TWI698057B - 具有透明導電層之二維光子晶體面射型雷射 - Google Patents

具有透明導電層之二維光子晶體面射型雷射 Download PDF

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TWI698057B
TWI698057B TW107105249A TW107105249A TWI698057B TW I698057 B TWI698057 B TW I698057B TW 107105249 A TW107105249 A TW 107105249A TW 107105249 A TW107105249 A TW 107105249A TW I698057 B TWI698057 B TW I698057B
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photonic crystal
transparent conductive
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盧廷昌
洪國彬
黃聖哲
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國立交通大學
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Abstract

一種具有創新透明導電薄膜披覆層設計之二維光子晶體雷射。藉由蝕刻製程定義出二維週期性光子晶體區域，其由複數個週期性孔洞排列所組成，且各週期性孔洞具有設計適當之週期性孔洞佔空比，接續鍍上透明導電薄膜並覆蓋整個光子晶體區以形成電流擴散層。透過優化透明導電層的設置與製程條件，可提供透光性與電流均勻散佈之途徑，除得以簡化整體製程流程與降低製程難度，也能有效提升光學侷限特性進而獲最大增益於光程反饋並實現下世代光源低閾值、小發散角與高品質之雷射輸出。

Description

具有透明導電層之二維光子晶體面射型雷射
本發明關於一種面射型雷射，特別是，一種具有透明導電層之二維光子晶體面射型雷射。
隨著科技進步，雷射越來越普遍，並適用於醫療、光學通訊以及工業加工，但是雷射卻有一個缺點，其為體積過於龐大，因此在放置雷射上往往需考量空間的大小是否適合置放。近來，廠商已開發出半導體雷射來改善雷射過於龐大的問題，常見的半導體雷射所使用的共振腔為法布立─伯羅共振腔(Fabry-Perot resonator)，但使用此種的共振腔會產生模態競爭，進而造成不純的雷射光，如何解前述的癥結點，遂成為待解決的問題。
綜觀前所述，本發明之發明者思索並設計一種具有透明導電層之二維光子晶體面射型雷射，以期針對習知技術之缺失加以改善，進而增進產業上之實施利用。
有鑑於上述習知之問題，本發明的目的在於提供一種具有透明導電層之二維光子晶體面射型雷射，用以解決習知技術中所面臨之問題。
基於上述目的，本發明提供一種具有透明導電層之二維光子晶體面射型雷射，其包括基板、n型漸變折射層、n型披覆層、n型光侷限層、發光層、p型光侷限層、光子晶體區、兩個電流侷限帶以及透明導電層，基板至透明導電層為依序從基板堆疊設置到透明導電層。光子晶體區包括p型注入層以及間隔設置於p型注入層的複數個週期性孔洞，各週期性孔洞之間具有週期性孔洞佔空比；兩個電流侷限帶環繞光子晶體區，而未覆蓋整個光子晶體區，透明導電層則覆蓋整個光子晶體區並位於兩個電流侷限帶上。透過透明導電層的設置讓電流均勻地擴散，且備有兩個電流侷限帶侷限電流擴散的區域，進而侷限本發明的發光區域，讓發光層產生的光於光子晶體區共振而產生雷射光。
較佳地，光子晶體區為二維週期性結構。
較佳地，該p型注入層包括p型披覆層、p型漸變折射層以及重摻雜p型覆蓋層，p型披覆層設置於p型光侷限層上，p型漸變折射層設置於p型披覆層上，重摻雜p型覆蓋層設置於p型漸變折射層上。
較佳地，各週期性孔洞的寬度以及各週期性孔洞佔空比的週期為介於100奈米至1000奈米。
