JP4619951B2 - 不純物導入層の形成方法 - Google Patents

不純物導入層の形成方法 Download PDF

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Publication number
JP4619951B2
JP4619951B2 JP2005513389A JP2005513389A JP4619951B2 JP 4619951 B2 JP4619951 B2 JP 4619951B2 JP 2005513389 A JP2005513389 A JP 2005513389A JP 2005513389 A JP2005513389 A JP 2005513389A JP 4619951 B2 JP4619951 B2 JP 4619951B2
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Japan
Prior art keywords
silicon substrate
plasma
gas
boron
cleaning
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Expired - Fee Related
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JP2005513389A
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English (en)
Japanese (ja)
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JPWO2005020306A1 (ja
Inventor
雄一朗 佐々木
勝己 岡下
文二 水野
裕之 伊藤
成国 金
秀貴 田村
一郎 中山
智洋 奥村
聡 前嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Publication of JPWO2005020306A1 publication Critical patent/JPWO2005020306A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
JP2005513389A 2003-08-25 2004-08-25 不純物導入層の形成方法 Expired - Fee Related JP4619951B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003299596 2003-08-25
JP2003299596 2003-08-25
PCT/JP2004/012583 WO2005020306A1 (ja) 2003-08-25 2004-08-25 不純物導入層の形成方法及び被処理物の洗浄方法並びに不純物導入装置及びデバイスの製造方法

Publications (2)

Publication Number Publication Date
JPWO2005020306A1 JPWO2005020306A1 (ja) 2006-10-19
JP4619951B2 true JP4619951B2 (ja) 2011-01-26

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JP2005513389A Expired - Fee Related JP4619951B2 (ja) 2003-08-25 2004-08-25 不純物導入層の形成方法

Country Status (5)

Country Link
US (1) US7759254B2 (https=)
JP (1) JP4619951B2 (https=)
CN (1) CN100437912C (https=)
TW (1) TW200514117A (https=)
WO (1) WO2005020306A1 (https=)

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US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
CN103170447B (zh) * 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
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CN101459038B (zh) * 2007-12-13 2010-08-11 中芯国际集成电路制造(上海)有限公司 半导体基底清洗方法
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CN101943868B (zh) * 2010-08-03 2012-12-19 无锡科硅电子技术有限公司 去除光刻胶的方法与装置
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CN102540775A (zh) * 2010-12-27 2012-07-04 无锡华润上华科技有限公司 硅化物保护层去胶方法
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JP5583076B2 (ja) * 2011-06-02 2014-09-03 住友重機械工業株式会社 プラズマ処理装置
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
JP5661597B2 (ja) * 2011-11-14 2015-01-28 東京エレクトロン株式会社 基板保持体の再生方法
EP3267470A3 (en) 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
CN103311093B (zh) * 2012-03-12 2016-06-08 上海凯世通半导体有限公司 Pn结构的掺杂方法
US9224644B2 (en) 2012-12-26 2015-12-29 Intermolecular, Inc. Method to control depth profiles of dopants using a remote plasma source
US9145303B2 (en) * 2013-02-15 2015-09-29 Ecolive Technologies LTD. Chemical vapor deposition reactor having ceramic lining for production of polysilicon
CN104252103A (zh) * 2013-06-25 2014-12-31 无锡华润上华科技有限公司 光刻返工后残留光刻胶的去除方法
WO2015023903A1 (en) 2013-08-16 2015-02-19 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
JP6107709B2 (ja) * 2014-03-10 2017-04-05 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP6036732B2 (ja) * 2014-03-18 2016-11-30 信越半導体株式会社 貼り合わせウェーハの製造方法
CN103996617A (zh) * 2014-06-09 2014-08-20 上海华力微电子有限公司 离子注入工艺后的光刻胶层的去除方法
US9425063B2 (en) * 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device
US10249498B2 (en) * 2015-06-19 2019-04-02 Tokyo Electron Limited Method for using heated substrates for process chemistry control
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US10522656B2 (en) * 2018-02-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Forming epitaxial structures in fin field effect transistors
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Also Published As

Publication number Publication date
WO2005020306A1 (ja) 2005-03-03
JPWO2005020306A1 (ja) 2006-10-19
CN100437912C (zh) 2008-11-26
TWI351708B (https=) 2011-11-01
US7759254B2 (en) 2010-07-20
US20060264051A1 (en) 2006-11-23
CN1842896A (zh) 2006-10-04
TW200514117A (en) 2005-04-16

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