CN101615574B - 处理装置 - Google Patents
处理装置 Download PDFInfo
- Publication number
- CN101615574B CN101615574B CN2009101494883A CN200910149488A CN101615574B CN 101615574 B CN101615574 B CN 101615574B CN 2009101494883 A CN2009101494883 A CN 2009101494883A CN 200910149488 A CN200910149488 A CN 200910149488A CN 101615574 B CN101615574 B CN 101615574B
- Authority
- CN
- China
- Prior art keywords
- rectification
- processing unit
- porous body
- rectification wall
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003028 elevating effect Effects 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 7
- 238000000638 solvent extraction Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 abstract description 27
- 230000000694 effects Effects 0.000 abstract description 19
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 60
- 239000007789 gas Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 31
- 230000008569 process Effects 0.000 description 28
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 25
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 239000004411 aluminium Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 13
- 239000000047 product Substances 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000005422 blasting Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 244000287680 Garcinia dulcis Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-166420 | 2008-06-25 | ||
| JP2008166420 | 2008-06-25 | ||
| JP2008166420A JP5067279B2 (ja) | 2008-06-25 | 2008-06-25 | 処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101615574A CN101615574A (zh) | 2009-12-30 |
| CN101615574B true CN101615574B (zh) | 2011-07-13 |
Family
ID=41495136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101494883A Expired - Fee Related CN101615574B (zh) | 2008-06-25 | 2009-06-25 | 处理装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5067279B2 (enExample) |
| KR (1) | KR101092071B1 (enExample) |
| CN (1) | CN101615574B (enExample) |
| TW (1) | TW201001607A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5141520B2 (ja) * | 2008-12-02 | 2013-02-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP6368282B2 (ja) * | 2015-06-29 | 2018-08-01 | クアーズテック株式会社 | ウエハボート及びその製造方法 |
| CN107808838A (zh) * | 2017-11-13 | 2018-03-16 | 武汉华星光电半导体显示技术有限公司 | 干刻蚀装置及干刻蚀方法 |
| JP7325256B2 (ja) * | 2019-08-05 | 2023-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7665464B2 (ja) * | 2021-07-26 | 2025-04-21 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP7655126B2 (ja) * | 2021-07-26 | 2025-04-02 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| CN115682652A (zh) * | 2021-10-09 | 2023-02-03 | 广东聚华印刷显示技术有限公司 | 烘烤设备以及烘烤方法 |
| JP2023132469A (ja) * | 2022-03-11 | 2023-09-22 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7220497B2 (en) * | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61276322A (ja) * | 1985-05-31 | 1986-12-06 | Mitsubishi Electric Corp | 半導体製造装置 |
| JPH1022263A (ja) * | 1996-06-28 | 1998-01-23 | Sony Corp | プラズマエッチング装置 |
| JP3251215B2 (ja) * | 1996-10-02 | 2002-01-28 | 松下電器産業株式会社 | 電子デバイスの製造装置及び電子デバイスの製造方法 |
| JP2002217172A (ja) * | 2001-01-17 | 2002-08-02 | Mitsubishi Electric Corp | 製造装置 |
| JP4025030B2 (ja) * | 2001-04-17 | 2007-12-19 | 東京エレクトロン株式会社 | 基板の処理装置及び搬送アーム |
| DE10217806A1 (de) * | 2002-04-22 | 2003-10-30 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden dünner Schichten auf einem Substrat in einer höherverstellbaren Prozesskammer |
| JP2004289003A (ja) * | 2003-03-24 | 2004-10-14 | Seiko Epson Corp | 石英リング、プラズマ処理装置および半導体装置の製造方法 |
| JP2005259989A (ja) * | 2004-03-11 | 2005-09-22 | Sharp Corp | ガス整流部材およびドライプロセス装置 |
| JP2007042744A (ja) * | 2005-08-01 | 2007-02-15 | Sharp Corp | プラズマ処理装置 |
| JP2009054720A (ja) * | 2007-08-24 | 2009-03-12 | Tokyo Electron Ltd | 処理装置 |
| JP5256866B2 (ja) * | 2008-02-05 | 2013-08-07 | 東京エレクトロン株式会社 | 処理装置 |
| JP5113016B2 (ja) * | 2008-04-07 | 2013-01-09 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP5120089B2 (ja) * | 2008-06-17 | 2013-01-16 | 東京エレクトロン株式会社 | 処理装置 |
-
2008
- 2008-06-25 JP JP2008166420A patent/JP5067279B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-24 TW TW098121196A patent/TW201001607A/zh unknown
- 2009-06-24 KR KR1020090056499A patent/KR101092071B1/ko not_active Expired - Fee Related
- 2009-06-25 CN CN2009101494883A patent/CN101615574B/zh not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7220497B2 (en) * | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平1-128518A 1989.05.22 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100002173A (ko) | 2010-01-06 |
| TW201001607A (en) | 2010-01-01 |
| CN101615574A (zh) | 2009-12-30 |
| KR101092071B1 (ko) | 2011-12-12 |
| JP2010010304A (ja) | 2010-01-14 |
| JP5067279B2 (ja) | 2012-11-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110713 Termination date: 20150625 |
|
| EXPY | Termination of patent right or utility model |