TW200514117A - Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment - Google Patents

Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment

Info

Publication number
TW200514117A
TW200514117A TW093125524A TW93125524A TW200514117A TW 200514117 A TW200514117 A TW 200514117A TW 093125524 A TW093125524 A TW 093125524A TW 93125524 A TW93125524 A TW 93125524A TW 200514117 A TW200514117 A TW 200514117A
Authority
TW
Taiwan
Prior art keywords
solution
impurity
procedure
inducted
sulfuric acid
Prior art date
Application number
TW093125524A
Other languages
English (en)
Chinese (zh)
Other versions
TWI351708B (https=
Inventor
Yuichiro Sasaki
Katsumi Okashita
Bunji Mizuno
Hiroyuki Ito
Cheng-Guo Jin
Hideki Tamura
Ichiro Nakayama
Tomohiro Okumura
Satoshi Maeshima
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of TW200514117A publication Critical patent/TW200514117A/zh
Application granted granted Critical
Publication of TWI351708B publication Critical patent/TWI351708B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
TW093125524A 2003-08-25 2004-08-26 Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment TW200514117A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003299596 2003-08-25

Publications (2)

Publication Number Publication Date
TW200514117A true TW200514117A (en) 2005-04-16
TWI351708B TWI351708B (https=) 2011-11-01

Family

ID=34213768

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125524A TW200514117A (en) 2003-08-25 2004-08-26 Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment

Country Status (5)

Country Link
US (1) US7759254B2 (https=)
JP (1) JP4619951B2 (https=)
CN (1) CN100437912C (https=)
TW (1) TW200514117A (https=)
WO (1) WO2005020306A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385718B (zh) * 2005-05-12 2013-02-11 松下電器產業股份有限公司 Plasma doping method

