CN100437912C - 杂质导入层的形成方法和器件的制造方法 - Google Patents

杂质导入层的形成方法和器件的制造方法 Download PDF

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Publication number
CN100437912C
CN100437912C CNB200480024667XA CN200480024667A CN100437912C CN 100437912 C CN100437912 C CN 100437912C CN B200480024667X A CNB200480024667X A CN B200480024667XA CN 200480024667 A CN200480024667 A CN 200480024667A CN 100437912 C CN100437912 C CN 100437912C
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China
Prior art keywords
impurity
plasma
resist
plasma doping
silicon substrate
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Expired - Fee Related
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Chinese (zh)
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CN1842896A (zh
Inventor
佐佐木雄一朗
冈下胜己
水野文二
伊藤裕之
金成国
田村秀贵
中山一郎
奥村智洋
前嶋聪
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
CNB200480024667XA 2003-08-25 2004-08-25 杂质导入层的形成方法和器件的制造方法 Expired - Fee Related CN100437912C (zh)

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JP299596/2003 2003-08-25
JP2003299596 2003-08-25

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CN1842896A CN1842896A (zh) 2006-10-04
CN100437912C true CN100437912C (zh) 2008-11-26

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US (1) US7759254B2 (https=)
JP (1) JP4619951B2 (https=)
CN (1) CN100437912C (https=)
TW (1) TW200514117A (https=)
WO (1) WO2005020306A1 (https=)

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Also Published As

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WO2005020306A1 (ja) 2005-03-03
JPWO2005020306A1 (ja) 2006-10-19
TWI351708B (https=) 2011-11-01
US7759254B2 (en) 2010-07-20
US20060264051A1 (en) 2006-11-23
JP4619951B2 (ja) 2011-01-26
CN1842896A (zh) 2006-10-04
TW200514117A (en) 2005-04-16

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