SG96200A1 - Semiconductor integrated circuit device and method of manufacturing the same - Google Patents

Semiconductor integrated circuit device and method of manufacturing the same

Info

Publication number
SG96200A1
SG96200A1 SG200100859A SG200100859A SG96200A1 SG 96200 A1 SG96200 A1 SG 96200A1 SG 200100859 A SG200100859 A SG 200100859A SG 200100859 A SG200100859 A SG 200100859A SG 96200 A1 SG96200 A1 SG 96200A1
Authority
SG
Singapore
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
connecting member
manufacturing
Prior art date
Application number
SG200100859A
Other languages
English (en)
Inventor
Miyaki Yoshinori
Suzuki Hiromichi
Kaneda Tsuyoshi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG96200A1 publication Critical patent/SG96200A1/en

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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15763—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550 C
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    • H01L2924/30—Technical effects
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    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
SG200100859A 2000-02-18 2001-02-16 Semiconductor integrated circuit device and method of manufacturing the same SG96200A1 (en)

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US20010018264A1 (en) 2001-08-30
KR100780207B1 (ko) 2007-11-27
US7176056B2 (en) 2007-02-13
KR20010082736A (ko) 2001-08-30
CN1312748C (zh) 2007-04-25
KR100750012B1 (ko) 2007-08-16
CN101013682A (zh) 2007-08-08
CN100440493C (zh) 2008-12-03
CN101013683A (zh) 2007-08-08
CN1309425A (zh) 2001-08-22
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EP2028684A2 (en) 2009-02-25
US20040245607A1 (en) 2004-12-09
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US20030067067A1 (en) 2003-04-10
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US20010015481A1 (en) 2001-08-23
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US6891253B2 (en) 2005-05-10
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US20090014855A1 (en) 2009-01-15
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MY124877A (en) 2006-07-31
US7038306B2 (en) 2006-05-02
CN100380650C (zh) 2008-04-09
TW504827B (en) 2002-10-01
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US7397114B2 (en) 2008-07-08
US20060138617A1 (en) 2006-06-29

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