SG162654A1 - Method for bonding two substrates - Google Patents

Method for bonding two substrates

Info

Publication number
SG162654A1
SG162654A1 SG200906052-6A SG2009060526A SG162654A1 SG 162654 A1 SG162654 A1 SG 162654A1 SG 2009060526 A SG2009060526 A SG 2009060526A SG 162654 A1 SG162654 A1 SG 162654A1
Authority
SG
Singapore
Prior art keywords
bonding
substrates
steps
processed
applying
Prior art date
Application number
SG200906052-6A
Other languages
English (en)
Inventor
Arnaud Castex
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG162654A1 publication Critical patent/SG162654A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Adhesives Or Adhesive Processes (AREA)
SG200906052-6A 2008-12-22 2009-09-11 Method for bonding two substrates SG162654A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08291226A EP2200077B1 (en) 2008-12-22 2008-12-22 Method for bonding two substrates

Publications (1)

Publication Number Publication Date
SG162654A1 true SG162654A1 (en) 2010-07-29

Family

ID=40674178

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200906052-6A SG162654A1 (en) 2008-12-22 2009-09-11 Method for bonding two substrates

Country Status (7)

Country Link
US (2) US20100155882A1 (zh)
EP (1) EP2200077B1 (zh)
JP (1) JP5453647B2 (zh)
KR (1) KR20100073974A (zh)
CN (1) CN101764052B (zh)
SG (1) SG162654A1 (zh)
TW (1) TWI402170B (zh)

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FR2964193A1 (fr) 2010-08-24 2012-03-02 Soitec Silicon On Insulator Procede de mesure d'une energie d'adhesion, et substrats associes
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WO2024157663A1 (ja) * 2023-01-27 2024-08-02 日本碍子株式会社 接合体の製造方法および接合方法

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Also Published As

Publication number Publication date
EP2200077A1 (en) 2010-06-23
US20100155882A1 (en) 2010-06-24
EP2200077B1 (en) 2012-12-05
US20120322229A1 (en) 2012-12-20
JP5453647B2 (ja) 2014-03-26
TWI402170B (zh) 2013-07-21
JP2010149180A (ja) 2010-07-08
CN101764052A (zh) 2010-06-30
CN101764052B (zh) 2013-01-23
TW201024090A (en) 2010-07-01
KR20100073974A (ko) 2010-07-01

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