·環氧丙氧基丙基三甲氧基㈣、3_絲丙基 三甲氧基石夕烧、3-胺基丙基三甲氧基石夕烧等之偶合劑;碳 黑、鐵丹等之著色劑;聚錢橡膠等之低應力成分;巴西標 櫊躐等之天輯、合成躐'硬脂酸鋅等之高級脂肪酸及其金 屬鹽類或石壤等之脫模劑;抗氧化劑等之各種添加劑。 本發明之半導體密封用環氧樹月旨組成物,係將上述各成分 例如使用混合II等進行常溫混合者,再於其後,叫、捏合 099130023 17 201123407 機 、擠出機等之混練機 喷仃熔融混練,冷卻後予以粉碎去 等,視需要可使用經適去 千考 ^ u _ 田5周整了分散度或流動性等者。 其二人,S兒明本發明之丰 下爷體裝置的構造。圖1及圖2糸主 示使用本發明之半導體 圓 口為表 „ 1ΛΛ , 在封用環氧樹脂組成物之半導體妒 置10Θ—例的剖面圖。本 賵裝 積層搭載2個以上半導^明之半導體裝置係於引線框架上 導線予以紐接合喷切 躬丨線框雜抖體元件以 發明之半導體密封用 、树知組成物之硬化物密封而成。 即’圖1所示之本發明之主 兀 半導體裝置1〇〇中,係於引線樞架 10之晶粒座3上’經由接_層2固定半導體膽i。積展 於此半導體兀件1上,經由間隔件7固定半導體元件^ 將此等半導體元件卜1!之電極塾與引線框架1()之弓j線部 5藉導線4進行電性連接。半導體元件卜u係由本發明之 半導體密封用樹脂組成物之硬化體6所密封。此半導體骏置 100中,藉由經由間隔件7於半導體元件丨上積層半導體元 件11’而於半導體元件1與半導體元件丨丨之間設置空隙部& 於此空隙部中填充本發明之半導體密封用環氧樹脂組成物 之硬化物(硬化體6),構成具有最薄填充厚度匕之填充部。 又’於半導《置1GG巾,最薄填充厚度L仙當於間隔 件7之積層方向之厚度中的最薄厚度。 於此,間隔件7之積層方向之厚度並無特別限定,較佳為 0.01mm以上且〇.2mm以下,更佳〇 〇5mm以上且〇」5mm 099130023 18 201123407 以下。 另外,圖2所示之本發明之半導體裝置1〇〇中,係於弓丨線 框架8上,經由接黏劑層2固定半導體元件1。於此半導體 元件1上予以懸突(overhang)積層,經由接黏劑層12固定半 導體元件11。將此等半導體元件1、11之電極塾與引線才匡 架8、9藉導線4進行電性連接。半導體元件1、u係藉本 發明之半導體密封用樹脂組成物之硬化體6所密封。此半導 體裝置100中,經懸突而於半導體元件1上積層半導體元件 11,藉此於半導體元件11與引線框架8之間設置空隙部, 於此空隙部中填充本發明之半導體密封用環氧樹脂組成物 之硬化物(硬化體6),構成具有最薄填充厚度L之填充部 又,於半導體裝置Η)()巾,最薄填充厚度L係相當於=積 層之半導體it件11與引線框架8之空隙部於積層方向之厚 度中的最薄厚度。 如此’作為以本發明之半導體密封用環氧樹脂組成物進行 密封的半導體元件,並無特別限定’可舉例如積體電路、订 規模積體電路、固體攝像元件等。作為半導體雙置 態,可舉例如TSOP、QFP等。帛!段之半導體元件係= 薄膜接黏劑、熱硬化性接黏劑等而接黏於引線框穴 ⑽㈣上。第2段之後的半導體元件係藉絕緣性之$ = 黏劑予以依序積層。為了防止導線與半導體元件之干、夺、 觸’可將第2段之後的半導體元件懸突(使半導體_朱 099130023 19 201123407 邰刀未接黏)接黏,亦可經間隔件予以接黏。由應力緩和之 觀點而&,間隔件較佳係熱膨脹率與半導體元件接近者。上 述中’將第2段之後之半導體元件料㈣(使半導體元件 之一部分未接黏)接黏時的接黏劑周邊部,以及經由間隔件 接黏時之間隔件周邊部,係相當於在引線框架上積層搭载了 2個以上半導體元件之半導體裝置中的最薄填充厚度。 引線框架之引線部與半導體元件較佳係藉導線之反向焊 接予以接合。反向焊接時,首先於半導體元件之墊部上接合 ,成於導線前端的焊球,切斷導線而形成縫焊用之凸塊。接 著子引線框木之經金屬鍍敷的框架部,接合形成於導線前端 的焊球’並縫焊至半導體元件的凸塊。反向焊接時,由於可 較正向焊接更加減低半導體元件上的導線高度,故可減低半 導體元件的接合高度。 ^ Θ之半導體裝置’係使用本發明之半導體密封用環氧 / ’成%對半導體元件等之電子零件進行密封,藉轉移 #、製C縮模製、射出模製等之習知成形方法進行硬化成形 而獲得°藉轉移㈣等成形方法所密封的半導财置,較佳 係直接’或以8(TC〜200t:左右之溫度,歷日夺1〇分鐘〜1〇小 時左右的時間使其完全硬化後,搭載於電子機器上。 