JP5078725B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5078725B2 JP5078725B2 JP2008111087A JP2008111087A JP5078725B2 JP 5078725 B2 JP5078725 B2 JP 5078725B2 JP 2008111087 A JP2008111087 A JP 2008111087A JP 2008111087 A JP2008111087 A JP 2008111087A JP 5078725 B2 JP5078725 B2 JP 5078725B2
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- marking
- area
- semiconductor substrate
- back surface
- image sensor
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- 239000004065 semiconductor Substances 0.000 title claims description 61
- 239000000758 substrate Substances 0.000 claims description 62
- 230000001681 protective effect Effects 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 description 33
- 239000011521 glass Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000010330 laser marking Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
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- 230000001771 impaired effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
Classifications
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
図2は、本発明の第1実施例であるW−CSP構造を有するイメージセンサ1の断面構造図である。シリコン単結晶からなる半導体基板100は、イメージセンサ1の本体を構成し、その表面にCMOS回路或いはCCD等の受光素子140が形成されている。半導体基板100上には、多数の受光素子が画素数分だけ形成されており、外部に設けられるレンズ等の光学系によって撮像対象から発せられた光が受光素子140の受光面に結像されるようになっている。受光素子140は受光した光の強度に応じた光電変換信号を検知出力信号として出力する。そして、各受光素子の位置と検知出力信号から画像データが生成される。
図8は、本発明の第2実施例であるW−CSP構造を有するイメージセンサ2の断面構造図である。イメージセンサ2は、捺印マーク200が半導体基板100の裏面側ではなく、ガラス基板102に貼着された保護フィルム150上に形成される点において第1実施例に係るイメージセンサ1と異なる。すなわち、イメージセンサ2の保護フィルム150の直下には、捺印マークの形成を避けるべき裏面配線が存在せず、また、保護フィルム150は、イメージセンサが実装基板に実装される前に剥離されるため、使用時において捺印マークが受光の妨げとなることはなく、その全面を捺印エリアとすることができる。尚、通常、保護フィルム150はダイシング前に剥離されるのが一般的であるが、保護フィルムを貼り付けたまま、ウエハ状態或いは個片化されたチップ状態で出荷される場合もあり得る。ユーザにおいては保護フィルム150を剥離する前に保護フィルム150上に形成された捺印マーク200を実装基板への実装する際の位置認識マークや方向認識マークとして使用することができる。
100 半導体基板
102 ガラス基板
105a 貫通電極
105b 裏面配線
108 バンプ半田
110 表面電極
111 絶縁膜
150 保護フィルム
200 捺印マーク
300 捺印エリア
Claims (6)
- 矩形状の半導体基板と、前記半導体基板の表面に形成された複数の表面電極と、前記半導体基板の内部において前記半導体基板の裏面から前記表面電極の各々に達する複数の貫通孔と、前記貫通孔の各々の内壁を覆う導電体と、前記半導体基板の裏面に設けられて前記導電体に接続された裏面配線網と、前記裏面配線網を覆う絶縁膜と、前記絶縁膜上に形成された捺印マークを有する捺印エリアと、を含む半導体装置であって、
前記捺印エリアの外縁が前記捺印マーク形成面に平行な方向において前記裏面配線網から離間し、且つ前記半導体基板の外縁に一致していることを特徴とする半導体装置。 - 前記捺印エリアは、前記半導体基板のコーナに配置されていることを特徴とする請求項1に記載の半導体装置。
- 前記捺印マークはレーザ照射によって形成されることを特徴とする請求項1又は2に記載の半導体装置。
- 前記半導体基板上に形成された透明基板と、
前記光透過性基板の全面に貼着された保護フィルムと、
前記保護フィルム上に形成された捺印マークを有する表面捺印エリアと、
を更に有することを特徴とする請求項1乃至3のいずれか1に記載の半導体装置。 - 前記半導体基板は、その表面に受光素子を有し、
前記表面捺印エリアは、前記保護フィルム上の前記受光素子によって受光されるべき撮像対象からの光が透過する受光エリア以外の領域に配置されることを特徴とする請求項4に記載の半導体装置。 - 前記受光エリアは、前記保護フィルム上の中央部に配置され、
前記表面捺印エリアは、前記保護フィルム上の前記受光エリアを囲む外周領域に配置されることを特徴とする請求項5に記載の半導体装置。
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JP2008111087A JP5078725B2 (ja) | 2008-04-22 | 2008-04-22 | 半導体装置 |
CN201510217313.7A CN104952852B (zh) | 2008-04-22 | 2009-01-20 | 半导体器件的制造方法 |
CN200910005615.2A CN101567350B (zh) | 2008-04-22 | 2009-01-20 | 半导体器件 |
CN201510217327.9A CN104882437A (zh) | 2008-04-22 | 2009-01-20 | 半导体器件 |
US12/403,430 US20090289319A1 (en) | 2008-04-22 | 2009-03-13 | Semiconductor device |
US14/140,842 US20140103528A1 (en) | 2008-04-22 | 2013-12-26 | Semiconductor device |
KR1020150092374A KR101547091B1 (ko) | 2008-04-22 | 2015-06-29 | 반도체 장치 |
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JP2008111087A JP5078725B2 (ja) | 2008-04-22 | 2008-04-22 | 半導体装置 |
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JP2016171149A (ja) | 2015-03-11 | 2016-09-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
KR102503892B1 (ko) | 2015-12-31 | 2023-02-28 | 삼성전자주식회사 | 패키지-온-패키지 타입의 반도체 패키지 및 그 제조방법 |
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CN108693189A (zh) * | 2018-04-02 | 2018-10-23 | 中国工程物理研究院激光聚变研究中心 | 大口径熔石英光学元件基准标识的构建方法 |
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CN101567350B (zh) | 2016-06-15 |
CN104952852B (zh) | 2018-06-12 |
CN104882437A (zh) | 2015-09-02 |
CN104952852A (zh) | 2015-09-30 |
JP2009266862A (ja) | 2009-11-12 |
CN101567350A (zh) | 2009-10-28 |
KR20150082164A (ko) | 2015-07-15 |
KR101547091B1 (ko) | 2015-08-24 |
US20090289319A1 (en) | 2009-11-26 |
US20140103528A1 (en) | 2014-04-17 |
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