CN101490766B - 氧化锌系透明导体、溅射靶以及该溅射靶的制造方法 - Google Patents
氧化锌系透明导体、溅射靶以及该溅射靶的制造方法 Download PDFInfo
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- CN101490766B CN101490766B CN2007800271054A CN200780027105A CN101490766B CN 101490766 B CN101490766 B CN 101490766B CN 2007800271054 A CN2007800271054 A CN 2007800271054A CN 200780027105 A CN200780027105 A CN 200780027105A CN 101490766 B CN101490766 B CN 101490766B
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- zinc oxide
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- type dopant
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 392
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 191
- 239000004020 conductor Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005477 sputtering target Methods 0.000 title claims description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 118
- 239000002184 metal Substances 0.000 claims abstract description 111
- 239000002019 doping agent Substances 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000002156 mixing Methods 0.000 claims abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 86
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 63
- 239000010949 copper Substances 0.000 claims description 60
- 238000005303 weighing Methods 0.000 claims description 50
- 239000000843 powder Substances 0.000 claims description 48
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 claims description 43
- 229910052733 gallium Inorganic materials 0.000 claims description 36
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 34
- 239000004411 aluminium Substances 0.000 claims description 32
- 229910052782 aluminium Inorganic materials 0.000 claims description 31
- 229910052759 nickel Inorganic materials 0.000 claims description 28
- 229910052802 copper Inorganic materials 0.000 claims description 25
- 238000005245 sintering Methods 0.000 claims description 23
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 239000011701 zinc Substances 0.000 claims description 19
- 229910017052 cobalt Inorganic materials 0.000 claims description 15
- 239000010941 cobalt Substances 0.000 claims description 15
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000006479 redox reaction Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 56
- 230000000996 additive effect Effects 0.000 abstract description 19
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009736 wetting Methods 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 57
- 238000010200 validation analysis Methods 0.000 description 54
- 230000000694 effects Effects 0.000 description 34
- 229910052742 iron Inorganic materials 0.000 description 21
- 239000013078 crystal Substances 0.000 description 15
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 210000000713 mesentery Anatomy 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000009931 harmful effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 206010052128 Glare Diseases 0.000 description 2
- -1 add Co Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 235000012364 Peperomia pellucida Nutrition 0.000 description 1
- 240000007711 Peperomia pellucida Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
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Abstract
Description
Claims (12)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP227720/2006 | 2006-08-24 | ||
JP2006227720 | 2006-08-24 | ||
JP020338/2007 | 2007-01-31 | ||
JP2007020338 | 2007-01-31 | ||
PCT/JP2007/060487 WO2008023482A1 (fr) | 2006-08-24 | 2007-05-23 | conducteur électrique transparent à base d'oxyde de zinc, cible de pulvérisation cathodique pour former le conducteur et processus de fabrication de la cible |
Publications (2)
Publication Number | Publication Date |
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CN101490766A CN101490766A (zh) | 2009-07-22 |
CN101490766B true CN101490766B (zh) | 2011-11-30 |
Family
ID=39106575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007800271054A Active CN101490766B (zh) | 2006-08-24 | 2007-05-23 | 氧化锌系透明导体、溅射靶以及该溅射靶的制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8007693B2 (zh) |
EP (1) | EP2056304A4 (zh) |
JP (1) | JP5090358B2 (zh) |
KR (1) | KR101080022B1 (zh) |
CN (1) | CN101490766B (zh) |
TW (1) | TW200811301A (zh) |
WO (1) | WO2008023482A1 (zh) |
Families Citing this family (15)
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EP1897969B1 (en) * | 2005-06-28 | 2019-01-23 | JX Nippon Mining & Metals Corporation | Gallium oxide-zinc oxide sputtering target and method for forming a transparent conductive film using the target |
US7674404B2 (en) * | 2005-12-08 | 2010-03-09 | Nippon Mining & Metals Co., Ltd. | Gallium oxide/zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film |
