JP6010296B2 - 静電チャック - Google Patents
静電チャック Download PDFInfo
- Publication number
- JP6010296B2 JP6010296B2 JP2011275655A JP2011275655A JP6010296B2 JP 6010296 B2 JP6010296 B2 JP 6010296B2 JP 2011275655 A JP2011275655 A JP 2011275655A JP 2011275655 A JP2011275655 A JP 2011275655A JP 6010296 B2 JP6010296 B2 JP 6010296B2
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- Prior art keywords
- electrostatic chuck
- substrate
- layer
- substrate mounting
- mounting surface
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Description
ティクル等の汚染物質が吸着するという問題がある。また、ガラスからなる基板がアルミナ層上に載置されるので、両者の硬度差に起因して基板の裏面に傷がつくという問題もある。
易に適用することができる静電チャックを提供することにある。
熱を基板Gに効果的に伝達する。
40a〜40e 静電チャック
41 基板載置面
42 上層
43 下層
44 静電電極板
45a〜45e 最上層
Claims (14)
- フッ素含有ガスから生じるプラズマを用いてガラス基板に処理を施す基板処理装置の処理室内において前記ガラス基板を載置する基板載置台上に基板載置面を形成する静電チャックであって、
前記静電チャックに載置された前記ガラス基板を前記静電チャックから持ち上げる際の剥離帯電の発生を防止するために、前記基板載置面に前記ガラス基板の裏面の構成材料と同じガラス材からなり、前記ガラス基板の裏面に当接する被膜層が形成され、前記被膜層の厚さは0.1μm〜100μmであることを特徴とする静電チャック。 - 前記基板載置面には、外周部と、該外周部に囲まれた領域に存在する島部分とが突出した突出部となるエンボス状構造が形成されており、
前記被膜層は、前記外周部に形成されていることを特徴とする請求項1記載の静電チャック。 - 前記被膜層は、さらに、前記島部分に形成されていることを特徴とする請求項2記載の静電チャック。
- 前記エンボス状構造は、前記基板載置面を突出させて突出部を形成し、該突出部の上面に前記被膜層が形成されて成ることを特徴とする請求項2又は3に記載の静電チャック。
- 前記エンボス状構造は、前記基板載置面を平面とし、該平面上に前記被膜層により突出部を形成することにより成ることを特徴とする請求項2又は3に記載の静電チャック。
- 前記被膜層は、前記基板載置面における該基板載置面から前記基板を持ち上げるために設けられたリフターピンが昇降する開口を囲む領域に形成されていることを特徴とする請求項1記載の静電チャック。
- 前記被膜層は、前記基板載置面の全面に亘って形成されていることを特徴とする請求項1記載の静電チャック。
- 前記被膜層はガラスで形成されていることを特徴とする請求項1乃至7のいずれか1項に記載の静電チャック。
- 前記基板載置面は、上層と、下層と、該上層及び下層に挟持された静電電極板とを有する前記静電チャックの前記上層の上部表面であり、前記上層及び下層はフッ素含有ガスに対する耐性を有する誘電体からなることを特徴とする請求項1乃至8のいずれか1項に記載の静電チャック。
- 前記基板載置面には、外周部と、該外周部に囲まれた領域に存在する島部分とが突出した突出部となるエンボス状構造が形成されており、
前記被膜層は前記島部分に形成され、
前記外周部は耐プラズマ性材料から構成されていることを特徴とする請求項1記載の静電チャック。 - 前記島部分は前記被膜層のみによって形成されることを特徴とする請求項10記載の静電チャック。
- 前記島部分は前記基板載置面を突出させて突出部を形成し、該突出部の上面に前記被膜層が形成されることを特徴とする請求項10記載の静電チャック。
- 前記被膜層はガラスで形成されていることを特徴とする請求項10乃至12のいずれか1項に記載の静電チャック。
- 前記基板載置面は、上層と、下層と、該上層及び下層に挟持された静電電極板とを有する前記静電チャックの前記上層の上部表面であり、前記上層及び下層はフッ素含有ガスに対する耐性を有する誘電体からなることを特徴とする請求項10乃至12のいずれか1項に記載の静電チャック。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011275655A JP6010296B2 (ja) | 2010-12-28 | 2011-12-16 | 静電チャック |
TW100148798A TWI549221B (zh) | 2010-12-28 | 2011-12-27 | Electrostatic fixture |
KR1020110143215A KR101353157B1 (ko) | 2010-12-28 | 2011-12-27 | 정전 척 |
CN201110460424.2A CN102543816B (zh) | 2010-12-28 | 2011-12-28 | 静电吸盘 |
KR1020130065870A KR20130079464A (ko) | 2010-12-28 | 2013-06-10 | 정전 척 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010291980 | 2010-12-28 | ||
JP2010291980 | 2010-12-28 | ||
