TW200739264A - Positive photosensitive resin composition and semiconductor device and display device including the same - Google Patents
Positive photosensitive resin composition and semiconductor device and display device including the sameInfo
- Publication number
- TW200739264A TW200739264A TW095144125A TW95144125A TW200739264A TW 200739264 A TW200739264 A TW 200739264A TW 095144125 A TW095144125 A TW 095144125A TW 95144125 A TW95144125 A TW 95144125A TW 200739264 A TW200739264 A TW 200739264A
- Authority
- TW
- Taiwan
- Prior art keywords
- resin composition
- photosensitive resin
- positive photosensitive
- same
- compound
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05569—Disposition the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polyamides (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005346804 | 2005-11-30 | ||
JP2006010837 | 2006-01-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200739264A true TW200739264A (en) | 2007-10-16 |
Family
ID=38092056
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095144125A TW200739264A (en) | 2005-11-30 | 2006-11-29 | Positive photosensitive resin composition and semiconductor device and display device including the same |
TW102125354A TW201346448A (zh) | 2005-11-30 | 2006-11-29 | 正型感光性樹脂組成物,使用其之半導體裝置及顯示裝置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102125354A TW201346448A (zh) | 2005-11-30 | 2006-11-29 | 正型感光性樹脂組成物,使用其之半導體裝置及顯示裝置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8080350B2 (zh) |
EP (2) | EP1965256B1 (zh) |
JP (2) | JP4692547B2 (zh) |
KR (1) | KR101183395B1 (zh) |
CN (2) | CN102393607B (zh) |
MY (1) | MY151139A (zh) |
TW (2) | TW200739264A (zh) |
WO (1) | WO2007063721A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI490649B (zh) * | 2010-09-02 | 2015-07-01 | Toray Industries | 正型感光性組成物、由其形成的硬化膜及具有硬化膜的元件 |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI258176B (en) * | 2005-05-12 | 2006-07-11 | Siliconware Precision Industries Co Ltd | Semiconductor device and fabrication method thereof |
JP4744318B2 (ja) * | 2006-02-21 | 2011-08-10 | 旭化成イーマテリアルズ株式会社 | ポジ型感光性樹脂組成物 |
MY146083A (en) * | 2007-02-19 | 2012-06-29 | Sumitomo Bakelite Co | Photosensitive resin composition, cured film, protective film, insulating film, semiconductor device and display device using the same |
US20080251919A1 (en) * | 2007-04-12 | 2008-10-16 | Chien-Hsueh Shih | Ultra-low resistance interconnect |
JP4245074B1 (ja) * | 2008-01-11 | 2009-03-25 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜およびそれを用いた半導体装置、表示体装置。 |
KR100914064B1 (ko) * | 2008-03-19 | 2009-08-28 | 제일모직주식회사 | 포지티브형 감광성 수지 조성물 |
US8440734B2 (en) * | 2008-07-08 | 2013-05-14 | Sumitomo Bakelite Company, Ltd. | Positive photosensitive resin composition, cured film, protecting film, insulating film, and semiconductor device and display device using the same |
KR101023089B1 (ko) | 2008-09-29 | 2011-03-24 | 제일모직주식회사 | 포지티브형 감광성 수지 조성물 |
KR101015859B1 (ko) * | 2008-10-07 | 2011-02-23 | 제일모직주식회사 | 포지티브형 감광성 수지 조성물 |
JP5410918B2 (ja) * | 2008-10-20 | 2014-02-05 | チェイル インダストリーズ インコーポレイテッド | ポジティブ型感光性樹脂組成物 |
JP5486201B2 (ja) * | 2009-02-25 | 2014-05-07 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物 |
JP5562585B2 (ja) * | 2009-07-06 | 2014-07-30 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物 |
KR101200140B1 (ko) * | 2009-08-31 | 2012-11-12 | 금호석유화학 주식회사 | 포지티브형 감광성 조성물 |
