Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
  • H01L21/28008—Making conductor-insulator-semiconductor electrodes
  • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
  • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
  • H01L21/28008—Making conductor-insulator-semiconductor electrodes
  • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
  • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
  • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/60—Electrodes characterised by their materials
  • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
  • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
  • Y10S257/90—MOSFET type gate sidewall insulating spacer

Definitions

• the present invention relates to gate stacks, and more particularly, to a gate stack of a transistor wherein the top region of the gate stack is less likely to break off than the top region of a typical gate stack during the fabrication of the transistor.
• a typical fabrication process of a transistor can start with the formation of a gate stack on a semiconductor substrate. Then, the gate stack can be used to define the source/drain regions of the transistor in the substrate. Eventually, the gate stack becomes the gate of the transistor. There is always a need to reduce the resistance of the gate of the transistor to improve the performance of the transistor.
• the present invention provides a method of forming a semiconductor structure, comprising the steps of (a) providing a semiconductor region; (b) forming a gate stack on top of the semiconductor region, the gate stack including (i) a gate dielectric region on top of the semiconductor region, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region, the second gate polysilicon region being doped with a type of dopants; and (c) forming on a side wall of the gate stack a diffusion barrier region and a spacer oxide region, wherein the diffusion barrier region is sandwiched between the gate stack and the spacer oxide region, and wherein the diffusion barrier region is in direct physical contact with both the first and second gate polysilicon regions.
• the present invention also provides a semiconductor structure, comprising (a) a semiconductor region; (b) a gate stack on top of the semiconductor region, the gate stack including (i) a gate dielectric region on top of the semiconductor region, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region, the second gate polysilicon region being doped with a type of dopants; and (c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack, wherein the diffusion barrier region is sandwiched between the gate stack and the spacer oxide region, and wherein the diffusion barrier region is in direct physical contact with both the first and second gate polysilicon regions.
• the present invention also provides a method of forming a semiconductor structure, comprising the steps of (a) providing a semiconductor substrate; (b) forming a gate stack on top of the semiconductor substrate, the gate stack including (i) a gate dielectric region on top of the semiconductor substrate, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region, the second gate polysilicon region being heavily doped with a type of dopants; and (c) forming on first and second side walls of the gate stack first and second diffusion barrier regions and first and second spacer oxide regions, respectively, wherein the first diffusion barrier region is sandwiched between the gate stack and the first spacer oxide region, wherein the first diffusion barrier region is in direct physical contact with both the first and second gate polysilicon regions, wherein the second diffusion barrier region is sandwiched between the gate stack and the second spacer oxide region, and wherein the second diffusion barrier region is in direct physical contact with both the first and second
• the present invention provides the advantage of for a novel gate stack whose top region is less likely to break off than the top region of a typical gate stack.
• FIG. IA- 1C illustrate cross-sectional views of a semiconductor structure after each of a series of fabrication steps is performed, in accordance with embodiments of the present invention.
• FIG. 2 illustrates an oxidation system for performing an oxidation step described with respect to FIG. IDii, in accordance with embodiments of the present invention.
• FIG. IA illustrates a cross-sectional view of the semiconductor structure 100 after a gate dielectric layer 120 and then a gate polysilicon layer 130 are formed on top of a semiconductor (e.g., silicon Si, germanium Ge, a mixture of Si and Ge, etc.) substrate 110, in accordance with embodiments of the present invention. More specifically, the fabrication process of the structure 100 of FIG. IA starts out with the Si substrate 110. Then, in one embodiment, the gate dielectric layer 120 can be formed by thermally oxidizing a top surface of the Si substrate 110 in a first thermal oxidation step. As a result, the resulting gate dielectric layer 120 comprises silicon dioxide (SiO 2 ). Then, the gate polysilicon layer 130 can be formed by depositing silicon on top of the SiO 2 gate dielectric layer 120 using, illustratively, a CVD (chemical vapor deposition) process.
• a CVD chemical vapor deposition
• FIG. IB illustrates a cross-sectional view of the semiconductor structure 100 after a heavily-doped gate polysilicon layer 130a is formed at top of the semiconductor structure 100 of FIG. IA, in accordance with embodiments of the present invention.
