JP2008159629A - 光通信用半導体素子 - Google Patents
光通信用半導体素子 Download PDFInfo
- Publication number
- JP2008159629A JP2008159629A JP2006343446A JP2006343446A JP2008159629A JP 2008159629 A JP2008159629 A JP 2008159629A JP 2006343446 A JP2006343446 A JP 2006343446A JP 2006343446 A JP2006343446 A JP 2006343446A JP 2008159629 A JP2008159629 A JP 2008159629A
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- Prior art keywords
- light
- layer
- emitting layer
- light emitting
- semiconductor element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Abstract
【解決手段】光通信用半導体素子1は、基板2上に積層された反射層3と、n型クラッド層4と、第1発光層5と、第2発光層6と、p型クラッド層7と、p型ウインドウ層8とを備えている。第1発光層5は、約920nm〜約970nmの波長に発光ピークを有するセンサ用の光を発光するためのものである。第1発光層5は、約10nmの厚みを有するIn0.2Ga0.8As層からなる。第2発光層6は、約820nm〜約870nmの波長に発光ピークを有するIrDA光通信用の光を発光するためのものである。第1発光層5は、約500nmの厚みを有するGaAs層からなる。
【選択図】図1
Description
2 基板
3 反射層
4 n型クラッド層
5、5A、5B、5C 第1発光層
6、6A、6B、6C 第2発光層
7 p型クラッド層
8 p型ウインドウ層
9 p側電極
10 n側電極
Claims (2)
- 複数の異なる波長の光を使用し、前記光のうち少なくとも1つは光通信に使用される光通信用半導体素子において、
半導体からなる第1発光層と、
前記第1発光層とは波長の異なる発光ピークを有する光を発光可能な半導体からなる第2発光層とを備えたことを特徴とする光通信用半導体素子。 - 前記第1発光層及び前記第2発光層から発光された光を反射可能な反射層を備えたことを特徴とする請求項1に記載の光通信用半導体素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006343446A JP2008159629A (ja) | 2006-12-20 | 2006-12-20 | 光通信用半導体素子 |
US11/987,021 US20080149950A1 (en) | 2006-12-20 | 2007-11-26 | Optical communication semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006343446A JP2008159629A (ja) | 2006-12-20 | 2006-12-20 | 光通信用半導体素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008159629A true JP2008159629A (ja) | 2008-07-10 |
Family
ID=39541552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006343446A Pending JP2008159629A (ja) | 2006-12-20 | 2006-12-20 | 光通信用半導体素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20080149950A1 (ja) |
JP (1) | JP2008159629A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010067890A (ja) * | 2008-09-12 | 2010-03-25 | Hitachi Cable Ltd | 発光素子 |
US9991417B2 (en) * | 2015-07-31 | 2018-06-05 | International Business Machines Corporation | Resonant cavity strained III-V photodetector and LED on silicon substrate |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04340290A (ja) * | 1991-05-16 | 1992-11-26 | Canon Inc | 半導体レーザの発振波長制御駆動方法 |
JPH09232627A (ja) * | 1996-02-26 | 1997-09-05 | Matsushita Electric Ind Co Ltd | 白色発光素子 |
JPH1022525A (ja) * | 1996-06-28 | 1998-01-23 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
JPH11274558A (ja) * | 1998-03-23 | 1999-10-08 | Toshiba Corp | 半導体発光素子および半導体発光装置 |
JP2001036141A (ja) * | 1999-07-23 | 2001-02-09 | Toshiba Corp | 双方向半導体発光素子及び光伝送装置 |
JP2002252371A (ja) * | 2001-02-23 | 2002-09-06 | Toshiba Corp | 半導体発光装置 |
JP2005340836A (ja) * | 2004-05-28 | 2005-12-08 | Osram Opto Semiconductors Gmbh | オプトエレクトロニクス構成素子及びその製造方法 |
JP2006303259A (ja) * | 2005-04-22 | 2006-11-02 | Ishikawajima Harima Heavy Ind Co Ltd | 窒化物半導体発光素子と窒化物半導体の成長方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6639249B2 (en) * | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
TW556446B (en) * | 2002-09-11 | 2003-10-01 | Opto Tech Corp | Organic light-emitting device and the manufacturing method thereof |
US20070170444A1 (en) * | 2004-07-07 | 2007-07-26 | Cao Group, Inc. | Integrated LED Chip to Emit Multiple Colors and Method of Manufacturing the Same |
TWI267212B (en) * | 2004-12-30 | 2006-11-21 | Ind Tech Res Inst | Quantum dots/quantum well light emitting diode |
US8134175B2 (en) * | 2005-01-11 | 2012-03-13 | Massachusetts Institute Of Technology | Nanocrystals including III-V semiconductors |
US7244630B2 (en) * | 2005-04-05 | 2007-07-17 | Philips Lumileds Lighting Company, Llc | A1InGaP LED having reduced temperature dependence |
US20090001389A1 (en) * | 2007-06-28 | 2009-01-01 | Motorola, Inc. | Hybrid vertical cavity of multiple wavelength leds |
-
2006
- 2006-12-20 JP JP2006343446A patent/JP2008159629A/ja active Pending
-
2007
- 2007-11-26 US US11/987,021 patent/US20080149950A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04340290A (ja) * | 1991-05-16 | 1992-11-26 | Canon Inc | 半導体レーザの発振波長制御駆動方法 |
JPH09232627A (ja) * | 1996-02-26 | 1997-09-05 | Matsushita Electric Ind Co Ltd | 白色発光素子 |
JPH1022525A (ja) * | 1996-06-28 | 1998-01-23 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
JPH11274558A (ja) * | 1998-03-23 | 1999-10-08 | Toshiba Corp | 半導体発光素子および半導体発光装置 |
JP2001036141A (ja) * | 1999-07-23 | 2001-02-09 | Toshiba Corp | 双方向半導体発光素子及び光伝送装置 |
JP2002252371A (ja) * | 2001-02-23 | 2002-09-06 | Toshiba Corp | 半導体発光装置 |
JP2005340836A (ja) * | 2004-05-28 | 2005-12-08 | Osram Opto Semiconductors Gmbh | オプトエレクトロニクス構成素子及びその製造方法 |
JP2006303259A (ja) * | 2005-04-22 | 2006-11-02 | Ishikawajima Harima Heavy Ind Co Ltd | 窒化物半導体発光素子と窒化物半導体の成長方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080149950A1 (en) | 2008-06-26 |
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