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396745B2 (en) * 2004-12-03 2008-07-08 Tel Epion Inc. Formation of ultra-shallow junctions by gas-cluster ion irradiation
TW200423185A (en) * 2003-02-19 2004-11-01 Matsushita Electric Industrial Co Ltd Method of introducing impurity
US7759254B2 (en) 2003-08-25 2010-07-20 Panasonic Corporation Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
TW200520063A (en) * 2003-10-09 2005-06-16 Matsushita Electric Industrial Co Ltd Junction-forming method and object to be processed and formed by using the same
CN1965391A (zh) * 2004-05-14 2007-05-16 松下电器产业株式会社 制造半导体器件的方法和设备
CN1993806A (zh) * 2004-06-04 2007-07-04 松下电器产业株式会社 引入杂质的方法
CN100472739C (zh) * 2004-11-08 2009-03-25 Tel艾派恩有限公司 铜互连布线和形成铜互连布线的方法
US7799683B2 (en) * 2004-11-08 2010-09-21 Tel Epion, Inc. Copper interconnect wiring and method and apparatus for forming thereof
DE602005025015D1 (de) 2004-12-13 2011-01-05 Panasonic Corp Plasma-dotierungsverfahren
SG163544A1 (en) 2005-03-30 2010-08-30 Panasonic Corp Impurity introducing apparatus and impurity introducing method
KR20070115907A (ko) * 2005-03-31 2007-12-06 마쯔시다덴기산교 가부시키가이샤 플라즈마 도핑 방법 및 장치
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
CN103170447B (zh) * 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
KR100769833B1 (ko) * 2006-08-14 2007-10-23 동부일렉트로닉스 주식회사 반도체 소자 제조 방법
JP5134223B2 (ja) * 2006-09-06 2013-01-30 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR100843968B1 (ko) * 2007-05-16 2008-07-03 주식회사 동부하이텍 이미지센서의 제조방법
US8063437B2 (en) * 2007-07-27 2011-11-22 Panasonic Corporation Semiconductor device and method for producing the same
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
WO2009034699A1 (ja) * 2007-09-10 2009-03-19 Panasonic Corporation 半導体装置の製造方法
CN101393843B (zh) * 2007-09-20 2010-06-09 中芯国际集成电路制造(上海)有限公司 离子注入后的清洗方法
CN101459038B (zh) * 2007-12-13 2010-08-11 中芯国际集成电路制造(上海)有限公司 半导体基底清洗方法
US8030187B2 (en) * 2007-12-28 2011-10-04 Panasonic Corporation Method for manufacturing semiconductor device
US8741071B2 (en) * 2008-01-09 2014-06-03 Freescale Semiconductor, Inc. Semiconductor processing method
CN101592875B (zh) * 2008-05-29 2012-02-29 中芯国际集成电路制造(北京)有限公司 清洗方法及清洗机台
US7927986B2 (en) * 2008-07-22 2011-04-19 Varian Semiconductor Equipment Associates, Inc. Ion implantation with heavy halogenide compounds
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) * 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8223539B2 (en) * 2010-01-26 2012-07-17 Micron Technology, Inc. GCIB-treated resistive device
TWI386983B (zh) 2010-02-26 2013-02-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
JP5826524B2 (ja) * 2010-07-16 2015-12-02 住友重機械工業株式会社 プラズマドーピング装置及びプラズマドーピング方法
CN101943868B (zh) * 2010-08-03 2012-12-19 无锡科硅电子技术有限公司 去除光刻胶的方法与装置
WO2012030679A2 (en) 2010-08-30 2012-03-08 Advanced Technology Materials, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
CN102540775A (zh) * 2010-12-27 2012-07-04 无锡华润上华科技有限公司 硅化物保护层去胶方法
JP2012234960A (ja) * 2011-04-28 2012-11-29 Ulvac Japan Ltd 半導体デバイスおよび半導体デバイスの製造方法
JP5583076B2 (ja) * 2011-06-02 2014-09-03 住友重機械工業株式会社 プラズマ処理装置
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
JP5661597B2 (ja) * 2011-11-14 2015-01-28 東京エレクトロン株式会社 基板保持体の再生方法
EP3267470A3 (en) 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
CN103311093B (zh) * 2012-03-12 2016-06-08 上海凯世通半导体有限公司 Pn结构的掺杂方法
US9224644B2 (en) 2012-12-26 2015-12-29 Intermolecular, Inc. Method to control depth profiles of dopants using a remote plasma source
US9145303B2 (en) * 2013-02-15 2015-09-29 Ecolive Technologies LTD. Chemical vapor deposition reactor having ceramic lining for production of polysilicon
CN104252103A (zh) * 2013-06-25 2014-12-31 无锡华润上华科技有限公司 光刻返工后残留光刻胶的去除方法
WO2015023903A1 (en) 2013-08-16 2015-02-19 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
JP6107709B2 (ja) * 2014-03-10 2017-04-05 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP6036732B2 (ja) * 2014-03-18 2016-11-30 信越半導体株式会社 貼り合わせウェーハの製造方法
CN103996617A (zh) * 2014-06-09 2014-08-20 上海华力微电子有限公司 离子注入工艺后的光刻胶层的去除方法
US9425063B2 (en) * 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device
US10249498B2 (en) * 2015-06-19 2019-04-02 Tokyo Electron Limited Method for using heated substrates for process chemistry control
US20170170018A1 (en) * 2015-12-14 2017-06-15 Lam Research Corporation Conformal doping using dopant gas on hydrogen plasma treated surface
US9911660B2 (en) 2016-04-26 2018-03-06 Lam Research Corporation Methods for forming germanium and silicon germanium nanowire devices
US10522656B2 (en) * 2018-02-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Forming epitaxial structures in fin field effect transistors
