TW201001607A - Treatment apparatus - Google Patents
Treatment apparatus Download PDFInfo
- Publication number
- TW201001607A TW201001607A TW098121196A TW98121196A TW201001607A TW 201001607 A TW201001607 A TW 201001607A TW 098121196 A TW098121196 A TW 098121196A TW 98121196 A TW98121196 A TW 98121196A TW 201001607 A TW201001607 A TW 201001607A
- Authority
- TW
- Taiwan
- Prior art keywords
- rectifying
- processing
- rectifying wall
- substrate
- wall
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 93
- 239000000919 ceramic Substances 0.000 claims description 20
- 230000001105 regulatory effect Effects 0.000 claims description 16
- 230000003028 elevating effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 65
- 238000005530 etching Methods 0.000 abstract description 47
- 238000000034 method Methods 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 239000002585 base Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000000047 product Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000011162 core material Substances 0.000 description 5
- 229910052770 Uranium Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008166420A JP5067279B2 (ja) | 2008-06-25 | 2008-06-25 | 処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201001607A true TW201001607A (en) | 2010-01-01 |
Family
ID=41495136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098121196A TW201001607A (en) | 2008-06-25 | 2009-06-24 | Treatment apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5067279B2 (enExample) |
| KR (1) | KR101092071B1 (enExample) |
| CN (1) | CN101615574B (enExample) |
| TW (1) | TW201001607A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5141520B2 (ja) * | 2008-12-02 | 2013-02-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP6368282B2 (ja) * | 2015-06-29 | 2018-08-01 | クアーズテック株式会社 | ウエハボート及びその製造方法 |
| CN107808838A (zh) * | 2017-11-13 | 2018-03-16 | 武汉华星光电半导体显示技术有限公司 | 干刻蚀装置及干刻蚀方法 |
| JP7325256B2 (ja) * | 2019-08-05 | 2023-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7655126B2 (ja) * | 2021-07-26 | 2025-04-02 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP7665464B2 (ja) * | 2021-07-26 | 2025-04-21 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| CN115682652A (zh) * | 2021-10-09 | 2023-02-03 | 广东聚华印刷显示技术有限公司 | 烘烤设备以及烘烤方法 |
| JP2023132469A (ja) * | 2022-03-11 | 2023-09-22 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61276322A (ja) * | 1985-05-31 | 1986-12-06 | Mitsubishi Electric Corp | 半導体製造装置 |
| JPH1022263A (ja) * | 1996-06-28 | 1998-01-23 | Sony Corp | プラズマエッチング装置 |
| JP3251215B2 (ja) * | 1996-10-02 | 2002-01-28 | 松下電器産業株式会社 | 電子デバイスの製造装置及び電子デバイスの製造方法 |
| JP2002217172A (ja) * | 2001-01-17 | 2002-08-02 | Mitsubishi Electric Corp | 製造装置 |
| JP4025030B2 (ja) * | 2001-04-17 | 2007-12-19 | 東京エレクトロン株式会社 | 基板の処理装置及び搬送アーム |
| DE10217806A1 (de) * | 2002-04-22 | 2003-10-30 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden dünner Schichten auf einem Substrat in einer höherverstellbaren Prozesskammer |
| JP2004289003A (ja) * | 2003-03-24 | 2004-10-14 | Seiko Epson Corp | 石英リング、プラズマ処理装置および半導体装置の製造方法 |
| US7220497B2 (en) * | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
| JP2005259989A (ja) * | 2004-03-11 | 2005-09-22 | Sharp Corp | ガス整流部材およびドライプロセス装置 |
| JP2007042744A (ja) * | 2005-08-01 | 2007-02-15 | Sharp Corp | プラズマ処理装置 |
| JP2009054720A (ja) * | 2007-08-24 | 2009-03-12 | Tokyo Electron Ltd | 処理装置 |
| JP5256866B2 (ja) * | 2008-02-05 | 2013-08-07 | 東京エレクトロン株式会社 | 処理装置 |
| JP5113016B2 (ja) * | 2008-04-07 | 2013-01-09 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP5120089B2 (ja) * | 2008-06-17 | 2013-01-16 | 東京エレクトロン株式会社 | 処理装置 |
-
2008
- 2008-06-25 JP JP2008166420A patent/JP5067279B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-24 TW TW098121196A patent/TW201001607A/zh unknown
- 2009-06-24 KR KR1020090056499A patent/KR101092071B1/ko not_active Expired - Fee Related
- 2009-06-25 CN CN2009101494883A patent/CN101615574B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101615574B (zh) | 2011-07-13 |
| JP2010010304A (ja) | 2010-01-14 |
| KR101092071B1 (ko) | 2011-12-12 |
| CN101615574A (zh) | 2009-12-30 |
| JP5067279B2 (ja) | 2012-11-07 |
| KR20100002173A (ko) | 2010-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201001607A (en) | Treatment apparatus | |
| CN103824800B (zh) | 基板载置台和基板处理装置 | |
| TWI778005B (zh) | 電漿處理裝置 | |
| JP5612300B2 (ja) | 基板載置台、その製造方法及び基板処理装置 | |
| KR20100133910A (ko) | 플라즈마 처리장치용의 소모품의 재이용 방법 | |
| TW200929356A (en) | Processing device | |
| JP5120089B2 (ja) | 処理装置 | |
| TWI403222B (zh) | Plasma processing device | |
| TW201011829A (en) | Focus ring and plasma processing apparatus | |
| JP6171108B2 (ja) | 成膜装置及び成膜方法 | |
| JP2002313898A5 (enExample) | ||
| TW200901363A (en) | Substrate carrying bench and substrate treatment device | |
| JP2009224385A (ja) | プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材 | |
| TW201947659A (zh) | 電漿處理裝置及被處理體之搬運方法 | |
| JP6010296B2 (ja) | 静電チャック | |
| CN101191203A (zh) | 等离子体反应器基板安装表面毛化 | |
| JP2007311823A (ja) | 吸着装置、搬送装置 | |
| CN112992642B (zh) | 边缘环和基片处理装置 | |
| JP4783094B2 (ja) | プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材 | |
| CN102543816B (zh) | 静电吸盘 | |
| JP2004071791A (ja) | 基板載置部材およびそれを用いた基板処理装置 | |
| TWI681068B (zh) | 基板處理裝置及成膜裝置 | |
| TW202133250A (zh) | 基板處理裝置 | |
| JP7785982B2 (ja) | 基板載置台の研磨方法及び基板載置台 | |
| JP4184814B2 (ja) | 平行平板型プラズマｃｖｄ装置および成膜基板の製造方法 |