TW200512791A - Etching method - Google Patents

Etching method

Info

Publication number
TW200512791A
TW200512791A TW093121953A TW93121953A TW200512791A TW 200512791 A TW200512791 A TW 200512791A TW 093121953 A TW093121953 A TW 093121953A TW 93121953 A TW93121953 A TW 93121953A TW 200512791 A TW200512791 A TW 200512791A
Authority
TW
Taiwan
Prior art keywords
pattern width
mask layer
pattern
region
belonging
Prior art date
Application number
TW093121953A
Other languages
English (en)
Other versions
TWI357092B (zh
Inventor
Masato Kushibiki
Masayuki Sawataishi
Akitaka Shimizu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200512791A publication Critical patent/TW200512791A/zh
Application granted granted Critical
Publication of TWI357092B publication Critical patent/TWI357092B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
TW093121953A 2003-09-29 2004-07-22 Etching method TW200512791A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003337373 2003-09-29
JP2004188013A JP4727171B2 (ja) 2003-09-29 2004-06-25 エッチング方法

Publications (2)

Publication Number Publication Date
TW200512791A true TW200512791A (en) 2005-04-01
TWI357092B TWI357092B (zh) 2012-01-21

Family

ID=34380387

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093121953A TW200512791A (en) 2003-09-29 2004-07-22 Etching method

Country Status (5)

Country Link
US (1) US7256135B2 (zh)
JP (1) JP4727171B2 (zh)
KR (1) KR100619111B1 (zh)
CN (1) CN1300637C (zh)
TW (1) TW200512791A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475335B (zh) * 2011-03-29 2015-03-01 Fujifilm Corp 抗蝕劑圖案形成方法以及使用該抗蝕劑圖案的圖案化基板的製造方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723238B2 (en) * 2004-06-16 2010-05-25 Tokyo Electron Limited Method for preventing striation at a sidewall of an opening of a resist during an etching process
US7271107B2 (en) * 2005-02-03 2007-09-18 Lam Research Corporation Reduction of feature critical dimensions using multiple masks
US7539969B2 (en) * 2005-05-10 2009-05-26 Lam Research Corporation Computer readable mask shrink control processor
US7465525B2 (en) * 2005-05-10 2008-12-16 Lam Research Corporation Reticle alignment and overlay for multiple reticle process
US20060292876A1 (en) * 2005-06-21 2006-12-28 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium
US7271108B2 (en) * 2005-06-28 2007-09-18 Lam Research Corporation Multiple mask process with etch mask stack
US7273815B2 (en) * 2005-08-18 2007-09-25 Lam Research Corporation Etch features with reduced line edge roughness
US20070211402A1 (en) * 2006-03-08 2007-09-13 Tokyo Electron Limited Substrate processing apparatus, substrate attracting method, and storage medium
JP2007294905A (ja) * 2006-03-30 2007-11-08 Hitachi High-Technologies Corp 半導体製造方法およびエッチングシステム
JP4861893B2 (ja) * 2006-07-28 2012-01-25 東京エレクトロン株式会社 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板の処理システム
US7491343B2 (en) * 2006-09-14 2009-02-17 Lam Research Corporation Line end shortening reduction during etch
JP2008078582A (ja) * 2006-09-25 2008-04-03 Hitachi High-Technologies Corp プラズマエッチング方法
JP4912907B2 (ja) * 2007-02-06 2012-04-11 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP5065787B2 (ja) * 2007-07-27 2012-11-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および記憶媒体
US7838426B2 (en) * 2007-08-20 2010-11-23 Lam Research Corporation Mask trimming
US7998872B2 (en) * 2008-02-06 2011-08-16 Tokyo Electron Limited Method for etching a silicon-containing ARC layer to reduce roughness and CD
JP2009193988A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法及びコンピュータ記憶媒体
JP5027753B2 (ja) * 2008-07-30 2012-09-19 東京エレクトロン株式会社 基板処理制御方法及び記憶媒体
JP4638550B2 (ja) 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US9601349B2 (en) * 2009-02-17 2017-03-21 Macronix International Co., Ltd. Etching method
JP5260356B2 (ja) 2009-03-05 2013-08-14 東京エレクトロン株式会社 基板処理方法
CN102117737B (zh) * 2009-12-30 2015-01-07 中国科学院微电子研究所 减小半导体器件中ler的方法及半导体器件
JP2013222852A (ja) 2012-04-17 2013-10-28 Tokyo Electron Ltd 有機膜をエッチングする方法及びプラズマエッチング装置
JP6355374B2 (ja) * 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6289996B2 (ja) * 2014-05-14 2018-03-07 東京エレクトロン株式会社 被エッチング層をエッチングする方法
JP6817168B2 (ja) * 2017-08-25 2021-01-20 東京エレクトロン株式会社 被処理体を処理する方法
JP6913569B2 (ja) 2017-08-25 2021-08-04 東京エレクトロン株式会社 被処理体を処理する方法
US11227767B2 (en) 2018-05-03 2022-01-18 Tokyo Electron Limited Critical dimension trimming method designed to minimize line width roughness and line edge roughness
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7278456B2 (ja) * 2018-07-27 2023-05-19 東京エレクトロン株式会社 プラズマ処理装置
JP7195113B2 (ja) * 2018-11-07 2022-12-23 東京エレクトロン株式会社 処理方法及び基板処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68923247T2 (de) * 1988-11-04 1995-10-26 Fujitsu Ltd Verfahren zum Erzeugen eines Fotolackmusters.
JP3445886B2 (ja) * 1995-10-27 2003-09-08 松下電器産業株式会社 半導体装置の製造方法及び半導体装置の製造装置
JP3316407B2 (ja) * 1997-02-26 2002-08-19 シャープ株式会社 半導体装置の製造方法
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
JP2000077386A (ja) * 1998-08-27 2000-03-14 Seiko Epson Corp パターン形成方法
US6362111B1 (en) * 1998-12-09 2002-03-26 Texas Instruments Incorporated Tunable gate linewidth reduction process
JP2000183027A (ja) * 1998-12-11 2000-06-30 Mitsubishi Electric Corp 半導体装置の製造方法
TW525260B (en) * 1999-08-02 2003-03-21 Taiwan Semiconductor Mfg Shallow trench isolation pull-back process
US6461969B1 (en) * 1999-11-22 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Multiple-step plasma etching process for silicon nitride
US6569774B1 (en) * 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
JP2002343780A (ja) * 2001-05-01 2002-11-29 Applied Materials Inc ガス導入装置、成膜装置、及び成膜方法
CN1277293C (zh) * 2001-07-10 2006-09-27 东京毅力科创株式会社 干蚀刻方法
JP2003077900A (ja) * 2001-09-06 2003-03-14 Hitachi Ltd 半導体装置の製造方法
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
US20040224524A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Maintaining the dimensions of features being etched on a lithographic mask
US6955961B1 (en) * 2004-05-27 2005-10-18 Macronix International Co., Ltd. Method for defining a minimum pitch in an integrated circuit beyond photolithographic resolution

