TW200614255A - Semiconductor memory device with on die termination circuit - Google Patents

Semiconductor memory device with on die termination circuit

Info

Publication number
TW200614255A
TW200614255A TW093141293A TW93141293A TW200614255A TW 200614255 A TW200614255 A TW 200614255A TW 093141293 A TW093141293 A TW 093141293A TW 93141293 A TW93141293 A TW 93141293A TW 200614255 A TW200614255 A TW 200614255A
Authority
TW
Taiwan
Prior art keywords
die termination
memory device
semiconductor memory
termination circuit
data input
Prior art date
Application number
TW093141293A
Other languages
English (en)
Other versions
TWI303436B (en
Inventor
Hee-Bok Kang
Jin-Hong Ahn
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200614255A publication Critical patent/TW200614255A/zh
Application granted granted Critical
Publication of TWI303436B publication Critical patent/TWI303436B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/0264—Arrangements for coupling to transmission lines
    • H04L25/028—Arrangements specific to the transmitter end
    • H04L25/0284—Arrangements to ensure DC-balance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/105—Aspects related to pads, pins or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Memory System (AREA)
TW093141293A 2004-10-30 2004-12-30 Semiconductor memory device with on die termination circuit TWI303436B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040087725A KR100670702B1 (ko) 2004-10-30 2004-10-30 온다이 터미네이션 회로를 구비한 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
TW200614255A true TW200614255A (en) 2006-05-01
TWI303436B TWI303436B (en) 2008-11-21

Family

ID=36261081

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093141293A TWI303436B (en) 2004-10-30 2004-12-30 Semiconductor memory device with on die termination circuit

Country Status (5)

Country Link
US (1) US7161378B2 (zh)
JP (1) JP4403462B2 (zh)
KR (1) KR100670702B1 (zh)
CN (1) CN100508067C (zh)
TW (1) TWI303436B (zh)

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KR100681881B1 (ko) 2006-04-06 2007-02-15 주식회사 하이닉스반도체 반도체 메모리의 온 다이 터미네이션 장치 및 방법
KR100718049B1 (ko) 2006-06-08 2007-05-14 주식회사 하이닉스반도체 반도체 메모리의 온 다이 터미네이션 장치 및 그 제어방법
KR100780646B1 (ko) 2006-10-31 2007-11-30 주식회사 하이닉스반도체 온 다이 터미네이션 장치 및 이를 포함하는 반도체장치.
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KR100875673B1 (ko) 2007-05-14 2008-12-24 주식회사 하이닉스반도체 온 다이 터미네이션 장치 및 이의 캘리브래이션 방법
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US7876123B2 (en) * 2007-10-09 2011-01-25 Lsi Corporation High speed multiple memory interface I/O cell
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JP2009252322A (ja) * 2008-04-09 2009-10-29 Nec Electronics Corp 半導体メモリ装置
JP5430880B2 (ja) * 2008-06-04 2014-03-05 ピーエスフォー ルクスコ エスエイアールエル メモリモジュール及びその使用方法、並びにメモリシステム
DE102008045707A1 (de) * 2008-09-04 2010-03-11 Micronas Gmbh Leiterplatine mit Terminierung einer T-förmigen Signalleitung
US7915912B2 (en) * 2008-09-24 2011-03-29 Rambus Inc. Signal lines with internal and external termination
US7741867B2 (en) * 2008-10-30 2010-06-22 Hewlett-Packard Development Company, L.P. Differential on-line termination
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EP2693641A1 (en) * 2009-02-12 2014-02-05 Mosaid Technologies Incorporated Termination circuit for on-die termination
KR101053530B1 (ko) 2009-07-31 2011-08-03 주식회사 하이닉스반도체 반도체 메모리 장치의 온도 측정 범위 보정 회로
KR101027689B1 (ko) 2009-09-30 2011-04-12 주식회사 하이닉스반도체 데이터 드라이빙 임피던스 자동 조정 회로 및 이를 이용한 반도체 집적회로
KR101789077B1 (ko) * 2010-02-23 2017-11-20 삼성전자주식회사 온-다이 터미네이션 회로, 데이터 출력 버퍼, 반도체 메모리 장치, 메모리 모듈, 온-다이 터미네이션 회로의 구동 방법, 데이터 출력 버퍼의 구동 방법 및 온-다이 터미네이션 트레이닝 방법
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Also Published As

Publication number Publication date
CN1770323A (zh) 2006-05-10
US7161378B2 (en) 2007-01-09
CN100508067C (zh) 2009-07-01
JP2006129423A (ja) 2006-05-18
KR20060038629A (ko) 2006-05-04
KR100670702B1 (ko) 2007-01-17
JP4403462B2 (ja) 2010-01-27
US20060091900A1 (en) 2006-05-04
TWI303436B (en) 2008-11-21

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