JP7365641B2 - 封止用樹脂組成物及び半導体装置 - Google Patents
封止用樹脂組成物及び半導体装置 Download PDFInfo
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- JP7365641B2 JP7365641B2 JP2020048267A JP2020048267A JP7365641B2 JP 7365641 B2 JP7365641 B2 JP 7365641B2 JP 2020048267 A JP2020048267 A JP 2020048267A JP 2020048267 A JP2020048267 A JP 2020048267A JP 7365641 B2 JP7365641 B2 JP 7365641B2
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- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
Cm+4O4H2m+4 (2)
式(1)におけるnは0以上8以下の数である。nは0以上6以下の数であれば更に好ましい。式(2)におけるmは0以上6以下の数である。mは0以上3以下の数であれば更に好ましい。
表1の「原料」の欄に示す原料を配合し、ミキサーで均一に混合してから、ニーダーで90℃~140℃で加熱混練し、得られた混合物を冷却してから粉砕した。これにより得られた粉体を打錠することで、タブレット状の組成物を得た。
-エポキシ樹脂:o-クレゾールノボラック型エポキシ樹脂。エポキシ当量200。
-フェノール系硬化剤:フェノールノボラック樹脂。水酸基当量105。
-難燃剤:水酸化アルミニウム。
-硬化促進剤:トリフェニルホスフィン。
-離型剤:カルナバワックス。
-着色剤:カーボンブラック。
-無機充填材:溶融シリカ。
-シランカップリング剤:γ-グリシドキシプロピルトリメトキシシラン。
-カルボン酸1:組成式C5H8O4。構造式HOCO(CH2)3COOH。融点96℃。
-カルボン酸2:組成式C5H6O4。構造式HOCOCH2CH=CHCOOH。融点130℃。
-カルボン酸3:組成式C8H14O4。構造式HOCO(CH2)6COOH。融点143℃。
-カルボン酸4:組成式C4H6O4。構造式HOCO(CH2)2COOH。融点186℃。
-溶融混合物:C5H6O4とフェノールノボラック樹脂とを20:80の質量比で混合した混合物を150℃の条件で加熱攪拌することで得られた溶融混合物。
(1)スパイラルフロー長さ
組成物のスパイラルフロー長さを、ASTM D3123に準拠したスパイラルフロー測定金型を用いて、金型温度170℃、注入圧力6.9MPa、保持時間120秒の条件で測定した。
JSRトレーディング株式会社製のキュラストメータVPS型を用いて、組成物を1700℃で加熱しながらトルクを測定した。加熱開始時からトルクの測定値が0.1kgf・cm(9.81mN・m)に達するまでに要した時間を調査し、この時間をゲルタイムとした。
銅板にニッケルメッキ層を設けることで作製された基板を用意した。金型を用い、組成物をトランスファ成形法で金型温度170℃、注入圧力6.9MPa、硬化時間120秒の条件で成形することで、基板の上に硬化物を作製した。硬化物と基板との間の密着力を、Dage社製のボンドテスターで測定した。なお、比較例2ではトランスファ成形法で成形することができず、密着性を評価できなかった。
50 半導体素子
54 メッキ層
62 封止材
Claims (9)
- エポキシ樹脂(A)、
フェノール系硬化剤(B)、
無機充填材(C)、及び
80℃以上200℃以下の融点を有するカルボン酸(D)を含有し、
前記エポキシ樹脂(A)、前記フェノール系硬化剤(B)及び前記カルボン酸(D)の合計に対する、前記カルボン酸(D)中のカルボキシル基の総量の割合が、0.01質量%以上10質量%以下であり、
前記カルボン酸(D)は、下記式(2)に示す化合物を含有し、
C m+4 O 4 H 2m+4 (2)
前記式(2)におけるmは0以上3以下の数である、
封止用樹脂組成物。 - 前記カルボン酸(D)は、一分子中に少なくとも二つのカルボキシル基を有する、
請求項1に記載の封止用樹脂組成物。 - 前記カルボン酸(D)は、下記式(1)に示す化合物を更に含有し、
Cn+2O4H2n+2 (1)
前記式(1)におけるnは0以上6以下の数である、
請求項1又は2に記載の封止用樹脂組成物。 - 前記カルボン酸(D)の前記融点が90℃以上140℃以下である、
請求項1から3のいずれか一項に記載の封止用樹脂組成物。 - 前記封止用樹脂組成物に対する前記カルボン酸(D)の割合は、0.1質量%以上2質量%以下である、
請求項1から4のいずれか一項に記載の封止用樹脂組成物。 - 前記フェノール系硬化剤(B)の少なくとも一部と前記カルボン酸(D)の少なくとも一部とを含有する溶融混合物を含有する、
請求項1から5のいずれか一項に記載の封止用樹脂組成物。 - 前記封止用樹脂組成物を、最外層がニッケルからなる金属プレート上に配置して、175℃で120秒間加熱することで前記封止用樹脂組成物の硬化物を作製した場合の、前記金属プレートに対する前記硬化物の接着強度は、1MPa以上である、
請求項1から6のいずれか一項に記載の封止用樹脂組成物。 - 半導体素子と、
前記半導体素子を封止する封止材とを備え、
前記封止材は、請求項1から7のいずれか一項に記載の封止用樹脂組成物の硬化物である、
半導体装置。 - ニッケルを含有するメッキ層を有する導体を更に備え、
前記導体は前記封止材に接している、
請求項8に記載の半導体装置。
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JP2004027005A (ja) | 2002-06-25 | 2004-01-29 | Matsushita Electric Works Ltd | 封止用液状エポキシ樹脂組成物及び半導体装置 |
JP2014114426A (ja) | 2012-12-12 | 2014-06-26 | Panasonic Corp | 半導体封止用エポキシ樹脂組成物とそれを用いたパワーモジュール |
JP2018058960A (ja) | 2016-10-03 | 2018-04-12 | パナソニックIpマネジメント株式会社 | 封止用樹脂組成物、半導体装置、及び半導体装置の製造方法 |
JP2019214666A (ja) | 2018-06-12 | 2019-12-19 | 日立化成株式会社 | 樹脂組成物及びその硬化物、並びに半導体装置の製造方法 |
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JPS60219756A (ja) * | 1984-04-17 | 1985-11-02 | Hitachi Ltd | 樹脂封止型半導体装置 |
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JP2004027005A (ja) | 2002-06-25 | 2004-01-29 | Matsushita Electric Works Ltd | 封止用液状エポキシ樹脂組成物及び半導体装置 |
JP2014114426A (ja) | 2012-12-12 | 2014-06-26 | Panasonic Corp | 半導体封止用エポキシ樹脂組成物とそれを用いたパワーモジュール |
JP2018058960A (ja) | 2016-10-03 | 2018-04-12 | パナソニックIpマネジメント株式会社 | 封止用樹脂組成物、半導体装置、及び半導体装置の製造方法 |
JP2019214666A (ja) | 2018-06-12 | 2019-12-19 | 日立化成株式会社 | 樹脂組成物及びその硬化物、並びに半導体装置の製造方法 |
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