CN1756858A - 溅射靶及其制造方法和光信息记录介质用薄膜及其制造方法 - Google Patents
溅射靶及其制造方法和光信息记录介质用薄膜及其制造方法 Download PDFInfo
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- CN1756858A CN1756858A CNA2004800059781A CN200480005978A CN1756858A CN 1756858 A CN1756858 A CN 1756858A CN A2004800059781 A CNA2004800059781 A CN A2004800059781A CN 200480005978 A CN200480005978 A CN 200480005978A CN 1756858 A CN1756858 A CN 1756858A
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 45
- 230000003287 optical effect Effects 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 40
- 239000010409 thin film Substances 0.000 title claims description 14
- 230000008569 process Effects 0.000 title description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 166
- 239000011787 zinc oxide Substances 0.000 claims abstract description 83
- 150000001875 compounds Chemical class 0.000 claims abstract description 39
- 238000004544 sputter deposition Methods 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 239000002245 particle Substances 0.000 claims abstract description 17
- 239000011701 zinc Substances 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 66
- 239000010408 film Substances 0.000 claims description 53
- 238000005245 sintering Methods 0.000 claims description 12
- 238000001354 calcination Methods 0.000 claims description 11
- 239000005083 Zinc sulfide Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000428 dust Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910052798 chalcogen Inorganic materials 0.000 abstract 1
- 150000001787 chalcogens Chemical class 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 19
- 239000010410 layer Substances 0.000 description 17
- 238000002425 crystallisation Methods 0.000 description 15
- 230000008025 crystallization Effects 0.000 description 15
- 239000011241 protective layer Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000002156 mixing Methods 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 239000011135 tin Substances 0.000 description 10
- 239000011651 chromium Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000007731 hot pressing Methods 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000003595 mist Substances 0.000 description 6
- 201000008827 tuberculosis Diseases 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000009775 high-speed stirring Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910017488 Cu K Inorganic materials 0.000 description 2
- 229910017541 Cu-K Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000803 paradoxical effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- UAQYANPRBLICHN-UHFFFAOYSA-N zinc dioxosilane sulfide Chemical compound [Si](=O)=O.[S-2].[Zn+2] UAQYANPRBLICHN-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/082—Oxides of alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B2007/2581—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
