JP2008515240A - ゲート・スタック - Google Patents

ゲート・スタック Download PDF

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Publication number
JP2008515240A
JP2008515240A JP2007534850A JP2007534850A JP2008515240A JP 2008515240 A JP2008515240 A JP 2008515240A JP 2007534850 A JP2007534850 A JP 2007534850A JP 2007534850 A JP2007534850 A JP 2007534850A JP 2008515240 A JP2008515240 A JP 2008515240A
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JP
Japan
Prior art keywords
region
gate
diffusion barrier
layer
spacer oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007534850A
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English (en)
Japanese (ja)
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JP2008515240A5 (enExample
Inventor
マーティン、デール、ダブリュー
シャンク、スティーブン、エム
トリプレット、マイケル、シー
タッカー、デボラ、エー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2008515240A publication Critical patent/JP2008515240A/ja
Publication of JP2008515240A5 publication Critical patent/JP2008515240A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007534850A 2004-10-01 2005-09-30 ゲート・スタック Pending JP2008515240A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/711,742 US7157341B2 (en) 2004-10-01 2004-10-01 Gate stacks
PCT/US2005/035455 WO2006039632A2 (en) 2004-10-01 2005-09-30 Gate stacks

Publications (2)

Publication Number Publication Date
JP2008515240A true JP2008515240A (ja) 2008-05-08
JP2008515240A5 JP2008515240A5 (enExample) 2008-08-28

Family

ID=36126115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007534850A Pending JP2008515240A (ja) 2004-10-01 2005-09-30 ゲート・スタック

Country Status (6)

Country Link
US (2) US7157341B2 (enExample)
EP (1) EP1805798B1 (enExample)
JP (1) JP2008515240A (enExample)
CN (1) CN101032024B (enExample)
TW (1) TW200623270A (enExample)
WO (1) WO2006039632A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8062707B2 (en) * 2005-02-17 2011-11-22 Konica Minolta Holdings, Inc. Gas barrier film, gas barrier film manufacturing method, resin substrate for organic electroluminescent device using the aforesaid gas barrier film, and organic electroluminescent device using the aforementioned gas barrier film
US8486487B2 (en) 2005-02-17 2013-07-16 Konica Minolta Holdings, Inc. Gas barrier film, gas barrier film manufacturing method, resin substrate for organic electroluminescent device using the aforesaid gas barrier film, and organic electroluminescent device using the aforementioned gas barrier film
US7271079B2 (en) * 2005-04-06 2007-09-18 International Business Machines Corporation Method of doping a gate electrode of a field effect transistor
KR100633988B1 (ko) * 2005-06-23 2006-10-13 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
JP2009026777A (ja) * 2007-07-17 2009-02-05 Renesas Technology Corp 半導体装置の製造方法
US8173532B2 (en) 2007-07-30 2012-05-08 International Business Machines Corporation Semiconductor transistors having reduced distances between gate electrode regions
CN101728255B (zh) * 2008-10-21 2011-07-20 中芯国际集成电路制造(北京)有限公司 在晶圆上制造栅极的方法
JP2020035789A (ja) 2018-08-27 2020-03-05 キオクシア株式会社 半導体装置
CN118055613A (zh) * 2022-11-08 2024-05-17 长鑫存储技术有限公司 半导体结构及其形成方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190981A (ja) * 1985-02-20 1986-08-25 Casio Comput Co Ltd 半導体装置
JPH04142777A (ja) * 1990-10-03 1992-05-15 Kawasaki Steel Corp ゲート電極又は配線の形成方法
JPH06268213A (ja) * 1993-03-16 1994-09-22 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPH08316466A (ja) * 1995-05-19 1996-11-29 Fujitsu Ltd Ｍｏｓ型半導体装置とその製造方法
JPH1065152A (ja) * 1996-08-15 1998-03-06 Nec Corp 半導体装置の製造方法
JPH11135773A (ja) * 1997-10-27 1999-05-21 Fujitsu Ltd 半導体装置及びその製造方法
JP2000269490A (ja) * 1999-03-16 2000-09-29 Fujitsu Ltd 半導体装置の製造方法
JP2001326348A (ja) * 2000-05-16 2001-11-22 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP2002222947A (ja) * 2001-01-29 2002-08-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003249657A (ja) * 2002-02-22 2003-09-05 Sony Corp 半導体装置の製造方法
JP2004022765A (ja) * 2002-06-14 2004-01-22 Oki Electric Ind Co Ltd Ｌｄｍｏｓ型半導体装置の製造方法