較佳地，各週期性孔洞的截面形狀為圓形、四角形或六角形。
較佳地，發光層為多重量子井結構。
較佳地，更包括兩個p型金屬電極和背電極，兩個p型金屬電極分別設置於光子晶體區的兩側，並位於透明導電層上，而背電極設置於基板下。
較佳地，兩個電流侷限帶之間的距離為1微米至1000微米。
較佳地，兩個電流侷限帶的材料為絕緣材料。
較佳地，透明導電層的材料包括氧化銦錫(ITO)、氧化鋅(ZnO)、氧化鋁鎵銦錫(AlGaInSnO)、氧化鋁鋅(AZO)、氧化錫(SnO2 )、氧化銦(In2 O3 )、氧化鋅錫(SnZnO)或石墨烯(Graphene)。
承上所述，本發明之具有透明導電層之二維光子晶體面射型雷射，其可具有一個或多個下述優點：
(1)本發明之具有透明導電層之二維光子晶體面射型雷射，透過兩個電流拘限帶和透明導電層的設置，讓電流均勻地擴散並侷限本發明的發光區域，進而讓發光層產生的光於光子晶體區共振而產生雷射光。
(2)本發明之具有透明導電層之二維光子晶體面射型雷射，利用二維週期性結構的光子晶體區當作共振腔，不會有模態競爭的現象。
本發明之優點、特徵以及達到之技術方法將參照例示性實施例及所附圖式進行更詳細地描述而更容易理解，且本發明可以不同形式來實現，故不應被理解僅限於此處所陳述的實施例，相反地，對所屬技術領域具有通常知識者而言，所提供的實施例將使本揭露更加透徹與全面且完整地傳達本發明的範疇，且本發明將僅為所附加的申請專利範圍所定義。
如第1圖、第2圖所示，其為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之結構圖和本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之立體結構圖。於本實施例中，本發明之具有透明導電層之二維光子晶體面射型雷射，其包括基板10、n型漸變折射層20、n型披覆層30、n型光侷限層40、發光層50、p型光侷限層60、光子晶體區70、兩個電流侷限帶80以及透明導電層90，基板10至透明導電層90為依序從基板10堆疊設置到透明導電層90。其中，發光層50為多重量子井結構；光子晶體區70為二維週期性結構且包括p型注入層71以及間隔設置於p型注入層71的複數個週期性孔洞72，各週期性孔洞72之間具有週期性孔洞佔空比73，p型注入層71包括p型披覆層711、p型漸變折射層712以及重摻雜p型覆蓋層713，p型披覆層711設置於p型光侷限層60上，p型漸變折射層712設置於p型披覆層711上，重摻雜p型覆蓋層713設置於p型漸變折射層712上；兩個電流侷限帶80環繞光子晶體區70而未覆蓋整個光子晶體區70，且兩個電流侷限帶80之間的距離為1微米至1000微米，從而讓發光層50的光不會被阻擋；透明導電層90則覆蓋整個光子晶體區70並位於兩個電流侷限帶80上。透過透明導電層90的設置讓電流均勻地擴散，且備有兩個電流侷限帶80侷限電流擴散的區域，進而侷限本發明的發光區域，讓發光層50產生的光於光子晶體區70共振而產生雷射光，再者，由於透明導電層90的設置，本發明所發出的雷射光能順利發散出去。
續言之，n型漸變折射層20降低基板10和n型披覆層30之間的異質結構電阻，p型漸變折射層712降低重摻雜p型覆蓋層713和p型披覆層711之間的異質結構電阻，而n型光侷限層40和p型光侷限層60的設置，侷限電子電洞在發光層50複合，提升電子電洞注入效率以及複合效率。再者，更包括兩個p型金屬電極100和背電極110，兩個p型金屬電極100分別設置於光子晶體區70的兩側，並位於透明導電層90上以作為正極，而背電極110設置於基板10下以作為負極，以利於施加電流於本發明，而兩個p型金屬電極100和背電極110之材料包括銦(In)、錫(Sn)、鋁(Al)、金(Au)、鉑(Pt)、鋅(Zn)、鍺(Ge)、銀(Ag)、鉛(Pb)、鈀(Pd)、銅(Cu)、鈹化金(AuBe)、鈹化鍺(BeGe)、鎳(Ni)、錫化鉛(PbSn)、鉻(Cr)、鋅化金(AuZn)、鈦(Ti)、鎢(W)以及鎢化鈦(TiW)等所組成材料中至少一種。