例 | 组成(成分比) | 密度(%) | DC溅射 | 折射率 | 非晶质性 |
实施例1 | ZnS∶In1.0Al1.0O3(ZnO)3=70∶30体积% | 92 | ○ | 2.2 | 1.6 |
实施例2 | ZnS∶In1.2Al0.8O3(ZnO)4=65∶35体积% | 90 | ○ | 2.1 | 1.5 |
实施例3 | ZnS∶In1.1Ga0.9O3(ZnO)4.2=70∶30体积% | 95 | ○ | 2.2 | 1.0 |
实施例4 | ZnS∶In1.0Ga1.0O3(ZnO)7=70∶30体积% | 94 | ○ | 2.2 | 1.1 |
实施例5 | ZnS∶In1.5Fe0.5O3(ZnO)2=75∶25体积% | 90 | ○ | 2.5 | 1.4 |
实施例6 | ZnS∶In1.0Sn1.0O3.5(ZnO)4=70∶30体积% | 93 | ○ | 2.3 | 1.1 |
实施例7 | ZnS∶In1.0Al0.5Ga0.5O3(ZnO)5=65∶35体积% | 92 | ○ | 2.2 | 1.2 |
比较例1 | ZnS∶In0.5Al1.5O3(ZnO)0.8=70∶30体积% | 92 | ○ | 2.2 | 9.0 |
比较例2 | ZnS∶In1.0Al1.0O3(ZnO)3=90∶10体积% | 83 | × | 2.1 | 2.5 |
比较例3 | ZnS∶In0.2Ga1.8O3(ZnO)0.5=70∶30体积% | 82 | ○ | 2.2 | 5.2 |
比较例4 | ZnS∶Fe1.0Al1.0O3(ZnO)0.25=70∶30体积% | 90 | ○ | 2.5 | 7.0 |
例 | 组成(重量%) | 密度(%) | 体电阻(Ωcm) |
实施例8 | In:8.2,8.2,8.3Al:2.9,2.9,2.8 | 92.0,92.4,92.5 | 0.021,0.022,0.025,0.019,0.023 |
实施例9 | In:8.1,8.0,8.0Ga:4.8,4.9,4.8 | 92.8,93.5,93.1 | 0.021,0.022,0.025,0.019,0.023 |
实施例10 | In:8.4,8.2,8.3Sn:4.3,4.2,4.2 | 90.8,91.2,91.4 | 0.034,0.037,0.028,0.030,0.032 |
实施例11 | In:12.2,12.1,11.9Cr:0.6,0.5,0.6 | 94.3,94.0,93.9 | 0.042,0.048,0.051,0.038,0.037 |
比较例5 | In:8.6,8.1,8.0Al:2.4,2.5,3.0 | 80.0,82.4,85.5 | 0.35,1.32,1.54,0.98,0.64 |
比较例6 | In:15.0,15.9,14.2Ga:9.2,9.3,8.7 | 75.2,80.7,80.1 | 0.2,2.5,0.4,3.0,0.7 |
Claims (17)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP056911/2003 | 2003-03-04 | ||
JP056935/2003 | 2003-03-04 | ||
JP2003056935 | 2003-03-04 | ||
JP2003056911 | 2003-03-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1756858A true CN1756858A (zh) | 2006-04-05 |
CN100476017C CN100476017C (zh) | 2009-04-08 |
Family
ID=32964880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800059781A Expired - Lifetime CN100476017C (zh) | 2003-03-04 | 2004-02-03 | 溅射靶及其制造方法和光信息记录介质用薄膜及其制造方法 |
Country Status (6)
Country | Link |
---|---|
EP (2) | EP1602746B1 (zh) |
JP (2) | JP3768230B2 (zh) |
KR (1) | KR100673263B1 (zh) |
CN (1) | CN100476017C (zh) |
TW (2) | TW200802359A (zh) |
WO (1) | WO2004079037A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101473417B (zh) * | 2006-06-29 | 2011-10-12 | Ips股份有限公司 | 沉积用于相变存储器的硫族化物膜的方法 |
CN103748055A (zh) * | 2012-07-09 | 2014-04-23 | 吉坤日矿日石金属株式会社 | 导电性氧化物烧结体及其制造方法 |
WO2019134394A1 (en) * | 2018-01-03 | 2019-07-11 | Boe Technology Group Co., Ltd. | Oxide semiconductor composition, manufacturing method thereof, thin film transistor and display apparatus |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4697404B2 (ja) * | 2005-04-18 | 2011-06-08 | 三菱マテリアル株式会社 | 光記録媒体保護膜形成用スパッタリングターゲット |
KR20080021111A (ko) | 2005-06-23 | 2008-03-06 | 닛코킨조쿠 가부시키가이샤 | 스퍼터링 타겟트 및 광 정보기록매체용 박막 |
JP2007119289A (ja) * | 2005-10-27 | 2007-05-17 | Idemitsu Kosan Co Ltd | 酸化物粒子、焼結体及びそれらの製造方法 |
WO2007083837A1 (en) * | 2006-01-23 | 2007-07-26 | Ricoh Company, Ltd. | Optical recording medium |