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475335B (zh) * 2011-03-29 2015-03-01 Fujifilm Corp 抗蝕劑圖案形成方法以及使用該抗蝕劑圖案的圖案化基板的製造方法

Also Published As

Publication number Publication date
CN1300637C (zh) 2007-02-14
JP2005129893A (ja) 2005-05-19
TWI357092B (zh) 2012-01-21
CN1603959A (zh) 2005-04-06
US20050070111A1 (en) 2005-03-31
US7256135B2 (en) 2007-08-14
KR20050031375A (ko) 2005-04-06
KR100619111B1 (ko) 2006-09-04
JP4727171B2 (ja) 2011-07-20

Similar Documents

Publication Publication Date Title
TW200512791A (en) Etching method
TW200943409A (en) Substrate treating method and substrate treated thereby
CN101459074B (zh) 刻蚀方法和双镶嵌结构的形成方法
TW200508317A (en) Resin molded product production process, metal structure production process, and resin molded product
JP2008547236A5 (zh)
WO2000019272B1 (en) Methods of reducing proximity effects in lithographic processes
SG143251A1 (en) Process solutions containing surfactants
WO2010065249A3 (en) Methods of fabricating substrates
JP2007531054A5 (zh)
KR20140143825A (ko) 포토레지스트 상에 플라즈마 에칭 전 처리를 사용하여 피처들을 형성하기 위한 방법 및 장치
TW200608157A (en) Resist-pattern forming method and composite rinse solution
KR20130036713A (ko) 펄싱된 바이어스로 에칭
KR20130091684A (ko) 평활 측벽의 급속 교번 에칭 프로세스를 위한 제어된 가스 혼합
TW200627538A (en) Method for preparing structure with high aspect ratio
BR0013846B1 (pt) processo para formação de um padrão condutor em substratos dielétricos.
WO2013100955A1 (en) Annealing a sacrificial layer
CN104901160A (zh) 分布反馈激光器中基于纳米压印光栅干法刻蚀的方法
KR20140018818A (ko) 비아 제공 방법
US10020183B1 (en) Edge roughness reduction
KR20170020231A (ko) 섀도우 트림 라인 에지 거칠기 감소
KR100744121B1 (ko) 반도체 기판의 처리 방법
CN114823297B (zh) 光刻胶去除工艺及半导体制造工艺
TW201830522A (zh) 有機層蝕刻中垂直輪廓之產生方法
CN103426818A (zh) 修复金属互连层工艺中等离子体损伤的方法
KR102626483B1 (ko) 반도체 프로세싱을 위한 실리콘-기반 증착