TW200711066A - Manufacturing method for a semiconductor device, semiconductor device, circuit substrate and electronic device - Google Patents
Manufacturing method for a semiconductor device, semiconductor device, circuit substrate and electronic deviceInfo
- Publication number
- TW200711066A TW200711066A TW095120862A TW95120862A TW200711066A TW 200711066 A TW200711066 A TW 200711066A TW 095120862 A TW095120862 A TW 095120862A TW 95120862 A TW95120862 A TW 95120862A TW 200711066 A TW200711066 A TW 200711066A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- semiconductor wafer
- semiconductor device
- groove
- forming
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 16
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005177495 | 2005-06-17 | ||
JP2005335459A JP4544143B2 (ja) | 2005-06-17 | 2005-11-21 | 半導体装置の製造方法、半導体装置、回路基板及び電子機器 |
Publications (1)
Publication Number | Publication Date |
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TW200711066A true TW200711066A (en) | 2007-03-16 |
Family
ID=37572587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095120862A TW200711066A (en) | 2005-06-17 | 2006-06-12 | Manufacturing method for a semiconductor device, semiconductor device, circuit substrate and electronic device |
Country Status (4)
Country | Link |
---|---|
US (1) | US7456108B2 (zh) |
JP (1) | JP4544143B2 (zh) |
KR (1) | KR100786740B1 (zh) |
TW (1) | TW200711066A (zh) |
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US7838424B2 (en) * | 2007-07-03 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Enhanced reliability of wafer-level chip-scale packaging (WLCSP) die separation using dry etching |
JP2009111147A (ja) * | 2007-10-30 | 2009-05-21 | Denso Corp | 半導体チップ及びその製造方法 |
US7972940B2 (en) * | 2007-12-28 | 2011-07-05 | Micron Technology, Inc. | Wafer processing |
JP2009182178A (ja) * | 2008-01-31 | 2009-08-13 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
GB2459302A (en) * | 2008-04-18 | 2009-10-21 | Xsil Technology Ltd | A method of dicing wafers to give high die strength |
GB2459301B (en) * | 2008-04-18 | 2011-09-14 | Xsil Technology Ltd | A method of dicing wafers to give high die strength |
US7977802B2 (en) * | 2009-03-05 | 2011-07-12 | Stats Chippac Ltd. | Integrated circuit packaging system with stacked die and method of manufacture thereof |
US8609512B2 (en) * | 2009-03-27 | 2013-12-17 | Electro Scientific Industries, Inc. | Method for laser singulation of chip scale packages on glass substrates |
US20110012239A1 (en) * | 2009-07-17 | 2011-01-20 | Qualcomm Incorporated | Barrier Layer On Polymer Passivation For Integrated Circuit Packaging |
JP2011146453A (ja) * | 2010-01-13 | 2011-07-28 | Renesas Electronics Corp | 電子部品、半導体装置、及び半導体装置の製造方法 |
DE102010007127A1 (de) * | 2010-02-05 | 2011-08-11 | Ev Group E. Thallner Gmbh | Verfahren zur Behandlung eines temporär gebondeten Produktwafers |
JP2012195388A (ja) * | 2011-03-15 | 2012-10-11 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
US9209080B2 (en) * | 2012-12-14 | 2015-12-08 | Infineon Technologies Ag | Semiconductor device comprising a protective structure on a chip backside and method of producing the same |
WO2014126785A2 (en) * | 2013-02-13 | 2014-08-21 | Applied Materials, Inc. | Water soluble film and uv-curable film hybrid mask for wafer dicing using laser scribing and plasma etch |
KR20140101984A (ko) * | 2013-02-13 | 2014-08-21 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
JP2015118976A (ja) * | 2013-12-17 | 2015-06-25 | 株式会社ディスコ | デバイスウェーハの加工方法 |
JP2015119085A (ja) | 2013-12-19 | 2015-06-25 | 株式会社ディスコ | デバイスウェーハの加工方法 |
JP5967629B2 (ja) | 2014-11-17 | 2016-08-10 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 回路モジュール及びその製造方法 |
JP6441088B2 (ja) * | 2015-01-13 | 2018-12-19 | 株式会社Sumco | シリコンウェーハの製造方法及び半導体装置の製造方法 |
JP2017162876A (ja) * | 2016-03-07 | 2017-09-14 | 株式会社ジェイデバイス | 半導体パッケージの製造方法 |
US10529671B2 (en) | 2016-12-13 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and method for forming the same |