JP2011275655A JP6010296B2 (ja) | 2010-12-28 | 2011-12-16 | 静電チャック |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012151450A JP2012151450A (ja) | 2012-08-09 |
JP6010296B2 true JP6010296B2 (ja) | 2016-10-19 |
Family
ID=46793376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011275655A Active JP6010296B2 (ja) | 2010-12-28 | 2011-12-16 | 静電チャック |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6010296B2 (ja) |
KR (1) | KR20130079464A (ja) |
TW (1) | TWI549221B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104241183B (zh) * | 2013-06-08 | 2017-09-08 | 中微半导体设备(上海)有限公司 | 静电吸盘的制造方法,静电吸盘及等离子体处理装置 |
US20150062772A1 (en) * | 2013-08-27 | 2015-03-05 | Varian Semiconductor Equipment Associates, Inc | Barrier Layer For Electrostatic Chucks |
US9518326B2 (en) * | 2013-10-21 | 2016-12-13 | Applied Materials, Inc. | Method for forming an electrostatic chuck using film printing technology |
JP6283532B2 (ja) | 2014-02-26 | 2018-02-21 | 東京エレクトロン株式会社 | 静電チャックの製造方法 |
JP7241519B2 (ja) * | 2018-12-04 | 2023-03-17 | 東京エレクトロン株式会社 | 基板載置台、基板処理装置及び基板載置台の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2975205B2 (ja) * | 1992-01-24 | 1999-11-10 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
JPH0766271A (ja) * | 1993-08-31 | 1995-03-10 | Canon Inc | 静電吸着装置 |
JPH11238780A (ja) * | 1998-02-19 | 1999-08-31 | Shin Etsu Chem Co Ltd | 半導体シリコンウエーハ搬送保持具およびこれを用いた半導体プロセス装置 |
JP2002368068A (ja) * | 2001-06-05 | 2002-12-20 | Sharp Corp | 吸着ステージ |
JP4024613B2 (ja) * | 2002-07-30 | 2007-12-19 | 株式会社アルバック | 吸着装置、真空処理装置及び吸着方法 |
JP4942364B2 (ja) * | 2005-02-24 | 2012-05-30 | 京セラ株式会社 | 静電チャックおよびウェハ保持部材並びにウェハ処理方法 |
JP4657824B2 (ja) * | 2005-06-17 | 2011-03-23 | 東京エレクトロン株式会社 | 基板載置台、基板処理装置および基板載置台の製造方法 |
KR101066450B1 (ko) * | 2005-09-28 | 2011-09-23 | 가부시키가이샤 오쿠텍 | 시료 유지구와 이것을 사용한 시료 흡착 장치 및 시료 처리방법 |
TW200735254A (en) * | 2006-03-03 | 2007-09-16 | Ngk Insulators Ltd | Electrostatic chuck and producing method thereof |
JP4994121B2 (ja) * | 2006-08-10 | 2012-08-08 | 東京エレクトロン株式会社 | 静電吸着電極、基板処理装置および静電吸着電極の製造方法 |
JP5059450B2 (ja) * | 2007-03-06 | 2012-10-24 | 東京エレクトロン株式会社 | 基板載置台及び基板処理装置 |
WO2009035002A1 (ja) * | 2007-09-11 | 2009-03-19 | Canon Anelva Corporation | 静電チャック |
-
2011
- 2011-12-16 JP JP2011275655A patent/JP6010296B2/ja active Active
- 2011-12-27 TW TW100148798A patent/TWI549221B/zh active
-
2013
- 2013-06-10 KR KR1020130065870A patent/KR20130079464A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
TW201240011A (en) | 2012-10-01 |
KR20130079464A (ko) | 2013-07-10 |
TWI549221B (zh) | 2016-09-11 |
JP2012151450A (ja) | 2012-08-09 |
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