上’依照本發明,由於可得到本發明之半導體密封用 :氧^旨Μ成物之未填充發錢少、可靠性優越的半導體裝 置’故適合❹於流路狹轉雜之多Μ型之半導體裝置, 099130023 201123407 尤其是積層搭載了半導體元件的半導體裝置。 尚且’上述實施形態及複數之變形例當然可在不違反其内 容的範圍内進行組合。又,上述實施形態及變形例中,雖具 體說明了各部構造等,但其構造等係在滿足本案發明的範圍 内可進行各種變更。 (實施例) 以下表示本發明之實施例,但本發明並不限定於此等。調 配比例設為質量份。實施例、比較例中所使用之半導體密封 用環氧樹脂組成物的各成分,如以下所示。 半導體密封用環氧樹脂組成物之各成分: 鄰曱酚酚醛清漆型環氧樹脂(E-1 :曰本化藥(股)製, EOCN1020,軟化點55°C、環氧當量196) 具有伸聯苯基骨架之酚芳烷基型環氧樹脂(E-2:日本化藥 (股)製,NC3000,軟化點58°C、環氧當量274) 酚酚醛清漆樹脂(H-1 :住友BAKELITE(股)製,PR-HF-3, 軟化點80°C、羥基當量104) 具有伸聯苯基骨架之酚芳烷基樹脂(H-2 :明和化成(股) 製’ MEH-7851SS,軟化點65。(:、羥基當量203) 熔融球狀二氧化矽-1(電氣化學工業(股)製,FB-100X, ΙΟΟμηι以下之粒子比例:>99.9質量%,67μιη以下之粒子 比例:87.4質量%)
炫融球狀二氧化矽-2(電氣化學工業(股)製,將FB-100X 099130023 21 201123407 以300網目之篩經篩分者,67μιη以下之粒子比例:>99.9 質量%,33冲1以下之粒子比例:73 7質量0/〇) 溶融球狀二氧化矽-3(電氣化學工業(股)製,FB_5SDC, 33μηι以下之粒子比例:> 99 9質量%) 硬化促進劑:三苯基膦(ΤΡΡ) 石夕烧偶合劑:環氧矽烷(7-環氧丙氧基丙基三曱氧基矽烷) 著色劑:碳黑 脫模劑:巴西棕櫚蠟 填充性及導線流動率之評估中所使用的各半導體封裝: PKG-1 : 44pTSOP。封裝尺寸:18xi〇xl 0mm,42 合金引 線框架。架尺寸:5.0x8.5mm,第一段之晶片尺寸: 4.5x8.〇x〇.l〇mm。間隔件尺寸:3x5x〇15mm。第二段之晶 片尺寸:4.5><8,〇x〇.l〇mm。銅製導線:於Tatsuta電線(股) 製TC-E(銅純度99.99質量%,線徑25μηι)上實施了 0.01/mi 之把被覆者。晶片與引線係以反向焊接進行接合。 PKG-2 : 44pTSOP。封裝尺寸:18xi〇xi.〇mm , 42 合金引 線框架。架尺寸:5.0x8.5mm,第一段之晶片尺寸: 4.5x8.〇x〇.10mm。間隔件尺寸:3x5x〇.i〇mm。第二段之晶 片尺寸:4.5x8.〇x〇.10mm。銅製導線:於Tatsuta電線(股) 製TC-E(銅純度99.99質量%,線徑25μιη)上實施了 Ο.ΟΙμπι 之鈀被覆者。晶片與引線係以反向焊接進行接合。 PKG-3 : 44pTSOP。封裳尺寸:18xl〇xl.〇mm,42 合金引 099130023 22 201123407 線框架。架尺寸:5.〇x8 5min,第一段之晶片尺寸: 4.5x8.〇x〇.l〇mm。間隔件尺寸:3x5x〇〇5mm。第二段之晶 片尺寸:4.5><8.〇x〇.10inm。銅製導線:於Tatsuta電線(股) 製TC-E(銅純度99.99質量%,線徑25μπι)上實施了 001/xm 之鈀被覆者。晶片與弓丨線係以反向焊接進行接合。 PKG-4 : 44pTSOP。封裝尺寸:ι8χ1〇χ1 〇ππη,42 合金引 線框架。架尺寸.5.〇xg 5mm,第一段之晶片尺寸: 4.5x8.〇x〇.10mm。間隔件尺寸:3x5x〇 15mm。第二段之晶 片尺寸:4.5x8.〇x〇.l〇mm。金導線:Kulicke&s〇ffa,Ltd 製 AW66(金純度99.99質量〇/〇,線徑25jam)。晶片與引線係以 反向焊接進行接合。 PKG-5 : 44pTSOP。封裝尺寸:18xl〇xl 〇mm,42 合金弓丨 線框架。架尺寸:5 〇x8 5mm,第一段之晶片尺寸: 4.5x8.〇xG.lGmm。間隔件尺寸:3x5xQ 1Qrnm。第二段之晶 片尺寸.4.5x8.〇x〇.1〇mm。金導線:Kulicke&s〇ffa,Ltd 製
