TWI540590B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI540590B
TWI540590B TW101118817A TW101118817A TWI540590B TW I540590 B TWI540590 B TW I540590B TW 101118817 A TW101118817 A TW 101118817A TW 101118817 A TW101118817 A TW 101118817A TW I540590 B TWI540590 B TW I540590B
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Taiwan
Prior art keywords
metal particles
resin
particles
meth
semiconductor device
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TW101118817A
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English (en)
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TW201250711A (en
Inventor
金森直哉
原田隆博
青木千晶
村山龍一
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住友電木股份有限公司
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Publication of TW201250711A publication Critical patent/TW201250711A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
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    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
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Description

半導體裝置
本發明係關於一種使用樹脂糊(resin paste)而製作之半導體裝置。
本申請案係基於2011年5月31日在日本提出申請之日本專利特願2011-121444號且主張其優先權，並將其內容引用於本文中。
半導體裝置中，半導體元件係經由接著層而固定於引線框架(lead frame)或基板等基材上。此種接著層除了接著性以外，亦要求具有導電性或導熱性，已知可利用含有銀粒子之樹脂糊而形成。例如，於專利文獻1、2中，記載有利用含有銀粒子之樹脂糊而形成上述之接著層。
[專利文獻]
[專利文獻1]日本專利特開平7-118616號公報
[專利文獻2]日本專利特開平5-89721號公報
但是，此種樹脂糊為了獲得所需之導電性或導熱性，必須含有大量之銀粒子。銀粒子與樹脂成分相比較比重較大，故而容易於使用期間或放置期間產生沈降。因此，含有大量銀粒子之樹脂糊之塗布作業性較差，有時無法穩定地獲得具有所需之導電性或導熱性的接著層。
專利文獻1中認為藉由在將銀粒子分散於熱硬化性樹脂中的樹脂糊中，含有平均粒徑0.1~1.0 μm之球狀二氧化 矽，可抑制銀粒子之沈降。但是，由於球狀二氧化矽為絕緣性，故而將其含於接著層中時，存在著導電性惡化之情形。
另外，專利文獻2中認為藉由在將銀粒子分散於熱硬化性樹脂中的樹脂糊中，含有控制成與接著層之膜厚大致相同之粒徑且分布之範圍較小的球狀二氧化矽，可將接著層控制為固定之膜厚。但是，與專利文獻1同樣，由於球狀二氧化矽為絕緣性，故而將其含於接著層中時，存在著導電性惡化之情形。
本發明係有鑒於上述問題而成者，本發明之課題係提供一種導電性良好之半導體裝置。
本發明者等人有鑒於上述狀況而努力研究，結果發現滿足以下條件之接著層表現出良好之導電性，從而完成本發明。
亦即，根據本發明，係提供一種半導體裝置，其具備：基材、半導體元件、及存在於上述基材與上述半導體元件之間以接著兩者之接著層；上述接著層中分散有金屬粒子及絕緣粒子，上述金屬粒子包含鱗片形狀或橢圓球形狀，且當將上述接著層中之上述金屬粒子之體積含有率設為a，上述接著層中之上述絕緣粒子之體積含有率設為b時，上述接著層中之填料之體積含有率(a+b)為0.20以上0.50以下， 上述填料中之上述金屬粒子之體積含有率a/(a+b)為0.03以上0.70以下。
滿足上述條件之接著層表現出良好之導電性的理由並不明確，可考慮如下理由。若接著層中之填料之體積含有率(a+b)在上述範圍內，則接著層表面之平滑性優異，故接著層與基材或半導體元件之接觸電阻減小，接著層之界面之導電性提高。
進而，若填料中之金屬粒子之體積含有率a/(a+b)在上述範圍內，則產生絕緣粒子之部分集合體，藉由該集合體，鱗片形狀或橢圓球形狀之金屬粒子之長軸相對於重力方向平行地排列。另外，於無該集合體之部分，金屬粒子相對於重力方向垂直地排列。因此，藉由絕緣粒子之集合體，產生金屬粒子之垂直方向及水平方向之接觸部分。故推測，當接著層滿足上述條件時，於接著層之膜厚方向上可實現良好之導電性。
根據本發明，係提供一種導電性良好之半導體裝置。