KR20120089650A (ko) * | 2009-10-16 | 2012-08-13 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 및 층간 절연막의 형성 방법 |
KR101333698B1 (ko) * | 2009-11-10 | 2013-11-27 | 제일모직주식회사 | 포지티브형 감광성 수지 조성물 |
KR101333704B1 (ko) | 2009-12-29 | 2013-11-27 | 제일모직주식회사 | 포지티브형 감광성 수지 조성물 |
WO2011089877A1 (ja) * | 2010-01-21 | 2011-07-28 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品 |
JP5365704B2 (ja) * | 2010-01-22 | 2013-12-11 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性重合体組成物、パターンの製造方法及び電子部品 |
CN102713756B (zh) | 2010-01-22 | 2014-10-15 | 日立化成杜邦微系统股份有限公司 | 感光性聚合物组合物、图形的制造方法以及电子部件 |
JP5625549B2 (ja) * | 2010-01-22 | 2014-11-19 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性重合体組成物、パターンの製造方法及び電子部品 |
KR20130016375A (ko) * | 2010-07-02 | 2013-02-14 | 도레이 카부시키가이샤 | 감광성 수지 조성물, 감광성 수지 조성물 필름 및 이들을 이용한 반도체 장치 |
KR20120066923A (ko) | 2010-12-15 | 2012-06-25 | 제일모직주식회사 | 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물 |
KR101423539B1 (ko) | 2010-12-20 | 2014-07-25 | 삼성전자 주식회사 | 포지티브형 감광성 수지 조성물 |
KR101400192B1 (ko) | 2010-12-31 | 2014-05-27 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자 |
BR112014000398B1 (pt) * | 2011-07-08 | 2020-03-17 | Rhodia Operations | Poliamida, processo para preparar uma poliamida, uso da poliamida, artigos e composição |
WO2013103140A1 (ja) * | 2012-01-06 | 2013-07-11 | 日立化成株式会社 | パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 |
JPWO2013103141A1 (ja) * | 2012-01-06 | 2015-05-11 | 日立化成株式会社 | パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 |
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- 2006-11-17 CN CN2011101665742A patent/CN102393607B/zh not_active Expired - Fee Related
- 2006-11-17 EP EP06832830.1A patent/EP1965256B1/en not_active Not-in-force
- 2006-11-17 US US12/085,751 patent/US8080350B2/en not_active Expired - Fee Related
- 2006-11-17 EP EP13171219.2A patent/EP2639638A1/en not_active Withdrawn
- 2006-11-17 CN CN2006800449692A patent/CN101322073B/zh not_active Expired - Fee Related
- 2006-11-17 MY MYPI20081840 patent/MY151139A/en unknown
- 2006-11-17 KR KR1020087015711A patent/KR101183395B1/ko not_active IP Right Cessation
- 2006-11-17 WO PCT/JP2006/322951 patent/WO2007063721A1/ja active Application Filing
- 2006-11-17 JP JP2007547898A patent/JP4692547B2/ja not_active Expired - Fee Related
- 2006-11-29 TW TW095144125A patent/TW200739264A/zh unknown
- 2006-11-29 TW TW102125354A patent/TW201346448A/zh unknown
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TWI490649B (zh) * | 2010-09-02 | 2015-07-01 | Toray Industries | 正型感光性組成物、由其形成的硬化膜及具有硬化膜的元件 |
Also Published As
Publication number | Publication date |
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EP1965256A4 (en) | 2011-04-06 |
KR101183395B1 (ko) | 2012-09-14 |
EP1965256B1 (en) | 2014-04-30 |
CN102393607A (zh) | 2012-03-28 |
CN102393607B (zh) | 2013-11-13 |
KR20080072083A (ko) | 2008-08-05 |
US20090166818A1 (en) | 2009-07-02 |
WO2007063721A1 (ja) | 2007-06-07 |
EP2639638A1 (en) | 2013-09-18 |
CN101322073A (zh) | 2008-12-10 |
CN101322073B (zh) | 2011-12-28 |
JPWO2007063721A1 (ja) | 2009-05-07 |
US8080350B2 (en) | 2011-12-20 |
TW201346448A (zh) | 2013-11-16 |
EP1965256A1 (en) | 2008-09-03 |
JP5071554B2 (ja) | 2012-11-14 |
JP2011102997A (ja) | 2011-05-26 |
MY151139A (en) | 2014-04-30 |
JP4692547B2 (ja) | 2011-06-01 |
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