片與引線係以 反向焊接進行接合。 半導體⑽用環氧樹脂組成物之製造: (實施例1) E-1 H-1 溶融球狀二氧化石夕 12.43質量份 6.52質量份 80質量份 099130023 23 201123407 ΤΡΡ 0·15質量份 〇·2質量份 〇·3質量份 0·4質量份 環氧矽烷 碳黑 巴西棕櫚蠟 將上述者於常溫下使用混合器混合,接著於70〜100。0進 订輥混練,冷卻後予以粉碎得到半導體密封用環氧樹脂組成 物。 (實施例2〜5,比較例1〜2) 依照表1記載之半導體密封用環氧樹脂組成物配方,與實 施例1同樣地得到半導體密封用環氧樹脂組成物。〃 針對各實_及各比較例所得之半導體密封用環氧樹脂 組成物,進行以下評估。將所得結果示於表i。 評估方法 (半導體密封用環氧樹脂組成物之評估) 螺旋流動:使用低壓轉移成形機(Kohtaki精機(股)製, ^ )以EMMI-1-66為基準,於螺旋流動測定用的金屬 模具中’依金屬模具溫度175t、注人壓力6 9略、硬化 間12 G秒之條件注人半導體密封料氧樹脂組成物,測定 抓動長。早位為cm。若為8〇細以下,則有產生封裂未填 充專成形不良的情形。 、 (半導體封裝之評估) 填充[生·使用低壓轉移自動成形機(第-精工製, 099130023 24 201123407 gp-闕’依金屬模具溫度17穴、注入壓力道b硬化 時間70秒之條件,藉半導體密封用環氣樹脂組成物對石夕晶 片等進行密封,㈣表1記載之評_裝。藉超音波探傷裝 .置(日立建機FineTech股份有限公司製,Μ,h啊叩 .觀料賴㈣用環氧職組絲之填H㈣隔件周邊 部中第1段與第2段之晶片間的空隙部(間隙)之積層方向之 厚度中的最薄厚度,設為最薄填充厚度。於此,最薄填充厚 度相當於間隔件厚度。將_件周邊部之第i段與第2段: 晶片間的空隙部(間隙)中有未填充部者視為*良。評估:封 裝數為20個。在不良封裝個數為n個時,表示為n/2〇。 導線流動率:將填充性評估中所使用之封裝以軟X射線 透視裝置(SOFTEX(股)製’ PR〇_TEST1〇〇)攝影,針對22條 導線測定導線長、流動量(連接了導線端之線與導線的最大 距離)。將導線流動率依(流動量)/(導線長)之百分率表示,並 示出所測定之2 2條中的最大值。單位為%。若此值超過$ %, 則相鄰接之導線彼此接觸的可能性高。 099130023 25 201123407 鬥I<】
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屮輕 wH-r<-ruI=l00I 屮磁S7yr~9 屮輕 WJ_y:rs7/££ 【%¥鉍】 5ΐ# ^5¾^ 15 si ^ ¥^s so 【%¥鉍】^^w^^s (o(N/u :搞 ¥i.2K-)?SHi sc si if 0 Φ 4- §0εΙ660 201123407 由表1可明白’無機填充材為含有最薄填充厚度之2/3以 下之粒徑的粒子99.9質量%以上的實施例1〜5,係填充性優 越。又’使用了銅製導線之實施例^3,導線流動率亦優越。 本申請案係主張以平成21年9月8日所申請之日本專利 申請特願2009-206535為基礎的優先權,將其所有揭示内容 取至於此。 【圖式簡單說明】 圖1為針對本發明之半導體裝置的一例,顯示剖面構造的 圖0 圖2為針對本發明之半導體裝置的一例,顯示剖面構造的 【主要元件符號說明】 1 半導體元件 接黏劑層 晶粒座 4 ^ 導線 5 6 7 8 、 9 、 1〇 11 12 100 引線部 硬化體 間隔件 引線框架 半導體元件 接黏劑層 半導體裝置 099130023 27
Claims (1)
