TW200727352A - Manufacturing method for semiconductor chips - Google Patents
Manufacturing method for semiconductor chipsInfo
- Publication number
- TW200727352A TW200727352A TW095113758A TW95113758A TW200727352A TW 200727352 A TW200727352 A TW 200727352A TW 095113758 A TW095113758 A TW 095113758A TW 95113758 A TW95113758 A TW 95113758A TW 200727352 A TW200727352 A TW 200727352A
- Authority
- TW
- Taiwan
- Prior art keywords
- dividing
- insulating film
- etching
- groove portions
- semiconductor chips
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000001020 plasma etching Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005120815A JP4288252B2 (ja) | 2005-04-19 | 2005-04-19 | 半導体チップの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200727352A true TW200727352A (en) | 2007-07-16 |
Family
ID=36602692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095113758A TW200727352A (en) | 2005-04-19 | 2006-04-18 | Manufacturing method for semiconductor chips |
Country Status (4)
Country | Link |
---|---|
US (1) | US7871901B2 (zh) |
JP (1) | JP4288252B2 (zh) |
TW (1) | TW200727352A (zh) |
WO (1) | WO2006112524A1 (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8383436B2 (en) * | 2005-01-24 | 2013-02-26 | Panasonic Corporation | Manufacturing method for semiconductor chips, and semiconductor chip |
JP4275095B2 (ja) * | 2005-04-14 | 2009-06-10 | パナソニック株式会社 | 半導体チップの製造方法 |
JP2008159985A (ja) * | 2006-12-26 | 2008-07-10 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法 |
JP2008244132A (ja) * | 2007-03-27 | 2008-10-09 | Sanyo Electric Co Ltd | 半導体装置の製造方法および半導体装置 |
KR100828025B1 (ko) | 2007-06-13 | 2008-05-08 | 삼성전자주식회사 | 웨이퍼 절단 방법 |
JP5128897B2 (ja) * | 2007-10-23 | 2013-01-23 | 株式会社ディスコ | ウエーハの分割方法 |
JP6024076B2 (ja) | 2011-01-13 | 2016-11-09 | セイコーエプソン株式会社 | シリコンデバイスの製造方法 |
US8802545B2 (en) | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
JP5480923B2 (ja) | 2011-05-13 | 2014-04-23 | シャープ株式会社 | 半導体モジュールの製造方法及び半導体モジュール |
US10186458B2 (en) * | 2012-07-05 | 2019-01-22 | Infineon Technologies Ag | Component and method of manufacturing a component using an ultrathin carrier |
JP5982223B2 (ja) * | 2012-08-27 | 2016-08-31 | 東京エレクトロン株式会社 | プラズマ処理方法、及びプラズマ処理装置 |
US9553021B2 (en) * | 2012-09-03 | 2017-01-24 | Infineon Technologies Ag | Method for processing a wafer and method for dicing a wafer |
WO2014137905A2 (en) * | 2013-03-06 | 2014-09-12 | Plasma-Therm, Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US9443807B2 (en) * | 2013-09-06 | 2016-09-13 | Infineon Technologies Ag | Semiconductor device and method for manufacturing a semiconductor device |
US9633902B2 (en) * | 2015-03-10 | 2017-04-25 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device that includes dividing semiconductor substrate by dry etching |
JP6492286B2 (ja) * | 2015-09-25 | 2019-04-03 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP6521815B2 (ja) * | 2015-09-25 | 2019-05-29 | 株式会社ディスコ | 被加工物の加工方法 |
JP6524419B2 (ja) * | 2016-02-04 | 2019-06-05 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP2017163072A (ja) * | 2016-03-11 | 2017-09-14 | パナソニックIpマネジメント株式会社 | 素子チップおよびその製造方法 |
JP2019212772A (ja) * | 2018-06-05 | 2019-12-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019212771A (ja) * | 2018-06-05 | 2019-12-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP7083716B2 (ja) * | 2018-07-20 | 2022-06-13 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020017676A (ja) * | 2018-07-26 | 2020-01-30 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020017677A (ja) * | 2018-07-26 | 2020-01-30 | 株式会社ディスコ | ウェーハの加工方法 |
JP7138534B2 (ja) * | 2018-10-09 | 2022-09-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP7146555B2 (ja) * | 2018-10-10 | 2022-10-04 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061460A (ja) * | 2018-10-10 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061463A (ja) * | 2018-10-10 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061501A (ja) * | 2018-10-11 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061500A (ja) * | 2018-10-11 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP7382578B2 (ja) * | 2019-12-27 | 2023-11-17 | パナソニックIpマネジメント株式会社 | プラズマ処理方法および素子チップの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215652A (ja) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6448153B2 (en) * | 1996-10-29 | 2002-09-10 | Tru-Si Technologies, Inc. | Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners |
US6935724B2 (en) * | 1997-07-15 | 2005-08-30 | Silverbrook Research Pty Ltd | Ink jet nozzle having actuator with anchor positioned between nozzle chamber and actuator connection point |
JP3966168B2 (ja) | 2002-11-20 | 2007-08-29 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6897128B2 (en) * | 2002-11-20 | 2005-05-24 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device, plasma processing apparatus and plasma processing method |
JP3991872B2 (ja) * | 2003-01-23 | 2007-10-17 | 松下電器産業株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-04-19 JP JP2005120815A patent/JP4288252B2/ja active Active
-
2006
- 2006-04-17 US US11/911,918 patent/US7871901B2/en active Active
- 2006-04-17 WO PCT/JP2006/308479 patent/WO2006112524A1/en active Application Filing
- 2006-04-18 TW TW095113758A patent/TW200727352A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US7871901B2 (en) | 2011-01-18 |
JP2006303077A (ja) | 2006-11-02 |
JP4288252B2 (ja) | 2009-07-01 |
US20090093104A1 (en) | 2009-04-09 |
WO2006112524A1 (en) | 2006-10-26 |
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