TW200623270A - Gate stacks - Google Patents

Gate stacks

Info

Publication number
TW200623270A
TW200623270A TW094134172A TW94134172A TW200623270A TW 200623270 A TW200623270 A TW 200623270A TW 094134172 A TW094134172 A TW 094134172A TW 94134172 A TW94134172 A TW 94134172A TW 200623270 A TW200623270 A TW 200623270A
Authority
TW
Taiwan
Prior art keywords
gate
gate stack
layer
dielectric layer
substrate
Prior art date
Application number
TW094134172A
Other languages
English (en)
Chinese (zh)
Inventor
Dale W Martin
Steven M Shank
Michael C Triplett
Deborah A Tucker
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200623270A publication Critical patent/TW200623270A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094134172A 2004-10-01 2005-09-30 Gate stacks TW200623270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/711,742 US7157341B2 (en) 2004-10-01 2004-10-01 Gate stacks

Publications (1)

Publication Number Publication Date
TW200623270A true TW200623270A (en) 2006-07-01

Family

ID=36126115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134172A TW200623270A (en) 2004-10-01 2005-09-30 Gate stacks

Country Status (6)

Country Link
US (2) US7157341B2 (enExample)
EP (1) EP1805798B1 (enExample)
JP (1) JP2008515240A (enExample)
CN (1) CN101032024B (enExample)
TW (1) TW200623270A (enExample)
WO (1) WO2006039632A2 (enExample)

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US8062707B2 (en) * 2005-02-17 2011-11-22 Konica Minolta Holdings, Inc. Gas barrier film, gas barrier film manufacturing method, resin substrate for organic electroluminescent device using the aforesaid gas barrier film, and organic electroluminescent device using the aforementioned gas barrier film
US8486487B2 (en) 2005-02-17 2013-07-16 Konica Minolta Holdings, Inc. Gas barrier film, gas barrier film manufacturing method, resin substrate for organic electroluminescent device using the aforesaid gas barrier film, and organic electroluminescent device using the aforementioned gas barrier film
US7271079B2 (en) * 2005-04-06 2007-09-18 International Business Machines Corporation Method of doping a gate electrode of a field effect transistor
KR100633988B1 (ko) * 2005-06-23 2006-10-13 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
JP2009026777A (ja) * 2007-07-17 2009-02-05 Renesas Technology Corp 半導体装置の製造方法
US8173532B2 (en) 2007-07-30 2012-05-08 International Business Machines Corporation Semiconductor transistors having reduced distances between gate electrode regions
CN101728255B (zh) * 2008-10-21 2011-07-20 中芯国际集成电路制造(北京)有限公司 在晶圆上制造栅极的方法
JP2020035789A (ja) 2018-08-27 2020-03-05 キオクシア株式会社 半導体装置
CN118055613A (zh) * 2022-11-08 2024-05-17 长鑫存储技术有限公司 半导体结构及其形成方法

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JPH04142777A (ja) * 1990-10-03 1992-05-15 Kawasaki Steel Corp ゲート電極又は配線の形成方法
JP3316027B2 (ja) * 1993-03-16 2002-08-19 株式会社半導体エネルギー研究所 絶縁ゲート型電界効果半導体装置の作製方法
JP2536413B2 (ja) * 1993-06-28 1996-09-18 日本電気株式会社 半導体集積回路装置の製造方法
US5459091A (en) * 1993-10-12 1995-10-17 Goldstar Electron Co., Ltd. Method for fabricating a non-volatile memory device
FR2711275B1 (fr) * 1993-10-15 1996-10-31 Intel Corp Procédé automatiquement aligné de contact en fabrication de semi-conducteurs et dispositifs produits.
US5545581A (en) * 1994-12-06 1996-08-13 International Business Machines Corporation Plug strap process utilizing selective nitride and oxide etches
JP3390895B2 (ja) * 1995-05-19 2003-03-31 富士通株式会社 Ｍｏｓ型半導体装置の製造方法
DE19526184A1 (de) * 1995-07-18 1997-04-03 Siemens Ag Verfahren zur Herstellung eines MOS-Transistors
JP3145929B2 (ja) * 1996-08-15 2001-03-12 日本電気株式会社 半導体装置の製造方法
JPH1167927A (ja) * 1997-06-09 1999-03-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
FR2765394B1 (fr) * 1997-06-25 1999-09-24 France Telecom Procede d'obtention d'un transistor a grille en silicium-germanium
JPH11135773A (ja) * 1997-10-27 1999-05-21 Fujitsu Ltd 半導体装置及びその製造方法
US6278165B1 (en) * 1998-06-29 2001-08-21 Kabushiki Kaisha Toshiba MIS transistor having a large driving current and method for producing the same
US6143611A (en) * 1998-07-30 2000-11-07 Micron Technology, Inc. Semiconductor processing methods, methods of forming electronic components, and transistors
US6483736B2 (en) * 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
JP2000269490A (ja) * 1999-03-16 2000-09-29 Fujitsu Ltd 半導体装置の製造方法
US6265297B1 (en) * 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
JP2001326348A (ja) * 2000-05-16 2001-11-22 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
US6624011B1 (en) * 2000-08-14 2003-09-23 Matrix Semiconductor, Inc. Thermal processing for three dimensional circuits
US6562684B1 (en) * 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
US20020072210A1 (en) * 2000-11-29 2002-06-13 Chi-Min Hsu Method for forming liner layer in sin spacer
JP4932087B2 (ja) * 2001-01-29 2012-05-16 三菱電機株式会社 半導体装置およびその製造方法
US6525953B1 (en) * 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6812515B2 (en) * 2001-11-26 2004-11-02 Hynix Semiconductor, Inc. Polysilicon layers structure and method of forming same
JP3873771B2 (ja) * 2002-02-22 2007-01-24 ソニー株式会社 半導体装置の製造方法
US7098098B2 (en) 2002-04-16 2006-08-29 Texas Instruments Incorporated Methods for transistors formation using selective gate implantation
JP3487844B1 (ja) * 2002-06-14 2004-01-19 沖電気工業株式会社 Ｌｄｍｏｓ型半導体装置の製造方法
US20040033677A1 (en) * 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US6686637B1 (en) * 2002-11-21 2004-02-03 International Business Machines Corporation Gate structure with independently tailored vertical doping profile
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US6930362B1 (en) * 2003-10-30 2005-08-16 Lsi Logic Corporation Calcium doped polysilicon gate electrodes

Also Published As

Publication number Publication date
EP1805798A2 (en) 2007-07-11
CN101032024B (zh) 2011-02-09
JP2008515240A (ja) 2008-05-08
WO2006039632A3 (en) 2006-08-10
WO2006039632A2 (en) 2006-04-13
EP1805798A4 (en) 2009-08-05
CN101032024A (zh) 2007-09-05
US20070194385A1 (en) 2007-08-23
US20060073688A1 (en) 2006-04-06
US7378712B2 (en) 2008-05-27
US7157341B2 (en) 2007-01-02
EP1805798B1 (en) 2014-08-13

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