TW200308079A - Semiconductor device and semiconductor memory using the same - Google Patents
Semiconductor device and semiconductor memory using the same Download PDFInfo
- Publication number
- TW200308079A TW200308079A TW092104783A TW92104783A TW200308079A TW 200308079 A TW200308079 A TW 200308079A TW 092104783 A TW092104783 A TW 092104783A TW 92104783 A TW92104783 A TW 92104783A TW 200308079 A TW200308079 A TW 200308079A
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- source
- layer
- region
- semiconductor memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 62
- 238000007667 floating Methods 0.000 claims description 107
- 210000004027 cell Anatomy 0.000 claims description 88
- 238000009413 insulation Methods 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 36
- 238000002955 isolation Methods 0.000 claims description 32
- 238000003860 storage Methods 0.000 claims description 27
- 210000000352 storage cell Anatomy 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 22
- 230000002829 reductive effect Effects 0.000 claims description 13
- 238000000605 extraction Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 353
- 229920002120 photoresistant polymer Polymers 0.000 description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
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- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
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- 239000003990 capacitor Substances 0.000 description 11
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- 150000004767 nitrides Chemical class 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
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- 229910052782 aluminium Inorganic materials 0.000 description 6
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- 230000015556 catabolic process Effects 0.000 description 5
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- 241000196324 Embryophyta Species 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052722 tritium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
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- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
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- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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- 230000036541 health Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
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- 238000005065 mining Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000011257 shell material Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
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- 238000000992 sputter etching Methods 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/687—Floating-gate IGFETs having more than two programming levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002089744 | 2002-03-27 | ||
| JP2003036005A JP4472934B2 (ja) | 2002-03-27 | 2003-02-14 | 半導体装置および半導体メモリ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200308079A true TW200308079A (en) | 2003-12-16 |
Family
ID=27807028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092104783A TW200308079A (en) | 2002-03-27 | 2003-03-06 | Semiconductor device and semiconductor memory using the same |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6984863B2 (enExample) |
| EP (1) | EP1349215A2 (enExample) |
| JP (1) | JP4472934B2 (enExample) |
| KR (1) | KR20030078023A (enExample) |
| CN (1) | CN1447436A (enExample) |
| TW (1) | TW200308079A (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004214495A (ja) * | 2003-01-07 | 2004-07-29 | Innotech Corp | トランジスタとそれを用いた半導体メモリ、および半導体メモリの製造方法 |
| US6914825B2 (en) * | 2003-04-03 | 2005-07-05 | Ememory Technology Inc. | Semiconductor memory device having improved data retention |
| US6936883B2 (en) * | 2003-04-07 | 2005-08-30 | Silicon Storage Technology, Inc. | Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation |
| US6967143B2 (en) * | 2003-04-30 | 2005-11-22 | Freescale Semiconductor, Inc. | Semiconductor fabrication process with asymmetrical conductive spacers |
