TW200710980A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
TW200710980A
TW200710980A TW095107969A TW95107969A TW200710980A TW 200710980 A TW200710980 A TW 200710980A TW 095107969 A TW095107969 A TW 095107969A TW 95107969 A TW95107969 A TW 95107969A TW 200710980 A TW200710980 A TW 200710980A
Authority
TW
Taiwan
Prior art keywords
silicon wafer
protective film
interconnect layer
trenched
semiconductor device
Prior art date
Application number
TW095107969A
Other languages
English (en)
Inventor
Koji Soejima
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Publication of TW200710980A publication Critical patent/TW200710980A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
    • B43M—BUREAU ACCESSORIES NOT OTHERWISE PROVIDED FOR
    • B43M15/00—Drawing-pins, Thumb-tacks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S411/00—Expanded, threaded, driven, headed, tool-deformed, or locked-threaded fastener
    • Y10S411/921—Multiple-pronged nail, spike or tack
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S411/00—Expanded, threaded, driven, headed, tool-deformed, or locked-threaded fastener
    • Y10S411/923—Nail, spike or tack having specific head structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
TW095107969A 2005-03-10 2006-03-09 Method for manufacturing semiconductor device TW200710980A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005067626A JP2006253402A (ja) 2005-03-10 2005-03-10 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200710980A true TW200710980A (en) 2007-03-16

Family

ID=36971570

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107969A TW200710980A (en) 2005-03-10 2006-03-09 Method for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US20060205182A1 (zh)
JP (1) JP2006253402A (zh)
KR (1) KR100741864B1 (zh)
TW (1) TW200710980A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451491B (zh) * 2011-06-15 2014-09-01 Applied Materials Inc 使用水溶性晶片貼膜之雷射及電漿蝕刻晶圓切割
CN107026122A (zh) * 2015-09-18 2017-08-08 株式会社迪思科 晶片的加工方法
CN112366170A (zh) * 2020-11-25 2021-02-12 绍兴同芯成集成电路有限公司 一种晶圆切割工艺与玻璃载板

Families Citing this family (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008003577A (ja) * 2006-05-25 2008-01-10 Canon Inc 画像表示装置の製造方法および分断方法
JP4977432B2 (ja) * 2006-10-17 2012-07-18 株式会社ディスコ ヒ化ガリウムウエーハのレーザー加工方法
JP2008159985A (ja) * 2006-12-26 2008-07-10 Matsushita Electric Ind Co Ltd 半導体チップの製造方法
JP4840174B2 (ja) * 2007-02-08 2011-12-21 パナソニック株式会社 半導体チップの製造方法
US7838424B2 (en) * 2007-07-03 2010-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced reliability of wafer-level chip-scale packaging (WLCSP) die separation using dry etching
US8680653B2 (en) * 2007-11-12 2014-03-25 Infineon Technologies Ag Wafer and a method of dicing a wafer
JP2009182178A (ja) * 2008-01-31 2009-08-13 Disco Abrasive Syst Ltd デバイスの製造方法
JP5556657B2 (ja) * 2008-05-14 2014-07-23 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2010165963A (ja) * 2009-01-19 2010-07-29 Furukawa Electric Co Ltd:The 半導体ウェハの処理方法
JP5089643B2 (ja) * 2009-04-30 2012-12-05 インターナショナル・ビジネス・マシーンズ・コーポレーション 光接続要素の製造方法、光伝送基板、光接続部品、接続方法および光伝送システム
JP5335576B2 (ja) * 2009-06-26 2013-11-06 株式会社ディスコ 半導体ウエーハの加工方法
US9136144B2 (en) * 2009-11-13 2015-09-15 Stats Chippac, Ltd. Method of forming protective material between semiconductor die stacked on semiconductor wafer to reduce defects during singulation
US8951839B2 (en) * 2010-03-15 2015-02-10 Stats Chippac, Ltd. Semiconductor device and method of forming conductive vias through interconnect structures and encapsulant of WLCSP
WO2011156228A2 (en) 2010-06-08 2011-12-15 Henkel Corporation Coating adhesives onto dicing before grinding and micro-fabricated wafers
US8642448B2 (en) * 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
JP2014511559A (ja) 2011-02-01 2014-05-15 ヘンケル コーポレイション プレカットされウェハに塗布されるアンダーフィル膜
