JP2007525022A - 他の種類の回路と共に集積されたｍｒａｍ装置 - Google Patents

他の種類の回路と共に集積されたｍｒａｍ装置 Download PDF

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Publication number
JP2007525022A
JP2007525022A JP2006543814A JP2006543814A JP2007525022A JP 2007525022 A JP2007525022 A JP 2007525022A JP 2006543814 A JP2006543814 A JP 2006543814A JP 2006543814 A JP2006543814 A JP 2006543814A JP 2007525022 A JP2007525022 A JP 2007525022A
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JP
Japan
Prior art keywords
metal layer
metal
semiconductor device
substrate
mram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006543814A
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English (en)
Japanese (ja)
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JP2007525022A5 (https=
Inventor
ジェイ． カースザイコフスキー、グロリア
シン チャン、リ
エイ． ダーラム、マーク
ティ． リーン、ミッチェル
ブイ． マイクスナー、トマス
ジェイ． ワイズ、ローレン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2007525022A publication Critical patent/JP2007525022A/ja
Publication of JP2007525022A5 publication Critical patent/JP2007525022A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2006543814A 2003-12-08 2004-10-29 他の種類の回路と共に集積されたｍｒａｍ装置 Pending JP2007525022A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/730,239 US7031183B2 (en) 2003-12-08 2003-12-08 MRAM device integrated with other types of circuitry
PCT/US2004/036290 WO2005060439A2 (en) 2003-12-08 2004-10-29 Mram device integreated with other circuitry

Publications (2)

Publication Number Publication Date
JP2007525022A true JP2007525022A (ja) 2007-08-30
JP2007525022A5 JP2007525022A5 (https=) 2007-12-13

Family

ID=34634115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006543814A Pending JP2007525022A (ja) 2003-12-08 2004-10-29 他の種類の回路と共に集積されたｍｒａｍ装置

Country Status (6)

Country Link
US (1) US7031183B2 (https=)
JP (1) JP2007525022A (https=)
KR (1) KR20060121146A (https=)
CN (1) CN101133301A (https=)
TW (1) TW200540866A (https=)
WO (1) WO2005060439A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120824A (ja) * 2004-10-21 2006-05-11 Renesas Technology Corp 磁気記憶装置
JP2008235677A (ja) * 2007-03-22 2008-10-02 Matsushita Electric Ind Co Ltd 半導体集積回路及び入出力セルの信号端子設計方法
US7629182B2 (en) * 2007-04-17 2009-12-08 Freescale Semiconductor, Inc. Space and process efficient MRAM and method
US8248840B2 (en) * 2010-03-26 2012-08-21 Qualcomm Incorporated Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements
KR101111431B1 (ko) * 2010-08-17 2012-02-16 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 이의 제조 방법
CN102376737B (zh) * 2010-08-24 2014-03-19 中芯国际集成电路制造(北京)有限公司 嵌入mram的集成电路及该集成电路的制备方法
US10109674B2 (en) 2015-08-10 2018-10-23 Qualcomm Incorporated Semiconductor metallization structure
CN111742366B (zh) * 2018-06-14 2022-08-26 华为技术有限公司 存储器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274154A (ja) * 1998-03-24 1999-10-08 Toshiba Corp 半導体装置およびその製造方法
JP2002368197A (ja) * 2001-05-31 2002-12-20 Internatl Business Mach Corp <Ibm> 不揮発性磁気メモリ・セル及びそれを用いた記憶回路ブロック
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
US6153443A (en) * 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
US6165803A (en) * 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6292389B1 (en) * 1999-07-19 2001-09-18 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
US6233172B1 (en) * 1999-12-17 2001-05-15 Motorola, Inc. Magnetic element with dual magnetic states and fabrication method thereof
US6418046B1 (en) * 2001-01-30 2002-07-09 Motorola, Inc. MRAM architecture and system
JP2002368196A (ja) * 2001-05-30 2002-12-20 Internatl Business Mach Corp <Ibm> メモリセル、記憶回路ブロック、データの書き込み方法及びデータの読み出し方法
JP2003151260A (ja) * 2001-11-13 2003-05-23 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6518071B1 (en) * 2002-03-28 2003-02-11 Motorola, Inc. Magnetoresistive random access memory device and method of fabrication thereof
US6906361B2 (en) * 2002-04-08 2005-06-14 Guobiao Zhang Peripheral circuits of electrically programmable three-dimensional memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274154A (ja) * 1998-03-24 1999-10-08 Toshiba Corp 半導体装置およびその製造方法
JP2002368197A (ja) * 2001-05-31 2002-12-20 Internatl Business Mach Corp <Ibm> 不揮発性磁気メモリ・セル及びそれを用いた記憶回路ブロック
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム

Also Published As

Publication number Publication date
KR20060121146A (ko) 2006-11-28
CN101133301A (zh) 2008-02-27
TW200540866A (en) 2005-12-16
US7031183B2 (en) 2006-04-18
WO2005060439A3 (en) 2007-05-24
WO2005060439A2 (en) 2005-07-07
US20050122772A1 (en) 2005-06-09

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