JP7117354B2 (ja) * 2020-09-14 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、およびプログラム
US12020992B2 (en) 2022-01-26 2024-06-25 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN121335179B (zh) * 2025-12-10 2026-03-20 合肥晶合集成电路股份有限公司 半导体器件及其制造方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897863A (ja) 1981-12-07 1983-06-10 Toshiba Corp 半導体装置の製造方法
JP2782357B2 (ja) 1989-05-10 1998-07-30 ヤマハ株式会社 イオン注入方法
JP2780419B2 (ja) 1990-03-05 1998-07-30 松下電器産業株式会社 不純物の導入装置及びその導入方法
JPH05206053A (ja) 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd 結晶損傷除去装置
JPH05206045A (ja) 1992-01-27 1993-08-13 Hitachi Ltd 半導体装置の製造方法
JP3173854B2 (ja) * 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置
JPH05314944A (ja) 1992-05-11 1993-11-26 Fujitsu Ltd イオン照射装置及びイオン照射方法
JP2530990B2 (ja) 1992-10-15 1996-09-04 富士通株式会社 薄膜トランジスタ・マトリクスの製造方法
JP3219501B2 (ja) 1992-12-01 2001-10-15 松下電器産業株式会社 薄膜トランジスタの製造方法
US5738731A (en) 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
JP2919254B2 (ja) 1993-11-22 1999-07-12 日本電気株式会社 半導体装置の製造方法および形成装置
KR100319332B1 (ko) * 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
US5620906A (en) * 1994-02-28 1997-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device by introducing hydrogen ions
US5897346A (en) 1994-02-28 1999-04-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing a thin film transistor
JPH08213339A (ja) 1995-02-02 1996-08-20 Hitachi Ltd イオン注入方法およびその装置
US5956581A (en) 1995-04-20 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JPH0917867A (ja) 1995-06-30 1997-01-17 Nkk Corp 半導体装置におけるコンタクト部の形成方法
JP3080867B2 (ja) 1995-09-25 2000-08-28 日本電気株式会社 Ｓｏｉ基板の製造方法
JP3545526B2 (ja) * 1996-01-19 2004-07-21 株式会社東芝 半導体装置の製造方法
US5892235A (en) 1996-05-15 1999-04-06 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for doping
US5908307A (en) 1997-01-31 1999-06-01 Ultratech Stepper, Inc. Fabrication method for reduced-dimension FET devices
JPH1131665A (ja) 1997-07-11 1999-02-02 Hitachi Ltd 半導体集積回路装置の製造方法
JPH1154451A (ja) 1997-08-07 1999-02-26 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
TW388087B (en) 1997-11-20 2000-04-21 Winbond Electronics Corp Method of forming buried-channel P-type metal oxide semiconductor
JPH11274492A (ja) 1998-03-24 1999-10-08 Nippon Foundry Inc 半導体装置及びその製造方法
JP3161413B2 (ja) 1998-05-28 2001-04-25 日本電気株式会社 半導体装置の製造方法
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2000195814A (ja) 1998-12-28 2000-07-14 Fujitsu Ltd 半導体装置の製造方法
US6573195B1 (en) * 1999-01-26 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere
KR100316707B1 (ko) 1999-02-05 2001-12-28 윤종용 모스 트랜지스터 및 그 제조방법
US6436747B1 (en) * 1999-04-21 2002-08-20 Matsushita Electtric Industrial Co., Ltd. Method of fabricating semiconductor device
JP3348070B2 (ja) 1999-04-21 2002-11-20 松下電器産業株式会社 半導体装置の製造方法
JP2000349039A (ja) 1999-06-02 2000-12-15 Nec Corp 浅い拡散層を有する半導体装置の製造方法
US6610168B1 (en) * 1999-08-12 2003-08-26 Sipec Corporation Resist film removal apparatus and resist film removal method
US6438747B1 (en) * 1999-08-20 2002-08-20 Hewlett-Packard Company Programmatic iteration scheduling for parallel processors
EP1264335A1 (en) 2000-03-17 2002-12-11 Varian Semiconductor Equipment Associates Inc. Method of forming ultrashallow junctions by laser annealing and rapid thermal annealing
JP4171162B2 (ja) 2000-05-30 2008-10-22 三洋電機株式会社 光起電力素子およびその製造方法
JP4785335B2 (ja) * 2001-02-21 2011-10-05 三菱電機株式会社 半導体装置およびその製造方法
US6720241B2 (en) 2001-06-18 2004-04-13 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor device
JP2003077856A (ja) 2001-06-18 2003-03-14 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US7615473B2 (en) * 2002-01-17 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method of introducing ion and method of manufacturing semiconductor device
US6713819B1 (en) 2002-04-08 2004-03-30 Advanced Micro Devices, Inc. SOI MOSFET having amorphized source drain and method of fabrication
US7135423B2 (en) 2002-05-09 2006-11-14 Varian Semiconductor Equipment Associates, Inc Methods for forming low resistivity, ultrashallow junctions with low damage
US7122408B2 (en) * 2003-06-16 2006-10-17 Micron Technology, Inc. Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
US7759254B2 (en) 2003-08-25 2010-07-20 Panasonic Corporation Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
US7501332B2 (en) 2004-04-05 2009-03-10 Kabushiki Kaisha Toshiba Doping method and manufacturing method for a semiconductor device
US20060205192A1 (en) 2005-03-09 2006-09-14 Varian Semiconductor Equipment Associates, Inc. Shallow-junction fabrication in semiconductor devices via plasma implantation and deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385718B (zh) * 2005-05-12 2013-02-11 松下電器產業股份有限公司 Plasma doping method

