TW200540866A - Mram device integrated with other types of circuitry - Google Patents
Mram device integrated with other types of circuitry Download PDFInfo
- Publication number
- TW200540866A TW200540866A TW093137531A TW93137531A TW200540866A TW 200540866 A TW200540866 A TW 200540866A TW 093137531 A TW093137531 A TW 093137531A TW 93137531 A TW93137531 A TW 93137531A TW 200540866 A TW200540866 A TW 200540866A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- interconnect
- random access
- access memory
- semiconductor device
- Prior art date
Links
- 239000002184 metal Substances 0.000 claims abstract description 183
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 10
- 230000006870 function Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 2
- 241000283690 Bos taurus Species 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 50
- 230000001939 inductive effect Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/730,239 US7031183B2 (en) | 2003-12-08 | 2003-12-08 | MRAM device integrated with other types of circuitry |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200540866A true TW200540866A (en) | 2005-12-16 |
Family
ID=34634115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093137531A TW200540866A (en) | 2003-12-08 | 2004-12-03 | Mram device integrated with other types of circuitry |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7031183B2 (https=) |
| JP (1) | JP2007525022A (https=) |
| KR (1) | KR20060121146A (https=) |
| CN (1) | CN101133301A (https=) |
| TW (1) | TW200540866A (https=) |
| WO (1) | WO2005060439A2 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006120824A (ja) * | 2004-10-21 | 2006-05-11 | Renesas Technology Corp | 磁気記憶装置 |
| JP2008235677A (ja) * | 2007-03-22 | 2008-10-02 | Matsushita Electric Ind Co Ltd | 半導体集積回路及び入出力セルの信号端子設計方法 |
| US7629182B2 (en) * | 2007-04-17 | 2009-12-08 | Freescale Semiconductor, Inc. | Space and process efficient MRAM and method |
| US8248840B2 (en) * | 2010-03-26 | 2012-08-21 | Qualcomm Incorporated | Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements |
| KR101111431B1 (ko) * | 2010-08-17 | 2012-02-16 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 및 이의 제조 방법 |
| CN102376737B (zh) * | 2010-08-24 | 2014-03-19 | 中芯国际集成电路制造(北京)有限公司 | 嵌入mram的集成电路及该集成电路的制备方法 |
| US10109674B2 (en) | 2015-08-10 | 2018-10-23 | Qualcomm Incorporated | Semiconductor metallization structure |
| CN111742366B (zh) * | 2018-06-14 | 2022-08-26 | 华为技术有限公司 | 存储器 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3515363B2 (ja) * | 1998-03-24 | 2004-04-05 | 株式会社東芝 | 半導体装置の製造方法 |
| US5940319A (en) * | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
| US6055178A (en) * | 1998-12-18 | 2000-04-25 | Motorola, Inc. | Magnetic random access memory with a reference memory array |
| US6153443A (en) * | 1998-12-21 | 2000-11-28 | Motorola, Inc. | Method of fabricating a magnetic random access memory |
| US6165803A (en) * | 1999-05-17 | 2000-12-26 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
| US6292389B1 (en) * | 1999-07-19 | 2001-09-18 | Motorola, Inc. | Magnetic element with improved field response and fabricating method thereof |
| US6233172B1 (en) * | 1999-12-17 | 2001-05-15 | Motorola, Inc. | Magnetic element with dual magnetic states and fabrication method thereof |
| US6418046B1 (en) * | 2001-01-30 | 2002-07-09 | Motorola, Inc. | MRAM architecture and system |
| JP2002368196A (ja) * | 2001-05-30 | 2002-12-20 | Internatl Business Mach Corp <Ibm> | メモリセル、記憶回路ブロック、データの書き込み方法及びデータの読み出し方法 |
| JP2002368197A (ja) * | 2001-05-31 | 2002-12-20 | Internatl Business Mach Corp <Ibm> | 不揮発性磁気メモリ・セル及びそれを用いた記憶回路ブロック |
| JP2003151260A (ja) * | 2001-11-13 | 2003-05-23 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
| JP2003243631A (ja) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム |
| US6518071B1 (en) * | 2002-03-28 | 2003-02-11 | Motorola, Inc. | Magnetoresistive random access memory device and method of fabrication thereof |
| US6906361B2 (en) * | 2002-04-08 | 2005-06-14 | Guobiao Zhang | Peripheral circuits of electrically programmable three-dimensional memory |
-
2003
- 2003-12-08 US US10/730,239 patent/US7031183B2/en not_active Expired - Lifetime
-
2004
- 2004-10-29 CN CNA2004800362736A patent/CN101133301A/zh active Pending
- 2004-10-29 JP JP2006543814A patent/JP2007525022A/ja active Pending
- 2004-10-29 WO PCT/US2004/036290 patent/WO2005060439A2/en not_active Ceased
- 2004-10-29 KR KR1020067011250A patent/KR20060121146A/ko not_active Ceased
- 2004-12-03 TW TW093137531A patent/TW200540866A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007525022A (ja) | 2007-08-30 |
| KR20060121146A (ko) | 2006-11-28 |
| CN101133301A (zh) | 2008-02-27 |
| US7031183B2 (en) | 2006-04-18 |
| WO2005060439A3 (en) | 2007-05-24 |
| WO2005060439A2 (en) | 2005-07-07 |
| US20050122772A1 (en) | 2005-06-09 |
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