US8075974B2 (en) | 2006-03-10 | 2011-12-13 | Ricoh Company, Ltd. | Optical recording medium |
JP4697441B2 (ja) * | 2006-03-31 | 2011-06-08 | 三菱マテリアル株式会社 | 光記録媒体保護膜形成用スパッタリングターゲットの製造方法 |
JP5246777B2 (ja) * | 2006-07-27 | 2013-07-24 | Jx日鉱日石金属株式会社 | リチウム含有遷移金属酸化物ターゲット及びその製造方法並びにリチウムイオン薄膜二次電池 |
TWI582255B (zh) * | 2013-08-14 | 2017-05-11 | 光洋應用材料科技股份有限公司 | 用於光儲存媒體的介電濺鍍靶材及介電層 |
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JP2695605B2 (ja) | 1992-12-15 | 1998-01-14 | 出光興産株式会社 | ターゲットおよびその製造方法 |
JP4092764B2 (ja) * | 1998-03-13 | 2008-05-28 | 住友金属鉱山株式会社 | ZnO系焼結体 |
JP2000026119A (ja) | 1998-07-09 | 2000-01-25 | Hoya Corp | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP3533333B2 (ja) * | 1998-08-21 | 2004-05-31 | Tdk株式会社 | 光記録媒体の干渉膜用スパッタリングターゲットおよびその製造方法 |
JP2000195101A (ja) * | 1998-12-28 | 2000-07-14 | Japan Energy Corp | 光ディスク保護膜及び同保護膜形成用スパッタリングタ―ゲット |
JP4560149B2 (ja) * | 1999-03-05 | 2010-10-13 | 出光興産株式会社 | 透明導電材料、透明導電ガラス及び透明導電フィルム |
JP3894403B2 (ja) * | 1999-07-01 | 2007-03-22 | 日鉱金属株式会社 | 光ディスク保護膜形成スパッタリングターゲット |
JP3915109B2 (ja) * | 1999-09-28 | 2007-05-16 | 三菱マテリアル株式会社 | 光記録媒体保護層形成用スパッタリングターゲット材 |
JP2001316804A (ja) * | 2000-05-08 | 2001-11-16 | Mitsubishi Materials Corp | 直流スパッタリング可能でかつ異常放電の少ない光記録保護膜形成用スパッタリングターゲット |
JP2002161359A (ja) * | 2000-11-22 | 2002-06-04 | Mitsubishi Materials Corp | 高出力スパッタ条件ですぐれた耐割損性を発揮する光記録媒体保護層形成用スパッタリングターゲット焼結材 |
JP2003099995A (ja) * | 2001-09-26 | 2003-04-04 | Ulvac Japan Ltd | 光ディスク用誘電体ターゲット及び成膜方法 |
JP4198918B2 (ja) * | 2002-02-14 | 2008-12-17 | 日鉱金属株式会社 | 硫化亜鉛を主成分とするスパッタリングターゲット及び該スパッタリングターゲットの製造方法 |
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2004
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101473417B (zh) * | 2006-06-29 | 2011-10-12 | Ips股份有限公司 | 沉积用于相变存储器的硫族化物膜的方法 |
CN103748055A (zh) * | 2012-07-09 | 2014-04-23 | 吉坤日矿日石金属株式会社 | 导电性氧化物烧结体及其制造方法 |
CN103748055B (zh) * | 2012-07-09 | 2017-10-13 | 吉坤日矿日石金属株式会社 | 导电性氧化物烧结体及其制造方法 |
WO2019134394A1 (en) * | 2018-01-03 | 2019-07-11 | Boe Technology Group Co., Ltd. | Oxide semiconductor composition, manufacturing method thereof, thin film transistor and display apparatus |
Also Published As
Publication number | Publication date |
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WO2004079037A1 (ja) | 2004-09-16 |
KR100673263B1 (ko) | 2007-01-22 |
TWI301157B (zh) | 2008-09-21 |
TW200802359A (en) | 2008-01-01 |
EP1602746A4 (en) | 2006-07-05 |
KR20050102146A (ko) | 2005-10-25 |
TW200417618A (en) | 2004-09-16 |
CN100476017C (zh) | 2009-04-08 |
EP1602746B1 (en) | 2008-10-08 |
JP3768230B2 (ja) | 2006-04-19 |
JP2006152443A (ja) | 2006-06-15 |
EP1602746A1 (en) | 2005-12-07 |
JPWO2004079037A1 (ja) | 2006-06-08 |
JP4260801B2 (ja) | 2009-04-30 |
EP2006412A1 (en) | 2008-12-24 |
TWI336472B (zh) | 2011-01-21 |
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