KR101092071B1 - 처리 장치 - Google Patents

처리 장치 Download PDF

Info

Publication number
KR101092071B1
KR101092071B1 KR1020090056499A KR20090056499A KR101092071B1 KR 101092071 B1 KR101092071 B1 KR 101092071B1 KR 1020090056499 A KR1020090056499 A KR 1020090056499A KR 20090056499 A KR20090056499 A KR 20090056499A KR 101092071 B1 KR101092071 B1 KR 101092071B1
Authority
KR
South Korea
Prior art keywords
rectifying
substrate
rectifying wall
wall
porous body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020090056499A
Other languages
English (en)
Korean (ko)
Other versions
KR20100002173A (ko
Inventor
미나미 마사토
사사키 요시히코
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20100002173A publication Critical patent/KR20100002173A/ko
Application granted granted Critical
Publication of KR101092071B1 publication Critical patent/KR101092071B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020090056499A 2008-06-25 2009-06-24 처리 장치 Expired - Fee Related KR101092071B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-166420 2008-06-25
JP2008166420A JP5067279B2 (ja) 2008-06-25 2008-06-25 処理装置

Publications (2)

Publication Number Publication Date
KR20100002173A KR20100002173A (ko) 2010-01-06
KR101092071B1 true KR101092071B1 (ko) 2011-12-12

Family

ID=41495136

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090056499A Expired - Fee Related KR101092071B1 (ko) 2008-06-25 2009-06-24 처리 장치

Country Status (4)

Country Link
JP (1) JP5067279B2 (enExample)
KR (1) KR101092071B1 (enExample)
CN (1) CN101615574B (enExample)
TW (1) TW201001607A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5141520B2 (ja) * 2008-12-02 2013-02-13 東京エレクトロン株式会社 プラズマ処理装置
JP6368282B2 (ja) * 2015-06-29 2018-08-01 クアーズテック株式会社 ウエハボート及びその製造方法
CN107808838A (zh) * 2017-11-13 2018-03-16 武汉华星光电半导体显示技术有限公司 干刻蚀装置及干刻蚀方法
JP7325256B2 (ja) * 2019-08-05 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置
JP7665464B2 (ja) * 2021-07-26 2025-04-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7655126B2 (ja) * 2021-07-26 2025-04-02 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN115682652A (zh) * 2021-10-09 2023-02-03 广东聚华印刷显示技术有限公司 烘烤设备以及烘烤方法
JP2023132469A (ja) * 2022-03-11 2023-09-22 東京エレクトロン株式会社 成膜装置および成膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005523385A (ja) * 2002-04-22 2005-08-04 アイクストロン、アーゲー 高さ調節可能な処理チャンバ内における基板上への薄膜層堆積プロセス及び装置
KR100798659B1 (ko) * 2001-04-17 2008-01-29 동경 엘렉트론 주식회사 기판처리장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61276322A (ja) * 1985-05-31 1986-12-06 Mitsubishi Electric Corp 半導体製造装置
JPH1022263A (ja) * 1996-06-28 1998-01-23 Sony Corp プラズマエッチング装置
JP3251215B2 (ja) * 1996-10-02 2002-01-28 松下電器産業株式会社 電子デバイスの製造装置及び電子デバイスの製造方法
JP2002217172A (ja) * 2001-01-17 2002-08-02 Mitsubishi Electric Corp 製造装置
JP2004289003A (ja) * 2003-03-24 2004-10-14 Seiko Epson Corp 石英リング、プラズマ処理装置および半導体装置の製造方法
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
JP2005259989A (ja) * 2004-03-11 2005-09-22 Sharp Corp ガス整流部材およびドライプロセス装置
JP2007042744A (ja) * 2005-08-01 2007-02-15 Sharp Corp プラズマ処理装置
JP2009054720A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 処理装置
JP5256866B2 (ja) * 2008-02-05 2013-08-07 東京エレクトロン株式会社 処理装置
JP5113016B2 (ja) * 2008-04-07 2013-01-09 東京エレクトロン株式会社 基板処理装置
JP5120089B2 (ja) * 2008-06-17 2013-01-16 東京エレクトロン株式会社 処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100798659B1 (ko) * 2001-04-17 2008-01-29 동경 엘렉트론 주식회사 기판처리장치
JP2005523385A (ja) * 2002-04-22 2005-08-04 アイクストロン、アーゲー 高さ調節可能な処理チャンバ内における基板上への薄膜層堆積プロセス及び装置

Also Published As

Publication number Publication date
KR20100002173A (ko) 2010-01-06
TW201001607A (en) 2010-01-01
CN101615574A (zh) 2009-12-30
CN101615574B (zh) 2011-07-13
JP2010010304A (ja) 2010-01-14
JP5067279B2 (ja) 2012-11-07

Similar Documents

Publication Publication Date Title
KR101092071B1 (ko) 처리 장치
KR102780538B1 (ko) Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
KR101088289B1 (ko) 탑재대, 처리 장치 및 처리 시스템
KR101133880B1 (ko) 플라즈마 처리 장치
KR101261706B1 (ko) 기판 탑재대, 그 제조 방법 및 기판 처리 장치
TWI501311B (zh) Focusing ring and plasma processing device
KR101063064B1 (ko) 처리 장치
JP5281811B2 (ja) プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材
JP2009054720A (ja) 処理装置
TW201947659A (zh) 電漿處理裝置及被處理體之搬運方法
KR20140086836A (ko) 플라즈마 처리 용기 및 플라즈마 처리 장치
JP6010296B2 (ja) 静電チャック
TWI442502B (zh) Plasma processing containers and plasma processing devices
KR101949175B1 (ko) 정전척, 그를 가지는 기판처리장치, 및 정전척의 제조방법
TWI759470B (zh) 閘閥裝置及基板處理系統
JP7785982B2 (ja) 基板載置台の研磨方法及び基板載置台
JP6671034B2 (ja) プラズマ処理装置およびプラズマ処理方法
TWI839548B (zh) 濺鍍裝置
JP2025061168A (ja) 基板載置台の研磨方法及び基板載置台
KR100734770B1 (ko) 플라즈마 처리 장치
JP2023017479A (ja) 基板処理装置及び基板処理方法
KR20040040240A (ko) 건식 식각 챔버의 리프트 핀 구조

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20141203

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20141203

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000