| US7192876B2 (en) * | 2003-05-22 | 2007-03-20 | Freescale Semiconductor, Inc. | Transistor with independent gate structures |
| WO2004109806A1 (ja) * | 2003-06-04 | 2004-12-16 | Fujitsu Limited | 不揮発性半導体メモリ |
| US7202523B2 (en) * | 2003-11-17 | 2007-04-10 | Micron Technology, Inc. | NROM flash memory devices on ultrathin silicon |
| KR100618819B1 (ko) * | 2004-02-06 | 2006-08-31 | 삼성전자주식회사 | 오버레이 마진이 개선된 반도체 소자 및 그 제조방법 |
| JP4557678B2 (ja) * | 2004-02-13 | 2010-10-06 | イノテック株式会社 | 半導体記憶装置 |
| US7087950B2 (en) * | 2004-04-30 | 2006-08-08 | Infineon Technologies Ag | Flash memory cell, flash memory device and manufacturing method thereof |
| KR101488516B1 (ko) * | 2006-03-21 | 2015-02-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 불휘발성 반도체 기억장치 |
| JP5164406B2 (ja) * | 2006-03-21 | 2013-03-21 | 株式会社半導体エネルギー研究所 | 不揮発性半導体記憶装置 |
| JP5164405B2 (ja) * | 2006-03-21 | 2013-03-21 | 株式会社半導体エネルギー研究所 | 不揮発性半導体記憶装置 |
| JP5164404B2 (ja) * | 2006-03-21 | 2013-03-21 | 株式会社半導体エネルギー研究所 | 不揮発性半導体記憶装置 |
| TWI416738B (zh) | 2006-03-21 | 2013-11-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
| EP1837917A1 (en) * | 2006-03-21 | 2007-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| JP2007288175A (ja) * | 2006-03-21 | 2007-11-01 | Semiconductor Energy Lab Co Ltd | 不揮発性半導体記憶装置 |
| JP5466815B2 (ja) * | 2006-03-31 | 2014-04-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP1840947A3 (en) | 2006-03-31 | 2008-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| JP5483659B2 (ja) * | 2006-03-31 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2007294911A (ja) * | 2006-03-31 | 2007-11-08 | Semiconductor Energy Lab Co Ltd | 不揮発性半導体記憶装置 |
| US7755132B2 (en) | 2006-08-16 | 2010-07-13 | Sandisk Corporation | Nonvolatile memories with shaped floating gates |
| US7494860B2 (en) * | 2006-08-16 | 2009-02-24 | Sandisk Corporation | Methods of forming nonvolatile memories with L-shaped floating gates |
| JP5270205B2 (ja) | 2008-03-24 | 2013-08-21 | 株式会社Ｄｎｐファインケミカル | インクジェット記録用油性緑色インク組成物およびインクジェット記録用油性インクセット |
| KR101096907B1 (ko) * | 2009-10-05 | 2011-12-22 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 형성방법 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5379255A (en) | 1992-12-14 | 1995-01-03 | Texas Instruments Incorporated | Three dimensional famos memory devices and methods of fabricating |
| JP4397491B2 (ja) | 1999-11-30 | 2010-01-13 | 財団法人国際科学振興財団 | １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法 |
| JP3283872B1 (ja) | 2001-04-12 | 2002-05-20 | イノテック株式会社 | 半導体記憶装置、その製造方法及び半導体記憶装置の駆動方法 |
| JP3249811B1 (ja) | 2000-11-09 | 2002-01-21 | イノテック株式会社 | 半導体記憶装置、その製造方法及び半導体記憶装置の駆動方法 |
| JP3249812B1 (ja) | 2001-05-14 | 2002-01-21 | イノテック株式会社 | 半導体記憶装置及びその製造方法 |
| JP4191975B2 (ja) | 2001-11-01 | 2008-12-03 | イノテック株式会社 | トランジスタとそれを用いた半導体メモリ、およびトランジスタの製造方法 |
| JP2004072060A (ja) | 2001-11-22 | 2004-03-04 | Innotech Corp | トランジスタとそれを用いた半導体メモリ、およびトランジスタの駆動方法 |
| JP2003224215A (ja) | 2001-11-22 | 2003-08-08 | Innotech Corp | トランジスタとそれを用いた半導体メモリ、およびトランジスタの駆動方法 |
| US6861315B1 (en) | 2003-08-14 | 2005-03-01 | Silicon Storage Technology, Inc. | Method of manufacturing an array of bi-directional nonvolatile memory cells |
-
2003
- 2003-02-14 JP JP2003036005A patent/JP4472934B2/ja not_active Expired - Lifetime
- 2003-03-06 TW TW092104783A patent/TW200308079A/zh unknown
- 2003-03-26 EP EP03006801A patent/EP1349215A2/en not_active Withdrawn
- 2003-03-26 KR KR10-2003-0018958A patent/KR20030078023A/ko not_active Withdrawn
- 2003-03-27 US US10/397,377 patent/US6984863B2/en not_active Expired - Fee Related
- 2003-03-27 CN CN03128647A patent/CN1447436A/zh active Pending
-
2005
- 2005-09-28 US US11/236,629 patent/US7221029B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1447436A (zh) | 2003-10-08 |
| US20030183872A1 (en) | 2003-10-02 |
| KR20030078023A (ko) | 2003-10-04 |
| US6984863B2 (en) | 2006-01-10 |
| JP4472934B2 (ja) | 2010-06-02 |
| EP1349215A2 (en) | 2003-10-01 |
| US20060027857A1 (en) | 2006-02-09 |
| US7221029B2 (en) | 2007-05-22 |
| JP2004006658A (ja) | 2004-01-08 |
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