TW200538491A - The composition of forming insulating film and the method of producing insulating film - Google Patents

The composition of forming insulating film and the method of producing insulating film Download PDF

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Publication number
TW200538491A
TW200538491A TW94101154A TW94101154A TW200538491A TW 200538491 A TW200538491 A TW 200538491A TW 94101154 A TW94101154 A TW 94101154A TW 94101154 A TW94101154 A TW 94101154A TW 200538491 A TW200538491 A TW 200538491A
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TW
Taiwan
Prior art keywords
group
insulating film
forming
composition
component
Prior art date
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TW94101154A
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English (en)
Chinese (zh)
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TWI316524B (https=
Inventor
Hisashi Nakagawa
Masahiro Akiyama
Takahiko Kurosawa
Atsushi Shiota
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Jsr Corp
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Publication of TW200538491A publication Critical patent/TW200538491A/zh
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Publication of TWI316524B publication Critical patent/TWI316524B/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/20—Manufacture of shaped structures of ion-exchange resins
    • C08J5/22—Films, membranes or diaphragms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C08G77/08—Preparatory processes characterised by the catalysts used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW94101154A 2004-01-16 2005-01-14 The composition of forming insulating film and the method of producing insulating film TW200538491A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004009205 2004-01-16
JP2004141200 2004-05-11

Publications (2)

Publication Number Publication Date
TW200538491A true TW200538491A (en) 2005-12-01
TWI316524B TWI316524B (https=) 2009-11-01

Family

ID=34797750

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94101154A TW200538491A (en) 2004-01-16 2005-01-14 The composition of forming insulating film and the method of producing insulating film

Country Status (6)