• dopants of one type e.g., n-type phosphorous or p-type boron
• the gate polysilicon layer 130 comprises two layers: the heavily-doped gate polysilicon layer 130a and the undoped (or lightly doped) gate polysilicon layer 130b.
• FIG. 1C illustrates a cross-sectional view of the semiconductor structure 100 after portions of the gate polysilicon layer 130 and the gate dielectric layer 120 are removed so as to form a gate stack 132,134,122, in accordance with embodiments of the present invention.
• a photoresist mask (not shown) is laid on a top surface 135 of the heavily-doped gate polysilicon layer 130a of FIG. IB.
• the photoresist mask covers an area of the top surface 135 under which the gate stack 132,134,122 is to be formed.
• portions of the gate polysilicon layer 130 not covered by the photoresist mask is chemically etched away in a first chemical etching step.
• portions of the gate dielectric layer 120 not covered by the photoresist mask is chemically etched away a second chemical etching step.
• the gate stack 132,134,122 What remains of the gate polysilicon layer 130 and the gate dielectric layer 120 after the first and second chemical etching steps is the gate stack 132,134,122. More specifically, what remains of the heavily-doped gate polysilicon layer 130a after the first chemical etching step is the heavily-doped gate polysilicon region 132. What remains of the undoped gate polysilicon layer 130b after the first chemical etching step is the undoped gate polysilicon region 134. Finally, what remains of the gate dielectric layer 120 after the second chemical etching step is the gate dielectric region 122.
• FIG. IDi illustrates a cross-sectional view of the semiconductor structure 100 after a spacer oxide layer 150 are formed on exposed surfaces of the gate stack 132,134,122 and the substrate 110 of FIG. 1C, in accordance with embodiments of the present invention. More specifically, in one embodiment, the semiconductor structure 100 of FIG. 1C is subjected to a second thermal oxidation step with the presence of oxygen (and/or oxygen-carrying material). As a result, oxygen reacts with silicon to form silicon dioxide SiO 2 constituting the spacer oxide layer 150. Assume that the gate polysilicon region 132 is doped with n-type dopants.
• the spacer oxide layer 150 is thicker at the heavily-doped gate polysilicon region 132 than at the undoped gate polysilicon region 134, meaning the thickness 162 is larger than the thickness 164 (FIG. IDi).
• the width 166 (i.e., in direction 137) of the heavily-doped gate polysilicon region 132 is narrower than the width 168 of the undoped gate polysilicon region 134.
• FIG. IDii illustrates an alternative embodiment of the structure 100 of FIG. IDii.
• FIG. IDii illustrates a cross-sectional view of the semiconductor structure 100 after a diffusion barrier layer 170 and a spacer oxide layer 180 are formed on exposed surfaces of the gate stack 132,134,122 and the substrate 110 of FIG. 1C, in accordance with embodiments of the present invention. More specifically, in one embodiment, the semiconductor structure 100 of FIG. 1C is subjected to a third thermal oxidation step with the presence of oxygen (and/or oxygen-carrying material) and a nitrogen-carrying gas (e.g., N 2 O or NO).
• oxygen and/or oxygen-carrying material
• a nitrogen-carrying gas e.g., N 2 O or NO
• first, second, and third thermal oxidation steps refer to three separate, independent thermal oxidation steps and do not necessarily mean that all of the first, second, and third thermal oxidation steps must be performed in one embodiment, or that they must be performed in the order of first, second, and then third.
• the structure 100 of FIG. IDii involves only the first and third thermal oxidation steps (not the second thermal oxidation step).
• the third oxidation step with the presence of the nitrogen-carrying gas is performed in a furnace (not shown) at a high temperature, illustratively, in the range of 900 0 C - HOO 0 C.
• the diffusion barrier layer 170 As a result of the third thermal oxidation step, nitrogen atoms diffuse into the gate polysilicon regions 132 and 134 of the gate stack 132,134,122 and reacts with silicon to form oxynitride silicon constituting the diffusion barrier layer 170 at a depth 185.
• the formation of the diffusion barrier layer 170 is self-limiting, meaning that the just-formed diffusion barrier layer 170 prevents more nitrogen atoms from diffusing through the diffusion barrier layer 170 itself.