其中，透明導電層90的材料包括氧化銦錫(ITO)、氧化鋅(ZnO)、氧化鋁鎵銦錫(AlGaInSnO)、氧化鋁鋅(AZO)、氧化錫(SnO2 )、氧化銦(In2 O3 )、氧化鋅錫(SnZnO)或石墨烯(Graphene)，其皆在可見光波段以及紅外光波段具有良好的穿透率，以利於雷射光發出，此外，透明導電層90的較佳厚度為250奈米至400奈米的範圍；兩個電流侷限帶80的材料包括氧化鋁(Al2 O3 )、二氧化矽(SiO2 )、矽之氮化物(SiNx )、二氧化鈦(TiO2 )、五氧化二鉭(Ta2 O5 )以及二氧化鉿(HfO2 )所組成之單層或多層，前述材料皆為絕緣材料，以利於侷限電流在光子晶體區70之下而未流至其他地方。
另外，基板10可選自於矽基板、砷化鎵(GaAs)基板、玻璃基板、石英基板、磷化鎵(GaP)基板、磷砷化鎵(GaAsP)基板、砷化鋁鎵(AlGaAs)基板、氧化鋅(ZnO)基板、藍寶石基板、磷化銦(InP)基板以及碳化矽(SiC)基板之其中一種；n型披覆層30、n型光侷限層40、發光層50、p型光侷限層60以及p型披覆層711可包括砷化鎵(GaAs)、砷化銦鎵 (InGaAs)、磷砷化銦鎵(InGaAsP)、砷化鋁(AlAs)、砷化鋁鎵銦 (AlGaInAs)、磷化鋁鎵銦 (AlGaInP)、砷化鋁鎵(AlGaAs)、砷氮化銦鎵(InGaNAs)、銻砷化鎵(GaAsSb)、銻化鎵(GaSb)、磷化銦(InP)、砷化銦(InAs)、磷化鎵(GaP)、磷化鋁(AlP)、氮化鎵(GaN)、氮化鋁鎵(AlGaN)、氮化銦鎵(InGaN)以及氮化鋁銦鎵(AlInGaN)之所組成材料群組中至少一種，n型披覆層30、n型光侷限層40、發光層50、p型光侷限層60以及p型披覆層711之材料和基板10的材料搭配設計，以提升晶格匹配率，進而降低晶格錯位的發生。
如第3圖所示，其為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之週期性孔洞圖。如第3圖所示，各週期性孔洞72的形狀相當完整，此為透過感應耦合電漿離子蝕刻技術(Inductively Coupled Plasma Reactive Ion Etching)和電子束光刻技術達成。詳言之，先利用電子束光刻定義出需蝕刻的各週期性孔洞72的形狀，形狀可根據設計所需為不同形狀，並非限定為圓形，接著利用感應耦合電漿離子蝕刻技術將各週期性孔洞72的深度挖深，且蝕刻後的週期性孔洞72相當乾淨，並未留下任何蝕刻殘留物，而相當適合作為光子晶體區70的部分。
如第4圖所示，其為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之流程圖。於此，搭配第4圖說明本發明的製作流程如下：(1)S11流程：先從基板10依序沉積n型漸變折射層20、n型披覆層30、n型光侷限層40、發光層50、p型光侷限層60、p型披覆層711、p型漸變折射層712以及重摻雜p型覆蓋層713，p型披覆層711、p型漸變折射層712以及重摻雜p型覆蓋層713形成為p型注入層71。(2)S12流程：接著透過感應耦合電漿離子蝕刻技術和遮罩的搭配，在p型披覆層711、p型漸變折射層712以及重摻雜p型覆蓋層713蝕刻出具有複數個週期性孔洞72和複數個週期性孔洞佔空比73之光子晶體區70，光子晶體區70為二維光子晶體結構並作為本發明之共振腔，而不會有模態競爭的問題；其中，各週期性孔洞72的寬度以及各週期性孔洞佔空比73的週期為介於100奈米至1000奈米，各週期性孔洞72的截面形狀為圓形、四角形或六角形，各週期性孔洞72的深度為100奈米至200奈米的範圍，當然可根據雷射波長和共振腔的設計所需，加以調整各週期性孔洞佔空比73的寬度和週期以及各週期性孔洞72的深度和形狀，僅要其在本發明所述的範圍即可。(3)S13流程：接著透過濕式蝕刻將光子晶體區70變為平台結構，讓光子晶體區70的兩側清空。(4)S14流程：於光子晶體區70的周圍分別沉積兩個電流侷限帶80，讓兩個電流侷限帶80環繞整個光子晶體區70。(5)S15流程：接續沉積透明導電層90於兩個沉積電流侷限帶80上，並覆蓋整個光子晶體區70，藉此讓電流均勻擴散及降低電流擁擠效應的發生，並透過兩個電流侷限帶80的設置，讓電流侷限於光子晶體區70之下，進而讓發光層50發出的光於光子晶體區70共振。(6)S16流程：最後，於基板10下沉積背電極110，以及於光子晶體區70的兩側分別沉積p型金屬電極100，兩個p型金屬電極100皆位於透明導電層90上，以利於施加電流於本發明。