Also Published As

Publication number Publication date
WO2005020306A1 (ja) 2005-03-03
JPWO2005020306A1 (ja) 2006-10-19
CN100437912C (zh) 2008-11-26
TWI351708B (https=) 2011-11-01
US7759254B2 (en) 2010-07-20
US20060264051A1 (en) 2006-11-23
JP4619951B2 (ja) 2011-01-26
CN1842896A (zh) 2006-10-04

Similar Documents

Publication Publication Date Title
TW200514117A (en) Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment
JP3789083B2 (ja) 洗浄溶液を用いた集積回路基板の汚染物質の除去方法
EP2235757B1 (en) Process for the manufacture of solar cells
TWI263676B (en) Compositions for chemically treating a substrate using foam technology
ATE557418T1 (de) Verfahren zum ätzen von merkmalen mit hohem streckungsverhältnis
TW200725197A (en) Apparatus and methods for mask cleaning
TW200618101A (en) Etching solution and method for removing low-k dielectric layer
TW200604369A (en) Method for removing carbon-containing residues from a substrate
WO2008146834A1 (ja) レジスト除去方法、半導体製造方法、及びレジスト除去装置
WO2005013002A3 (en) Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing
TWI376721B (en) System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
TW200834662A (en) Wet photoresist stripping process and apparatus
WO2012018375A3 (en) Plasma mediated ashing processes
HRP20181045T1 (hr) Postupak jetkanja elektročelika koji sadrži silicij kiselom otopinom za jetkanje koja sadrži feri ione
TW200502425A (en) Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
TW200943412A (en) Method of manufacturing a semiconductor device and a device for treating substrate
WO2004077502A3 (en) Ecr-plasma source and methods for treatment of semiconductor structures
ATE472172T1 (de) Verfahren zur herstellung einer silizium- elektrode für plasma-reaktionskammer
CN105931947A (zh) 一种硅片的清洗方法
TW200620460A (en) Method of manufacturing a semiconductor device, and a semiconductor substrate
AU2003276094A1 (en) Semiconductor surface treatment and mixture used therein
JP2000286248A (ja) イオン注入されたホトレジストの残渣の処理方法及び半導体装置の製造方法
EP1562226B1 (en) A method for removing oxides from a Germanium semiconductor substrate surface
CN101101457B (zh) 移除光刻胶的方法
RU2319252C2 (ru) Способ очистки поверхности кремниевых подложек

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees