FR2938202B1 - Traitement de surface pour adhesion moleculaire - Google Patents

Traitement de surface pour adhesion moleculaire

Info

Publication number
FR2938202B1
FR2938202B1 FR0857586A FR0857586A FR2938202B1 FR 2938202 B1 FR2938202 B1 FR 2938202B1 FR 0857586 A FR0857586 A FR 0857586A FR 0857586 A FR0857586 A FR 0857586A FR 2938202 B1 FR2938202 B1 FR 2938202B1
Authority
FR
France
Prior art keywords
surface treatment
molecular adhesion
adhesion
molecular
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0857586A
Other languages
English (en)
Other versions
FR2938202A1 (fr
Inventor
Arnaud Castex
Gweltaz Gaudin
Marcel Broekaart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0857586A priority Critical patent/FR2938202B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to EP09740335A priority patent/EP2362860A1/fr
Priority to PCT/EP2009/064121 priority patent/WO2010052151A1/fr
Priority to KR1020117008780A priority patent/KR20110085990A/ko
Priority to US13/122,717 priority patent/US8202785B2/en
Priority to CN2009801445160A priority patent/CN102209692A/zh
Priority to TW098137770A priority patent/TW201023253A/zh
Publication of FR2938202A1 publication Critical patent/FR2938202A1/fr
Application granted granted Critical
Publication of FR2938202B1 publication Critical patent/FR2938202B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Element Separation (AREA)
FR0857586A 2008-11-07 2008-11-07 Traitement de surface pour adhesion moleculaire Expired - Fee Related FR2938202B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0857586A FR2938202B1 (fr) 2008-11-07 2008-11-07 Traitement de surface pour adhesion moleculaire
PCT/EP2009/064121 WO2010052151A1 (fr) 2008-11-07 2009-10-27 Traitement de surface pour liaison moléculaire
KR1020117008780A KR20110085990A (ko) 2008-11-07 2009-10-27 분자 결합을 위한 표면 처리
US13/122,717 US8202785B2 (en) 2008-11-07 2009-10-27 Surface treatment for molecular bonding
EP09740335A EP2362860A1 (fr) 2008-11-07 2009-10-27 Traitement de surface pour liaison moléculaire
CN2009801445160A CN102209692A (zh) 2008-11-07 2009-10-27 用于分子结合的表面处理
TW098137770A TW201023253A (en) 2008-11-07 2009-11-06 Surface treatment for molecular bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0857586A FR2938202B1 (fr) 2008-11-07 2008-11-07 Traitement de surface pour adhesion moleculaire

Publications (2)

Publication Number Publication Date
FR2938202A1 FR2938202A1 (fr) 2010-05-14
FR2938202B1 true FR2938202B1 (fr) 2010-12-31

Family

ID=40941355

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0857586A Expired - Fee Related FR2938202B1 (fr) 2008-11-07 2008-11-07 Traitement de surface pour adhesion moleculaire

Country Status (7)

Country Link
US (1) US8202785B2 (fr)
EP (1) EP2362860A1 (fr)
KR (1) KR20110085990A (fr)
CN (1) CN102209692A (fr)
FR (1) FR2938202B1 (fr)
TW (1) TW201023253A (fr)
WO (1) WO2010052151A1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2965974B1 (fr) * 2010-10-12 2013-11-29 Soitec Silicon On Insulator Procédé de collage moléculaire de substrats en silicium et en verre
US9540545B2 (en) 2011-09-02 2017-01-10 Schlumberger Technology Corporation Plasma treatment in fabricating directional drilling assemblies
FR2987166B1 (fr) 2012-02-16 2017-05-12 Soitec Silicon On Insulator Procede de transfert d'une couche
FR3002078B1 (fr) 2013-02-11 2015-03-27 Commissariat Energie Atomique Procede de realisation d'une couche semi-conductrice presentant au moins deux epaisseurs differentes
FR3002079B1 (fr) 2013-02-11 2016-09-09 Commissariat Energie Atomique Procede de fabrication d'un transistor
FR3002080B1 (fr) 2013-02-11 2015-03-27 Commissariat Energie Atomique Procede de fabrication d'un transistor
FR3007576B1 (fr) * 2013-06-19 2015-07-10 Soitec Silicon On Insulator Procede de transfert d'une couche de circuits.
US9786633B2 (en) 2014-04-23 2017-10-10 Massachusetts Institute Of Technology Interconnect structures for fine pitch assembly of semiconductor structures and related techniques
US10079224B2 (en) 2014-08-11 2018-09-18 Massachusetts Institute Of Technology Interconnect structures for assembly of semiconductor structures including at least one integrated circuit structure
WO2016118209A2 (fr) 2014-11-05 2016-07-28 Massachusetts Institute Of Technology Dispositifs à semi-conducteur multicouche fabriqués à l'aide d'une combinaison d'un substrat et de structures de trou d'interconnexion, et techniques de fabrication
FR3028664B1 (fr) * 2014-11-14 2016-11-25 Soitec Silicon On Insulator Procede de separation et de transfert de couches
WO2017015432A1 (fr) 2015-07-23 2017-01-26 Massachusetts Institute Of Technology Circuit intégré supraconducteur
US10134972B2 (en) 2015-07-23 2018-11-20 Massachusetts Institute Of Technology Qubit and coupler circuit structures and coupling techniques
CN106409650B (zh) * 2015-08-03 2019-01-29 沈阳硅基科技有限公司 一种硅片直接键合方法
US10121754B2 (en) 2015-11-05 2018-11-06 Massachusetts Institute Of Technology Interconnect structures and methods for fabricating interconnect structures
US10242968B2 (en) 2015-11-05 2019-03-26 Massachusetts Institute Of Technology Interconnect structure and semiconductor structures for assembly of cryogenic electronic packages
WO2018056965A1 (fr) * 2016-09-21 2018-03-29 Massachusetts Institute Of Technology Structure semi-conductrice multicouche et procédés de fabrication de structures semi-conductrices multicouches
US10586909B2 (en) 2016-10-11 2020-03-10 Massachusetts Institute Of Technology Cryogenic electronic packages and assemblies
US10727219B2 (en) * 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
US20210238087A1 (en) * 2018-08-02 2021-08-05 Byd Company Limited Glass composite, casing, display device and terminal device
US10978508B2 (en) 2018-10-16 2021-04-13 L3 Cincinnati Electronics Corporation Infrared detector having a directly bonded silicon substrate present on top thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500694B1 (en) 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
TW473942B (en) * 2000-07-14 2002-01-21 Slight Opto Eletronics Co Ltd Structural integration of image sensor
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
JP2004186226A (ja) 2002-11-29 2004-07-02 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの製造方法
US7250114B2 (en) 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
DE10355728B4 (de) * 2003-11-28 2006-04-13 X-Fab Semiconductor Foundries Ag Verbinden von Halbleiterscheiben gleichen Durchmessers zum Erhalt einer gebondeten Scheibenanordnung
WO2006035864A1 (fr) * 2004-09-30 2006-04-06 Shin-Etsu Handotai Co., Ltd. Méthode de nettoyage d’une tranche soi
US7232759B2 (en) * 2004-10-04 2007-06-19 Applied Materials, Inc. Ammonium hydroxide treatments for semiconductor substrates
WO2006082751A2 (fr) 2005-02-02 2006-08-10 Asahi Glass Company, Limited Procede de polissage de substrat en verre
US7601271B2 (en) * 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
EP2200077B1 (fr) * 2008-12-22 2012-12-05 Soitec Procédé pour la liaison de deux substrats

Also Published As

Publication number Publication date
KR20110085990A (ko) 2011-07-27
CN102209692A (zh) 2011-10-05
TW201023253A (en) 2010-06-16
FR2938202A1 (fr) 2010-05-14
EP2362860A1 (fr) 2011-09-07
US20110189834A1 (en) 2011-08-04
WO2010052151A1 (fr) 2010-05-14
US8202785B2 (en) 2012-06-19

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Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120907

ST Notification of lapse

Effective date: 20140731