JP5067279B2 - 処理装置 - Google Patents

処理装置 Download PDF

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Publication number
JP5067279B2
JP5067279B2 JP2008166420A JP2008166420A JP5067279B2 JP 5067279 B2 JP5067279 B2 JP 5067279B2 JP 2008166420 A JP2008166420 A JP 2008166420A JP 2008166420 A JP2008166420 A JP 2008166420A JP 5067279 B2 JP5067279 B2 JP 5067279B2
Authority
JP
Japan
Prior art keywords
rectifying
processing apparatus
wall
processing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008166420A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010010304A (ja
JP2010010304A5 (enExample
Inventor
雅人 南
芳彦 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008166420A priority Critical patent/JP5067279B2/ja
Priority to TW098121196A priority patent/TW201001607A/zh
Priority to KR1020090056499A priority patent/KR101092071B1/ko
Priority to CN2009101494883A priority patent/CN101615574B/zh
Publication of JP2010010304A publication Critical patent/JP2010010304A/ja
Publication of JP2010010304A5 publication Critical patent/JP2010010304A5/ja
Application granted granted Critical
Publication of JP5067279B2 publication Critical patent/JP5067279B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2008166420A 2008-06-25 2008-06-25 処理装置 Expired - Fee Related JP5067279B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008166420A JP5067279B2 (ja) 2008-06-25 2008-06-25 処理装置
TW098121196A TW201001607A (en) 2008-06-25 2009-06-24 Treatment apparatus
KR1020090056499A KR101092071B1 (ko) 2008-06-25 2009-06-24 처리 장치
CN2009101494883A CN101615574B (zh) 2008-06-25 2009-06-25 处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008166420A JP5067279B2 (ja) 2008-06-25 2008-06-25 処理装置

Publications (3)

Publication Number Publication Date
JP2010010304A JP2010010304A (ja) 2010-01-14
JP2010010304A5 JP2010010304A5 (enExample) 2011-07-21
JP5067279B2 true JP5067279B2 (ja) 2012-11-07

Family

ID=41495136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008166420A Expired - Fee Related JP5067279B2 (ja) 2008-06-25 2008-06-25 処理装置

Country Status (4)

Country Link
JP (1) JP5067279B2 (enExample)
KR (1) KR101092071B1 (enExample)
CN (1) CN101615574B (enExample)
TW (1) TW201001607A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5141520B2 (ja) * 2008-12-02 2013-02-13 東京エレクトロン株式会社 プラズマ処理装置
JP6368282B2 (ja) * 2015-06-29 2018-08-01 クアーズテック株式会社 ウエハボート及びその製造方法
CN107808838A (zh) * 2017-11-13 2018-03-16 武汉华星光电半导体显示技术有限公司 干刻蚀装置及干刻蚀方法
JP7325256B2 (ja) * 2019-08-05 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置
JP7655126B2 (ja) * 2021-07-26 2025-04-02 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7665464B2 (ja) * 2021-07-26 2025-04-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN115682652A (zh) * 2021-10-09 2023-02-03 广东聚华印刷显示技术有限公司 烘烤设备以及烘烤方法
JP2023132469A (ja) * 2022-03-11 2023-09-22 東京エレクトロン株式会社 成膜装置および成膜方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61276322A (ja) * 1985-05-31 1986-12-06 Mitsubishi Electric Corp 半導体製造装置
JPH1022263A (ja) * 1996-06-28 1998-01-23 Sony Corp プラズマエッチング装置
JP3251215B2 (ja) * 1996-10-02 2002-01-28 松下電器産業株式会社 電子デバイスの製造装置及び電子デバイスの製造方法
JP2002217172A (ja) * 2001-01-17 2002-08-02 Mitsubishi Electric Corp 製造装置
JP4025030B2 (ja) * 2001-04-17 2007-12-19 東京エレクトロン株式会社 基板の処理装置及び搬送アーム
DE10217806A1 (de) * 2002-04-22 2003-10-30 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden dünner Schichten auf einem Substrat in einer höherverstellbaren Prozesskammer
JP2004289003A (ja) * 2003-03-24 2004-10-14 Seiko Epson Corp 石英リング、プラズマ処理装置および半導体装置の製造方法
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
JP2005259989A (ja) * 2004-03-11 2005-09-22 Sharp Corp ガス整流部材およびドライプロセス装置
JP2007042744A (ja) * 2005-08-01 2007-02-15 Sharp Corp プラズマ処理装置
JP2009054720A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 処理装置
JP5256866B2 (ja) * 2008-02-05 2013-08-07 東京エレクトロン株式会社 処理装置
JP5113016B2 (ja) * 2008-04-07 2013-01-09 東京エレクトロン株式会社 基板処理装置
JP5120089B2 (ja) * 2008-06-17 2013-01-16 東京エレクトロン株式会社 処理装置

Also Published As

Publication number Publication date
CN101615574B (zh) 2011-07-13
JP2010010304A (ja) 2010-01-14
TW201001607A (en) 2010-01-01
KR101092071B1 (ko) 2011-12-12
CN101615574A (zh) 2009-12-30
KR20100002173A (ko) 2010-01-06

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