WO2012106223A2 (en) 2011-02-01 2012-08-09 Henkel Corporation Pre-cut wafer applied underfill film on dicing tape
US9029242B2 (en) 2011-06-15 2015-05-12 Applied Materials, Inc. Damage isolation by shaped beam delivery in laser scribing process
US8703581B2 (en) * 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
US9126285B2 (en) * 2011-06-15 2015-09-08 Applied Materials, Inc. Laser and plasma etch wafer dicing using physically-removable mask
US9129904B2 (en) * 2011-06-15 2015-09-08 Applied Materials, Inc. Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch
US8912077B2 (en) 2011-06-15 2014-12-16 Applied Materials, Inc. Hybrid laser and plasma etch wafer dicing using substrate carrier
US8759197B2 (en) 2011-06-15 2014-06-24 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US8557683B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US20120322235A1 (en) * 2011-06-15 2012-12-20 Wei-Sheng Lei Wafer dicing using hybrid galvanic laser scribing process with plasma etch
US8598016B2 (en) * 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
US8557682B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
US8951819B2 (en) * 2011-07-11 2015-02-10 Applied Materials, Inc. Wafer dicing using hybrid split-beam laser scribing process with plasma etch
TW201314757A (zh) * 2011-07-29 2013-04-01 Henkel Corp 於塗佈後研磨前之切塊
US8450188B1 (en) * 2011-08-02 2013-05-28 Micro Processing Technology, Inc. Method of removing back metal from an etched semiconductor scribe street
JP5926527B2 (ja) * 2011-10-17 2016-05-25 信越化学工業株式会社 透明ｓｏｉウェーハの製造方法
US8652940B2 (en) 2012-04-10 2014-02-18 Applied Materials, Inc. Wafer dicing used hybrid multi-step laser scribing process with plasma etch
US8946057B2 (en) 2012-04-24 2015-02-03 Applied Materials, Inc. Laser and plasma etch wafer dicing using UV-curable adhesive film
US8969177B2 (en) * 2012-06-29 2015-03-03 Applied Materials, Inc. Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film
US9048309B2 (en) 2012-07-10 2015-06-02 Applied Materials, Inc. Uniform masking for wafer dicing using laser and plasma etch
US8993414B2 (en) 2012-07-13 2015-03-31 Applied Materials, Inc. Laser scribing and plasma etch for high die break strength and clean sidewall
US8845854B2 (en) * 2012-07-13 2014-09-30 Applied Materials, Inc. Laser, plasma etch, and backside grind process for wafer dicing
US8940619B2 (en) * 2012-07-13 2015-01-27 Applied Materials, Inc. Method of diced wafer transportation
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9159574B2 (en) 2012-08-27 2015-10-13 Applied Materials, Inc. Method of silicon etch for trench sidewall smoothing
US8748307B2 (en) * 2012-08-31 2014-06-10 Infineon Technologies Ag Use of a protection layer to protect a passivation while etching a wafer
JP6059927B2 (ja) * 2012-09-18 2017-01-11 株式会社ディスコ ウエーハの加工方法
US9252057B2 (en) 2012-10-17 2016-02-02 Applied Materials, Inc. Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application
JP6166034B2 (ja) * 2012-11-22 2017-07-19 株式会社ディスコ ウエーハの加工方法
CN103028848B (zh) * 2012-12-06 2016-12-21 中国电子科技集团公司第四十一研究所 一种使用激光加工介质基片的方法
US8975162B2 (en) 2012-12-20 2015-03-10 Applied Materials, Inc. Wafer dicing from wafer backside
US9236305B2 (en) 2013-01-25 2016-01-12 Applied Materials, Inc. Wafer dicing with etch chamber shield ring for film frame wafer applications
US8980726B2 (en) 2013-01-25 2015-03-17 Applied Materials, Inc. Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers
US9620379B2 (en) 2013-03-14 2017-04-11 Applied Materials, Inc. Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch
US8883614B1 (en) 2013-05-22 2014-11-11 Applied Materials, Inc. Wafer dicing with wide kerf by laser scribing and plasma etching hybrid approach
DE102013108583A1 (de) * 2013-08-08 2015-03-05 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
