WO2009019865A1 - 半導体装置とその製造方法および画像表示装置 - Google Patents

半導体装置とその製造方法および画像表示装置 Download PDF

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Publication number
WO2009019865A1
WO2009019865A1 PCT/JP2008/002124 JP2008002124W WO2009019865A1 WO 2009019865 A1 WO2009019865 A1 WO 2009019865A1 JP 2008002124 W JP2008002124 W JP 2008002124W WO 2009019865 A1 WO2009019865 A1 WO 2009019865A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
manufacturing
image display
semiconductor
same
Prior art date
Application number
PCT/JP2008/002124
Other languages
English (en)
French (fr)
Inventor
Seiichi Nakatani
Yoshihisa Yamashita
Takashi Kitae
Susumu Sawada
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to CN2008801017873A priority Critical patent/CN101772834B/zh
Priority to JP2009526336A priority patent/JP4733768B2/ja
Priority to US12/672,127 priority patent/US8288778B2/en
Priority to EP08790388A priority patent/EP2178110A4/en
Publication of WO2009019865A1 publication Critical patent/WO2009019865A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

　より高密度に半導体素子を形成できる半導体装置およびその製造方法を提供する。併せてこの半導体装置を用いた画像表示装置の提供もする。 　一方の面から他方の面に貫通するスルーホールを有する樹脂フィルムと、前記スルーホールの内部に配置された有機半導体と、前記有機半導体の一方の端部を覆う絶縁膜と、前記絶縁膜を覆うゲート電極と、前記有機半導体の他方の端部と電気的に接続したソース電極と、前記有機半導体の他方の端部と電気的に接続したドレイン電極と、を有することを特徴とする半導体装置である。
PCT/JP2008/002124 2007-08-07 2008-08-06 半導体装置とその製造方法および画像表示装置 WO2009019865A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008801017873A CN101772834B (zh) 2007-08-07 2008-08-06 半导体装置及其制造方法以及图像显示装置
JP2009526336A JP4733768B2 (ja) 2007-08-07 2008-08-06 半導体装置とその製造方法および画像表示装置
US12/672,127 US8288778B2 (en) 2007-08-07 2008-08-06 Semiconductor device having semiconductor elements formed inside a resin film substrate
EP08790388A EP2178110A4 (en) 2007-08-07 2008-08-06 SEMICONDUCTOR COMPONENT, METHOD FOR THE PRODUCTION THEREOF AND PICTURE DISPLAY

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007205203 2007-08-07
JP2007-205203 2007-08-07

Publications (1)

Publication Number Publication Date
WO2009019865A1 true WO2009019865A1 (ja) 2009-02-12

Family

ID=40341106

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002124 WO2009019865A1 (ja) 2007-08-07 2008-08-06 半導体装置とその製造方法および画像表示装置

Country Status (7)

Country Link
US (1) US8288778B2 (ja)
EP (1) EP2178110A4 (ja)
JP (1) JP4733768B2 (ja)
KR (1) KR20100051628A (ja)
CN (1) CN101772834B (ja)
TW (1) TW200913337A (ja)
WO (1) WO2009019865A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113376A1 (ja) * 2009-03-31 2010-10-07 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
WO2010134234A1 (ja) * 2009-05-19 2010-11-25 パナソニック株式会社 フレキシブル半導体装置の製造方法
JP2012118341A (ja) * 2010-12-01 2012-06-21 Seiko Epson Corp 薄膜トランジスタ形成用基板、半導体装置、電気装置
JP2015501451A (ja) * 2011-10-28 2015-01-15 アップル インコーポレイテッド 隠蔽プリント回路及び構成要素取り付け部のためのビアを有するディスプレイ
WO2015046128A1 (ja) * 2013-09-27 2015-04-02 東レ株式会社 耐熱性樹脂膜およびその製造方法、加熱炉ならびに画像表示装置の製造方法
JP2016507777A (ja) * 2013-01-03 2016-03-10 アップル インコーポレイテッド 狭小な境界を有する電子デバイス用ディスプレイ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104851892A (zh) * 2015-05-12 2015-08-19 深圳市华星光电技术有限公司 窄边框柔性显示装置及其制作方法
TWI730277B (zh) * 2018-12-20 2021-06-11 華碩電腦股份有限公司 顯示裝置製造方法

