CN1296924C - 以硫化锌作为主成分的溅射靶、使用所述靶形成有以硫化锌作为主成分的相变型光盘保护膜的光记录介质、以及所述溅射靶的制造方法 - Google Patents

以硫化锌作为主成分的溅射靶、使用所述靶形成有以硫化锌作为主成分的相变型光盘保护膜的光记录介质、以及所述溅射靶的制造方法 Download PDF

Info

Publication number
CN1296924C
CN1296924C CNB028280970A CN02828097A CN1296924C CN 1296924 C CN1296924 C CN 1296924C CN B028280970 A CNB028280970 A CN B028280970A CN 02828097 A CN02828097 A CN 02828097A CN 1296924 C CN1296924 C CN 1296924C
Authority
CN
China
Prior art keywords
sputtering target
oxide
target
zinc sulfide
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB028280970A
Other languages
English (en)
Chinese (zh)
Other versions
CN1620692A (zh
Inventor
矢作政隆
高见英生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
Nippon Mining and Metals Co Ltd
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd, Nikko Materials Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Publication of CN1620692A publication Critical patent/CN1620692A/zh
Application granted granted Critical
Publication of CN1296924C publication Critical patent/CN1296924C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
    • G11B7/2548—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25716—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing sulfur
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Compositions Of Oxide Ceramics (AREA)
CNB028280970A 2002-02-14 2002-12-11 以硫化锌作为主成分的溅射靶、使用所述靶形成有以硫化锌作为主成分的相变型光盘保护膜的光记录介质、以及所述溅射靶的制造方法 Expired - Lifetime CN1296924C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002036154A JP4198918B2 (ja) 2002-02-14 2002-02-14 硫化亜鉛を主成分とするスパッタリングターゲット及び該スパッタリングターゲットの製造方法
JP036154/2002 2002-02-14

Publications (2)

Publication Number Publication Date
CN1620692A CN1620692A (zh) 2005-05-25
CN1296924C true CN1296924C (zh) 2007-01-24

Family

ID=27678079

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028280970A Expired - Lifetime CN1296924C (zh) 2002-02-14 2002-12-11 以硫化锌作为主成分的溅射靶、使用所述靶形成有以硫化锌作为主成分的相变型光盘保护膜的光记录介质、以及所述溅射靶的制造方法

Country Status (7)

