TW200302874A - Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target - Google Patents
Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target Download PDFInfo
- Publication number
- TW200302874A TW200302874A TW091135935A TW91135935A TW200302874A TW 200302874 A TW200302874 A TW 200302874A TW 091135935 A TW091135935 A TW 091135935A TW 91135935 A TW91135935 A TW 91135935A TW 200302874 A TW200302874 A TW 200302874A
- Authority
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- Taiwan
- Prior art keywords
- oxide
- sputtering target
- zinc sulfide
- target
- protective film
- Prior art date
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- 239000005083 Zinc sulfide Substances 0.000 title claims abstract description 92
- 229910052984 zinc sulfide Inorganic materials 0.000 title claims abstract description 92
- 230000003287 optical effect Effects 0.000 title claims abstract description 78
- 238000005477 sputtering target Methods 0.000 title claims abstract description 72
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 230000001681 protective effect Effects 0.000 title claims abstract description 49
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000011787 zinc oxide Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- 239000000843 powder Substances 0.000 claims description 26
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011812 mixed powder Substances 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 11
- 238000007496 glass forming Methods 0.000 claims description 10
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 10
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 10
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 9
- 229910052810 boron oxide Inorganic materials 0.000 claims description 9
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 9
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 9
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 9
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 9
- 150000001339 alkali metal compounds Chemical class 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 8
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 8
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 claims description 8
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229940063789 zinc sulfide Drugs 0.000 claims 17
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 56
- 239000002245 particle Substances 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 65
- 229910052681 coesite Inorganic materials 0.000 description 17
- 229910052906 cristobalite Inorganic materials 0.000 description 17
- 229910052682 stishovite Inorganic materials 0.000 description 17
- 229910052905 tridymite Inorganic materials 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 10
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 239000000428 dust Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- GGCHXCZGMDRXPH-UHFFFAOYSA-N [Si+2]=O.[S-2].[Zn+2].[S-2] Chemical compound [Si+2]=O.[S-2].[Zn+2].[S-2] GGCHXCZGMDRXPH-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- -1 doped oxide Chemical compound 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25716—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing sulfur
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002036154A JP4198918B2 (ja) | 2002-02-14 | 2002-02-14 | 硫化亜鉛を主成分とするスパッタリングターゲット及び該スパッタリングターゲットの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200302874A true TW200302874A (en) | 2003-08-16 |
| TWI293067B TWI293067B (enExample) | 2008-02-01 |
Family
ID=27678079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091135935A TW200302874A (en) | 2002-02-14 | 2002-12-12 | Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7279211B2 (enExample) |
| EP (1) | EP1475795B1 (enExample) |
| JP (1) | JP4198918B2 (enExample) |
| KR (1) | KR100584777B1 (enExample) |
| CN (1) | CN1296924C (enExample) |
| TW (1) | TW200302874A (enExample) |
| WO (1) | WO2003069612A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4611198B2 (ja) * | 2003-03-04 | 2011-01-12 | Ｊｘ日鉱日石金属株式会社 | 光情報記録媒体用の非晶質性保護膜を形成するためのスパッタリングターゲット、光情報記録媒体用の非晶質性保護膜及びその製造方法 |
| EP1602746B1 (en) * | 2003-03-04 | 2008-10-08 | Nippon Mining & Metals Co., Ltd. | Sputtering target and process for producing the same, thin film for optical information recording medium and process for producing the same |
| JP4430014B2 (ja) * | 2003-09-30 | 2010-03-10 | 日鉱金属株式会社 | 高純度酸化亜鉛粉末の製造方法 |
| JP4136980B2 (ja) * | 2004-03-19 | 2008-08-20 | 株式会社リコー | 多層相変化型情報記録媒体及びその記録再生方法 |
| JP4794863B2 (ja) * | 2005-01-21 | 2011-10-19 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲット及び光情報記録媒体用薄膜 |
| TW200639848A (en) * | 2005-02-01 | 2006-11-16 | Fuji Photo Film Co Ltd | Optical information recording medium and manufacturing method thereof |