KR102442622B1 (ko) * | 2017-08-03 | 2022-09-13 | 삼성전자주식회사 | 반도체 소자 패키지 |
JP2019212769A (ja) * | 2018-06-05 | 2019-12-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019212839A (ja) * | 2018-06-07 | 2019-12-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP7106382B2 (ja) * | 2018-07-19 | 2022-07-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020017629A (ja) * | 2018-07-25 | 2020-01-30 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061440A (ja) * | 2018-10-09 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061459A (ja) * | 2018-10-10 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061461A (ja) * | 2018-10-10 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061499A (ja) * | 2018-10-11 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061495A (ja) * | 2018-10-11 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020061496A (ja) * | 2018-10-11 | 2020-04-16 | 株式会社ディスコ | ウェーハの加工方法 |
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JPH0697280A (ja) * | 1992-09-10 | 1994-04-08 | Hitachi Ltd | チップ形状半導体素子 |
JPH0927465A (ja) * | 1995-07-11 | 1997-01-28 | Nikon Corp | 半導体チップ製造方法 |
US6498074B2 (en) * | 1996-10-29 | 2002-12-24 | Tru-Si Technologies, Inc. | Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners |
US6995476B2 (en) | 1998-07-01 | 2006-02-07 | Seiko Epson Corporation | Semiconductor device, circuit board and electronic instrument that include an adhesive with conductive particles therein |
JP2000119552A (ja) | 1998-10-14 | 2000-04-25 | Nippon Paint Co Ltd | 光触媒酸化チタン含有水性無機塗料組成物 |
JP3447602B2 (ja) | 1999-02-05 | 2003-09-16 | シャープ株式会社 | 半導体装置の製造方法 |
JP2001023935A (ja) * | 1999-07-09 | 2001-01-26 | Sharp Corp | 半導体装置の製造方法 |
JP2001284293A (ja) * | 2000-03-31 | 2001-10-12 | Toyoda Gosei Co Ltd | 半導体ウエハーのチップ分割方法 |
JP2002093752A (ja) | 2000-09-14 | 2002-03-29 | Tokyo Electron Ltd | 半導体素子分離方法及び半導体素子分離装置 |
TW498443B (en) * | 2001-06-21 | 2002-08-11 | Advanced Semiconductor Eng | Singulation method for manufacturing multiple lead-free semiconductor packages |
JP4856328B2 (ja) * | 2001-07-13 | 2012-01-18 | ローム株式会社 | 半導体装置の製造方法 |
CN1241253C (zh) * | 2002-06-24 | 2006-02-08 | 丰田合成株式会社 | 半导体元件的制造方法 |
US6881600B2 (en) * | 2002-07-29 | 2005-04-19 | Digital Optics Corp | Etching in combination with other processing techniques to facilitate alignment of a die in a system and structures formed thereby |
JP4579489B2 (ja) * | 2002-09-02 | 2010-11-10 | 新光電気工業株式会社 | 半導体チップ製造方法及び半導体チップ |
JP4544876B2 (ja) * | 2003-02-25 | 2010-09-15 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2004259872A (ja) * | 2003-02-25 | 2004-09-16 | Canon Inc | 基板分割方法 |
JP2004297019A (ja) | 2003-03-28 | 2004-10-21 | Seiko Epson Corp | 半導体装置、回路基板及び電子機器 |
JP2004311576A (ja) * | 2003-04-03 | 2004-11-04 | Toshiba Corp | 半導体装置の製造方法 |
JP2005026314A (ja) * | 2003-06-30 | 2005-01-27 | Sanyo Electric Co Ltd | 固体撮像素子の製造方法 |
JP2005050997A (ja) * | 2003-07-28 | 2005-02-24 | Matsushita Electric Ind Co Ltd | 半導体素子分離方法 |
JP2005057052A (ja) * | 2003-08-04 | 2005-03-03 | Sharp Corp | 半導体基板の加工方法 |
JP3962713B2 (ja) * | 2003-09-30 | 2007-08-22 | キヤノン株式会社 | アライメントマークの形成方法、およびデバイスが構成される基板 |
JP2005322738A (ja) * | 2004-05-07 | 2005-11-17 | Toshiba Corp | 半導体装置の製造方法 |
JP4349278B2 (ja) * | 2004-12-24 | 2009-10-21 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
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2005
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2006
- 2006-06-02 KR KR1020060049831A patent/KR100786740B1/ko active IP Right Grant
- 2006-06-12 TW TW095120862A patent/TW200711066A/zh unknown
- 2006-06-14 US US11/453,311 patent/US7456108B2/en active Active
Also Published As
Publication number | Publication date |
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JP2007027675A (ja) | 2007-02-01 |
US20060284285A1 (en) | 2006-12-21 |
JP4544143B2 (ja) | 2010-09-15 |
KR20060132450A (ko) | 2006-12-21 |
KR100786740B1 (ko) | 2007-12-18 |
US7456108B2 (en) | 2008-11-25 |
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