Country Link
US (1) US7279211B2 (enExample)
EP (1) EP1475795B1 (enExample)
JP (1) JP4198918B2 (enExample)
KR (1) KR100584777B1 (enExample)
CN (1) CN1296924C (enExample)
TW (1) TW200302874A (enExample)
WO (1) WO2003069612A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4611198B2 (ja) * 2003-03-04 2011-01-12 Ｊｘ日鉱日石金属株式会社 光情報記録媒体用の非晶質性保護膜を形成するためのスパッタリングターゲット、光情報記録媒体用の非晶質性保護膜及びその製造方法
EP1602746B1 (en) * 2003-03-04 2008-10-08 Nippon Mining & Metals Co., Ltd. Sputtering target and process for producing the same, thin film for optical information recording medium and process for producing the same
JP4430014B2 (ja) * 2003-09-30 2010-03-10 日鉱金属株式会社 高純度酸化亜鉛粉末の製造方法
JP4136980B2 (ja) * 2004-03-19 2008-08-20 株式会社リコー 多層相変化型情報記録媒体及びその記録再生方法
JP4794863B2 (ja) * 2005-01-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット及び光情報記録媒体用薄膜
TW200639848A (en) * 2005-02-01 2006-11-16 Fuji Photo Film Co Ltd Optical information recording medium and manufacturing method thereof
KR20080021111A (ko) * 2005-06-23 2008-03-06 닛코킨조쿠 가부시키가이샤 스퍼터링 타겟트 및 광 정보기록매체용 박막
US7686985B2 (en) * 2005-06-28 2010-03-30 Nippon Mining & Metals Co., Ltd Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film
KR101004981B1 (ko) * 2005-06-28 2011-01-04 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 산화갈륨-산화아연계 스퍼터링 타겟, 투명 도전막의 형성방법 및 투명 도전막
JP5058469B2 (ja) * 2005-09-06 2012-10-24 キヤノン株式会社 スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法
CN101326304B (zh) * 2005-12-08 2011-05-04 Jx日矿日石金属株式会社 氧化镓-氧化锌类溅射靶、透明导电膜及其形成方法
CN101405427B (zh) * 2006-03-17 2012-07-18 Jx日矿日石金属株式会社 氧化锌系透明导体以及该透明导体形成用溅射靶
CN101490766B (zh) * 2006-08-24 2011-11-30 Jx日矿日石金属株式会社 氧化锌系透明导体、溅射靶以及该溅射靶的制造方法
US7687990B2 (en) * 2007-04-12 2010-03-30 Global Oled Technology Llc OLED device with short reduction
US20090220680A1 (en) * 2008-02-29 2009-09-03 Winters Dustin L Oled device with short reduction
EP2110694B1 (en) * 2008-04-18 2013-08-14 Sony DADC Austria AG Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement
JP5160602B2 (ja) * 2010-09-02 2013-03-13 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット及び光情報記録媒体用薄膜
JP2015504479A (ja) 2011-11-08 2015-02-12 トーソー エスエムディー，インク． 特別な表面処理及び優れた粒子性能を有するシリコンスパッターターゲット及びその製造方法
JP5896121B2 (ja) * 2012-01-13 2016-03-30 三菱マテリアル株式会社 酸化物スパッタリングターゲット及び光記録媒体用保護膜
JP5954620B2 (ja) * 2012-04-04 2016-07-20 三菱マテリアル株式会社 透明酸化物膜形成用スパッタリングターゲット及びその製造方法
JP5883368B2 (ja) 2012-09-14 2016-03-15 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
JP5883367B2 (ja) 2012-09-14 2016-03-15 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法
JP6134368B2 (ja) * 2015-10-19 2017-05-24 Ｊｘ金属株式会社 焼結体及び該焼結体からなるスパッタリングターゲット並びに該スパッタリングターゲットを用いて形成した薄膜
CN114890785A (zh) * 2022-05-31 2022-08-12 先导薄膜材料（广东）有限公司 一种硫氧锌靶材及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1046226A (zh) * 1989-04-06 1990-10-17 三井石油化学工业株式会社 光学记录媒体及其制作方法
JPH11328730A (ja) * 1998-05-21 1999-11-30 Mitsubishi Chemical Corp 光学的情報記録用媒体およびその製造方法
JP2001011615A (ja) * 1999-07-01 2001-01-16 Nikko Materials Co Ltd 光ディスク保護膜形成スパッタリングターゲット
JP2001098361A (ja) * 1999-09-28 2001-04-10 Mitsubishi Materials Corp 高出力スパッタ条件ですぐれた耐割損性を発揮する光記録媒体保護層形成用スパッタリングターゲット材
JP2001192820A (ja) * 2000-01-06 2001-07-17 Mitsubishi Materials Corp 直流スパッタリング可能な光記録保護膜形成用スパッタリングターゲット
JP2001316804A (ja) * 2000-05-08 2001-11-16 Mitsubishi Materials Corp 直流スパッタリング可能でかつ異常放電の少ない光記録保護膜形成用スパッタリングターゲット
JP2001355065A (ja) * 2000-06-13 2001-12-25 Mitsubishi Materials Corp 直流スパッタ条件下で優れた耐割損性を発揮する光記録媒体保護膜形成用スパッタリングターゲット

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5635310A (en) * 1989-10-20 1997-06-03 Casio Computer Co., Ltd. ZnS dielectric thin film and magnetic recording medium
JP3190274B2 (ja) * 1996-12-28 2001-07-23 ティーディーケイ株式会社 光記録媒体およびその製造方法
JP3636914B2 (ja) * 1998-02-16 2005-04-06 株式会社日鉱マテリアルズ 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット
JP3533333B2 (ja) * 1998-08-21 2004-05-31 Ｔｄｋ株式会社 光記録媒体の干渉膜用スパッタリングターゲットおよびその製造方法
JP4030205B2 (ja) * 1998-10-26 2008-01-09 日立マクセル株式会社 情報記録媒体及び情報記録装置
US6656260B2 (en) * 1999-12-28 2003-12-02 Kyocera Corporation ZnS-series sintered material and method for producing the same, target using the ZnS-series sintered material, thin film, and optical recording medium using the thin film
JP4033286B2 (ja) * 2001-03-19 2008-01-16 日本板硝子株式会社 高屈折率誘電体膜とその製造方法
JP2004071079A (ja) * 2002-08-08 2004-03-04 Hitachi Ltd 情報記録媒体
JP2005302261A (ja) * 2004-03-19 2005-10-27 Ricoh Co Ltd 光記録媒体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1046226A (zh) * 1989-04-06 1990-10-17 三井石油化学工业株式会社 光学记录媒体及其制作方法
JPH11328730A (ja) * 1998-05-21 1999-11-30 Mitsubishi Chemical Corp 光学的情報記録用媒体およびその製造方法
JP2001011615A (ja) * 1999-07-01 2001-01-16 Nikko Materials Co Ltd 光ディスク保護膜形成スパッタリングターゲット
JP2001098361A (ja) * 1999-09-28 2001-04-10 Mitsubishi Materials Corp 高出力スパッタ条件ですぐれた耐割損性を発揮する光記録媒体保護層形成用スパッタリングターゲット材
JP2001192820A (ja) * 2000-01-06 2001-07-17 Mitsubishi Materials Corp 直流スパッタリング可能な光記録保護膜形成用スパッタリングターゲット
JP2001316804A (ja) * 2000-05-08 2001-11-16 Mitsubishi Materials Corp 直流スパッタリング可能でかつ異常放電の少ない光記録保護膜形成用スパッタリングターゲット
JP2001355065A (ja) * 2000-06-13 2001-12-25 Mitsubishi Materials Corp 直流スパッタ条件下で優れた耐割損性を発揮する光記録媒体保護膜形成用スパッタリングターゲット