| KR20080021111A (ko) * | 2005-06-23 | 2008-03-06 | 닛코킨조쿠 가부시키가이샤 | 스퍼터링 타겟트 및 광 정보기록매체용 박막 |
| US7686985B2 (en) * | 2005-06-28 | 2010-03-30 | Nippon Mining & Metals Co., Ltd | Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film |
| KR101004981B1 (ko) * | 2005-06-28 | 2011-01-04 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 산화갈륨-산화아연계 스퍼터링 타겟, 투명 도전막의 형성방법 및 투명 도전막 |
| JP5058469B2 (ja) * | 2005-09-06 | 2012-10-24 | キヤノン株式会社 | スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法 |
| CN101326304B (zh) * | 2005-12-08 | 2011-05-04 | Jx日矿日石金属株式会社 | 氧化镓-氧化锌类溅射靶、透明导电膜及其形成方法 |
| CN101405427B (zh) * | 2006-03-17 | 2012-07-18 | Jx日矿日石金属株式会社 | 氧化锌系透明导体以及该透明导体形成用溅射靶 |
| CN101490766B (zh) * | 2006-08-24 | 2011-11-30 | Jx日矿日石金属株式会社 | 氧化锌系透明导体、溅射靶以及该溅射靶的制造方法 |
| US7687990B2 (en) * | 2007-04-12 | 2010-03-30 | Global Oled Technology Llc | OLED device with short reduction |
| US20090220680A1 (en) * | 2008-02-29 | 2009-09-03 | Winters Dustin L | Oled device with short reduction |
| EP2110694B1 (en) * | 2008-04-18 | 2013-08-14 | Sony DADC Austria AG | Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement |
| JP5160602B2 (ja) * | 2010-09-02 | 2013-03-13 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲット及び光情報記録媒体用薄膜 |
| JP2015504479A (ja) | 2011-11-08 | 2015-02-12 | トーソー エスエムディー，インク． | 特別な表面処理及び優れた粒子性能を有するシリコンスパッターターゲット及びその製造方法 |
| JP5896121B2 (ja) * | 2012-01-13 | 2016-03-30 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット及び光記録媒体用保護膜 |
| JP5954620B2 (ja) * | 2012-04-04 | 2016-07-20 | 三菱マテリアル株式会社 | 透明酸化物膜形成用スパッタリングターゲット及びその製造方法 |
| JP5883368B2 (ja) | 2012-09-14 | 2016-03-15 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット |
| JP5883367B2 (ja) | 2012-09-14 | 2016-03-15 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法 |
| JP6134368B2 (ja) * | 2015-10-19 | 2017-05-24 | Ｊｘ金属株式会社 | 焼結体及び該焼結体からなるスパッタリングターゲット並びに該スパッタリングターゲットを用いて形成した薄膜 |
| CN114890785A (zh) * | 2022-05-31 | 2022-08-12 | 先导薄膜材料（广东）有限公司 | 一种硫氧锌靶材及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CS163590A3 (en) * | 1989-04-06 | 1992-06-17 | Mitsui Petrochemical Ind | Optical recording medium and process for producing thereof |
| US5635310A (en) * | 1989-10-20 | 1997-06-03 | Casio Computer Co., Ltd. | ZnS dielectric thin film and magnetic recording medium |
| JP3190274B2 (ja) * | 1996-12-28 | 2001-07-23 | ティーディーケイ株式会社 | 光記録媒体およびその製造方法 |
| JP3636914B2 (ja) * | 1998-02-16 | 2005-04-06 | 株式会社日鉱マテリアルズ | 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット |
| JP3692776B2 (ja) * | 1998-05-21 | 2005-09-07 | 三菱化学株式会社 | 光学的情報記録用媒体およびその製造方法 |
| JP3533333B2 (ja) * | 1998-08-21 | 2004-05-31 | Ｔｄｋ株式会社 | 光記録媒体の干渉膜用スパッタリングターゲットおよびその製造方法 |
| JP4030205B2 (ja) * | 1998-10-26 | 2008-01-09 | 日立マクセル株式会社 | 情報記録媒体及び情報記録装置 |
| JP3894403B2 (ja) * | 1999-07-01 | 2007-03-22 | 日鉱金属株式会社 | 光ディスク保護膜形成スパッタリングターゲット |
| JP3915109B2 (ja) * | 1999-09-28 | 2007-05-16 | 三菱マテリアル株式会社 | 光記録媒体保護層形成用スパッタリングターゲット材 |
| US6656260B2 (en) * | 1999-12-28 | 2003-12-02 | Kyocera Corporation | ZnS-series sintered material and method for producing the same, target using the ZnS-series sintered material, thin film, and optical recording medium using the thin film |
| JP3882186B2 (ja) * | 2000-01-06 | 2007-02-14 | 三菱マテリアル株式会社 | 直流スパッタリング可能な光記録保護膜形成用スパッタリングターゲット |
| JP2001316804A (ja) * | 2000-05-08 | 2001-11-16 | Mitsubishi Materials Corp | 直流スパッタリング可能でかつ異常放電の少ない光記録保護膜形成用スパッタリングターゲット |
| JP2001355065A (ja) * | 2000-06-13 | 2001-12-25 | Mitsubishi Materials Corp | 直流スパッタ条件下で優れた耐割損性を発揮する光記録媒体保護膜形成用スパッタリングターゲット |
| JP4033286B2 (ja) * | 2001-03-19 | 2008-01-16 | 日本板硝子株式会社 | 高屈折率誘電体膜とその製造方法 |
| JP2004071079A (ja) * | 2002-08-08 | 2004-03-04 | Hitachi Ltd | 情報記録媒体 |
| JP2005302261A (ja) * | 2004-03-19 | 2005-10-27 | Ricoh Co Ltd | 光記録媒体 |
-
2002
- 2002-02-14 JP JP2002036154A patent/JP4198918B2/ja not_active Expired - Lifetime
- 2002-12-11 US US10/503,296 patent/US7279211B2/en not_active Expired - Lifetime
- 2002-12-11 WO PCT/JP2002/012964 patent/WO2003069612A1/ja not_active Ceased
- 2002-12-11 KR KR1020047012324A patent/KR100584777B1/ko not_active Expired - Lifetime
- 2002-12-11 EP EP02788788A patent/EP1475795B1/en not_active Expired - Lifetime
- 2002-12-11 CN CNB028280970A patent/CN1296924C/zh not_active Expired - Lifetime
- 2002-12-12 TW TW091135935A patent/TW200302874A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003242684A (ja) | 2003-08-29 |
| JP4198918B2 (ja) | 2008-12-17 |
| EP1475795B1 (en) | 2012-10-10 |
| US20050084799A1 (en) | 2005-04-21 |
| KR100584777B1 (ko) | 2006-05-29 |
| TWI293067B (enExample) | 2008-02-01 |
| CN1620692A (zh) | 2005-05-25 |
| US7279211B2 (en) | 2007-10-09 |
| CN1296924C (zh) | 2007-01-24 |
| EP1475795A1 (en) | 2004-11-10 |
| KR20040078694A (ko) | 2004-09-10 |
| WO2003069612A1 (fr) | 2003-08-21 |
| EP1475795A4 (en) | 2007-07-25 |
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