WO2015023287A1 (en) * 2013-08-15 2015-02-19 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9105710B2 (en) 2013-08-30 2015-08-11 Applied Materials, Inc. Wafer dicing method for improving die packaging quality
US9224650B2 (en) * 2013-09-19 2015-12-29 Applied Materials, Inc. Wafer dicing from wafer backside and front side
US9460966B2 (en) 2013-10-10 2016-10-04 Applied Materials, Inc. Method and apparatus for dicing wafers having thick passivation polymer layer
US9041198B2 (en) * 2013-10-22 2015-05-26 Applied Materials, Inc. Maskless hybrid laser scribing and plasma etching wafer dicing process
US9312177B2 (en) 2013-12-06 2016-04-12 Applied Materials, Inc. Screen print mask for laser scribe and plasma etch wafer dicing process
US9299614B2 (en) 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
US9293304B2 (en) 2013-12-17 2016-03-22 Applied Materials, Inc. Plasma thermal shield for heat dissipation in plasma chamber
US9012305B1 (en) 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
US9299611B2 (en) 2014-01-29 2016-03-29 Applied Materials, Inc. Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance
US9018079B1 (en) * 2014-01-29 2015-04-28 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate reactive post mask-opening clean
US8927393B1 (en) 2014-01-29 2015-01-06 Applied Materials, Inc. Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing
US9236284B2 (en) 2014-01-31 2016-01-12 Applied Materials, Inc. Cooled tape frame lift and low contact shadow ring for plasma heat isolation
US8991329B1 (en) 2014-01-31 2015-03-31 Applied Materials, Inc. Wafer coating
US9130030B1 (en) 2014-03-07 2015-09-08 Applied Materials, Inc. Baking tool for improved wafer coating process
US20150255349A1 (en) 2014-03-07 2015-09-10 JAMES Matthew HOLDEN Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes
US9275902B2 (en) 2014-03-26 2016-03-01 Applied Materials, Inc. Dicing processes for thin wafers with bumps on wafer backside
US9076860B1 (en) 2014-04-04 2015-07-07 Applied Materials, Inc. Residue removal from singulated die sidewall
US8975163B1 (en) 2014-04-10 2015-03-10 Applied Materials, Inc. Laser-dominated laser scribing and plasma etch hybrid wafer dicing
US8932939B1 (en) 2014-04-14 2015-01-13 Applied Materials, Inc. Water soluble mask formation by dry film lamination
US8912078B1 (en) 2014-04-16 2014-12-16 Applied Materials, Inc. Dicing wafers having solder bumps on wafer backside
US8999816B1 (en) 2014-04-18 2015-04-07 Applied Materials, Inc. Pre-patterned dry laminate mask for wafer dicing processes
US8912075B1 (en) 2014-04-29 2014-12-16 Applied Materials, Inc. Wafer edge warp supression for thin wafer supported by tape frame
US9159621B1 (en) 2014-04-29 2015-10-13 Applied Materials, Inc. Dicing tape protection for wafer dicing using laser scribe process
US8980727B1 (en) 2014-05-07 2015-03-17 Applied Materials, Inc. Substrate patterning using hybrid laser scribing and plasma etching processing schemes
US9112050B1 (en) 2014-05-13 2015-08-18 Applied Materials, Inc. Dicing tape thermal management by wafer frame support ring cooling during plasma dicing
US9034771B1 (en) 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
US9093518B1 (en) 2014-06-30 2015-07-28 Applied Materials, Inc. Singulation of wafers having wafer-level underfill
US9142459B1 (en) 2014-06-30 2015-09-22 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination
US9165832B1 (en) 2014-06-30 2015-10-20 Applied Materials, Inc. Method of die singulation using laser ablation and induction of internal defects with a laser
US9130057B1 (en) 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser
US9349648B2 (en) 2014-07-22 2016-05-24 Applied Materials, Inc. Hybrid wafer dicing approach using a rectangular shaped two-dimensional top hat laser beam profile or a linear shaped one-dimensional top hat laser beam profile laser scribing process and plasma etch process