Also Published As

Publication number Publication date
JP2003242684A (ja) 2003-08-29
JP4198918B2 (ja) 2008-12-17
EP1475795B1 (en) 2012-10-10
TW200302874A (en) 2003-08-16
US20050084799A1 (en) 2005-04-21
KR100584777B1 (ko) 2006-05-29
TWI293067B (enExample) 2008-02-01
CN1620692A (zh) 2005-05-25
US7279211B2 (en) 2007-10-09
EP1475795A1 (en) 2004-11-10
KR20040078694A (ko) 2004-09-10
WO2003069612A1 (fr) 2003-08-21
EP1475795A4 (en) 2007-07-25

Similar Documents

Publication Publication Date Title
CN1296924C (zh) 以硫化锌作为主成分的溅射靶、使用所述靶形成有以硫化锌作为主成分的相变型光盘保护膜的光记录介质、以及所述溅射靶的制造方法
JP4730204B2 (ja) 酸化物焼結体ターゲット、及びそれを用いた酸化物透明導電膜の製造方法
JP2009062618A (ja) スパッタリングターゲット、光情報記録媒体用薄膜及びその製造方法
CN100340698C (zh) 溅射靶及光信息记录介质及其制造方法
CN1209490C (zh) ZnS－SiO2溅射靶及使用该靶而形成了ZnS－SiO2相变化型光盘保护膜的光记录介质
CN1756858A (zh) 溅射靶及其制造方法和光信息记录介质用薄膜及其制造方法
CN1918318A (zh) 溅射靶和光信息记录介质及其制造方法
CN1235213C (zh) ZnS－SiO2溅射靶及使用该靶形成了ZnS－SiO2相变化型光盘保护膜的光记录媒体
CN1745191A (zh) Ge－Cr合金溅射靶及其制造方法
JP4817137B2 (ja) スパッタリングターゲット及び光記録媒体
CN1223699C (zh) 溅射靶及其制造方法
JP4524577B2 (ja) 透明導電膜およびスパッタリングターゲット
JP4642833B2 (ja) 硫化亜鉛を主成分とするスパッタリングターゲットを使用して硫化亜鉛を主成分とする相変化型光ディスク保護膜を形成した光記録媒体
CN1295375C (zh) 用于形成相变化型光盘保护膜的溅射靶及使用该靶形成了相变化型光盘保护膜的光记录媒体
JP5019343B2 (ja) スパッタリングターゲット用ＺｎＳ粉末及びスパッタリングターゲット
CN1681959A (zh) 溅射靶及光记录介质
JP4965524B2 (ja) スパッタリングターゲット及びその製造方法
JP5134040B2 (ja) スパッタリングターゲット用ＺｎＳ粉末及びスパッタリングターゲット
JP4807679B2 (ja) スパッタリングターゲット焼結用粉末
TW201326082A (zh) 氧化物燒結體及其製造方法，以及氧化物透明導電膜
CN1578850A (zh) 用来形成光记录媒体保护膜的溅射靶和该靶的制造方法以及用该靶形成保护膜的光记录媒体

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: JX NIPPON MINING + METALS CORPORATION

Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD.

CP03 Change of name, title or address

Address after: Tokyo, Japan

Patentee after: JX Nippon Mining & Metals Corp.

Address before: Tokyo, Japan

Patentee before: Nippon Mining & Metals Co.,Ltd.

CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan

Patentee after: JX NIPPON MINING & METALS Corp.

Address before: Tokyo, Japan

Patentee before: JX Nippon Mining & Metals Corp.

CP01 Change in the name or title of a patent holder
CX01 Expiry of patent term

Granted publication date: 20070124

CX01 Expiry of patent term