以下，使用圖式說明本發明之實施形態。再者，於所有圖式中，對相同構成要素標附相同符號且適宜省略說明。
(半導體裝置)
首先，對本實施形態之半導體裝置之構成進行說明。圖1係表示本實施形態之半導體裝置10之構成的剖面圖。
本實施形態之半導體裝置10具備：基材2、半導體元件3、及存在於基材2與半導體元件3之間以接著兩者之接著層1。
接著層1係藉由以半導體元件3與基材2壓接含有鱗片形狀或橢圓球形狀之金屬粒子、絕緣粒子的糊狀之樹脂組成物(以下，亦稱為樹脂糊)而形成，於所獲得之接著層1中，分散有鱗片形狀或橢圓球形狀之金屬粒子、及絕緣粒子。
本實施形態中之接著層1中，當將接著層1中之金屬粒子之體積含有率設為a，絕緣粒子之體積含有率設為b時，填料之體積含有率(a+b)為0.20以上0.50以下，較佳為0.25以上0.45以下，更佳為0.30以上0.40以下。於此，所謂接著層1中之填料，表示金屬粒子及絕緣粒子。若為該下限值以上，則可抑制接著層1中之填料於膜厚方向上之分布不均，接著層1與基材2或半導體元件3之接觸電阻減小。
另外，若為該上限值以下，則接著層1之界面之平滑性優異，接著層1與基材2或半導體元件3之接觸電阻減小。
另外，本實施形態中之接著層1中，填料中之金屬粒子之體積含有率a/(a+b)為0.03以上0.70以下，較佳為0.05以上0.65以下，更佳為0.10以上0.60以下。若為該下限值以上，則可於膜厚方向上形成金屬粒子之導電網路。
進而，若為該上限值以下，則產生絕緣粒子之部分集合體，藉由該集合體，鱗片形狀或橢圓球形狀之金屬粒子之長軸相對於重力方向平行地排列。另外，於無該集合體之部分，金屬粒子相對於重力方向垂直地排列。因此，藉由絕緣粒子之集合體，可產生金屬粒子之垂直方向及水平方向之接觸部分，從而於接著層1之膜厚方向上高效率地 形成導電網路。
因此，滿足上述條件之接著層1可於接著層之膜厚方向上實現良好之導電性。
體積含有率a及b分別為用金屬粒子及絕緣粒子在接著層1中所佔之體積除以接著層整體之體積所得的值，可藉由下述式(1)及式(2)而分別算出。
體積含有率a=(金屬粒子所佔之體積)/[(金屬粒子所佔之體積)+(絕緣粒子所佔之體積)+(樹脂成分所佔之體積)] (1)
體積含有率b=(絕緣粒子所佔之體積)/[(金屬粒子所佔之體積)+(絕緣粒子所佔之體積)+(樹脂成分所佔之體積)] (2)
於此，所謂樹脂成分，表示接著層1中除金屬粒子及絕緣粒子以外之成分。
樹脂成分所佔之體積可由金屬粒子及絕緣粒子以外之重量與比重而算出。關於樹脂成分之比重，係使用利用不含填料之樹脂糊製作接著層時該接著層之比重作為樹脂成分之比重。另外，金屬粒子所佔之體積及絕緣粒子所佔之體積亦同樣地由重量及真比重(true specific gravity)而算出。
於此，接著層樹脂成分之比重可利用浮力式密度比重計進行測定。另外，金屬粒子及絕緣粒子之真比重可使用公知文獻的數值。其中，當金屬粒子及絕緣粒子之真比重未記載於公知文獻中時，例如可將其等與比重已知之液體混合，以振動式密度比重計測定混合物之比重，且計算其重量與體積之關係而算出。
接著層1之厚度並無特別限定，較佳為5 μm以上50 μm 以下，更佳為10 μm以上40 μm以下。藉由設為下限值以上，可更進一步發揮接著強度。另外，藉由設為上限值以下，可更進一步提高導電性及導熱性。
基材2並無特別限定，可列舉：42合金引線框架、銅引線框架等引線框架，玻璃環氧基板(包含玻璃纖維強化環氧樹脂之基板)、BT基板(使用包含氰酸酯單體及其低聚物與雙順丁烯二醯亞胺之BT樹脂(bismaleimide triazine resin，雙順丁烯二醯亞胺三嗪樹脂)之基板)等有機基板，其他半導體元件，半導體晶圓，間隔片(spacer)等。該等中，較佳為可更有效果地發揮出接著層1之導電性或導熱性的引線框架、有機基板。進而，有機基板較佳為BGA(Ball Grid Array，球形陣列)基板。
半導體元件3並無特別限定，例如，較佳為可更有效果地發揮出接著層1之導電性或導熱性的消耗電力1.7 W以上之功率元件。半導體元件3經由焊墊7及接合線6而與引線4電性連接。另外，半導體元件3之周圍由密封材料層5密封。
(樹脂糊)
其次，就形成接著層1之樹脂糊進行說明。本實施形態中之樹脂糊含有(A)熱硬化性樹脂、(B)金屬粒子、(C)絕緣粒子。
(熱硬化性樹脂)
(A)熱硬化性樹脂係藉由加熱而形成立體網狀結構的普通熱硬化性樹脂。該(A)熱硬化性樹脂並無特別限定，較佳為形成液狀樹脂組成物之材料，較理想為於室溫下為液狀。例如，可列舉氰酸酯樹脂、環氧樹脂、1分子內具有 2個以上自由基聚合性之碳-碳雙鍵之樹脂等。
(A)熱硬化性樹脂之氰酸酯樹脂係分子內具有-NCO基之化合物，且係藉由加熱而-NCO基進行反應從而形成立體網狀結構並硬化之樹脂，係硬化之多官能氰酸酯化合物或其低分子聚合物。作為(A)熱硬化性樹脂之氰酸酯樹脂，並無特別限定，例如可列舉：1,3-二氰氧基苯(1,3-dicyanatobenzene)、1,4-二氰氧基苯、1,3,5-三氰氧基苯、1,3-二氰氧基萘、1,4-二氰氧基萘、1,6-二氰氧基萘、1,8-二氰氧基萘、2,6-二氰氧基萘、2,7-二氰氧基萘、1,3,6-三氰氧基萘、4,4'-二氰氧基聯苯、雙(4-氰氧基苯基)甲烷、雙(3,5-二甲基-4-氰氧基苯基)甲烷、2,2-雙(4-氰氧基苯基)丙烷、2,2-雙(3,5-二溴-4-氰氧基苯基)丙烷、雙(4-氰氧基苯基)醚、雙(4-氰氧基苯基)硫醚、雙(4-氰氧基苯基)碸、三(4-氰氧基苯基)亞磷酸酯、三(4-氰氧基苯基)磷酸酯等反應物，以及藉由酚醛清漆樹脂與鹵化氰之反應而獲得的氰酸酯類等，亦可列舉具有藉由將該等多官能氰酸酯樹脂之氰酸酯基予以三聚合而形成之三嗪環的預聚物。該預聚物可藉由以例如無機酸、路易斯酸等酸，醇鈉、三級胺類等鹼，碳酸鈉等鹽類作為觸媒使上述多官能氰酸酯樹脂單體聚合而獲得。
