TW200705715A - Allngap LED having reduced temperature dependence - Google Patents

Allngap LED having reduced temperature dependence

Info

Publication number
TW200705715A
TW200705715A TW095112045A TW95112045A TW200705715A TW 200705715 A TW200705715 A TW 200705715A TW 095112045 A TW095112045 A TW 095112045A TW 95112045 A TW95112045 A TW 95112045A TW 200705715 A TW200705715 A TW 200705715A
Authority
TW
Taiwan
Prior art keywords
layer
alingap
lattice constant
ingaas
ingap
Prior art date
Application number
TW095112045A
Other languages
English (en)
Other versions
TWI399865B (zh
Inventor
Michael R Krames
Nathan F Gardner
Frank M Steranka
Original Assignee
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Lumileds Lighting Co filed Critical Philips Lumileds Lighting Co
Publication of TW200705715A publication Critical patent/TW200705715A/zh
Application granted granted Critical
Publication of TWI399865B publication Critical patent/TWI399865B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
TW095112045A 2005-04-05 2006-04-04 具有降低溫度相依性之鋁銦鎵磷發光二極體 TWI399865B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/100,080 US7244630B2 (en) 2005-04-05 2005-04-05 A1InGaP LED having reduced temperature dependence

Publications (2)

Publication Number Publication Date
TW200705715A true TW200705715A (en) 2007-02-01
TWI399865B TWI399865B (zh) 2013-06-21

Family

ID=36658681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112045A TWI399865B (zh) 2005-04-05 2006-04-04 具有降低溫度相依性之鋁銦鎵磷發光二極體

Country Status (6)

Country Link
US (3) US7244630B2 (zh)
EP (1) EP1869716A1 (zh)
JP (1) JP5373253B2 (zh)
CN (1) CN101180741B (zh)
TW (1) TWI399865B (zh)
WO (1) WO2006106467A1 (zh)

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CN104576628B (zh) * 2013-10-25 2018-04-06 广东德力光电有限公司 一种新型白光led结构及其制作方法
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TWI698057B (zh) * 2018-02-13 2020-07-01 國立交通大學 具有透明導電層之二維光子晶體面射型雷射
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CN110600417B (zh) * 2019-08-02 2022-11-18 中国科学院微电子研究所 一种GaAs衬底上的外延转移方法及制得的半导体器件
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
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Also Published As

Publication number Publication date
CN101180741B (zh) 2010-05-19
US7544525B2 (en) 2009-06-09
US20060220031A1 (en) 2006-10-05
CN101180741A (zh) 2008-05-14
TWI399865B (zh) 2013-06-21
EP1869716A1 (en) 2007-12-26
JP5373253B2 (ja) 2013-12-18
US20070131961A1 (en) 2007-06-14
US7244630B2 (en) 2007-07-17
WO2006106467A1 (en) 2006-10-12
US7863631B2 (en) 2011-01-04
US20090230381A1 (en) 2009-09-17
JP2006352089A (ja) 2006-12-28

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