如第5圖、第6圖以及第7圖所示，其分別為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之電流對電壓圖、本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之電流對光強度圖以及本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之波長、溫度和強度之曲線圖。於此，利用前述材料中能隙位於近紅外光波段的材料組成本發明，並搭配第5圖、第6圖以及第7圖說明本發明之電性和光學特性。
先就電性方面來說，參閱第5圖和第6圖，顯示臨界電壓為1.25V以及臨界電流為介於0.1A和0.2A之間，電阻約為6.4歐姆，不需要極高的電流或電壓就可讓本發明發出雷射光，且由第5圖得知，電壓和電流的曲線大致上為斜直線而判定其為歐姆接觸，從而得知本發明之層間的接面特性相當良好以及具有雙向導通的特性，且層間的能階差距不大，利於電子和電洞順利注入發光層50，進而提升量子效率，以發出較純的雷射光。
再就光性方面來說，參閱第7圖，得知本發明發出的主波長位置於不同溫度時仍偏移不大，偏移量大約0.01nm/K，遠比利用習知的法布立─伯羅共振腔的雷射偏移量小，並顯示本發明於常溫時仍能正常發出雷射光，由於透明導電層90降低電流擁擠效應，進而降低熱的產生，而不需操作於低溫環境來舒緩熱的產生，且本發明於溫度343K時仍能正常運作，另外，本發明於不同溫度時發出的雷射光之半高寬相當窄，且並未有其他缺陷波長的光譜，得知層間的接觸相當良好，而未有晶格缺陷或晶格錯位的情形發生，且本發明發出的雷射光的發散角小於1度，此為相當集中的雷射光，而在聚焦方面來說，相當容易聚焦而不會分散。
綜上所述，本發明之二維光子晶體面射型雷射，利用透明導電層90降低電流擁擠效應的產生，讓電流均勻擴散至各層，並藉由兩個電流侷限帶80侷限電流擴散至光子晶體區70內以下的區域，進而讓發光層50發出的光在光子晶體區70共振而發出雷射光，在電性方面，本發明的層接面為歐姆接觸，在光性方面，本發明仍能於常溫時發出雷射光，得知本發明之光電特性的表現都相當優異，相當適合作為光源使用。總而言之，本發明之二維光子晶體面射型雷射具有如上述的優點，透過透明導電層90和兩個電流侷限帶80的設置，讓本發明仍能在常溫下運作而發出雷射光。
以上所述僅為舉例性，而非為限制性者。任何未脫離本發明之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。
10‧‧‧基板20‧‧‧n型漸變折射層30‧‧‧n型披覆層40‧‧‧n型光侷限層50‧‧‧發光層60‧‧‧p型光侷限層70‧‧‧光子晶體區71‧‧‧p型注入層72‧‧‧週期性孔洞73‧‧‧週期性孔洞佔空比80‧‧‧電流侷限帶90‧‧‧透明導電層100‧‧‧p型金屬電極110‧‧‧背電極711‧‧‧p型披覆層712‧‧‧p型漸變折射層713‧‧‧重摻雜p型覆蓋層S11、S12、S13、S14、S15、S16‧‧‧流程
第1圖為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之平面結構圖。
第2圖為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之立體結構圖。