作為(A)熱硬化性樹脂之氰酸酯樹脂之硬化促進劑，可列舉通常公知者。例如，可列舉辛酸鋅、辛酸錫、環烷酸鈷、環烷酸鋅，乙醯丙酮鐵等有機金屬錯合物，氯化鋁、氯化錫、氯化鋅等金屬鹽，三乙胺、二甲基苄基胺等胺類，但並不限定於該等所列舉者。該等硬化促進劑可單獨使用1種或併用2種以上。
另外，亦可將氰酸酯樹脂與環氧樹脂、氧雜環丁烷樹 脂、1分子內具有2個以上自由基聚合性之碳-碳雙鍵之樹脂等其他樹脂併用。
(A)熱硬化性樹脂之環氧樹脂係分子內具有1個以上縮水甘油基之化合物，且係藉由加熱而縮水甘油基進行反應從而形成立體網狀結構並硬化之化合物。(A)熱硬化性樹脂之環氧樹脂中，縮水甘油基較佳為1分子內含有2個以上，其係由於僅使縮水甘油基為1個之化合物反應是無法顯示出充分之硬化物特性。
(A)熱硬化性樹脂之環氧樹脂中，作為1分子內含有2個以上縮水甘油基之化合物，可列舉：將雙酚A、雙酚F、聯苯酚等雙酚化合物或該等之衍生物，氫化雙酚A、氫化雙酚F、氫化聯苯酚、環己二醇、環己二甲醇、環己二乙醇等具有脂環結構之二醇或該等之衍生物，丁二醇、己二醇、辛二醇、壬二醇、癸二醇等脂肪族二醇或該等之衍生物等環氧化而成之雙官能者；具有三羥苯基甲烷骨架、胺基苯酚骨架之三官能者；將苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、苯酚芳烷基樹脂、聯苯芳烷基樹脂、萘酚芳烷基樹脂等環氧化而成之多官能者等，但並不限定於該等。另外，由於樹脂組成物較佳為於室溫下為液狀，故而(A)熱硬化性樹脂之環氧樹脂較佳為單獨或作為混合物於室溫下為液狀者。作為將二醇或其衍生物環氧化之方法，可列舉：使二醇或其衍生物之2個羥基與表氯醇反應而轉換成縮水甘油醚，藉此進行環氧化之方法等。另外，對於三官能以上者亦同樣。
亦可如通常所進行般使用反應性之稀釋劑。作為反應性之稀釋劑，可列舉：苯基縮水甘油醚、第三丁基苯基縮 水甘油醚、甲苯基縮水甘油醚等單官能之芳香族縮水甘油醚類，脂肪族縮水甘油醚類等。
使用上述(A)熱硬化性樹脂之環氧樹脂作為(A)熱硬化性樹脂時，為使環氧樹脂硬化，而於本實施形態中之樹脂糊中含有硬化劑。
作為(A)熱硬化性樹脂之環氧樹脂之硬化劑，例如可列舉：脂肪族胺、芳香族胺、二氰二胺、二醯肼化合物、酸酐、酚樹脂等。
作為(A)熱硬化性樹脂之環氧樹脂之硬化劑的二醯肼化合物，可列舉：己二酸二醯肼、十二烷酸二醯肼、間苯二甲酸二醯肼、對羥基苯甲酸二醯肼等羧酸二醯肼等。
作為環氧樹脂之硬化劑之酸酐可列舉：鄰苯二甲酸酐、四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、4-甲基六氫鄰苯二甲酸酐、內亞甲基四氫鄰苯二甲酸酐、十二烯基琥珀酸酐、順丁烯二酸酐等。
作為(A)熱硬化性樹脂之環氧樹脂之硬化劑的酚樹脂係1分子內具有2個以上酚性羥基之化合物。於1分子內具有1個酚性羥基之化合物時，無法獲得交聯結構，故而硬化物特性惡化而無法使用。另外，作為(A)熱硬化性樹脂之環氧樹脂之硬化劑的酚樹脂只要1分子內具有2個以上酚性羥基即可，較佳為1分子內具有2個以上5個以下之酚性羥基，更佳為1分子內具有2個或3個酚性羥基。多於該數時，分子量變得過大，故而樹脂糊之黏度變得過高因而不佳。作為此種化合物，可列舉：雙酚F、雙酚A、雙酚S、四甲基雙酚A、四甲基雙酚F、四甲基雙酚S、二羥基二苯醚、二羥基二苯基酮、四甲基聯苯酚、亞乙基雙 酚、甲基亞乙基雙(甲基苯酚)、亞環己基雙酚、聯苯酚等雙酚類及其衍生物；三(羥基苯基)甲烷、三(羥基苯基)乙烷等三官能之酚類及其衍生物；苯酚酚醛清漆、甲酚酚醛清漆等藉由使酚類與甲醛反應而獲得的以2核體或3核體為主之化合物及其衍生物等。
作為(A)熱硬化性樹脂之環氧樹脂之硬化促進劑，可列舉咪唑類、三苯基膦或四苯基鏻之鹽類、二氮雜雙環十一烯等胺系化合物及其鹽類等，可較佳地使用2-甲基咪唑、2-乙基咪唑-2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-C11H23-咪唑、2-甲基咪唑與2,4-二胺基-6-乙烯基三嗪之加成物等咪唑化合物。其中，特佳者為熔點180℃以上之咪唑化合物。另外，將環氧樹脂與氰酸酯樹脂、1分子內具有2個以上自由基聚合性之碳-碳雙鍵之樹脂併用亦較佳。
(A)熱硬化性樹脂之所謂1分子內具有2個以上自由基聚合性之碳-碳雙鍵之樹脂，係分子內具有碳-碳雙鍵之化合物，且係藉由碳-碳雙鍵進行反應而形成立體網狀結構並硬化之樹脂。
(A)熱硬化性樹脂之1分子內具有2個以上自由基聚合性之碳-碳雙鍵之樹脂中，(A)之分子量較佳為500以上50,000以下。其原因在於，小於上述範圍時，接著層之彈性模數變得過高，大於上述範圍時，樹脂糊之黏度變得過高。
以下例示較佳的1分子內具有2個以上自由基聚合性之碳-碳雙鍵之樹脂，但並不限定於該等。
作為1分子內具有2個以上丙烯醯基之化合物，較佳 者為於分子量500以上50,000以下之聚醚、聚酯、聚碳酸酯、聚(甲基)丙烯酸酯、聚丁二烯、丁二烯-丙烯腈共聚物中，1分子內具有2個以上丙烯醯基之化合物。