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JP2536413B2 (ja) * 1993-06-28 1996-09-18 日本電気株式会社 半導体集積回路装置の製造方法
US5459091A (en) * 1993-10-12 1995-10-17 Goldstar Electron Co., Ltd. Method for fabricating a non-volatile memory device
FR2711275B1 (fr) * 1993-10-15 1996-10-31 Intel Corp Procédé automatiquement aligné de contact en fabrication de semi-conducteurs et dispositifs produits.
US5545581A (en) * 1994-12-06 1996-08-13 International Business Machines Corporation Plug strap process utilizing selective nitride and oxide etches
DE19526184A1 (de) * 1995-07-18 1997-04-03 Siemens Ag Verfahren zur Herstellung eines MOS-Transistors
JPH1167927A (ja) * 1997-06-09 1999-03-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
FR2765394B1 (fr) * 1997-06-25 1999-09-24 France Telecom Procede d'obtention d'un transistor a grille en silicium-germanium
US6278165B1 (en) * 1998-06-29 2001-08-21 Kabushiki Kaisha Toshiba MIS transistor having a large driving current and method for producing the same
US6143611A (en) * 1998-07-30 2000-11-07 Micron Technology, Inc. Semiconductor processing methods, methods of forming electronic components, and transistors
US6483736B2 (en) * 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6265297B1 (en) * 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US6624011B1 (en) * 2000-08-14 2003-09-23 Matrix Semiconductor, Inc. Thermal processing for three dimensional circuits
US6562684B1 (en) * 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
US20020072210A1 (en) * 2000-11-29 2002-06-13 Chi-Min Hsu Method for forming liner layer in sin spacer
US6525953B1 (en) * 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6812515B2 (en) * 2001-11-26 2004-11-02 Hynix Semiconductor, Inc. Polysilicon layers structure and method of forming same
US7098098B2 (en) 2002-04-16 2006-08-29 Texas Instruments Incorporated Methods for transistors formation using selective gate implantation
US20040033677A1 (en) * 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US6686637B1 (en) * 2002-11-21 2004-02-03 International Business Machines Corporation Gate structure with independently tailored vertical doping profile
US20050048732A1 (en) * 2003-08-26 2005-03-03 International Business Machines Corporation Method to produce transistor having reduced gate height
US6930362B1 (en) * 2003-10-30 2005-08-16 Lsi Logic Corporation Calcium doped polysilicon gate electrodes

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190981A (ja) * 1985-02-20 1986-08-25 Casio Comput Co Ltd 半導体装置
JPH04142777A (ja) * 1990-10-03 1992-05-15 Kawasaki Steel Corp ゲート電極又は配線の形成方法
JPH06268213A (ja) * 1993-03-16 1994-09-22 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPH08316466A (ja) * 1995-05-19 1996-11-29 Fujitsu Ltd Ｍｏｓ型半導体装置とその製造方法
JPH1065152A (ja) * 1996-08-15 1998-03-06 Nec Corp 半導体装置の製造方法
JPH11135773A (ja) * 1997-10-27 1999-05-21 Fujitsu Ltd 半導体装置及びその製造方法
JP2000269490A (ja) * 1999-03-16 2000-09-29 Fujitsu Ltd 半導体装置の製造方法
JP2001326348A (ja) * 2000-05-16 2001-11-22 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP2002222947A (ja) * 2001-01-29 2002-08-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003249657A (ja) * 2002-02-22 2003-09-05 Sony Corp 半導体装置の製造方法
JP2004022765A (ja) * 2002-06-14 2004-01-22 Oki Electric Ind Co Ltd Ｌｄｍｏｓ型半導体装置の製造方法

Also Published As

Publication number Publication date
TW200623270A (en) 2006-07-01
EP1805798A2 (en) 2007-07-11
CN101032024B (zh) 2011-02-09
WO2006039632A3 (en) 2006-08-10
WO2006039632A2 (en) 2006-04-13
EP1805798A4 (en) 2009-08-05
CN101032024A (zh) 2007-09-05
US20070194385A1 (en) 2007-08-23
US20060073688A1 (en) 2006-04-06
US7378712B2 (en) 2008-05-27
US7157341B2 (en) 2007-01-02
EP1805798B1 (en) 2014-08-13

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