TW200802653A - Semiconductor apparatus and method of producing the same - Google Patents

Semiconductor apparatus and method of producing the same

Info

Publication number
TW200802653A
TW200802653A TW096112865A TW96112865A TW200802653A TW 200802653 A TW200802653 A TW 200802653A TW 096112865 A TW096112865 A TW 096112865A TW 96112865 A TW96112865 A TW 96112865A TW 200802653 A TW200802653 A TW 200802653A
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
insulating film
hole
electrode pad
conductive wiring
Prior art date
Application number
TW096112865A
Other languages
English (en)
Inventor
Tohru Ida
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200802653A publication Critical patent/TW200802653A/zh

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L2924/0001—Technical content checked by a classifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096112865A 2006-04-14 2007-04-12 Semiconductor apparatus and method of producing the same TW200802653A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006112779 2006-04-14
JP2006345014A JP2007305960A (ja) 2006-04-14 2006-12-21 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW200802653A true TW200802653A (en) 2008-01-01

Family

ID=38604080

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096112865A TW200802653A (en) 2006-04-14 2007-04-12 Semiconductor apparatus and method of producing the same

Country Status (5)

Country Link
US (1) US20070241457A1 (zh)
JP (1) JP2007305960A (zh)
KR (1) KR100887917B1 (zh)
CN (1) CN101055857A (zh)
TW (1) TW200802653A (zh)

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JP2008300718A (ja) * 2007-06-01 2008-12-11 Toshiba Corp 半導体装置および半導体装置の製造方法
JP4799543B2 (ja) * 2007-12-27 2011-10-26 株式会社東芝 半導体パッケージ及びカメラモジュール
JP2009181981A (ja) * 2008-01-29 2009-08-13 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP4713602B2 (ja) * 2008-02-21 2011-06-29 パナソニック株式会社 基板モジュールおよびその製造方法ならびに電子機器
JP5078725B2 (ja) * 2008-04-22 2012-11-21 ラピスセミコンダクタ株式会社 半導体装置
CN101582397B (zh) * 2008-05-16 2010-12-29 精材科技股份有限公司 半导体装置及其制造方法
JP2009295859A (ja) * 2008-06-06 2009-12-17 Oki Semiconductor Co Ltd 半導体装置および半導体装置の製造方法
JP4601686B2 (ja) * 2008-06-17 2010-12-22 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
DE102008033395B3 (de) * 2008-07-16 2010-02-04 Austriamicrosystems Ag Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement
JP5242282B2 (ja) * 2008-07-31 2013-07-24 株式会社東芝 半導体装置とその製造方法
DE102008052244A1 (de) * 2008-10-18 2010-04-22 Carl Freudenberg Kg Flexible Leiterplatte
JP5596919B2 (ja) * 2008-11-26 2014-09-24 キヤノン株式会社 半導体装置の製造方法
JP2010177569A (ja) * 2009-01-30 2010-08-12 Panasonic Corp 光学デバイス及びその製造方法
CN101866905B (zh) * 2009-04-16 2012-05-30 日月光半导体制造股份有限公司 基板结构及其制造方法
JP5574639B2 (ja) * 2009-08-21 2014-08-20 三菱電機株式会社 半導体装置およびその製造方法
JP5323637B2 (ja) * 2009-09-30 2013-10-23 京セラ株式会社 弾性波装置及びその製造方法
KR101759504B1 (ko) 2009-10-09 2017-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
FR2959866A1 (fr) * 2010-05-06 2011-11-11 St Microelectronics Crolles 2 Procede de realisation d'au moins une liaison traversante electriquement conductrice au sein d'un substrat semi-conducteur dans un circuit integre et circuit integre correspondant.
JP5598420B2 (ja) * 2011-05-24 2014-10-01 株式会社デンソー 電子デバイスの製造方法
JP5957840B2 (ja) * 2011-10-04 2016-07-27 ソニー株式会社 半導体装置の製造方法
JP5810921B2 (ja) * 2012-01-06 2015-11-11 凸版印刷株式会社 半導体装置の製造方法
US9935038B2 (en) 2012-04-11 2018-04-03 Taiwan Semiconductor Manufacturing Company Semiconductor device packages and methods
JP6309243B2 (ja) 2013-10-30 2018-04-11 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
US9379041B2 (en) 2013-12-11 2016-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fan out package structure
KR101898404B1 (ko) 2014-12-17 2018-09-12 미쓰이 가가쿠 가부시키가이샤 기판 중간체, 관통 비어 전극 기판 및 관통 비어 전극 형성 방법
JP6335132B2 (ja) 2015-03-13 2018-05-30 東芝メモリ株式会社 半導体装置、および、半導体装置の製造方法
KR102649896B1 (ko) * 2015-03-31 2024-03-22 하마마츠 포토닉스 가부시키가이샤 반도체 장치
CN108352321B (zh) * 2015-10-28 2022-09-16 奥林巴斯株式会社 半导体装置
JP6663259B2 (ja) * 2016-03-15 2020-03-11 エイブリック株式会社 半導体装置とその製造方法
CN108962879A (zh) * 2017-05-22 2018-12-07 联华电子股份有限公司 电容器及其制造方法
JP6499341B2 (ja) * 2018-03-13 2019-04-10 ラピスセミコンダクタ株式会社 半導体装置
JP6926294B2 (ja) * 2018-11-29 2021-08-25 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP2019087768A (ja) * 2019-03-13 2019-06-06 ラピスセミコンダクタ株式会社 半導体装置
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