第3圖為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之週期性孔洞圖。
第4圖為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之流程圖。
第5圖為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之電流對電壓圖。
第6圖為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之電流對光強度圖。
第7圖為本發明之具有透明導電層之二維光子晶體面射型雷射之第一實施例之波長、溫度和強度之曲線圖。
10‧‧‧基板
20‧‧‧n型漸變折射層
30‧‧‧n型披覆層
40‧‧‧n型光侷限層
50‧‧‧發光層
60‧‧‧p型光侷限層
70‧‧‧光子晶體區
71‧‧‧p型注入層
72‧‧‧週期性孔洞
73‧‧‧週期性孔洞佔空比
80‧‧‧電流侷限帶
90‧‧‧透明導電層
100‧‧‧p型金屬電極
110‧‧‧背電極
711‧‧‧p型披覆層
712‧‧‧p型漸變折射層
713‧‧‧重摻雜p型覆蓋層

Claims (10)

  1. 一種具有透明導電層之二維光子晶體面射型雷射，其包括： 一基板； 一n型漸變折射層，設置於該基板上； 一n型披覆層，設置於該n型漸變折射層上； 一n型光侷限層，設置於該n型披覆層上； 一發光層，設置於該n型光侷限層上； 一p型光侷限層，設置於該發光層上； 一光子晶體區，設置於該p型光侷限層上，並包括一p型注入層以及間隔設置於該p型注入層的複數個週期性孔洞，各該週期性孔洞之間具有一週期性孔洞佔空比； 二電流侷限帶，環繞於該光子晶體區；以及 一透明導電層，設置於該二電流侷限帶上，並覆蓋該光子晶體區。
  2. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，該光子晶體區為二維週期性結構。
  3. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，該p型注入層包括一p型披覆層、一p型漸變折射層以及一重摻雜p型覆蓋層，該p型披覆層設置於該p型光侷限層上，該p型漸變折射層設置於該p型披覆層上，該重摻雜p型覆蓋層設置於該p型漸變折射層上。
  4. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，各該週期性孔洞的寬度以及各該週期性孔洞佔空比的週期為介於100奈米至1000奈米。
  5. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，各該週期性孔洞的截面形狀為圓形、四角形或六角形。
  6. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，該發光層為多重量子井結構。
  7. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，更包括二p型金屬電極和一背電極，該二p型金屬電極分別設置於該光子晶體區的兩側，並位於該透明導電層上，而該背電極設置於該基板下。
  8. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，該二電流侷限帶之間的距離為1微米至1000微米。
  9. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，該二電流侷限帶的材料為絕緣材料。
  10. 如申請專利範圍第1項所述之具有透明導電層之二維光子晶體面射型雷射，其中，該透明導電層的材料包括氧化銦錫(ITO)、氧化鋅(ZnO)、氧化鋁鎵銦錫(AlGaInSnO)、氧化鋁鋅(AZO)、氧化錫(SnO2 )、氧化銦(In2 O3 )、氧化鋅錫(SnZnO)或石墨烯(Graphene)。
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