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JP2007205203A (ja) 2006-01-31 2007-08-16 Toshiba Kyaria Kk ロータリ圧縮機及びこれを用いた冷凍サイクル装置

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8581247B2 (en) 2009-03-31 2013-11-12 Panasonic Corporation Flexible semiconductor device having gate electrode disposed within an opening of a resin film
US8895373B2 (en) 2009-03-31 2014-11-25 Panasonic Corporation Method for manufacturing flexible semiconductor device having gate electrode disposed within an opening of a resin film
JP4653860B2 (ja) * 2009-03-31 2011-03-16 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
US20120001173A1 (en) * 2009-03-31 2012-01-05 Takeshi Suzuki Flexible semiconductor device and method for manufacturing same
CN102318073A (zh) * 2009-03-31 2012-01-11 松下电器产业株式会社 挠性半导体装置及其制造方法
WO2010113376A1 (ja) * 2009-03-31 2010-10-07 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
JP5449172B2 (ja) * 2009-05-19 2014-03-19 パナソニック株式会社 フレキシブル半導体装置の製造方法
US8367488B2 (en) 2009-05-19 2013-02-05 Panasonic Corporation Manufacturing method of flexible semiconductor device
WO2010134234A1 (ja) * 2009-05-19 2010-11-25 パナソニック株式会社 フレキシブル半導体装置の製造方法
JP2012118341A (ja) * 2010-12-01 2012-06-21 Seiko Epson Corp 薄膜トランジスタ形成用基板、半導体装置、電気装置
JP2015501451A (ja) * 2011-10-28 2015-01-15 アップル インコーポレイテッド 隠蔽プリント回路及び構成要素取り付け部のためのビアを有するディスプレイ
JP2016507777A (ja) * 2013-01-03 2016-03-10 アップル インコーポレイテッド 狭小な境界を有する電子デバイス用ディスプレイ
US9504124B2 (en) 2013-01-03 2016-11-22 Apple Inc. Narrow border displays for electronic devices
WO2015046128A1 (ja) * 2013-09-27 2015-04-02 東レ株式会社 耐熱性樹脂膜およびその製造方法、加熱炉ならびに画像表示装置の製造方法
KR20160065806A (ko) * 2013-09-27 2016-06-09 도레이 카부시키가이샤 내열성 수지막 및 그 제조 방법, 가열로 및 화상 표시 장치의 제조 방법
JPWO2015046128A1 (ja) * 2013-09-27 2017-03-09 東レ株式会社 耐熱性樹脂膜およびその製造方法、加熱炉ならびに画像表示装置の製造方法
KR20200035495A (ko) * 2013-09-27 2020-04-03 도레이 카부시키가이샤 내열성 수지막 및 그 제조 방법, 가열로 및 화상 표시 장치의 제조 방법
KR102141355B1 (ko) 2013-09-27 2020-08-05 도레이 카부시키가이샤 내열성 수지막 및 그 제조 방법, 가열로 및 화상 표시 장치의 제조 방법
KR102236562B1 (ko) 2013-09-27 2021-04-06 도레이 카부시키가이샤 내열성 수지막 및 그 제조 방법, 가열로 및 화상 표시 장치의 제조 방법

Also Published As

Publication number Publication date
US8288778B2 (en) 2012-10-16
EP2178110A4 (en) 2012-08-29
EP2178110A1 (en) 2010-04-21
US20110204366A1 (en) 2011-08-25
CN101772834B (zh) 2012-04-04
TW200913337A (en) 2009-03-16
JP4733768B2 (ja) 2011-07-27
CN101772834A (zh) 2010-07-07
JPWO2009019865A1 (ja) 2010-10-28
KR20100051628A (ko) 2010-05-17

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