SG151269A1 - Resin composition and semiconductor device produced by using the same - Google Patents

Resin composition and semiconductor device produced by using the same

Info

Publication number
SG151269A1
SG151269A1 SG200901751-8A SG2009017518A SG151269A1 SG 151269 A1 SG151269 A1 SG 151269A1 SG 2009017518 A SG2009017518 A SG 2009017518A SG 151269 A1 SG151269 A1 SG 151269A1
Authority
SG
Singapore
Prior art keywords
resin composition
formula
semiconductor device
same
device produced
Prior art date
Application number
SG200901751-8A
Other languages
English (en)
Inventor
Hikaru Okubo
Nobuki Tanaka
Itaru Watanabe
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of SG151269A1 publication Critical patent/SG151269A1/en

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    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52—Amides or imides
    • C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • C08F220/58—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing oxygen in addition to the carbonamido oxygen, e.g. N-methylolacrylamide, N-(meth)acryloylmorpholine
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    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
SG200901751-8A 2004-03-19 2005-03-16 Resin composition and semiconductor device produced by using the same SG151269A1 (en)

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MY (2) MY151958A (ja)
SG (1) SG151269A1 (ja)
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CN101724354A (zh) 2010-06-09
EP1736520A1 (en) 2006-12-27
TWI359835B (en) 2012-03-11
EP2647686A2 (en) 2013-10-09
EP2647686A3 (en) 2013-10-30
US20130109798A1 (en) 2013-05-02
CN102618213B (zh) 2015-05-20
WO2005090510A1 (ja) 2005-09-29
JP4967655B2 (ja) 2012-07-04
EP1736520B1 (en) 2014-04-30
CN102604591A (zh) 2012-07-25
MY158898A (en) 2016-11-30
MY151958A (en) 2014-07-31
CN102604592A (zh) 2012-07-25
US8853312B2 (en) 2014-10-07
KR101223948B1 (ko) 2013-01-18
KR20070005661A (ko) 2007-01-10
CN102618213A (zh) 2012-08-01
CN101724354B (zh) 2014-07-09
CN1930263B (zh) 2012-02-29
CN102585760A (zh) 2012-07-18
JPWO2005090510A1 (ja) 2008-01-31
US20120068106A1 (en) 2012-03-22
US20070213467A1 (en) 2007-09-13
TW200536884A (en) 2005-11-16
EP1736520A4 (en) 2011-02-16
US8088308B2 (en) 2012-01-03
US8614270B2 (en) 2013-12-24
CN1930263A (zh) 2007-03-14

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