作為聚醚，較佳為碳數3~6之有機基經由醚鍵而重複者，且較佳為不含芳香族環者。其原因在於包含芳香族環時，作為1分子內具有2個以上丙烯醯基之化合物變為固形或高黏度，且形成硬化物時之彈性模數變得過高。另外，1分子內具有2個以上丙烯醯基之化合物之分子量如上所述般較佳為500以上、50,000以下，更佳為500以上、5,000以下，特佳為500以上、2,000以下。其原因在於，只要在上述範圍內，則可獲得作業性良好，且彈性模數較低之接著層。此種1分子內具有2個以上丙烯醯基之聚醚化合物可藉由聚醚多元醇與(甲基)丙烯酸及其衍生物之反應而獲得。
作為聚酯，較佳為碳數3~6之有機基經由酯鍵而重複者，且較佳為不含芳香族環者。其原因在於包含芳香族環時，作為1分子內具有2個以上丙烯醯基之化合物變為固形或高黏度，且形成硬化物時之彈性模數變得過高。另外，1分子內具有2個以上丙烯醯基之化合物之分子量如上所述般較佳為500以上、50,000以下，更佳為500以上、5,000以下，特佳為500以上、2,000以下。其原因在於，只要在上述範圍內，則可獲得作業性良好，且彈性模數較低之接著層。此種1分子內具有2個以上丙烯醯基之聚酯化合物可藉由聚酯多元醇與(甲基)丙烯酸及其衍生物之反應而獲得。
作為聚碳酸酯，較佳為碳數3~6之有機基經由碳酸酯 鍵而重複者，且較佳為不含芳香族環者。其原因在於包含芳香族環時，作為1分子內具有2個以上丙烯醯基之化合物變為固形或高黏度，且形成硬化物時之彈性模數變得過高。另外，1分子內具有2個以上丙烯醯基之化合物之分子量如上所述般較佳為500以上、50,000以下，更佳為500以上、5,000以下，特佳為500以上、2,000以下。其原因在於，只要在該範圍內，則可獲得作業性良好，且彈性模數較低之接著層。此種1分子內具有2個以上丙烯醯基之聚碳酸酯化合物可藉由聚碳酸酯多元醇與(甲基)丙烯酸及其衍生物之反應而獲得。
作為聚(甲基)丙烯酸酯，較佳為(甲基)丙烯酸與(甲基)丙烯酸酯的共聚物、或具有羥基之(甲基)丙烯酸酯與不具有極性基之(甲基)丙烯酸酯的共聚物、具有縮水甘油基之(甲基)丙烯酸酯與不具有極性基之(甲基)丙烯酸酯的共聚物等。另外，1分子內具有2個以上丙烯醯基之化合物之分子量如上所述般較佳為500以上50,000以下，更佳為500以上25,000以下。其原因在於，只要在該範圍內，則可獲得作業性良好、彈性模數較低之接著層。關於此種1分子內具有2個以上丙烯醯基之(甲基)丙烯酸酯化合物，於具有羧基之共聚物時，可藉由與具有羥基之(甲基)丙烯酸酯或者具有縮水甘油基之(甲基)丙烯酸酯反應而獲得，於具有羥基之共聚物時，可藉由與(甲基)丙烯酸及其衍生物反應而獲得，於具有縮水甘油基之共聚物時，可藉由與(甲基)丙烯酸及其衍生物反應而獲得。
作為聚丁二烯，可藉由具有羧基之聚丁二烯與具有羥基之(甲基)丙烯酸酯或具有縮水甘油基之(甲基)丙烯酸酯之 反應，具有羥基之聚丁二烯與(甲基)丙烯酸及其衍生物之反應而獲得，另外，亦可藉由經加成順丁烯二酸酐之聚丁二烯與具有羥基之(甲基)丙烯酸酯之反應而獲得。
作為丁二烯-丙烯腈共聚物，可藉由具有羧基之丁二烯-丙烯腈共聚物與具有羥基之(甲基)丙烯酸酯或具有縮水甘油基之(甲基)丙烯酸酯之反應而獲得。
作為1分子內具有2個以上烯丙基之化合物，較佳者為於分子量500以上50,000以下之聚醚、聚酯、聚碳酸酯、聚丙烯酸酯、聚甲基丙烯酸酯、聚丁二烯、丁二烯-丙烯腈共聚物中具有烯丙基之化合物，例如藉由使草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、順丁烯二酸、反丁烯二酸、鄰苯二甲酸、四氫鄰苯二甲酸、六氫鄰苯二甲酸及該等之衍生物等二羧酸及其衍生物與烯丙醇反應而獲得的二烯丙酯化合物與乙二醇、丙二醇、丁二醇等二醇之反應物等。
作為1分子內具有2個以上順丁烯二醯亞胺基之化合物，較佳者例如可列舉：N,N'-(4,4'-二苯基甲烷)雙順丁烯二醯亞胺、雙(3-乙基-5-甲基-4-順丁烯二醯亞胺苯基)甲烷、2,2-雙[4-(4-順丁烯二醯亞胺苯氧基)苯基]丙烷等雙順丁烯二醯亞胺化合物。更佳者為藉由二聚酸二胺與順丁烯二酸酐之反應所得的化合物，藉由順丁烯二醯亞胺基乙酸、順丁烯二醯亞胺基己酸等順丁烯二醯亞胺化胺基酸與多元醇之反應所獲得的化合物。順丁烯二醯亞胺化胺基酸係藉由使順丁烯二酸酐與胺基乙酸或胺基己酸進行反應而獲得，作為多元醇，較佳為聚醚多元醇、聚酯多元醇、聚碳酸酯多元醇、聚丙烯酸酯多元醇、聚甲基丙烯酸酯多元醇，特 佳為不含芳香族環者。其原因在於包含芳香族環時，作為1分子內具有2個以上順丁烯二醯亞胺基之化合物變為固形或高黏度，且形成硬化物時之彈性模數變得過高。
另外，為調整本實施形態中之樹脂糊之諸特性，亦可於不損及(A)熱硬化性樹脂之效果之範圍內使用以下之化合物。例如，可列舉：(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-3-羥基丙酯、(甲基)丙烯酸-2-羥基丁酯、(甲基)丙烯酸-3-羥基丁酯、(甲基)丙烯酸-4-羥基丁酯、丙三醇單(甲基)丙烯酸酯、丙三醇二(甲基)丙烯酸酯、三羥甲基丙烷單(甲基)丙烯酸酯、三羥甲基丙烷二(甲基)丙烯酸酯、季戊四醇單(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、新戊二醇單(甲基)丙烯酸酯等具有羥基之(甲基)丙烯酸酯或使該等具有羥基之(甲基)丙烯酸酯與二羧酸或其衍生物反應而獲得的具有羧基之(甲基)丙烯酸酯等。作為此處可使用之二羧酸，例如可列舉：草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、順丁烯二酸、反丁烯二酸、鄰苯二甲酸、四氫鄰苯二甲酸、六氫鄰苯二甲酸以及該等之衍生物。