Country Link
US (1) US7875317B2 (https=)
EP (1) EP1705208B1 (https=)
JP (1) JP5105041B2 (https=)
KR (1) KR101185644B1 (https=)
TW (1) TW200538491A (https=)
WO (2) WO2005068541A1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3951124B2 (ja) * 2002-12-06 2007-08-01 Ｊｓｒ株式会社 絶縁膜
US8656039B2 (en) * 2003-12-10 2014-02-18 Mcafee, Inc. Rule parser
WO2005068538A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜
EP1719793A4 (en) * 2004-02-26 2009-05-20 Jsr Corp POLYMER AND MANUFACTURING METHOD THEREFOR, COMPOSITION FOR FORMING AN INSULATING FILM AND PRODUCTION METHOD THEREFOR
JP5110239B2 (ja) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
EP1746123A4 (en) * 2004-05-11 2012-03-21 Jsr Corp METHOD FOR FORMING A FILM FROM ORGANIC SILICON OXIDE, ORGANIC SILICON OXIDE FILM, WIRE STRUCTURE, SEMICONDUCTOR DEVICE AND COMPOSITION FOR FILMING
JP5110238B2 (ja) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
JP2007045966A (ja) * 2005-08-11 2007-02-22 Fujifilm Corp 絶縁膜形成用組成物、絶縁膜、およびその製造方法
JP2007070480A (ja) * 2005-09-07 2007-03-22 Fujifilm Corp 膜形成用組成物、絶縁膜およびその製造方法
EP1981074B1 (en) * 2006-02-02 2011-06-22 JSR Corporation Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device
WO2008020592A1 (en) * 2006-08-15 2008-02-21 Jsr Corporation Film-forming material, silicon-containing insulating film and method for forming the same
WO2008066060A1 (en) * 2006-11-30 2008-06-05 Jsr Corporation Method for producing polymer, composition for forming insulating film, and silica insulating film and method for producing the same
KR20090119903A (ko) * 2007-02-14 2009-11-20 제이에스알 가부시끼가이샤 규소 함유 막 형성용 재료, 및 규소 함유 절연막 및 그의 형성 방법
WO2009008041A1 (ja) * 2007-07-06 2009-01-15 Fujitsu Limited 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
US20100261925A1 (en) * 2007-07-10 2010-10-14 Jsr Corporation Method for producing silicon compound
US20090081598A1 (en) 2007-09-24 2009-03-26 International Business Machines Corporation Functionalized carbosilane polymers and photoresist compositions containing the same
US20090081579A1 (en) * 2007-09-24 2009-03-26 International Business Machines Corporation Functionalized carbosilane polymers and photoresist compositions containing the same
JPWO2009119583A1 (ja) * 2008-03-26 2011-07-28 Jsr株式会社 化学気相成長法用材料ならびにケイ素含有絶縁膜およびその製造方法
JP5365785B2 (ja) * 2008-05-30 2013-12-11 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
KR100968803B1 (ko) * 2008-06-24 2010-07-08 주식회사 티씨케이 폴리카르보실란 및 그 제조방법
JP5376118B2 (ja) * 2008-10-29 2013-12-25 Ｊｓｒ株式会社 絶縁膜形成用組成物の製造方法、ならびに絶縁膜の形成方法
JP4379637B1 (ja) 2009-03-30 2009-12-09 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
WO2014043644A1 (en) 2012-09-17 2014-03-20 Alltech Associates, Inc. Functionalized particulate support material and methods of making and using the same
RU2015114330A (ru) 2012-09-17 2016-11-10 У.Р. Грейс Энд Ко.-Конн. Хроматографические среды и устройства
WO2014078665A1 (en) * 2012-11-15 2014-05-22 Elantas Pdg, Inc. Composite insulating film
CN105722931A (zh) * 2013-10-01 2016-06-29 塔塔钢铁有限公司 用于处理镀锌层退火或镀锌的钢表面的无铬水基涂料
US11229896B2 (en) 2014-01-16 2022-01-25 W.R. Grace & Co.—Conn. Affinity chromatography media and chromatography devices
JP6914189B2 (ja) 2014-05-02 2021-08-04 ダブリュー・アール・グレース・アンド・カンパニー−コーンＷ Ｒ Ｇｒａｃｅ ＆ Ｃｏ−Ｃｏｎｎ 官能化担体材料並びに官能化担体材料を作製及び使用する方法
CN107921407B (zh) 2015-06-05 2022-07-05 格雷斯公司 生物处理吸附澄清剂及其制备和使用方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248903B2 (https=) * 1974-06-19 1977-12-13
GB2009196B (en) 1977-10-26 1982-04-15 Res Inst For Special Inorganic Polycarbosilane process for its prudiction and its use as material for producing silicon carbide
JPS5461299A (en) * 1977-10-26 1979-05-17 Tokushiyu Muki Zairiyou Kenkiy Polycarbosilane partially containing siloxane linkage and method of making same
JPS6169836A (ja) * 1984-09-12 1986-04-10 Chisso Corp けい素含有ステツプラダ−ポリマ−及びその製造方法
JPH04100873A (ja) * 1990-08-21 1992-04-02 Ube Ind Ltd 耐熱性塗料
JP3296440B2 (ja) * 1991-10-17 2002-07-02 鐘淵化学工業株式会社 ケイ素系ハイブリッド材料
JP3320440B2 (ja) 1992-03-17 2002-09-03 触媒化成工業株式会社 被膜形成用塗布液およびその製造方法
JP3073313B2 (ja) 1992-05-12 2000-08-07 触媒化成工業株式会社 半導体装置およびその製造方法
JPH08217879A (ja) * 1995-02-15 1996-08-27 Mitsubishi Rayon Co Ltd 耐熱性樹脂およびその製造方法
US6652922B1 (en) * 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
DE19810803A1 (de) * 1998-03-12 1999-09-16 Wacker Chemie Gmbh Verfahren zur Herstellung mikroverkapselter Produkte mit Organopolysiloxanwänden
JPH11340220A (ja) 1998-05-26 1999-12-10 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用塗布液及びその製造方法
JP4473352B2 (ja) 1998-05-26 2010-06-02 東京応化工業株式会社 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法
JP4305587B2 (ja) * 1999-04-27 2009-07-29 Ｊｓｒ株式会社 半導体装置用の層間絶縁膜形成用材料
JP2000336169A (ja) * 1999-05-26 2000-12-05 Dow Corning Asia Ltd 架橋されたポリシリレンメチレンおよび架橋されたポリシリレンメチレン組成物の製造方法
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
JP4756526B2 (ja) * 1999-10-25 2011-08-24 富士通株式会社 多孔質化低誘電率絶縁膜の形成方法及び該方法で形成された多孔質化低誘電率絶縁膜及び該多孔質化低誘電率絶縁膜を用いた半導体装置
JP3941327B2 (ja) * 2000-02-01 2007-07-04 Ｊｓｒ株式会社 シリカ系膜の製造方法、シリカ系膜、絶縁膜および半導体装置
JP3604007B2 (ja) * 2000-03-29 2004-12-22 富士通株式会社 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法
US7128976B2 (en) * 2000-04-10 2006-10-31 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
JP4117436B2 (ja) * 2000-04-10 2008-07-16 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法およびシリカ系膜
DE10041417A1 (de) 2000-08-23 2002-03-21 Beru Ag Elektronische Ansteuerung für Heizelemente
JP4100873B2 (ja) * 2001-02-23 2008-06-11 株式会社クボタ 汚水処理装置
JP4545973B2 (ja) * 2001-03-23 2010-09-15 富士通株式会社 シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
KR100451044B1 (ko) * 2001-06-07 2004-10-02 주식회사 엘지화학 유기실리케이트 중합체의 제조방법, 및 이를 이용한절연막의 제조방법
JP2003115482A (ja) * 2001-10-05 2003-04-18 Asahi Kasei Corp 絶縁膜形成用組成物
JP3797260B2 (ja) * 2002-03-29 2006-07-12 Ｊｓｒ株式会社 半導体装置用カルボシラン系膜の製造方法、および半導体装置用カルボシラン系絶縁膜
JPWO2003087228A1 (ja) * 2002-04-12 2005-08-18 Ａｚエレクトロニックマテリアルズ株式会社 ケイ素含有共重合ポリマー組成物、溶剤可溶性架橋ケイ素含有共重合ポリマー及びこれらの硬化物
US6844568B2 (en) * 2002-04-25 2005-01-18 Kyocera Corporation Photoelectric conversion device and manufacturing process thereof
US6809041B2 (en) * 2002-07-01 2004-10-26 Rensselaer Polytechnic Institute Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane
KR20050024721A (ko) * 2003-09-01 2005-03-11 삼성전자주식회사 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막
US7462678B2 (en) 2003-09-25 2008-12-09 Jsr Corporation Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
JP4737361B2 (ja) 2003-12-19 2011-07-27 Ｊｓｒ株式会社 絶縁膜およびその形成方法
WO2005068538A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜
JP5110238B2 (ja) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
EP1615260A3 (en) 2004-07-09 2009-09-16 JSR Corporation Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device
JP4355939B2 (ja) 2004-07-23 2009-11-04 Ｊｓｒ株式会社 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法

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EP1705208A4 (en) 2012-03-28
WO2005068541A1 (ja) 2005-07-28
KR101185644B1 (ko) 2012-09-24
KR20060123547A (ko) 2006-12-01
JP5105041B2 (ja) 2012-12-19
WO2005068540A1 (ja) 2005-07-28
TWI316524B (https=) 2009-11-01
JPWO2005068540A1 (ja) 2007-12-27

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