TW200620623A - Semiconductor chip manufacturing method, semiconductor chip, semiconductor device manufacturing method, and semiconductor device - Google Patents

Semiconductor chip manufacturing method, semiconductor chip, semiconductor device manufacturing method, and semiconductor device

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Publication number
TW200620623A
TW200620623A TW094127610A TW94127610A TW200620623A TW 200620623 A TW200620623 A TW 200620623A TW 094127610 A TW094127610 A TW 094127610A TW 94127610 A TW94127610 A TW 94127610A TW 200620623 A TW200620623 A TW 200620623A
Authority
TW
Taiwan
Prior art keywords
concave portion
side concave
semiconductor
manufacturing
semiconductor chip
Prior art date
Application number
TW094127610A
Other languages
English (en)
Other versions
TWI364107B (en
Inventor
Kazumasa Tanida
Yoshihiko Nemoto
Kenji Takahashi
Original Assignee
Rohm Co Ltd
Renesas Tech Corp
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd, Renesas Tech Corp, Toshiba Kk filed Critical Rohm Co Ltd
Publication of TW200620623A publication Critical patent/TW200620623A/zh
Application granted granted Critical
Publication of TWI364107B publication Critical patent/TWI364107B/zh

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Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4340517B2 (ja) 2003-10-30 2009-10-07 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
TWI313914B (en) * 2005-01-31 2009-08-21 Sanyo Electric Co Semiconductor device and a method for manufacturing thereof
US8278738B2 (en) * 2005-02-17 2012-10-02 Sharp Kabushiki Kaisha Method of producing semiconductor device and semiconductor device
JP5048230B2 (ja) * 2005-03-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置およびその製造方法
WO2007023950A1 (ja) * 2005-08-26 2007-03-01 Hitachi, Ltd. 半導体装置の製造方法
JP2007234881A (ja) * 2006-03-01 2007-09-13 Oki Electric Ind Co Ltd 半導体チップを積層した半導体装置及びその製造方法
BRPI0708574A2 (pt) 2006-03-06 2011-05-31 Honda Motor Co Ltd motor
KR100743648B1 (ko) * 2006-03-17 2007-07-27 주식회사 하이닉스반도체 웨이퍼 레벨 시스템 인 패키지의 제조방법
KR100884238B1 (ko) * 2006-05-22 2009-02-17 삼성전자주식회사 앵커형 결합 구조를 갖는 반도체 패키지 및 그 제조 방법
US7473577B2 (en) * 2006-08-11 2009-01-06 International Business Machines Corporation Integrated chip carrier with compliant interconnect
US8021981B2 (en) * 2006-08-30 2011-09-20 Micron Technology, Inc. Redistribution layers for microfeature workpieces, and associated systems and methods
TWI473245B (zh) 2006-10-31 2015-02-11 Sumitomo Bakelite Co 半導體電子零件及使用該半導體電子零件之半導體裝置
JP4897451B2 (ja) * 2006-12-04 2012-03-14 ルネサスエレクトロニクス株式会社 半導体装置
KR100875955B1 (ko) * 2007-01-25 2008-12-26 삼성전자주식회사 스택 패키지 및 그의 제조 방법
JP5355863B2 (ja) * 2007-04-17 2013-11-27 アプライド マテリアルズ インコーポレイテッド 三次元半導体デバイスの製造方法、基板生産物の製造方法、基板生産物、及び三次元半導体デバイス
JP4937842B2 (ja) * 2007-06-06 2012-05-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102007039754A1 (de) * 2007-06-22 2008-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Substraten
JP2009010178A (ja) * 2007-06-28 2009-01-15 Disco Abrasive Syst Ltd ウェーハの加工方法
JP5302522B2 (ja) * 2007-07-02 2013-10-02 スパンション エルエルシー 半導体装置及びその製造方法
KR100906065B1 (ko) * 2007-07-12 2009-07-03 주식회사 동부하이텍 반도체칩, 이의 제조 방법 및 이를 가지는 적층 패키지
TWI353667B (en) * 2007-07-13 2011-12-01 Xintec Inc Image sensor package and fabrication method thereo
WO2009023462A1 (en) * 2007-08-10 2009-02-19 Spansion Llc Semiconductor device and method for manufacturing thereof
US8205182B1 (en) * 2007-08-22 2012-06-19 Cadence Design Systems, Inc. Automatic synthesis of clock distribution networks
JP2009224492A (ja) * 2008-03-14 2009-10-01 Oki Semiconductor Co Ltd 半導体装置及びその製造方法
JP2009295676A (ja) * 2008-06-03 2009-12-17 Oki Semiconductor Co Ltd 半導体装置及びその製造方法
US8005326B2 (en) * 2008-07-10 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Optical clock signal distribution using through-silicon vias
US8035198B2 (en) * 2008-08-08 2011-10-11 International Business Machines Corporation Through wafer via and method of making same
US8138036B2 (en) 2008-08-08 2012-03-20 International Business Machines Corporation Through silicon via and method of fabricating same
US8384224B2 (en) * 2008-08-08 2013-02-26 International Business Machines Corporation Through wafer vias and method of making same
US8299566B2 (en) * 2008-08-08 2012-10-30 International Business Machines Corporation Through wafer vias and method of making same
US7678696B2 (en) * 2008-08-08 2010-03-16 International Business Machines Corporation Method of making through wafer vias
US8350379B2 (en) * 2008-09-09 2013-01-08 Lsi Corporation Package with power and ground through via
JP5693961B2 (ja) * 2008-09-18 2015-04-01 国立大学法人 東京大学 半導体装置の製造方法
JP2010080897A (ja) * 2008-09-29 2010-04-08 Panasonic Corp 半導体装置及びその製造方法
US7935571B2 (en) * 2008-11-25 2011-05-03 Freescale Semiconductor, Inc. Through substrate vias for back-side interconnections on very thin semiconductor wafers
US7816945B2 (en) * 2009-01-22 2010-10-19 International Business Machines Corporation 3D chip-stack with fuse-type through silicon via
JP5330863B2 (ja) 2009-03-04 2013-10-30 パナソニック株式会社 半導体装置の製造方法
WO2010109746A1 (ja) * 2009-03-27 2010-09-30 パナソニック株式会社 半導体装置及びその製造方法
JP2010251558A (ja) * 2009-04-16 2010-11-04 Toshiba Corp 固体撮像装置
BR112012002138B1 (pt) 2009-07-30 2022-02-01 Qualcomm Incorporated Sistema em pacote
US20110046559A1 (en) * 2009-08-21 2011-02-24 Becton Dickinson France S.A.S. Syringe Assembly Having a Flexible or Slidable Flange
JP2011187771A (ja) * 2010-03-10 2011-09-22 Omron Corp 電極部の構造
FR2957717B1 (fr) * 2010-03-22 2012-05-04 St Microelectronics Sa Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle
FR2958076B1 (fr) * 2010-03-24 2012-08-17 St Microelectronics Sa Procede de formation de vias electriques
KR101097628B1 (ko) * 2010-06-21 2011-12-22 삼성전기주식회사 인쇄회로기판 및 이의 제조방법
TWI422009B (zh) * 2010-07-08 2014-01-01 Nat Univ Tsing Hua 多晶片堆疊結構
TWI422001B (zh) * 2010-11-05 2014-01-01 Unimicron Technology Corp 半導體裝置及其製法
KR101697573B1 (ko) * 2010-11-29 2017-01-19 삼성전자 주식회사 반도체 장치, 그 제조 방법, 및 상기 반도체 장치를 포함하는 반도체 패키지
KR101732975B1 (ko) * 2010-12-03 2017-05-08 삼성전자주식회사 반도체 장치의 제조 방법
WO2012120659A1 (ja) * 2011-03-09 2012-09-13 国立大学法人東京大学 半導体装置の製造方法
CN102856246B (zh) * 2011-06-27 2014-10-29 中芯国际集成电路制造(北京)有限公司 制造半导体器件的方法和半导体器件
JP5660216B2 (ja) * 2011-07-15 2015-01-28 株式会社村田製作所 薄膜デバイスおよび薄膜デバイスの製造方法
KR101828490B1 (ko) 2011-08-30 2018-02-12 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
US20150001570A1 (en) * 2011-09-02 2015-01-01 King Dragon International Inc. LED Package and Method of the Same
US9117941B2 (en) * 2011-09-02 2015-08-25 King Dragon International Inc. LED package and method of the same
US8670638B2 (en) 2011-09-29 2014-03-11 Broadcom Corporation Signal distribution and radiation in a wireless enabled integrated circuit (IC) using a leaky waveguide