除上述以外，亦可使用：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸-2-乙基己酯、其他(甲基)丙烯酸烷基酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸苯氧基乙酯、(甲基)丙烯酸縮水甘油酯、三羥甲基丙烷三(甲基)丙烯酸酯、單(甲基)丙烯酸鋅、二(甲基)丙烯酸 鋅、(甲基)丙烯酸二甲基胺基乙酯、(甲基)丙烯酸二乙基胺基乙酯、新戊二醇(甲基)丙烯酸酯、(甲基)丙烯酸三氟乙酯、(甲基)丙烯酸-2,2,3,3-四氟丙酯、(甲基)丙烯酸-2,2,3,3,4,4-六氟丁酯、(甲基)丙烯酸全氟辛酯、(甲基)丙烯酸全氟辛基乙酯、乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,10-癸二醇二(甲基)丙烯酸酯、丁二醇二(甲基)丙烯酸酯、(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸丁氧基乙酯、乙氧基二乙二醇(甲基)丙烯酸酯、N,N'-亞甲基雙(甲基)丙烯醯胺、N,N'-伸乙基雙(甲基)丙烯醯胺、1,2-二(甲基)丙烯醯胺乙二醇、二(甲基)丙烯醯氧基甲基三環癸烷、N-(甲基)丙烯醯氧基乙基順丁烯二醯亞胺、N-(甲基)丙烯醯氧基乙基六氫鄰苯二甲醯亞胺、N-(甲基)丙烯醯氧基乙基鄰苯二甲醯亞胺、N-乙烯基-2-吡咯啶酮、苯乙烯衍生物、α-甲基苯乙烯衍生物等。
進而，作為(A)熱硬化性樹脂之1分子內具有2個以上自由基聚合性之碳-碳雙鍵之樹脂的聚合起始劑，較佳為使用熱自由基聚合起始劑。只要是通常用作熱自由基聚合起始劑者則無特別限定，作為較理想者，較佳為在快速加熱試驗(將試樣1 g置於電熱板上，以4℃/min進行升溫時之分解起始溫度)中之分解溫度為40℃以上140℃以下者。若分解溫度未達40℃，則樹脂糊於常溫下之保存性變差，若超過140℃，則硬化時間變得極長，因而不佳。
作為滿足上述條件之熱自由基聚合起始劑之具體例，可列舉：過氧化丁酮、過氧化甲基環己酮、過氧化乙醯乙 酸甲酯、過氧化乙醯丙酮、1,1-雙(第三丁基過氧基)-3,3,5-三甲基環己烷、1,1-雙(第三己基過氧基)環己烷、1,1-雙(第三己基過氧基)-3,3,5-三甲基環己烷、1,1-雙(第三丁基過氧基)環己烷、2,2-雙(4,4-二-第三丁基過氧化環己基)丙烷、1,1-雙(第三丁基過氧基)環十二烷、4,4-雙(第三丁基過氧基)戊酸正丁酯、2,2-雙(第三丁基過氧基)丁烷、1,1-雙(第三丁基過氧基)-2-甲基環己烷、第三丁基過氧化氫、過氧化氫對薄荷烷、1,1,3,3-四甲基丁基過氧化氫、第三己基過氧化氫、過氧化二異丙苯、2,5-二甲基-2,5-雙(第三丁基過氧基)己烷、α,α'-雙(第三丁基過氧基)二異丙基苯、過氧化第三丁基異丙苯、過氧化二-第三丁基、2,5-二甲基-2,5-雙(第三丁基過氧基)-3-己炔、過氧化異丁醯基、過氧化3,5,5-三甲基己醯、過氧化辛醯基、過氧化月桂醯基、過氧化肉桂酸、過氧化間甲苯甲醯(m-toluoyl peroxide)、過氧化苯甲醯、過氧化二碳酸二異丙酯、過氧化二碳酸雙(4-第三丁基環己基)酯、過氧化二碳酸-二-3-甲氧基丁酯、過氧化二碳酸-二-2-乙基己酯、過氧化二碳酸-二-第二丁酯、過氧化二碳酸-二(3-甲基-3-甲氧基丁基)酯、過氧化二碳酸-二(4-第三丁基環己基)酯、α,α'-雙(新癸醯基過氧基)二異丙基苯、過氧化新癸酸異丙苯酯、過氧化新癸酸-1,1,3,3,-四甲基丁酯、過氧化新癸酸-1-環己基-1-甲基乙酯、過氧化新癸酸第三己酯、過氧化新癸酸第三丁酯、過氧化三甲基乙酸第三己酯、過氧化三甲基乙酸第三丁酯、2,5-二甲基-2,5-雙(2-乙基己醯基過氧基)己烷、過氧化2-乙基己酸-1,1,3,3-四甲基丁酯、過氧化2-乙基己酸-1-環己基-1-甲基乙酯、過氧化2-乙基己酸第三己酯、過氧化2-乙基己酸第三丁酯、過氧化異丁酸第三丁酯、 過氧化順丁烯二酸第三丁酯、過氧化月桂酸第三丁酯、過氧化3,5,5-三甲基己酸第三丁酯、過氧化異丙基單碳酸第三丁酯、過氧化2-乙基己基單碳酸第三丁酯、2,5-二甲基-2,5-雙(苯甲醯基過氧基)己烷、過氧化乙酸第三丁酯、過氧化苯甲酸第三己酯、過氧化間甲苯甲醯基苯甲酸第三丁酯、過氧化苯甲酸第三丁酯、間苯二甲酸雙(第三丁基過氧基)酯、過氧化烯丙基單碳酸第三丁酯、3,3',4,4'-四(第三丁基過氧化羰基)二苯基酮等，該等可單獨使用，或者為控制硬化性，亦可將2種以上混合使用。另外，將上述之1分子內具有2個以上自由基聚合性之碳-碳雙鍵之樹脂與氰酸酯樹脂、環氧樹脂併用亦較佳。
關於(A)熱硬化性樹脂之調配量，相對於全部樹脂糊100體積%為50體積%以上80體積%以下，較佳為55體積%以上75體積%以下，更佳為60體積%以上70體積%以下。藉由設於該範圍內，樹脂糊之作業性或耐熱性等更優異。
(金屬粒子)
作為(B)金屬粒子，只要形狀為鱗片形狀或橢圓球形狀則無特別限定，較佳可列舉銀粒子，因其導電性及導熱性優異。另外，除銀以外，例如亦可使用銅、金、鎳、鈀、鋁、錫、鋅等之金屬粒子，或該等金屬之合金粒子等中的至少1種以上。
於此，銀粒子包括將銅、金、鎳、鈀、鋁、錫、鋅等之金屬粒子之表面以銀被覆所得的金屬粒子。
