TW200908224A - Phase change memory device and method of fabricating the same - Google Patents
Phase change memory device and method of fabricating the same Download PDFInfo
- Publication number
- TW200908224A TW200908224A TW097119410A TW97119410A TW200908224A TW 200908224 A TW200908224 A TW 200908224A TW 097119410 A TW097119410 A TW 097119410A TW 97119410 A TW97119410 A TW 97119410A TW 200908224 A TW200908224 A TW 200908224A
- Authority
- TW
- Taiwan
- Prior art keywords
- phase change
- layer
- change material
- opening
- wetting
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000012782 phase change material Substances 0.000 claims abstract description 145
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 238000009736 wetting Methods 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 30
- 239000007772 electrode material Substances 0.000 claims description 10
- -1 TiAIN Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 229910010038 TiAl Inorganic materials 0.000 claims description 3
- 229910010041 TiAlC Inorganic materials 0.000 claims description 3
- 229910010052 TiAlO Inorganic materials 0.000 claims description 3
- 229910008482 TiSiN Inorganic materials 0.000 claims description 3
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 184
- 239000011229 interlayer Substances 0.000 description 36
- 239000000758 substrate Substances 0.000 description 11
- 239000011800 void material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070077510A KR20090013419A (ko) | 2007-08-01 | 2007-08-01 | 상변화 기억 소자 및 그 형성 방법 |
| US12/073,210 US20090035514A1 (en) | 2007-08-01 | 2008-03-03 | Phase change memory device and method of fabricating the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200908224A true TW200908224A (en) | 2009-02-16 |
Family
ID=40332107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097119410A TW200908224A (en) | 2007-08-01 | 2008-05-26 | Phase change memory device and method of fabricating the same |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20090035514A1 (ja) |
| JP (1) | JP2009038379A (ja) |
| KR (1) | KR20090013419A (ja) |
| CN (1) | CN101359718A (ja) |
| DE (1) | DE102008026889A1 (ja) |
| TW (1) | TW200908224A (ja) |
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| KR101499260B1 (ko) | 2006-05-12 | 2015-03-05 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 상 변화 메모리 재료의 저온 증착 |
| CN102352488B (zh) | 2006-11-02 | 2016-04-06 | 诚实公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
| US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
| KR101458953B1 (ko) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법 |
| JP5650880B2 (ja) | 2007-10-31 | 2015-01-07 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 非晶質Ｇｅ／Ｔｅ蒸着方法 |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| KR100953960B1 (ko) * | 2008-03-28 | 2010-04-21 | 삼성전자주식회사 | 콘택 구조체, 이를 채택하는 반도체 소자 및 그 제조방법들 |
| WO2009152108A2 (en) * | 2008-06-10 | 2009-12-17 | Advanced Technology Materials, Inc. | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY |
| KR101525588B1 (ko) * | 2008-09-30 | 2015-06-03 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
| US7785978B2 (en) | 2009-02-04 | 2010-08-31 | Micron Technology, Inc. | Method of forming memory cell using gas cluster ion beams |
| KR101069655B1 (ko) | 2009-02-26 | 2011-10-04 | 주식회사 하이닉스반도체 | 상변화 메모리 소자의 제조방법 |
| KR20110015907A (ko) * | 2009-08-10 | 2011-02-17 | 삼성전자주식회사 | 저항체를 이용한 멀티 레벨 메모리 장치 |
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| US8017433B2 (en) * | 2010-02-09 | 2011-09-13 | International Business Machines Corporation | Post deposition method for regrowth of crystalline phase change material |
| KR101163046B1 (ko) * | 2010-07-08 | 2012-07-05 | 에스케이하이닉스 주식회사 | 상변화 메모리 소자의 제조 방법 |
| CN102468434A (zh) * | 2010-11-17 | 2012-05-23 | 中芯国际集成电路制造(北京)有限公司 | 相变存储器的制作方法 |
| CN102468437B (zh) * | 2010-11-19 | 2013-09-04 | 中芯国际集成电路制造(北京)有限公司 | 相变存储器的制作方法 |
| KR101781483B1 (ko) | 2010-12-03 | 2017-09-26 | 삼성전자 주식회사 | 가변 저항 메모리 소자의 형성 방법 |
| CN102544355B (zh) * | 2010-12-09 | 2014-12-24 | 中国科学院上海微系统与信息技术研究所 | 相变存储材料及其制备方法、具有相变存储材料的存储器及其制备方法 |
| US8524599B2 (en) * | 2011-03-17 | 2013-09-03 | Micron Technology, Inc. | Methods of forming at least one conductive element and methods of forming a semiconductor structure |