US9196498B1 (en) 2014-08-12 2015-11-24 Applied Materials, Inc. Stationary actively-cooled shadow ring for heat dissipation in plasma chamber
US9117868B1 (en) 2014-08-12 2015-08-25 Applied Materials, Inc. Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing
US9281244B1 (en) 2014-09-18 2016-03-08 Applied Materials, Inc. Hybrid wafer dicing approach using an adaptive optics-controlled laser scribing process and plasma etch process
US9177861B1 (en) 2014-09-19 2015-11-03 Applied Materials, Inc. Hybrid wafer dicing approach using laser scribing process based on an elliptical laser beam profile or a spatio-temporal controlled laser beam profile
US11195756B2 (en) 2014-09-19 2021-12-07 Applied Materials, Inc. Proximity contact cover ring for plasma dicing
US9196536B1 (en) 2014-09-25 2015-11-24 Applied Materials, Inc. Hybrid wafer dicing approach using a phase modulated laser beam profile laser scribing process and plasma etch process
US9130056B1 (en) 2014-10-03 2015-09-08 Applied Materials, Inc. Bi-layer wafer-level underfill mask for wafer dicing and approaches for performing wafer dicing
US9245803B1 (en) 2014-10-17 2016-01-26 Applied Materials, Inc. Hybrid wafer dicing approach using a bessel beam shaper laser scribing process and plasma etch process
US10692765B2 (en) 2014-11-07 2020-06-23 Applied Materials, Inc. Transfer arm for film frame substrate handling during plasma singulation of wafers
JP6395586B2 (ja) * 2014-12-15 2018-09-26 株式会社ディスコ 被加工物の分割方法
US9159624B1 (en) 2015-01-05 2015-10-13 Applied Materials, Inc. Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach
US9355907B1 (en) 2015-01-05 2016-05-31 Applied Materials, Inc. Hybrid wafer dicing approach using a line shaped laser beam profile laser scribing process and plasma etch process
US9330977B1 (en) 2015-01-05 2016-05-03 Applied Materials, Inc. Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process
WO2016114377A1 (ja) 2015-01-16 2016-07-21 雫石　誠 半導体素子とその製造方法
DE102015100686A1 (de) 2015-01-19 2016-07-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Halbleiterchips und Halbleiterchip
JP2016192476A (ja) * 2015-03-31 2016-11-10 株式会社沖データ 半導体チップ、半導体装置、プリントヘッド、画像形成装置、および半導体チップの製造方法
JP2016207737A (ja) * 2015-04-17 2016-12-08 株式会社ディスコ 分割方法
US9601375B2 (en) 2015-04-27 2017-03-21 Applied Materials, Inc. UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach
US9478455B1 (en) 2015-06-12 2016-10-25 Applied Materials, Inc. Thermal pyrolytic graphite shadow ring assembly for heat dissipation in plasma chamber
US9721839B2 (en) 2015-06-12 2017-08-01 Applied Materials, Inc. Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch
US10043676B2 (en) * 2015-10-15 2018-08-07 Vishay General Semiconductor Llc Local semiconductor wafer thinning
KR20170122185A (ko) * 2015-11-09 2017-11-03 후루카와 덴키 고교 가부시키가이샤 반도체 칩의 제조방법 및 이것에 이용하는 마스크 일체형 표면 보호 테이프
JP2017107921A (ja) * 2015-12-07 2017-06-15 株式会社ディスコ ウエーハの加工方法
US9779932B2 (en) * 2015-12-11 2017-10-03 Suss Microtec Photonic Systems Inc. Sacrificial layer for post-laser debris removal systems
US9972575B2 (en) 2016-03-03 2018-05-15 Applied Materials, Inc. Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
CN105655419B (zh) * 2016-03-22 2017-10-17 电子科技大学 一种制备黑硅材料的方法
US9852997B2 (en) 2016-03-25 2017-12-26 Applied Materials, Inc. Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process
JP2017199834A (ja) * 2016-04-28 2017-11-02 株式会社ジェイデバイス 半導体パッケージ及び半導体パッケージの製造方法
US9793132B1 (en) 2016-05-13 2017-10-17 Applied Materials, Inc. Etch mask for hybrid laser scribing and plasma etch wafer singulation process
JP6764322B2 (ja) * 2016-11-22 2020-09-30 株式会社ディスコ デバイスウェーハの加工方法
JP2018110156A (ja) * 2016-12-28 2018-07-12 キヤノン株式会社 半導体装置、その製造方法およびカメラ