KR20120108062A (ko) * | 2007-06-26 | 2012-10-04 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체 |
US8277694B2 (en) * | 2007-07-13 | 2012-10-02 | Jx Nippon Mining & Metals Corporation | Sintered compact of composite oxide, amorphous film of composite oxide, process for producing said film, crystalline film of composite oxide and process for producing said film |
CN102016112B (zh) * | 2008-06-10 | 2012-08-08 | Jx日矿日石金属株式会社 | 溅射用氧化物烧结体靶及其制造方法 |
CN102459122B (zh) | 2009-06-05 | 2014-02-05 | 吉坤日矿日石金属株式会社 | 氧化物烧结体、其制造方法以及氧化物烧结体制造用原料粉末 |
CN102296270B (zh) * | 2011-08-30 | 2013-06-19 | 华南理工大学 | 掺杂氧化锌半导体材料及其制备方法与应用 |
RU2491252C2 (ru) * | 2011-11-14 | 2013-08-27 | Учреждение Российской Академии наук "Институт физики им. Х.И. Амирханова Дагестанского научного центра РАН" | Способ изготовления мишени на основе оксида цинка |
WO2014054361A1 (ja) * | 2012-10-02 | 2014-04-10 | Jx日鉱日石金属株式会社 | 酸化亜鉛系焼結体、該焼結体からなる酸化亜鉛系スパッタリングターゲット及び該ターゲットをスパッタリングして得られた酸化亜鉛系薄膜 |
CN205275690U (zh) * | 2013-02-01 | 2016-06-01 | 应用材料公司 | 溅镀靶材组件 |
JP6110188B2 (ja) * | 2013-04-05 | 2017-04-05 | リンテック株式会社 | 透明導電フィルム、電子デバイス、および透明導電フィルムの製造方法 |
JP6293359B2 (ja) | 2015-02-27 | 2018-03-14 | Jx金属株式会社 | 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット |
KR102000856B1 (ko) | 2015-02-27 | 2019-07-16 | 제이엑스금속주식회사 | 산화물 소결체, 산화물 스퍼터링 타깃 및 산화물 박막 |
JP6285076B2 (ja) | 2015-03-23 | 2018-02-28 | Jx金属株式会社 | 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット |
CN115010482B (zh) * | 2022-05-11 | 2023-10-24 | 内蒙古大学 | 一种大功率用高导电氧化锌基陶瓷的制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1379827A (zh) * | 1999-11-25 | 2002-11-13 | 出光兴产株式会社 | 溅射靶、透明导电氧化物和制备该溅射靶的方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61205619A (ja) | 1985-03-08 | 1986-09-11 | Osaka Tokushu Gokin Kk | 耐熱性酸化亜鉛透明導電膜 |
JPS62154411A (ja) | 1985-12-26 | 1987-07-09 | 三井金属鉱業株式会社 | 透明導電膜 |
JPH04219359A (ja) * | 1990-12-19 | 1992-08-10 | Tosoh Corp | 導電性酸化亜鉛焼結体 |
US5672427A (en) * | 1993-08-31 | 1997-09-30 | Mitsubishi Materials Corporation | Zinc oxide powder having high dispersibility |
JPH0945140A (ja) * | 1995-07-28 | 1997-02-14 | Sumitomo Metal Mining Co Ltd | 酸化亜鉛系透明導電性膜 |
JPH09320344A (ja) | 1996-05-24 | 1997-12-12 | Kojundo Chem Lab Co Ltd | 透明導電膜および透明導電材料 |
JPH10306367A (ja) * | 1997-05-06 | 1998-11-17 | Sumitomo Metal Mining Co Ltd | スパッタリングターゲット用ZnO−Ga2O3系焼結体およびその製造方法 |
JP3636914B2 (ja) | 1998-02-16 | 2005-04-06 | 株式会社日鉱マテリアルズ | 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット |
JP3904378B2 (ja) | 2000-08-02 | 2007-04-11 | ローム株式会社 | 酸化亜鉛透明導電膜 |
JP2002075062A (ja) | 2000-09-01 | 2002-03-15 | Uchitsugu Minami | 透明導電膜 |
JP2002363732A (ja) * | 2001-03-15 | 2002-12-18 | Asahi Glass Co Ltd | 透明導電膜の製造方法および透明導電膜付き透明基板 |
JP4198918B2 (ja) | 2002-02-14 | 2008-12-17 | 日鉱金属株式会社 | 硫化亜鉛を主成分とするスパッタリングターゲット及び該スパッタリングターゲットの製造方法 |
US7635440B2 (en) | 2003-03-04 | 2009-12-22 | Nippon Mining & Metals Co., Ltd. | Sputtering target, thin film for optical information recording medium and process for producing the same |
KR100753329B1 (ko) | 2003-09-30 | 2007-08-29 | 닛코킨조쿠 가부시키가이샤 | 고순도 산화아연 분말 및 그 제조방법과 고순도 산화아연타겟트 및 고순도 산화아연 박막 |
CA2594290A1 (en) * | 2005-02-24 | 2006-08-31 | Sekisui Chemical Co., Ltd. | Gallium containing zinc oxide |
JP4054054B2 (ja) | 2005-06-28 | 2008-02-27 | 日鉱金属株式会社 | 酸化ガリウム−酸化亜鉛系スパッタリングターゲット、透明導電膜の形成方法及び透明導電膜 |
EP1897969B1 (en) * | 2005-06-28 | 2019-01-23 | JX Nippon Mining & Metals Corporation | Gallium oxide-zinc oxide sputtering target and method for forming a transparent conductive film using the target |
WO2007108266A1 (ja) | 2006-03-17 | 2007-09-27 | Nippon Mining & Metals Co., Ltd. | 酸化亜鉛系透明導電体及び同透明導電体形成用スパッタリングターゲット |
JP4779798B2 (ja) * | 2006-05-11 | 2011-09-28 | 住友金属鉱山株式会社 | 酸化物焼結体、ターゲット、およびそれを用いて得られる透明導電膜 |
-
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1379827A (zh) * | 1999-11-25 | 2002-11-13 | 出光兴产株式会社 | 溅射靶、透明导电氧化物和制备该溅射靶的方法 |
Non-Patent Citations (2)
Title |
---|
JP平10-306367A 1998.11.17 |
Tadatsugu Minami et al.Transparent conducting impurity-co-doped ZnO:Al thin films prepared by Magnetron sputtering.《Thin Solid Films》.2001,第398-399卷53-58. * |
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KR101080022B1 (ko) | 2011-11-04 |
JP5090358B2 (ja) | 2012-12-05 |
JPWO2008023482A1 (ja) | 2010-01-07 |
US8007693B2 (en) | 2011-08-30 |
CN101490766A (zh) | 2009-07-22 |
KR20090015143A (ko) | 2009-02-11 |
WO2008023482A1 (fr) | 2008-02-28 |
TWI342896B (zh) | 2011-06-01 |
EP2056304A1 (en) | 2009-05-06 |
TW200811301A (en) | 2008-03-01 |
EP2056304A4 (en) | 2010-06-16 |
US20090200525A1 (en) | 2009-08-13 |
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