• the diffusion barrier layer 170 also prevents more oxygen atoms (which, in one embodiment, can come from oxygen gas and/used for the third thermal oxidation step) from diffusing through it.
• the nitrogen-carrying gas can be replaced by any equivalent gas that can react with silicon to form a diffusion barrier layer capable of preventing oxygen and/or oxygen-carrying materials from diffusing through it.
• the diffusion barrier layer 170 and the spacer oxide layer 180 are simultaneously formed in the third thermal oxidation step.
• the diffusion barrier layer 170 can be formed first, and then the spacer oxide layer 180 is formed. More specifically, in one embodiment, the diffusion barrier layer 170 can be formed by implanting nitrogen in a top layer (not shown) under the exposed surfaces of the regions 132 and 134, and then raising the temperature at the exposed surfaces of the regions 132 and 134 so as to cause the implanted nitrogen to react with silicon of the regions 132 and 134 to form silicon nitride (Si 3 N 4 ) constituting the diffusion barrier layer 170. Then, the spacer oxide layer 180 can be formed by depositing SiO 2 on top of the diffusion barrier layer 170 using, illustratively, a CVD step. It should be noted that like oxynitride silicon, silicon nitride also prevents oxygen diffusion.
• the oxynitride silicon diffusion barrier layer 170 is formed at the same depth 185 from the exposed surfaces of the gate polysilicon regions 132 and 134. As a result, the thickness 182 of the spacer oxide layer 180 resulting from the oxidation of the n-type doped polysilicon region 132 and the thickness 184 of the spacer oxide layer 180 resulting from the oxidation of the undoped polysilicon region 134 are equal. Because the diffusion barrier layer 170 has the same thickness whether it results from the nitridation of polysilicon of the region 132 or region 134, the widths 186 and 188 (in direction 197) of the polysilicon regions 132 and 134, respectively, are also equal.
• FIG. IE illustrates a cross-sectional view of the semiconductor structure 100 after top portions of the diffusion barrier layer 170 and the spacer oxide layer 180 above the gate stack 132,134,122 of FIG. IDii are removed, in accordance with embodiments of the present invention. More specifically, in one embodiment, the top portions of the diffusion barrier layer 170 and the spacer oxide layer 180 above the gate stack 132,134,122 (FIG. IDii) can be removed by, illustratively, a CMP (chemical mechanical polishing) step. What remains of the diffusion barrier layer 170 is the diffusion barrier regions 170a and 170b, and what remains of the spacer oxide layer 180 is the spacer oxide regions 180a and 180b. The spacer oxide regions 180a and 180b can be used to define source/drain regions (not shown) in the substrate 110.
• CMP chemical mechanical polishing
• FIG. 2 illustrates an oxidation system 200 for performing the third oxidation step described supra with respect to FIG. 1 Dii.
• the oxidation system 200 comprises a pre-heat chamber 210 and an oxidation furnace 220 containing the structure 100 of FIG. 1C.
• the nitrogen-carrying gas is first heated up in the pre-heat chamber 210 to a high temperature (700 0 C- 900 0 C). Then, the pre-heated nitrogen-carrying gas is led to the oxidation furnace 220.
• the top surfaces of the structure 100 is also heated to 700 0 C -900 0 C. At this temperature range, the third oxidation step occurs as described supra.
• the third oxidation step can be carried out in the oxidation furnace 220 at a lower temperature than without the preheating step (i.e., at 700 °C-900°C as opposed to 900 0 C-1100 0 C).
• the thin diffusion barrier layer 170 is formed at a same depth 185 in the gate polysilicon regions 132 and 134 regardless of doping concentration. Therefore, the resulting gate polysilicon regions
• FIG. IDii widths 186 and 188, respectively.
• the region 132 of FIG. IDii is less likely to break off than the case of FIG. IDi during ensuing fabrication steps (e.g., a chemical mechanical polishing step).
• the gate polysilicon region 134 is undoped.
• the gate polysilicon region 134 can be lightly doped with either n-type or p-type dopants or both.

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• Computer Hardware Design (AREA)
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• Insulated Gate Type Field-Effect Transistor (AREA)
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• 2004
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• 2005
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