US11158540B2 (en) 2017-05-26 2021-10-26 Applied Materials, Inc. Light-absorbing mask for hybrid laser scribing and plasma etch wafer singulation process
US10363629B2 (en) 2017-06-01 2019-07-30 Applied Materials, Inc. Mitigation of particle contamination for wafer dicing processes
JP7065311B2 (ja) * 2017-11-22 2022-05-12 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6965126B2 (ja) * 2017-11-28 2021-11-10 株式会社ディスコ 被加工物の加工方法
DE102017130929A1 (de) * 2017-12-21 2019-06-27 RF360 Europe GmbH Verfahren zum Produzieren einer funktionalen Dünnfilmschicht
CN108257864A (zh) * 2018-01-12 2018-07-06 上海华虹宏力半导体制造有限公司 晶圆处理方法
US10535561B2 (en) 2018-03-12 2020-01-14 Applied Materials, Inc. Hybrid wafer dicing approach using a multiple pass laser scribing process and plasma etch process
TWI825080B (zh) * 2018-03-30 2023-12-11 日商琳得科股份有限公司 半導體晶片的製造方法
US11355394B2 (en) 2018-09-13 2022-06-07 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate breakthrough treatment
JP7138001B2 (ja) * 2018-09-20 2022-09-15 株式会社ディスコ 加工条件選定方法
US10818551B2 (en) 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
WO2020209127A1 (ja) * 2019-04-12 2020-10-15 東京エレクトロン株式会社 基板処理方法及び基板処理システム
US11289378B2 (en) * 2019-06-13 2022-03-29 Wolfspeed, Inc. Methods for dicing semiconductor wafers and semiconductor devices made by the methods
US11011424B2 (en) 2019-08-06 2021-05-18 Applied Materials, Inc. Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process
US11342226B2 (en) 2019-08-13 2022-05-24 Applied Materials, Inc. Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process
US10903121B1 (en) 2019-08-14 2021-01-26 Applied Materials, Inc. Hybrid wafer dicing approach using a uniform rotating beam laser scribing process and plasma etch process
US11600492B2 (en) 2019-12-10 2023-03-07 Applied Materials, Inc. Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process
US11211247B2 (en) 2020-01-30 2021-12-28 Applied Materials, Inc. Water soluble organic-inorganic hybrid mask formulations and their applications

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966278A (zh) * 1972-10-31 1974-06-27
JPH01183133A (ja) * 1988-01-16 1989-07-20 Sumitomo Electric Ind Ltd 切断方法
JPH07283172A (ja) * 1994-04-07 1995-10-27 Casio Comput Co Ltd 半導体装置の製造方法
JPH09216085A (ja) * 1996-02-07 1997-08-19 Canon Inc 基板の切断方法及び切断装置
JP2001135597A (ja) * 1999-08-26 2001-05-18 Fujitsu Ltd 半導体装置の製造方法
JP2001110811A (ja) * 1999-10-08 2001-04-20 Oki Electric Ind Co Ltd 半導体装置の製造方法
US6759275B1 (en) * 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
JP3910843B2 (ja) * 2001-12-13 2007-04-25 東京エレクトロン株式会社 半導体素子分離方法及び半導体素子分離装置
DE10391811B4 (de) * 2002-02-25 2012-06-21 Disco Corp. Verfahren zum Zerlegen eines Halbleiterwafers
KR100451950B1 (ko) * 2002-02-25 2004-10-08 삼성전자주식회사 이미지 센서 소자 웨이퍼 소잉 방법
JP2004031526A (ja) * 2002-06-24 2004-01-29 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体素子の製造方法
US6582983B1 (en) * 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP2004055816A (ja) * 2002-07-19 2004-02-19 Sanyo Electric Co Ltd 窒化物化合物半導体発光素子及びその製造方法
JP3908148B2 (ja) * 2002-10-28 2007-04-25 シャープ株式会社 積層型半導体装置
JP2004179565A (ja) * 2002-11-29 2004-06-24 Sony Corp 電子部品の製造方法及びダイシング方法、並びにこれらを実施するための製造装置
JP2004188475A (ja) * 2002-12-13 2004-07-08 Disco Abrasive Syst Ltd レーザー加工方法
JP3825753B2 (ja) * 2003-01-14 2006-09-27 株式会社東芝 半導体装置の製造方法
JP2004311576A (ja) * 2003-04-03 2004-11-04 Toshiba Corp 半導体装置の製造方法
US7199050B2 (en) * 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451491B (zh) * 2011-06-15 2014-09-01 Applied Materials Inc 使用水溶性晶片貼膜之雷射及電漿蝕刻晶圓切割
CN107026122A (zh) * 2015-09-18 2017-08-08 株式会社迪思科 晶片的加工方法
CN112366170A (zh) * 2020-11-25 2021-02-12 绍兴同芯成集成电路有限公司 一种晶圆切割工艺与玻璃载板

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US20060205182A1 (en) 2006-09-14

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