US9570420B2 (en) 2011-09-29 2017-02-14 Broadcom Corporation Wireless communicating among vertically arranged integrated circuits (ICs) in a semiconductor package
US9318785B2 (en) 2011-09-29 2016-04-19 Broadcom Corporation Apparatus for reconfiguring an integrated waveguide
US9075105B2 (en) 2011-09-29 2015-07-07 Broadcom Corporation Passive probing of various locations in a wireless enabled integrated circuit (IC)
US8508029B2 (en) * 2011-09-29 2013-08-13 Broadcom Corporation Semiconductor package including an integrated waveguide
US20130119543A1 (en) * 2011-11-16 2013-05-16 Globalfoundries Singapore Pte. Ltd. Through silicon via for stacked wafer connections
US8522186B2 (en) * 2011-12-16 2013-08-27 Industrial Technology Research Institute Method and apparatus of an integrated circuit
KR101918608B1 (ko) * 2012-02-28 2018-11-14 삼성전자 주식회사 반도체 패키지
CN103377995A (zh) * 2012-04-27 2013-10-30 南亚科技股份有限公司 半导体芯片、半导体封装结构以及其形成方法
TWI505421B (zh) * 2012-06-29 2015-10-21 Univ Nat Sun Yat Sen Quadrilateral planar pinless package structure and its circuit device
KR102021884B1 (ko) 2012-09-25 2019-09-18 삼성전자주식회사 후면 본딩 구조체를 갖는 반도체 소자
US8859425B2 (en) 2012-10-15 2014-10-14 Micron Technology, Inc. Devices, systems, and methods related to forming through-substrate vias with sacrificial plugs
US9764153B2 (en) 2013-03-14 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method of forming same
KR101936405B1 (ko) * 2013-06-11 2019-04-03 에스케이하이닉스 주식회사 적층 반도체 패키지 및 이의 제조방법
JP5876893B2 (ja) * 2014-04-02 2016-03-02 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
JP6499400B2 (ja) * 2014-04-04 2019-04-10 キヤノン株式会社 半導体装置の製造方法
KR102479946B1 (ko) * 2016-04-06 2022-12-22 해성디에스 주식회사 반도체 패키지 기판 및 그 제조방법
JP6779701B2 (ja) * 2016-08-05 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体
EP3761357A1 (en) * 2019-07-04 2021-01-06 Infineon Technologies Austria AG Semiconductor device
US11830865B2 (en) * 2021-10-26 2023-11-28 Nanya Technology Corporation Semiconductor device with redistribution structure and method for fabricating the same
US20230343839A1 (en) * 2022-04-26 2023-10-26 Samsung Electronics Co., Ltd. Via structure connecting front side structure of semiconductor device to bspdn, and method of manufacturing the same using sacrificial via structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200631A (en) * 1991-08-06 1993-04-06 International Business Machines Corporation High speed optical interconnect
JP3537447B2 (ja) 1996-10-29 2004-06-14 トル‐シ・テクノロジーズ・インコーポレイテッド 集積回路及びその製造方法
JP4011695B2 (ja) * 1996-12-02 2007-11-21 株式会社東芝 マルチチップ半導体装置用チップおよびその形成方法
JP4364358B2 (ja) * 1999-10-12 2009-11-18 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP2002009223A (ja) 2000-06-21 2002-01-11 Sony Corp 半導体チップ実装用配線基板、その製造方法及び半導体装置
US6696765B2 (en) * 2001-11-19 2004-02-24 Hitachi, Ltd. Multi-chip module
JP2002118224A (ja) 2000-10-05 2002-04-19 Hitachi Ltd マルチチップモジュール
JP3649111B2 (ja) * 2000-10-24 2005-05-18 株式会社村田製作所 高周波回路基板およびそれを用いた高周波モジュールおよびそれを用いた電子装置
JP2002270721A (ja) 2001-03-12 2002-09-20 Fujitsu Ltd 半導体装置及びその製造方法
US6642081B1 (en) * 2002-04-11 2003-11-04 Robert Patti Interlocking conductor method for bonding wafers to produce stacked integrated circuits
US7199050B2 (en) * 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device

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