TW200908343A - Non-volatile semiconductor memory device - Google Patents
Non-volatile semiconductor memory device Download PDFInfo
- Publication number
- TW200908343A TW200908343A TW097111859A TW97111859A TW200908343A TW 200908343 A TW200908343 A TW 200908343A TW 097111859 A TW097111859 A TW 097111859A TW 97111859 A TW97111859 A TW 97111859A TW 200908343 A TW200908343 A TW 200908343A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- voltage
- gate
- memory
- memory cell
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 230000015654 memory Effects 0.000 claims abstract description 386
- 230000005641 tunneling Effects 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000003860 storage Methods 0.000 claims description 80
- 238000000034 method Methods 0.000 claims description 51
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 33
- 238000002347 injection Methods 0.000 claims description 29
- 239000007924 injection Substances 0.000 claims description 29
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 17
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 230000009471 action Effects 0.000 claims description 15
- 239000002784 hot electron Substances 0.000 claims description 15
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 230000006870 function Effects 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 description 72
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 72
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 44
- 239000012535 impurity Substances 0.000 description 34
- 101710117542 Botulinum neurotoxin type A Proteins 0.000 description 22
- 229940089093 botox Drugs 0.000 description 22
- 239000010410 layer Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 17
- 125000006850 spacer group Chemical group 0.000 description 13
- 230000005684 electric field Effects 0.000 description 10
- 230000014759 maintenance of location Effects 0.000 description 10
- 101100020724 Zea mays MGL3 gene Proteins 0.000 description 9
- 101001084254 Homo sapiens Peptidyl-tRNA hydrolase 2, mitochondrial Proteins 0.000 description 8
- 102100030867 Peptidyl-tRNA hydrolase 2, mitochondrial Human genes 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000001459 lithography Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 101100272590 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) BIT2 gene Proteins 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 101100194362 Schizosaccharomyces pombe (strain 972 / ATCC 24843) res1 gene Proteins 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 101150032953 ins1 gene Proteins 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 240000008168 Ficus benjamina Species 0.000 description 1
- 101001047515 Homo sapiens Lethal(2) giant larvae protein homolog 1 Proteins 0.000 description 1
- 101150089655 Ins2 gene Proteins 0.000 description 1
- 102100022956 Lethal(2) giant larvae protein homolog 1 Human genes 0.000 description 1
- 101001047513 Mus musculus Lethal(2) giant larvae protein homolog 1 Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 101100072652 Xenopus laevis ins-b gene Proteins 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 235000013618 yogurt Nutrition 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007108145A JP2008270343A (ja) | 2007-04-17 | 2007-04-17 | 不揮発性半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200908343A true TW200908343A (en) | 2009-02-16 |
Family
ID=39871333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097111859A TW200908343A (en) | 2007-04-17 | 2008-04-01 | Non-volatile semiconductor memory device |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080258205A1 (ko) |
JP (1) | JP2008270343A (ko) |
KR (1) | KR100964759B1 (ko) |
CN (1) | CN101290800B (ko) |
TW (1) | TW200908343A (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5355063B2 (ja) * | 2008-12-16 | 2013-11-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5454852B2 (ja) * | 2008-12-26 | 2014-03-26 | 株式会社東芝 | フラッシュメモリ |
KR20100080240A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | 플래시메모리 소자 및 그 제조 방법 |
KR20100080190A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | 플래시메모리 소자 및 그 제조 방법 |
WO2010082328A1 (ja) | 2009-01-15 | 2010-07-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5898294B2 (ja) * | 2009-01-15 | 2016-04-06 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5385307B2 (ja) * | 2009-01-15 | 2014-01-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN101789267B (zh) * | 2009-01-22 | 2012-11-07 | 华邦电子股份有限公司 | 非易失性存储器的固有阈值电压的测定方法 |
JP2010183022A (ja) | 2009-02-09 | 2010-08-19 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP2010267341A (ja) * | 2009-05-15 | 2010-11-25 | Renesas Electronics Corp | 半導体装置 |
US8975685B2 (en) * | 2012-08-31 | 2015-03-10 | Maxim Integrated Products, Inc. | N-channel multi-time programmable memory devices |
US8848454B2 (en) * | 2012-10-02 | 2014-09-30 | United Microelectronics Corp. | Method for programming non-volatile memory cell, non-volatile memory array and non-volatile memory apparatus |
TWI514391B (zh) * | 2013-07-23 | 2015-12-21 | Winbond Electronics Corp | 半導體記憶裝置及其抹除方法 |
JP6510289B2 (ja) | 2015-03-30 | 2019-05-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2018092692A (ja) * | 2016-11-30 | 2018-06-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9997253B1 (en) * | 2016-12-08 | 2018-06-12 | Cypress Semiconductor Corporation | Non-volatile memory array with memory gate line and source line scrambling |
JP2021034696A (ja) * | 2019-08-29 | 2021-03-01 | キオクシア株式会社 | 半導体記憶装置 |
US20220254799A1 (en) * | 2021-02-05 | 2022-08-11 | Macronix International Co., Ltd. | Semiconductor device and operation method thereof |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408115A (en) * | 1994-04-04 | 1995-04-18 | Motorola Inc. | Self-aligned, split-gate EEPROM device |
CN101388396B (zh) * | 2001-11-21 | 2012-07-04 | 夏普株式会社 | 半导体存储器件及其制造和操作方法及便携式电子装置 |
JP4489359B2 (ja) * | 2003-01-31 | 2010-06-23 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JP2004303918A (ja) * | 2003-03-31 | 2004-10-28 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP4593159B2 (ja) * | 2003-05-28 | 2010-12-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7161833B2 (en) * | 2004-02-06 | 2007-01-09 | Sandisk Corporation | Self-boosting system for flash memory cells |
JP4601316B2 (ja) * | 2004-03-31 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US7164603B2 (en) * | 2004-04-26 | 2007-01-16 | Yen-Hao Shih | Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory |
US7209390B2 (en) * | 2004-04-26 | 2007-04-24 | Macronix International Co., Ltd. | Operation scheme for spectrum shift in charge trapping non-volatile memory |
US7075828B2 (en) * | 2004-04-26 | 2006-07-11 | Macronix International Co., Intl. | Operation scheme with charge balancing erase for charge trapping non-volatile memory |
US7133313B2 (en) * | 2004-04-26 | 2006-11-07 | Macronix International Co., Ltd. | Operation scheme with charge balancing for charge trapping non-volatile memory |
JP4664707B2 (ja) * | 2004-05-27 | 2011-04-06 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP2006286118A (ja) * | 2005-04-01 | 2006-10-19 | Matsushita Electric Ind Co Ltd | 閾値電圧制御機能を有する不揮発性記憶装置 |
TWI260769B (en) * | 2005-08-23 | 2006-08-21 | Ememory Technology Inc | Non-volatile memory and operating method thereof |
US20080121980A1 (en) * | 2006-06-21 | 2008-05-29 | Macronix International Co., Ltd. | Bottom Dielectric Structures and High-K Memory Structures in Memory Devices and Methods for Expanding a Second Bit Operation Window |
US7700994B2 (en) * | 2006-12-07 | 2010-04-20 | Tower Semiconductor Ltd. | Single poly CMOS logic memory cell for RFID application and its programming and erasing method |
-
2007
- 2007-04-17 JP JP2007108145A patent/JP2008270343A/ja active Pending
-
2008
- 2008-04-01 TW TW097111859A patent/TW200908343A/zh unknown
- 2008-04-03 KR KR1020080031260A patent/KR100964759B1/ko not_active IP Right Cessation
- 2008-04-15 US US12/103,697 patent/US20080258205A1/en not_active Abandoned
- 2008-04-17 CN CN2008100914816A patent/CN101290800B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100964759B1 (ko) | 2010-06-21 |
JP2008270343A (ja) | 2008-11-06 |
KR20080093872A (ko) | 2008-10-22 |
US20080258205A1 (en) | 2008-10-23 |
CN101290800B (zh) | 2012-03-21 |
CN101290800A (zh) | 2008-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200908343A (en) | Non-volatile semiconductor memory device | |
JP4601287B2 (ja) | 不揮発性半導体記憶装置 | |
JP5466421B2 (ja) | ポリ間電荷トラップ構造体を有する浮遊ゲートメモリ素子 | |
TWI359496B (en) | Nonvolatile semiconductor memory device | |
JP5149539B2 (ja) | 半導体装置 | |
US20090050956A1 (en) | Semiconductor memory device and method of manufacturing the same | |
JP5524632B2 (ja) | 半導体記憶装置 | |
TWI413261B (zh) | 半導體裝置 | |
JP2010118530A (ja) | 不揮発性半導体記憶装置 | |
JP2007193862A (ja) | 不揮発性半導体記憶装置 | |
JP2006339599A (ja) | 半導体装置およびその製造方法 | |
JP2004214365A (ja) | 不揮発性半導体メモリ装置およびその動作方法 | |
JP2008288588A (ja) | フラッシュメモリ素子、その製造方法及び動作方法 | |
JP2005142354A (ja) | 不揮発性半導体記憶装置及びその駆動方法及びその製造方法 | |
TW201705283A (zh) | 半導體裝置及其製造方法 | |
WO2008041536A1 (fr) | Dispositif de stockage à semi-conducteurs non volatile et son procédé de fonctionnement | |
CN112820732A (zh) | 半导体器件 | |
JP2004158614A (ja) | 不揮発性半導体メモリ装置およびそのデータ書き込み方法 | |
JP6001933B2 (ja) | 半導体記憶装置 | |
TW201826501A (zh) | 半導體裝置及其製造方法 | |
JP2010129772A (ja) | 不揮発性半導体記憶装置 | |
JP2003078045A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
JP2006236424A (ja) | 不揮発性メモリデバイス、および、その電荷注入方法 | |
TWI612640B (zh) | 記憶元件及其製造方法 | |
JP2014160846A (ja) | 半導体記憶装置 |