(B)金屬粒子之形狀為鱗片形狀或橢圓球形狀。再者，橢圓球形狀之含義包括圓球形狀。另外，若金屬粒子 之形狀為鱗片形狀或橢圓球形狀，則如上所述般，可藉由絕緣粒子而使金屬粒子之長軸相對於重力方向平行地排列。另外，於無絕緣粒子之部分，可使金屬粒子相對於重力方向垂直地排列。
另外，(B)金屬粒子之縱橫比並無特別限定，較佳為1.0以上40.0以下，更佳為2.0以上40.0以下，更佳為4.0以上30.0以下。若縱橫比為上述下限以上，則對於(B)金屬粒子，(B)金屬粒子之長軸可相對於重力方向更平行地排列。
另外，若縱橫比超過上述上限，則形成樹脂糊時有可能安裝時之作業性變差，故而不佳。
於此，(B)金屬粒子之縱橫比=(B)金屬粒子之平均長徑/(B)金屬粒子之平均厚度。
所謂(B)金屬粒子之平均長徑，係藉由流場式顆粒影像分析裝置(flow particle image analyzer)所得之個數基準粒度分布中1000個以上(B)金屬粒子之平均長徑，所謂(B)金屬粒子之平均厚度，係於7 mm×7 mm之矽晶片上塗布適當量之樹脂糊，於其上以樹脂糊層成為約20 μm之方式安裝5 mm×5 mm之矽晶片後，於175℃下進行60分鐘硬化，藉由研磨使樹脂糊層之剖面露出，利用SEM(scanning electron microscope，掃描式電子顯微鏡)測定50個(B)金屬粒子之厚度，取平均厚度。
另外，(B)金屬粒子之粒徑根據所需之樹脂糊之黏度而不同，通常，金屬粒子藉由雷射繞射散射式粒度分布測定法所得之個數基準粒度分布中的中位粒徑d50較佳為0.3 μm以上20 μm以下。中位粒徑d50未達0.3 μm時，黏度增 高，若中位粒徑d50超過20 μm，則塗布或硬化時樹脂成分容易流出而產生溢出(bleed)，故而不佳。另外，若中位粒徑d50超過20 μm，則利用點膠機(dispenser)塗布樹脂糊時，存在堵塞針之出口而無法長時間地連續使用的情形。
另外，所使用之(B)金屬粒子中，鹵離子、鹼金屬離子等離子性雜質之含量較佳為10 ppm以下。再者，本實施形態中所用之(B)金屬粒子亦可使用預先將表面以烷氧基矽烷、醯氧基矽烷、矽氮烷、有機胺基矽烷等矽烷偶合劑等加以處理者。
另外，關於(B)金屬粒子之調配量，相對於全部樹脂糊100體積%，較佳為0.6體積%以上35體積%以下，藉由設於該範圍內，可獲得良好之導熱性及導電性，且作業性亦優異。樹脂糊中之(B)金屬粒子未達0.6體積%時，(B)金屬粒子由(A)熱硬化性樹脂覆蓋，有可能無法形成(B)金屬粒子與重力方向平行之排列，若超過35體積%，則樹脂糊之黏度提高而作業性下降，或者樹脂糊之硬化物變脆，因此有可能耐焊錫性降低，故而不佳。
(絕緣粒子)
(C)絕緣粒子並無特別限定，只要是可對(B)金屬粒子之排列產生影響之絕緣粒子，則任意者均可無任何問題地加以利用。例如，可列舉二氧化矽粒子或氧化鋁等無機填料、有機聚合物等有機填料。
(C)絕緣粒子較佳為可使所含之(B)金屬粒子排列者，另外，於半導體用途時，更佳為粒徑一致者。另外，(C)絕緣粒子若為用於對本實施形態中之接著層1賦予低熱膨脹性、低吸濕率等，且於硬化後將接著層1之厚度保持為 固定者，則更佳。
另外，(C)絕緣粒子之粒徑根據所需之樹脂糊之黏度而不同，通常，(C)絕緣粒子藉由雷射繞射散射式粒度分布測定法所得之個數基準粒度分布中的中位粒徑d50較佳為2 μm以上10 μm以下，更佳為3 μm以上8 μm以下，特佳為3 μm以上6 μm以下。於中位粒徑d50未達2 μm時，黏度增高因而不佳。另外，若中位粒徑d50為2 μm以上，則可更高效率地使(B)金屬粒子以長軸相對於重力方向平行之方式排列。
另外，若中位粒徑d50超過10 μm，則塗布或硬化時樹脂成分容易流出而產生溢出，故而不佳。另外，若中位粒徑d50為10 μm以下，則可更高效率地使(B)金屬粒子以長軸相對於重力方向平行之方式排列。
另外，將藉由流場式顆粒影像分析裝置所得之個數基準粒度分布中(B)金屬粒子之平均長徑設為D時，較佳為(B)金屬粒子之平均長徑D與(C)絕緣粒子之中位粒徑d50滿足D×0.1<d50<D×2之關係。若滿足上述關係，則(C)絕緣粒子可對(B)金屬粒子之排列產生更有效果的影響。
另外，(C)絕緣粒子之調配量較佳為相對於全部樹脂糊100體積%為6體積%以上48.5體積%以下，藉由設於該範圍內，可獲得良好之導熱性及導電性，且作業性亦優異。於樹脂糊中之(C)絕緣粒子未達6體積%時，有可能無法使(B)金屬粒子形成與重力方向平行之排列，若超過48.5體積%，則樹脂糊之黏度提高而作業性下降，或者樹脂糊之硬化物變脆，因此有可能耐焊錫性降低，故而不佳。
作為無機填料，具體而言可列舉：氮化鋁、氮化硼、 氧化鈦、碳化矽、碳酸鈣、二氧化矽、氧化鋁等。無機填料較佳為可使(B)金屬粒子排列者，另外，於半導體用途時，更佳為粒徑一致者。另外，無機填料若為用於對接著層1賦予低熱膨脹性、低吸濕率等，且將接著層1之厚度保持為固定者，則更佳。其中，特佳為二氧化矽或氧化鋁。
作為有機填料，具體而言可列舉：苯乙烯系、苯乙烯/異戊二烯系、苯乙烯/丙烯酸系、甲基丙烯酸甲酯系、丙烯酸乙酯系、丙烯酸系、甲基丙烯酸乙酯系、丙烯腈系、甲基丙烯酸酯系、二乙烯基苯系、丙烯酸正丁酯系、尼龍系、聚矽氧系、胺基甲酸酯系、三聚氰胺系、纖維素、乙酸纖維素、幾丁聚糖(chitosan)、丙烯酸系橡膠/甲基丙烯酸酯系、乙烯系、乙烯/丙烯酸系、聚丙烯或苯胍嗪(benzoguanamine)系、酚系、氟系、聚偏二氟乙烯等聚合物等。有機填料較佳為可使(B)金屬粒子排列者，另外，於用做為半導體用途時，更佳為粒徑一致者。另外，有機填料若為用於對接著層1賦予低熱膨脹性、低吸濕率等，且將接著層1之厚度保持為固定者，則更佳。其中，特佳為以聚甲基丙烯酸甲酯作為主成分之交聯有機聚合物。
