EP1653503A3 - Semiconductor device, circuit board, electro-optic device, electronic device - Google Patents

Semiconductor device, circuit board, electro-optic device, electronic device Download PDF

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Publication number
EP1653503A3
EP1653503A3 EP05023273A EP05023273A EP1653503A3 EP 1653503 A3 EP1653503 A3 EP 1653503A3 EP 05023273 A EP05023273 A EP 05023273A EP 05023273 A EP05023273 A EP 05023273A EP 1653503 A3 EP1653503 A3 EP 1653503A3
Authority
EP
European Patent Office
Prior art keywords
electro
circuit board
optic
semiconductor device
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05023273A
Other languages
German (de)
French (fr)
Other versions
EP1653503A2 (en
Inventor
Shuichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of EP1653503A2 publication Critical patent/EP1653503A2/en
Publication of EP1653503A3 publication Critical patent/EP1653503A3/en
Withdrawn legal-status Critical Current

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    • H01L23/562—Protection against mechanical damage
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor device including a semiconductor element (121), an electrode pad (24) formed on the semiconductor element (121), and a bump electrode (10) conductively connected to the electrode pad (24) which includes a resin bump (12) formed on an active face (121a) of the semiconductor element (121) and a conductive layer (20) provided from the electrode pad (24) to the surface of the resin bump (12), the conductive layer (20) and the resin bump (12) being arranged without adhesion.
EP05023273A 2004-10-28 2005-10-25 Semiconductor device, circuit board, electro-optic device, electronic device Withdrawn EP1653503A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004313839A JP4165495B2 (en) 2004-10-28 2004-10-28 Semiconductor device, semiconductor device manufacturing method, circuit board, electro-optical device, electronic device

Publications (2)

Publication Number Publication Date
EP1653503A2 EP1653503A2 (en) 2006-05-03
EP1653503A3 true EP1653503A3 (en) 2012-04-18

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EP05023273A Withdrawn EP1653503A3 (en) 2004-10-28 2005-10-25 Semiconductor device, circuit board, electro-optic device, electronic device

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US (1) US7375427B2 (en)
EP (1) EP1653503A3 (en)
JP (1) JP4165495B2 (en)
KR (1) KR100754575B1 (en)
CN (1) CN100424862C (en)
TW (1) TWI277159B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7960830B2 (en) * 2003-11-14 2011-06-14 Industrial Technology Research Institute Electronic assembly having a multilayer adhesive structure
US8604613B2 (en) * 2003-11-14 2013-12-10 Industrial Technology Research Institute Electronic assembly having a multilayer adhesive structure
JP4269173B2 (en) 2005-07-06 2009-05-27 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof
JP2007214164A (en) * 2006-02-07 2007-08-23 Epson Imaging Devices Corp Electro-optical apparatus, method for manufacturing the same semiconductor device, and electronic apparatus
JP2007258518A (en) * 2006-03-24 2007-10-04 Epson Imaging Devices Corp Semiconductor device, electro-optic device, and electronic device
JP4920330B2 (en) * 2006-07-18 2012-04-18 ソニー株式会社 Mounting method for mounting structure, mounting method for light emitting diode display, mounting method for light emitting diode backlight, and mounting method for electronic device
JP4862529B2 (en) * 2006-07-21 2012-01-25 株式会社セガ Game machine, game processing method, and storage medium storing program
JP4273356B2 (en) 2007-02-21 2009-06-03 セイコーエプソン株式会社 Manufacturing method of semiconductor device
JP4548459B2 (en) 2007-08-21 2010-09-22 セイコーエプソン株式会社 Electronic component mounting structure
JP5169071B2 (en) * 2007-08-21 2013-03-27 セイコーエプソン株式会社 Electronic component, electronic device, mounting structure for electronic component, and method for manufacturing mounting structure for electronic component
JP4535295B2 (en) * 2008-03-03 2010-09-01 セイコーエプソン株式会社 Semiconductor module and manufacturing method thereof
CN101866899A (en) * 2009-04-20 2010-10-20 奇景光电股份有限公司 Semiconductor device
JP2011061035A (en) * 2009-09-10 2011-03-24 Renesas Electronics Corp Method of manufacturing semiconductor device, and mask
JP5685807B2 (en) * 2009-12-03 2015-03-18 富士通株式会社 Electronic equipment
KR20130030494A (en) * 2011-09-19 2013-03-27 삼성전기주식회사 Plating pattern and method of manufacturing the same
KR102540850B1 (en) * 2016-07-29 2023-06-07 삼성디스플레이 주식회사 Integrated circuit chip and display device comprising the same
KR101897653B1 (en) * 2017-03-06 2018-09-12 엘비세미콘 주식회사 Methods of fabricating compliant bump
CN110164830B (en) * 2019-04-26 2021-02-05 厦门云天半导体科技有限公司 Three-dimensional interconnection structure of power device and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020127768A1 (en) * 2000-11-18 2002-09-12 Badir Muhannad S. Compliant wafer-level packaging devices and methods of fabrication

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621257Y2 (en) 1987-07-16 1994-06-01 三洋電機株式会社 Solid-state imaging device
JP2833326B2 (en) * 1992-03-03 1998-12-09 松下電器産業株式会社 Electronic component mounted connector and method of manufacturing the same
JP3297144B2 (en) 1993-05-11 2002-07-02 シチズン時計株式会社 Protrusion electrode and method of manufacturing the same
TW324847B (en) * 1996-12-13 1998-01-11 Ind Tech Res Inst The structure of composite bump
JPH10321631A (en) * 1997-05-19 1998-12-04 Oki Electric Ind Co Ltd Semiconductor device and its manufacture
JP2001110831A (en) 1999-10-07 2001-04-20 Seiko Epson Corp External connecting protrusion and its forming method, semiconductor chip, circuit board and electronic equipment
JP3969295B2 (en) * 2002-12-02 2007-09-05 セイコーエプソン株式会社 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, CIRCUIT BOARD, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020127768A1 (en) * 2000-11-18 2002-09-12 Badir Muhannad S. Compliant wafer-level packaging devices and methods of fabrication

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BAKIR M S ET AL: "Sea of Leads Ultra High-Density Compliant Wafer-Level Packaging Technology", 2002 PROCEEDINGS 52ND. ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE. ECTC 2002. SAN DIEGO, CA, MAY 28 - 31, 2002; [PROCEEDINGS OF THE ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE], NEW YORK, NY : IEEE, US, PAGE(S) 1087 - 1094, ISBN: 978-0-7803-7430-0, XP010747768 *
YASAITIS J A ET AL (EDITORS): "Micromachining and Microfabrication Process Technology VIII, PROCEEDINGS OF SPIE", vol. 4979, 2003, SPIE, ISSN: 0277-786X, article REED H A ET AL: "Fabrication of Microchannels for Compliant Wafer Level Packaging Using Sacrificial Materials", pages: 287 - 294, XP055012158 *

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