| US8486743B2 (en) | 2011-03-23 | 2013-07-16 | Micron Technology, Inc. | Methods of forming memory cells |
| US20130001499A1 (en) * | 2011-06-28 | 2013-01-03 | International Business Machines Corporation | Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells |
| KR101823500B1 (ko) * | 2011-07-11 | 2018-01-31 | 삼성전자주식회사 | 상변화 메모리 장치의 제조 방법 |
| JP2013055258A (ja) * | 2011-09-05 | 2013-03-21 | Ulvac Japan Ltd | 相変化メモリの形成方法、及び相変化メモリの形成装置 |
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| US8723155B2 (en) | 2011-11-17 | 2014-05-13 | Micron Technology, Inc. | Memory cells and integrated devices |
| US9252188B2 (en) | 2011-11-17 | 2016-02-02 | Micron Technology, Inc. | Methods of forming memory cells |
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| CN103378288B (zh) * | 2012-04-28 | 2015-01-21 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器的形成方法 |
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| US9231197B2 (en) | 2012-11-12 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Logic compatible RRAM structure and process |
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| US8916414B2 (en) * | 2013-03-13 | 2014-12-23 | Macronix International Co., Ltd. | Method for making memory cell by melting phase change material in confined space |
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| US10485138B2 (en) * | 2014-11-12 | 2019-11-19 | Ge Aviation Systems Llc | Heat sink assemblies for transient cooling |
| CN105261701B (zh) * | 2015-09-09 | 2017-12-08 | 江苏时代全芯存储科技有限公司 | 制造相变化记忆体的方法 |
| TWI625874B (zh) * | 2015-11-05 | 2018-06-01 | 華邦電子股份有限公司 | 導電橋接式隨機存取記憶體 |
| FR3076074A1 (fr) * | 2017-12-21 | 2019-06-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif traversant |
| JP6989553B2 (ja) * | 2019-03-18 | 2022-01-05 | 株式会社東芝 | 抵抗変化型メモリ |
| US10741756B1 (en) | 2019-05-29 | 2020-08-11 | International Business Machines Corporation | Phase change memory with a patterning scheme for tantalum nitride and silicon nitride layers |
| CN110707213B (zh) * | 2019-11-21 | 2022-11-29 | 北京信息科技大学 | 一种具有高耐压自限流性能的阻变型选通器及制备方法 |
| US11563173B2 (en) * | 2020-01-07 | 2023-01-24 | International Business Machines Corporation | PCM cell with resistance drift correction |
| US11489113B2 (en) * | 2020-04-17 | 2022-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, memory cell and method of forming the same |
| CN113078625B (zh) * | 2021-03-24 | 2023-02-17 | 重庆邮电大学 | 一种基于硫系化合物的浪涌保护阵列及制备方法 |
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| JP2005244178A (ja) * | 2004-01-26 | 2005-09-08 | Toshiba Corp | 半導体装置の製造方法 |
| KR100612906B1 (ko) * | 2004-08-02 | 2006-08-14 | 삼성전자주식회사 | 상변화 기억 소자의 형성 방법 |
| US6972429B1 (en) * | 2004-12-16 | 2005-12-06 | Macronix International Co, Ltd. | Chalcogenide random access memory and method of fabricating the same |
| US20070045606A1 (en) * | 2005-08-30 | 2007-03-01 | Michele Magistretti | Shaping a phase change layer in a phase change memory cell |
| KR100810615B1 (ko) * | 2006-09-20 | 2008-03-06 | 삼성전자주식회사 | 고온 상전이 패턴을 구비한 상전이 메모리소자 및 그제조방법 |
| US7476587B2 (en) * | 2006-12-06 | 2009-01-13 | Macronix International Co., Ltd. | Method for making a self-converged memory material element for memory cell |
| KR20070077510A (ko) | 2007-07-07 | 2007-07-26 | 김인식 | 쌀눈을 함유한 떡의 제조방법 및 그 제조방법에 의해구현된 쌀눈 떡 |
-
2007
- 2007-08-01 KR KR1020070077510A patent/KR20090013419A/ko not_active Application Discontinuation
-
2008
- 2008-03-03 US US12/073,210 patent/US20090035514A1/en not_active Abandoned
- 2008-05-26 TW TW097119410A patent/TW200908224A/zh unknown
- 2008-06-05 DE DE102008026889A patent/DE102008026889A1/de not_active Withdrawn
- 2008-07-15 CN CNA200810136087XA patent/CN101359718A/zh active Pending
- 2008-07-31 JP JP2008198205A patent/JP2009038379A/ja active Pending
-
2010
- 2010-10-22 US US12/910,672 patent/US20110031461A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20110031461A1 (en) | 2011-02-10 |
| US20090035514A1 (en) | 2009-02-05 |
| DE102008026889A1 (de) | 2009-02-05 |
| CN101359718A (zh) | 2009-02-04 |
| KR20090013419A (ko) | 2009-02-05 |
| JP2009038379A (ja) | 2009-02-19 |
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