本實施形態中之樹脂糊中，較佳為進而含有環氧矽烷、巰基矽烷、胺基矽烷、烷基矽烷、脲基矽烷、乙烯基矽烷等矽烷偶合劑，或鈦酸酯偶合劑、鋁偶合劑、鋁/鋯偶合劑等偶合劑。
本實施形態中之樹脂糊中，亦可視需要使用其他添加劑。作為其他添加劑，可列舉碳黑等著色劑，聚矽氧油、聚矽氧橡膠等低應力化成分，水滑石等無機離子交換體，消泡劑、界面活性劑、各種聚合抑制劑、抗氧化劑等，可 適宜調配該等各種添加劑。
另外，本實施形態中之樹脂糊中，亦可於不對形成硬化物時(B)金屬粒子之排列造成影響之範圍內，視需要添加有機化合物。作為示例，可列舉：己烷、2-甲基戊烷、2,2-二甲基丁烷、2,3-二甲基丁烷、庚烷、辛烷、2,2,3-三甲基戊烷、異辛烷、壬烷、2,2,5-三甲基己烷、癸烷、1-己烯、1-庚烯、1-辛烯、1-壬烯、1-癸烯、乙基苯、異丙苯、1,3,5-三甲苯、丁基苯、對異丙甲苯、二乙基苯、甲基環戊烷、環己烷、甲基環己烷、乙基環己烷、對薄荷烷、環己烯、α-蒎烯、二戊烯、十氫萘、甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、異丁醇、第三丁醇、1-戊醇、2-戊醇、3-戊醇、2-甲基-1-丁醇、異戊醇、第三戊醇、3-甲基-2-丁醇、新戊醇、1-己醇、2-甲基-1-戊醇、4-甲基-2-戊醇、2-乙基-1-丁醇、1-庚醇、2-庚醇、3-庚醇、1-辛醇、2-辛醇、2-乙基-1-己醇、3,5,5-三甲基-1-己醇、環己醇、1-甲基環己醇、2-甲基環己醇、3-甲基環己醇、4-甲基環己醇、松脂醇(Abietinol)、1,2-乙二醇、1,2-丙二醇、1,2-丁二醇、2-甲基-2,4-戊二醇、二丙醚、二異丙醚、二丁醚、苯甲醚、苯乙醚、甲氧基甲苯、苄基乙醚、2-甲基呋喃、四氫呋喃、四氫吡喃、1,2-二甲氧基乙烷、1,2-二乙氧基乙烷、二乙二醇二甲醚、二乙二醇二乙醚、縮醛、丙酮、甲基乙基酮、2-戊酮、3-戊酮、2-己酮、甲基異丁基酮、2-庚酮、4-庚酮、二異丁基酮、丙酮基丙酮、異亞丙基酮、佛耳酮、環己酮、甲基環己酮、丙酸、丁酸、異丁酸、三甲基乙酸、戊酸、異戊酸、2-乙基丁酸、丙酸酐、丁酸酐、甲酸乙酯、甲酸丙酯、甲酸丁酯、甲酸異丁酯、甲酸戊酯、乙酸甲酯、乙酸 乙酯、乙酸丙酯、乙酸異丙酯、乙酸丁酯、乙酸異丁酯、乙酸第二丁酯、乙酸戊酯、乙酸異戊酯、乙酸-3-甲氧基丁酯、乙酸第二己酯、乙酸-2-乙基丁酯、乙酸2-乙基己酯、乙酸環己酯、丙酸甲酯、丙酸乙酯、丙酸丁酯、丙酸異戊酯、丁酸甲酯、丁酸乙酯、丁酸丁酯、丁酸異戊酯、異丁酸異丁酯、2-羥基-2-甲基丙酸乙酯、異戊酸乙酯、異戊酸異戊酯、苯甲酸甲酯、草酸二乙酯、丙二酸二乙酯、乙二醇單乙酸酯、乙二醇二乙酸酯、單乙酸甘油酯、碳酸二乙酯、硝基甲烷、硝基乙烷、1-硝基丙烷、2-硝基丙烷、乙腈、丙腈、丁腈、異丁腈、戊腈、苄腈、二乙胺、三乙胺、二丙胺、二異丙胺、二丁胺、二異丁胺、苯胺、N-甲基苯胺、N,N-二甲基苯胺、吡咯、哌啶、吡啶、α-甲基吡啶、β-甲基吡啶、γ-甲基吡啶、2,4-二甲吡啶、2,6-二甲吡啶、N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N,N-二甲基乙醯胺、二甲基亞碸、2-甲氧基甲醇、2-乙氧基甲醇、2-(甲氧基甲氧基)乙醇、2-異丙氧基乙醇、2-丁氧基乙醇、2-(新戊氧基)乙醇、呋喃甲醇、四氫呋喃甲醇、二乙二醇單甲醚、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇、二丙二醇單甲醚、二丙二醇單乙醚、二丙酮醇、2-(二甲基胺基)乙醇、2-(二乙基胺基)乙醇、嗎啉、N-乙基嗎啉、乳酸甲酯、乳酸乙酯、乳酸丁酯、乳酸戊酯、乙酸-2-甲氧基乙酯、乙酸-2-乙氧基乙酯、乙酸-2-丁氧基乙酯、乙醯乙酸甲酯、乙醯乙酸乙酯等。該等可無特別限定地加以利用，亦可將2種以上併用。
本實施形態中之樹脂糊例如可藉由將各成分預混合後，使用三輥研磨機進行混練，然後於真空下消泡而製造。
(半導體裝置)
使用本實施形態中之樹脂糊製作半導體裝置10之方法可利用公知之方法。例如，使用市售之黏晶機(die bonder)，將樹脂糊點膠塗布於基材2之特定部位後，安裝半導體元件3，加熱硬化而形成接著層1。然後，進行打線接合(wire bonding)，使用環氧樹脂形成密封材料層5，藉此製作半導體裝置10。
[實施例]
以下，關於本實施形態具體地示出實施例，但並不限定於該等實施例。於本實施例中，樹脂糊之各成分使用以下者。
作為(A)熱硬化性樹脂，使用雙酚F型環氧樹脂(日本化藥公司製造，RE-403S)、及二烯丙酯樹脂(昭和電工公司製造，DA-101)。
作為硬化劑，使用二氰二胺(ADEKA公司製造，Hardener EH-3636AS)。
作為硬化促進劑，使用2-苯基-4-甲基-5-羥基甲基咪唑(四國化成工業公司製造，Curezol 2P4MHZ)。
作為聚合起始劑，使用1,1-二(第三丁基過氧基)環己烷(日本油脂公司製造，PerhexaC(S))。
作為環氧樹脂系稀釋劑，使用第三丁基苯基縮水甘油醚(日本化藥公司製造，TGE-H)。
作為丙烯酸樹脂系稀釋劑，使用乙二醇二甲基丙烯酸酯(共榮社化學公司製造，Light Ester EG)。
作為偶合劑，使用雙(三甲氧基矽烷基丙基)四硫醚(Cabrus公司製造，Cabrus 4)。
作為(B)金屬粒子，使用銀粒子1(福田金屬箔粉工 業公司製造，AgC-GS，中位粒徑d50：8.0 μm，縱橫比4.1，平均長徑4.6 μm)。
作為(B)金屬粒子，使用銀粒子2(德力化學研究所公司製造，TC-101，中位粒徑d50：8.0 μm，縱橫比16.4，平均長徑4.6 μm)。
作為(C)絕緣粒子，使用二氧化矽粒子A(MRC Unitec 公司製造，QS-4F2，中位粒徑d50：4.2 μm)、二氧化矽粒子B(Admatechs公司製造，SO-E2-24C，中位粒徑d50：0.6 μm)、二氧化矽粒子C(日本Aerosil公司製造，R-805，中位粒徑d50：0.05 μm)、氧化鋁粒子(Micron公司製造，DAW-10，中位粒徑d50：10 μm)、有機聚合物(日本觸媒公司製造，MA-1004，中位粒徑d50：5 μm)。
[實施例1~11、比較例1~4]
以表1之比例調配上述成分，使用三輥研磨機進行混練，於真空室內、2 mmHg下進行15分鐘消泡，藉此分別製作樹脂糊。調配比例為重量份。
(評價試驗)
對由上述而獲得之樹脂糊分別進行以下之評價試驗。評價結果示於表1。
(黏度)
於上述之樹脂糊製作後，立即使用E型黏度計(3°圓錐)測定25℃、2.5 rpm下的數值。將剛製作後之黏度在10 Pa．s以上50 Pa．s以下之範圍內的情形評價為○，在上述範圍外之情形評價為×。
(體積電阻率)
將藉由上述所獲得之樹脂糊夾持於鍍Ag之銅框架與 銅框架之間以可測定連接電阻，於175℃之烘箱中硬化60分鐘。硬化後，使用電阻率測定裝置，測定夾入有樹脂糊之樣品之電阻值，由連接距離及連接面積算出垂直(厚度)方向之體積電阻率。將垂直(厚度)方向之體積電阻率為1.0×10-1 Ω．cm以下者評價為○，超過1.0×10-1 Ω．cm者評價為×。
(接著層中之各成分之體積含有率)
利用下述式(1)及式(2)，分別算出用金屬粒子及絕緣粒子在接著層中所佔之體積分別除以接著層整體之體積所得的值即體積含有率a及b。
體積含有率a=(金屬粒子所佔之體積)/[(金屬粒子所佔之體積)+(絕緣粒子所佔之體積)+(樹脂成分所佔之體積)] (1)
體積含有率b=(絕緣粒子所佔之體積)/[(金屬粒子所佔之體積)+(絕緣粒子所佔之體積)+(樹脂成分所佔之體積)] (2)
於此，所謂樹脂成分，表示接著層中金屬粒子及絕緣粒子以外之成分。
另外，樹脂成分所佔之體積係由金屬粒子及絕緣粒子以外之重量及比重而算出。具體而言，關於樹脂成分之比重，係使用不含填料成分之樹脂糊製作接著層，用浮力式密度比重計測定該接著層之比重，作為樹脂成分之比重而使用。另外，金屬粒子所佔之體積及絕緣粒子所佔之體積亦同樣係由重量及比重而算出。金屬粒子及絕緣粒子之真比重係參考公知文獻。
由表1可知，實施例1~11中之樹脂糊之黏度在大致合適之範圍內，作業性優異。另外，使用實施例1~11中之樹脂糊而形成的接著層之體積電阻率低，導電性優異。
[產業上之可利用性]
根據本發明，可提供一種導電性良好之半導體裝置，因此本發明於產業上極為有用。
1‧‧‧接著層
2‧‧‧基材
3‧‧‧半導體元件
4‧‧‧引線
5‧‧‧密封材料層
6‧‧‧接合線
7‧‧‧焊墊
10‧‧‧半導體裝置
圖1係表示本實施形態之半導體裝置之構成的剖面圖。
1‧‧‧接著層
2‧‧‧基材
3‧‧‧半導體元件
4‧‧‧引線
5‧‧‧密封材料層
6‧‧‧接合線
7‧‧‧焊墊
10‧‧‧半導體裝置

Claims (7)

  1. 一種半導體裝置，其具備：基材、半導體元件、及存在於上述基材與上述半導體元件之間以接著兩者之接著層；上述接著層中分散有金屬粒子及絕緣粒子，上述金屬粒子包含鱗片形狀或橢圓球形狀，且當將上述接著層中之上述金屬粒子之體積含有率設為a，上述接著層中之上述絕緣粒子之體積含有率設為b時，上述接著層中之填料之體積含有率(a+b)為0.20以上0.50以下，上述填料中之上述金屬粒子之體積含有率a/(a+b)為0.03以上0.70以下；上述絕緣粒子藉由雷射繞射散射式粒度分布測定法所得之個數基準粒度分布中的中位粒徑d50為2μm以上10μm以下。
  2. 如申請專利範圍第1項之半導體裝置，其中將藉由流場式顆粒影像分析裝置所得之個數基準粒度分布中上述金屬粒子之平均長徑設為D時，D×0.1<d50<D×2。
  3. 如申請專利範圍第1或2項之半導體裝置，其中上述絕緣粒子包含選自二氧化矽粒子、氧化鋁、有機聚合物中之一種以上。
  4. 如申請專利範圍第1或2項之半導體裝置，其中上述金屬粒子包含銀粒子。
  5. 如申請專利範圍第4項之半導體裝置，其中上述銀粒子包 含由銀被覆之金屬粒子。
  6. 如申請專利範圍第1或2項之半導體裝置，其中上述基材為引線框架或BGA基板。
  7. 如申請專利範圍第1或2項之半導體裝置，其中上述半導體元件為消耗電力1.7W以上之功率元件。
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CN103608907B (zh) 2017-03-29
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TW201250711A (en) 2012-12-16
WO2012165416A1 (ja) 2012-12-06
US20140183715A1 (en) 2014-07-03
JP6269058B2 (ja) 2018-01-31
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