- 201123407 七、申請專利範圍: 1.一種半導體裝置,係於引線框架上積層搭载2個以上之 半導體元件,將上述引線框架與上述半導體元件以導線予以 電性接合’將上述半導體元件與上述導線與電性接合部藉半 導體密封用環氧樹脂組成物之硬化物密封而成者; 上述半導體密封用環氧樹脂組成物係含有(A)環氧樹脂、 (B)硬化劑、(c)無機填充材; 上述(C)無機填充材係含有最薄填充厚度之 2/3以下之粒 徑的粒子99.9質量%以上。 2.如申請專利範圍第1項之半導體裝置,其中,藉由積層 上述半導體元件以設置空隙部,於上述空隙部中填充上述半 導體密封用環氧樹脂組成物之硬化物,構成具有最薄之上述 填充厚度的填充部。 二·如申5月專利範圍第2項之半導體裝置,其中,上述半導 體轉與上述半導體元件之_上述空㈣、或上述半導體 上述引線框架之間的上述空隙部中,積層方向上最薄 予X係相當於最薄之上述填充厚度。 申π專利範圍第1至3項中任—項之半導體裝置,其 ,上述導線為銅製導線。 据5加如巾請專·圍第1項之半導體裝置,其躲上述引線 ^由間Pm件積層搭載上述半導體元件者,上述(C)無機 、材係含有上述間隔件厚度之2/3以下之粒徑的粒子99.9 099130023 28 201123407 質量%以上。 6.如申請專利範圍第1項之半導體裝置,其中,上述(C) 無機填充材含有二氧化矽。 - 7.如申請專利範圍第1項之半導體裝置,其中,將上述引 * 線框架與上述半導體元件藉上述導線之反向焊接進行電性 接合。 8. 如申請專利範圍第4項之半導體裝置,其中,上述銅製 導線之銅純度為99.99質量%以上。 9. 如申請專利範圍第4項之半導體裝置,其中,上述銅製 導線係於其表面具有由含鈀之金屬材料所構成的被覆層。 10. 如申請專利範圍第9項之半導體裝置,其中,上述被 m 覆層之厚度為0.001/πη以上且0.02μιη以下。 ' 11.如申請專利範圍第5項之半導體裝置,其中,上述間 隔件之厚度為0.01mm以上且0.2mm以下。 099130023 29
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JPH03201468A (ja) * | 1989-12-28 | 1991-09-03 | Nitto Denko Corp | 半導体装置 |
JP3565319B2 (ja) * | 1999-04-14 | 2004-09-15 | シャープ株式会社 | 半導体装置及びその製造方法 |
US6323263B1 (en) * | 1999-11-11 | 2001-11-27 | Shin-Etsu Chemical Co., Ltd. | Semiconductor sealing liquid epoxy resin compositions |
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JP2001308262A (ja) * | 2000-04-26 | 2001-11-02 | Mitsubishi Electric Corp | 樹脂封止bga型半導体装置 |
JP2001332684A (ja) * | 2000-05-22 | 2001-11-30 | Mitsubishi Electric Corp | 樹脂封止型半導体装置及びその製造方法 |
US6955984B2 (en) * | 2003-05-16 | 2005-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface treatment of metal interconnect lines |
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JP2006019531A (ja) | 2004-07-02 | 2006-01-19 | Toshiba Corp | 半導体装置及びその製造方法 |
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US8766420B2 (en) | 2014-07-01 |
SG178934A1 (en) | 2012-04-27 |
TWI514544B (zh) | 2015-12-21 |
CN102576704A (zh) | 2012-07-11 |
MY156085A (en) | 2016-01-15 |
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