TW200623301A - Method for manufacturing semiconductor integrated circuit device - Google Patents

Method for manufacturing semiconductor integrated circuit device

Info

Publication number
TW200623301A
TW200623301A TW094133557A TW94133557A TW200623301A TW 200623301 A TW200623301 A TW 200623301A TW 094133557 A TW094133557 A TW 094133557A TW 94133557 A TW94133557 A TW 94133557A TW 200623301 A TW200623301 A TW 200623301A
Authority
TW
Taiwan
Prior art keywords
thin film
film sheet
height
integrated circuit
semiconductor integrated
Prior art date
Application number
TW094133557A
Other languages
English (en)
Other versions
TWI385741B (zh
Inventor
Hideyuki Matsumoto
Shingo Yorisaki
Akio Hasebe
Yasuhiro Motoyama
Masayoshi Okamoto
Yasunori Narizuka
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200623301A publication Critical patent/TW200623301A/zh
Application granted granted Critical
Publication of TWI385741B publication Critical patent/TWI385741B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/0735—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
TW094133557A 2004-11-18 2005-09-27 Manufacturing method of semiconductor integrated circuit device TWI385741B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2004/017160 WO2006054344A1 (ja) 2004-11-18 2004-11-18 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
TW200623301A true TW200623301A (en) 2006-07-01
TWI385741B TWI385741B (zh) 2013-02-11

Family

ID=36406892

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094133557A TWI385741B (zh) 2004-11-18 2005-09-27 Manufacturing method of semiconductor integrated circuit device

Country Status (5)

Country Link
US (1) US7598100B2 (zh)
JP (1) JP4755597B2 (zh)
CN (1) CN100508154C (zh)
TW (1) TWI385741B (zh)
WO (1) WO2006054344A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7863188B2 (en) 2005-07-29 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4800007B2 (ja) 2005-11-11 2011-10-26 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法およびプローブカード
CN100559173C (zh) * 2005-12-27 2009-11-11 中芯国际集成电路制造(上海)有限公司 集成电路制造中用于俄歇电子能谱的样品的处理方法
KR101437092B1 (ko) * 2013-09-30 2014-09-03 주식회사 엔티에스 반도체 칩 검사장치
CN108574158B (zh) * 2017-03-14 2020-10-09 群创光电股份有限公司 显示装置及其制造方法
IT201800005444A1 (it) * 2018-05-16 2019-11-16 Scheda di misura avente elevate prestazioni in alta frequenza

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* Cited by examiner, † Cited by third party
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US5180977A (en) * 1991-12-02 1993-01-19 Hoya Corporation Usa Membrane probe contact bump compliancy system
JPH05283490A (ja) 1992-04-02 1993-10-29 Fuji Electric Co Ltd 集積回路装置の試験方法
JP2828410B2 (ja) 1993-12-21 1998-11-25 松下電器産業株式会社 プローブカード及び半導体チップの検査方法
JP3658029B2 (ja) 1994-02-21 2005-06-08 株式会社ルネサステクノロジ 接続装置およびその製造方法
JP3502874B2 (ja) 1994-06-03 2004-03-02 株式会社ルネサステクノロジ 接続装置およびその製造方法
JP3394620B2 (ja) 1995-01-20 2003-04-07 株式会社日立製作所 探針組立体および検査装置
JP2689938B2 (ja) 1995-02-14 1997-12-10 日本電気株式会社 プローブカード
JPH10300783A (ja) 1997-04-28 1998-11-13 Mitsubishi Materials Corp コンタクトプローブおよびそれを備えたプローブ装置
JPH1123615A (ja) 1997-05-09 1999-01-29 Hitachi Ltd 接続装置および検査システム
JP3645203B2 (ja) 1997-05-09 2005-05-11 株式会社ルネサステクノロジ 半導体素子の製造方法並びに半導体素子へのプロービング方法及びその装置
JP3315339B2 (ja) 1997-05-09 2002-08-19 株式会社日立製作所 半導体素子の製造方法並びに半導体素子へのプロービング方法およびその装置
TW369601B (en) * 1997-06-17 1999-09-11 Advantest Corp Probe card
JP3458715B2 (ja) 1997-07-15 2003-10-20 株式会社日立製作所 半導体デバイスおよびその実装構造体並びにその製造方法
JP3035275B2 (ja) * 1997-10-13 2000-04-24 松下電器産業株式会社 集積回路素子のプローブ装置
JPH11248759A (ja) 1998-02-27 1999-09-17 Jeol Ltd 検出系回路
JP2000138268A (ja) 1998-11-04 2000-05-16 Hitachi Chem Co Ltd 半導体回路の検査方法及び検査装置
JP2000150594A (ja) 1998-11-05 2000-05-30 Hitachi Ltd 接続装置および押さえ部材付配線フィルムの製造方法並びに検査システムおよび半導体素子の製造方法
US6255727B1 (en) * 1999-08-03 2001-07-03 Advantest Corp. Contact structure formed by microfabrication process
JP3925602B2 (ja) * 1999-06-14 2007-06-06 セイコーエプソン株式会社 接着材料の貼着方法及び半導体装置の製造方法
EP1074844A3 (en) 1999-08-03 2003-08-06 Lucent Technologies Inc. Testing integrated circuits
JP3715160B2 (ja) 1999-12-02 2005-11-09 株式会社ルネサステクノロジ プロービング装置及び半導体素子の製造方法
JP2001319953A (ja) 2000-05-11 2001-11-16 Tokyo Seimitsu Co Ltd プローバ
US6927079B1 (en) * 2000-12-06 2005-08-09 Lsi Logic Corporation Method for probing a semiconductor wafer
JP2002257856A (ja) * 2001-02-28 2002-09-11 Ibiden Co Ltd プローブカード
JP2003282654A (ja) 2002-03-20 2003-10-03 Hitachi Ltd 半導体装置の製造方法
JP3839347B2 (ja) * 2002-04-25 2006-11-01 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004144742A (ja) * 2002-10-02 2004-05-20 Renesas Technology Corp プローブシート、プローブカード、半導体検査装置および半導体装置の製造方法
TWI236723B (en) * 2002-10-02 2005-07-21 Renesas Tech Corp Probe sheet, probe card, semiconductor inspection device, and manufacturing method for semiconductor device
JP2004132699A (ja) 2002-10-08 2004-04-30 Renesas Technology Corp 接続装置、半導体チップ検査装置及び接続装置の製造方法
JP4099412B2 (ja) 2003-03-19 2008-06-11 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP4465995B2 (ja) 2003-07-02 2010-05-26 株式会社日立製作所 プローブシート、プローブカード、半導体検査装置および半導体装置の製造方法
JP2005136246A (ja) * 2003-10-31 2005-05-26 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2005136302A (ja) 2003-10-31 2005-05-26 Renesas Technology Corp 半導体集積回路装置の製造方法
JP4521611B2 (ja) 2004-04-09 2010-08-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JP4755597B2 (ja) 2011-08-24
US20090130785A1 (en) 2009-05-21
WO2006054344A1 (ja) 2006-05-26
CN100508154C (zh) 2009-07-01
JPWO2006054344A1 (ja) 2008-05-29
CN101057321A (zh) 2007-10-17
US7598100B2 (en) 2009-10-06
TWI385741B (zh) 2013-02-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees